Page 157 - Produits Toshiba Semiconductor and Storage

Référence	Fabricant	Description	paquet	Stock
TK7P60W,RVQ	Toshiba Semiconductor and Storage	MOSFET N CH 600V 7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 300V Vgs (Max): ±30V FET Feature: Super Junction Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	paquet: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2 256 108
SSM6J511NU,LF	Toshiba Semiconductor and Storage	MOSFET P-CH 12V 14A UDFN6B FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 6V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 4A, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFNB (2x2) Package / Case: 6-WDFN Exposed Pad	paquet: 6-WDFN Exposed Pad	Stock3 056
2SA1020-Y,T6F(J	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	paquet: TO-226-3, TO-92-3 Long Body	Stock2 224
RN2309(TE85L,F)	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 0.1W USM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	paquet: SC-70, SOT-323	Stock4 736
2SC5087YTE85LF	Toshiba Semiconductor and Storage	TRANS RF NPN 7GHZ 80MA SMQ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 13dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-61AA Supplier Device Package: SMQ	paquet: SC-61AA	Stock6 112
CRZ33(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE ZENER 33V 700MW SFLAT Voltage - Zener (Nom) (Vz): 33V Tolerance: ±10% Power - Max: 700mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 10µA @ 26.4V Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5)	paquet: SOD-123F	Stock36 000
JDH2S02FSTPL3	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 10V 10MA FSC Diode Type: Schottky - Single Voltage - Peak Reverse (Max): 10V Current - Max: 10mA Capacitance @ Vr, F: 0.3pF @ 0.2V, 1MHz Resistance @ If, F: - Power Dissipation (Max): - Operating Temperature: 125°C (TJ) Package / Case: 2-SMD, Flat Lead Supplier Device Package: fSC	paquet: 2-SMD, Flat Lead	Stock222 312
CLH05(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 5A L-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 0.98V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 150°C	paquet: L-FLAT?	Stock7 312
CMS16(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 3A MFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C	paquet: SOD-128	Stock21 744
1SS361CT(TPL3)	Toshiba Semiconductor and Storage	DIODE ARRAY GP 80V 100MA CST3 Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.6ns Current - Reverse Leakage @ Vr: 500nA @ 80V Operating Temperature - Junction: 150°C (Max) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	paquet: SC-101, SOT-883	Stock7 104
TA7291FG(O,EL)	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 16HSOP Motor Type - Stepper: - Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (2) Interface: Parallel Technology: Bipolar Step Resolution: - Applications: General Purpose Current - Output: 400mA Voltage - Supply: 4.5 V ~ 20 V Voltage - Load: 0 V ~ 20 V Operating Temperature: -30°C ~ 75°C (TA) Mounting Type: Surface Mount Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs Supplier Device Package: 16-HSOP	paquet: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs	Stock10 440
TB62215AFG,8,EL	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 28HSOP Motor Type - Stepper: Bipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: Power MOSFET Step Resolution: 1, 1/2, 1/4 Applications: General Purpose Current - Output: 3A Voltage - Supply: 4.75 V ~ 5.25 V Voltage - Load: 10 V ~ 38 V Operating Temperature: -20°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 28-BSOP (0.346", 8.80mm) + 2 Heat Tabs Supplier Device Package: 28-HSOP	paquet: 28-BSOP (0.346", 8.80mm) + 2 Heat Tabs	Stock2 240
TC7SZ05F,LJ(CT	Toshiba Semiconductor and Storage	IC INVERTER OPEN-DRAIN 5-SSOP Logic Type: Inverter Number of Circuits: 1 Number of Inputs: 1 Features: Open Drain Voltage - Supply: 1.8 V ~ 5.5 V Current - Quiescent (Max): 2µA Current - Output High, Low: -, 32mA Logic Level - Low: - Logic Level - High: - Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: SMV Package / Case: SC-74A, SOT-753	paquet: SC-74A, SOT-753	Stock21 738
TC75S59F,LF	Toshiba Semiconductor and Storage	IC C0MP GP CMOS OPEN DRAIN SMV Type: General Purpose Number of Elements: 1 Output Type: Open Drain Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V Voltage - Input Offset (Max): 7mV @ 5V Current - Input Bias (Max): 1pA Current - Output (Typ): 25mA Current - Quiescent (Max): 220µA CMRR, PSRR (Typ): - Propagation Delay (Max): 200ns Hysteresis: - Operating Temperature: -40°C ~ 85°C Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Supplier Device Package: SMV	paquet: SC-74A, SOT-753	Stock5 024
TMPM333FDFG(C,J)	Toshiba Semiconductor and Storage	IC MCU 32BIT 512KB FLASH 100LQFP Core Processor: ARM? Cortex?-M3 Core Size: 32-Bit Speed: 40MHz Connectivity: I2C, SIO, UART/USART Peripherals: POR, WDT Number of I/O: 78 Program Memory Size: 512KB (512K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 32K x 8 Voltage - Supply (Vcc/Vdd): 2.7 V ~ 3.6 V Data Converters: A/D 12x10b Oscillator Type: External Operating Temperature: -20°C ~ 85°C (TA) Mounting Type: - Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x14)	paquet: 100-LQFP	Stock7 908
TL1L4-NT0,L4A5B	Toshiba Semiconductor and Storage	POWER LED WHT 5700K 3535 Color: White, Cool CCT (K): 5700K Flux @ 85°C, Current - Test: 150 lm (140 lm ~ 160 lm) Flux @ 25°C, Current - Test: - Current - Test: 350mA Voltage - Forward (Vf) (Typ): 2.8V Lumens/Watt @ Current - Test: 153 lm/W CRI (Color Rendering Index): 70 Current - Max: 1.5A Viewing Angle: 120° Mounting Type: Surface Mount Package / Case: 1414 (3535 Metric) Supplier Device Package: 3535 Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm) Height - Seated (Max): 0.085" (2.15mm)	paquet: 1414 (3535 Metric)	Stock5 490
TLP109(V4,E	Toshiba Semiconductor and Storage	OPTOISO 3.75KV TRANS 6-SO 5 LEAD Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 20% @ 16mA Current Transfer Ratio (Max): - Turn On / Turn Off Time (Typ): 800ns, 800ns (Max) Rise / Fall Time (Typ): - Input Type: DC Output Type: Transistor Voltage - Output (Max): 20V Current - Output / Channel: 8mA Voltage - Forward (Vf) (Typ): 1.64V Current - DC Forward (If) (Max): 20mA Vce Saturation (Max): - Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads Supplier Device Package: 6-SO, 5 Lead	paquet: 6-SOIC (0.179", 4.55mm Width) 5 Leads	Stock7 296
TLP116A(TPL,E	Toshiba Semiconductor and Storage	OPTOISO 3.75KV PUSH PULL SO6-5 Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 3750Vrms Common Mode Transient Immunity (Min): 10kV/µs Input Type: DC Output Type: Push-Pull, Totem Pole Current - Output / Channel: 10mA Data Rate: 20MBd Propagation Delay tpLH / tpHL (Max): 60ns, 60ns Rise / Fall Time (Typ): 15ns, 15ns Voltage - Forward (Vf) (Typ): 1.58V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads Supplier Device Package: 6-SO, 5 Lead	paquet: 6-SOIC (0.179", 4.55mm Width) 5 Leads	Stock36 000
7UL1G08FS,LF	Toshiba Semiconductor and Storage	L-MOS LVP SERIES SINGLE 2-INPUT Logic Type: AND Gate Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 0.9 V ~ 3.6 V Current - Quiescent (Max): 1µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.1 V ~ 0.4 V Logic Level - High: 0.75 V ~ 2.48 V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.6V, 30pF Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Supplier Device Package: fSV Package / Case: SOT-953	paquet: SOT-953	Stock84 420
TK090N65Z-S1F	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 30A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.27mA Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	paquet: -	Stock81
TCR2DG35-LF	Toshiba Semiconductor and Storage	LOW DROPOUT (LDO) IOUT: 200MA PD Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3.5V Voltage - Output (Max): - Voltage Dropout (Max): 0.11V @ 100mA Current - Output: 200mA Current - Quiescent (Iq): 70 µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-UFBGA, WLCSP Supplier Device Package: 4-WCSP (0.79x0.79)	paquet: -	Request a Quote
SSM6N17FU-TE85L-F	Toshiba Semiconductor and Storage	MOSFET 2N-CH 50V 0.1A US6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 3V Power - Max: 200mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	paquet: -	Stock8 982
TCR3UF28A-LM-CT	Toshiba Semiconductor and Storage	IC REG LINEAR 2.8V 300MA SMV Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 2.8V Voltage - Output (Max): - Voltage Dropout (Max): 0.342V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): 680 nA Current - Supply (Max): - PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	paquet: -	Stock16 308
TC7WH00FK-LJ-CT	Toshiba Semiconductor and Storage	IC GATE NAND 2CH 4-INP 8SSOP Logic Type: NAND Gate Number of Circuits: 2 Number of Inputs: 4 Features: - Voltage - Supply: 2V ~ 5.5V Current - Quiescent (Max): 2 µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: - Logic Level - High: - Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: 8-SSOP Package / Case: 8-VFSOP (0.091", 2.30mm Width)	paquet: -	Request a Quote
CUHS15F40-H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1.5A US2H Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 630 mV @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 40 V Capacitance @ Vr, F: 130pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max)	paquet: -	Stock45 045
74LCX02FT	Toshiba Semiconductor and Storage	IC GATE NOR 4CH 2-INP 14TSSOPB Logic Type: NOR Gate Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 1.65V ~ 3.6V Current - Quiescent (Max): 40 µA Current - Output High, Low: 24mA, 24mA Logic Level - Low: 0.7V ~ 0.8V Logic Level - High: 1.7V ~ 2V Max Propagation Delay @ V, Max CL: 6ns @ 3.3V, 50pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: 14-TSSOPB Package / Case: 14-TSSOP (0.173", 4.40mm Width)	paquet: -	Stock7 500
JDV2S41FS-TPL3	Toshiba Semiconductor and Storage	DIODE VAR 15V UHF FSC Capacitance @ Vr, F: 16pF @ 2V, 1MHz Capacitance Ratio: - Capacitance Ratio Condition: - Voltage - Peak Reverse (Max): 15 V Diode Type: Single Q @ Vr, F: - Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: fSC	paquet: -	Request a Quote
TC74VHC00FT-EL	Toshiba Semiconductor and Storage	IC GATE NAND 4CH 2-INP 14-TSSOP Logic Type: NAND Gate Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 2V ~ 5.5V Current - Quiescent (Max): 2 µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.5V Logic Level - High: 1.5V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-TSSOP Package / Case: 14-TSSOP (0.173", 4.40mm Width)	paquet: -	Request a Quote

TK7P60W,RVQ

Toshiba Semiconductor and Storage

MOSFET N CH 600V 7A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.7V @ 350µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 300V
Vgs (Max): ±30V
FET Feature: Super Junction
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2 256 108

SSM6J511NU,LF

Toshiba Semiconductor and Storage

MOSFET P-CH 12V 14A UDFN6B

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 6V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 4A, 8V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-UDFNB (2x2)
Package / Case: 6-WDFN Exposed Pad

paquet: 6-WDFN Exposed Pad

Stock3 056

2SA1020-Y,T6F(J

Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

paquet: TO-226-3, TO-92-3 Long Body

Stock2 224

RN2309(TE85L,F)

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W USM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

paquet: SC-70, SOT-323

Stock4 736

2SC5087YTE85LF

Toshiba Semiconductor and Storage

TRANS RF NPN 7GHZ 80MA SMQ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 13dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-61AA
Supplier Device Package: SMQ

paquet: SC-61AA

Stock6 112

CRZ33(TE85L,Q,M)

Toshiba Semiconductor and Storage

DIODE ZENER 33V 700MW SFLAT

Voltage - Zener (Nom) (Vz): 33V
Tolerance: ±10%
Power - Max: 700mW
Impedance (Max) (Zzt): 30 Ohms
Current - Reverse Leakage @ Vr: 10µA @ 26.4V
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)

paquet: SOD-123F

Stock36 000

JDH2S02FSTPL3

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 10V 10MA FSC

Diode Type: Schottky - Single
Voltage - Peak Reverse (Max): 10V
Current - Max: 10mA
Capacitance @ Vr, F: 0.3pF @ 0.2V, 1MHz
Resistance @ If, F: -
Power Dissipation (Max): -
Operating Temperature: 125°C (TJ)
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: fSC

paquet: 2-SMD, Flat Lead

Stock222 312

CLH05(TE16R,Q)

Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 5A L-FLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 5A (DC)
Voltage - Forward (Vf) (Max) @ If: 0.98V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: L-FLAT?
Supplier Device Package: L-FLAT? (4x5.5)
Operating Temperature - Junction: -40°C ~ 150°C

paquet: L-FLAT?

Stock7 312

CMS16(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 3A MFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C

paquet: SOD-128

Stock21 744

1SS361CT(TPL3)

Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA CST3

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6ns
Current - Reverse Leakage @ Vr: 500nA @ 80V
Operating Temperature - Junction: 150°C (Max)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3

paquet: SC-101, SOT-883

Stock7 104

TA7291FG(O,EL)

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 16HSOP

Motor Type - Stepper: -
Motor Type - AC, DC: Brushed DC
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (2)
Interface: Parallel
Technology: Bipolar
Step Resolution: -
Applications: General Purpose
Current - Output: 400mA
Voltage - Supply: 4.5 V ~ 20 V
Voltage - Load: 0 V ~ 20 V
Operating Temperature: -30°C ~ 75°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Supplier Device Package: 16-HSOP

paquet: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs

Stock10 440

TB62215AFG,8,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 28HSOP

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: Parallel
Technology: Power MOSFET
Step Resolution: 1, 1/2, 1/4
Applications: General Purpose
Current - Output: 3A
Voltage - Supply: 4.75 V ~ 5.25 V
Voltage - Load: 10 V ~ 38 V
Operating Temperature: -20°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 28-BSOP (0.346", 8.80mm) + 2 Heat Tabs
Supplier Device Package: 28-HSOP

paquet: 28-BSOP (0.346", 8.80mm) + 2 Heat Tabs

Stock2 240

TC7SZ05F,LJ(CT

Toshiba Semiconductor and Storage

IC INVERTER OPEN-DRAIN 5-SSOP

Logic Type: Inverter
Number of Circuits: 1
Number of Inputs: 1
Features: Open Drain
Voltage - Supply: 1.8 V ~ 5.5 V
Current - Quiescent (Max): 2µA
Current - Output High, Low: -, 32mA
Logic Level - Low: -
Logic Level - High: -
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: SMV
Package / Case: SC-74A, SOT-753

paquet: SC-74A, SOT-753

Stock21 738

TC75S59F,LF

Toshiba Semiconductor and Storage

IC C0MP GP CMOS OPEN DRAIN SMV

Type: General Purpose
Number of Elements: 1
Output Type: Open Drain
Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA
Current - Output (Typ): 25mA
Current - Quiescent (Max): 220µA
CMRR, PSRR (Typ): -
Propagation Delay (Max): 200ns
Hysteresis: -
Operating Temperature: -40°C ~ 85°C
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Supplier Device Package: SMV

paquet: SC-74A, SOT-753

Stock5 024

TMPM333FDFG(C,J)

Toshiba Semiconductor and Storage

IC MCU 32BIT 512KB FLASH 100LQFP

Core Processor: ARM? Cortex?-M3
Core Size: 32-Bit
Speed: 40MHz
Connectivity: I2C, SIO, UART/USART
Peripherals: POR, WDT
Number of I/O: 78
Program Memory Size: 512KB (512K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 32K x 8
Voltage - Supply (Vcc/Vdd): 2.7 V ~ 3.6 V
Data Converters: A/D 12x10b
Oscillator Type: External
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x14)

paquet: 100-LQFP

Stock7 908

TL1L4-NT0,L4A5B

Toshiba Semiconductor and Storage

POWER LED WHT 5700K 3535

Color: White, Cool
CCT (K): 5700K
Flux @ 85°C, Current - Test: 150 lm (140 lm ~ 160 lm)
Flux @ 25°C, Current - Test: -
Current - Test: 350mA
Voltage - Forward (Vf) (Typ): 2.8V
Lumens/Watt @ Current - Test: 153 lm/W
CRI (Color Rendering Index): 70
Current - Max: 1.5A
Viewing Angle: 120°
Mounting Type: Surface Mount
Package / Case: 1414 (3535 Metric)
Supplier Device Package: 3535
Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
Height - Seated (Max): 0.085" (2.15mm)

paquet: 1414 (3535 Metric)

Stock5 490

TLP109(V4,E

Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 5 LEAD

Number of Channels: 1
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Current Transfer Ratio (Max): -
Turn On / Turn Off Time (Typ): 800ns, 800ns (Max)
Rise / Fall Time (Typ): -
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 20V
Current - Output / Channel: 8mA
Voltage - Forward (Vf) (Typ): 1.64V
Current - DC Forward (If) (Max): 20mA
Vce Saturation (Max): -
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
Supplier Device Package: 6-SO, 5 Lead

paquet: 6-SOIC (0.179", 4.55mm Width) 5 Leads

Stock7 296

TLP116A(TPL,E

Toshiba Semiconductor and Storage

OPTOISO 3.75KV PUSH PULL SO6-5

Number of Channels: 1
Inputs - Side 1/Side 2: 1/0
Voltage - Isolation: 3750Vrms
Common Mode Transient Immunity (Min): 10kV/µs
Input Type: DC
Output Type: Push-Pull, Totem Pole
Current - Output / Channel: 10mA
Data Rate: 20MBd
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Rise / Fall Time (Typ): 15ns, 15ns
Voltage - Forward (Vf) (Typ): 1.58V
Current - DC Forward (If) (Max): 20mA
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
Supplier Device Package: 6-SO, 5 Lead

paquet: 6-SOIC (0.179", 4.55mm Width) 5 Leads

Stock36 000

7UL1G08FS,LF

Toshiba Semiconductor and Storage

L-MOS LVP SERIES SINGLE 2-INPUT

Logic Type: AND Gate
Number of Circuits: 1
Number of Inputs: 2
Features: -
Voltage - Supply: 0.9 V ~ 3.6 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.1 V ~ 0.4 V
Logic Level - High: 0.75 V ~ 2.48 V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.6V, 30pF
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Supplier Device Package: fSV
Package / Case: SOT-953

paquet: SOT-953

Stock84 420

TK090N65Z-S1F

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 30A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

paquet: -

Stock81

TCR2DG35-LF

Toshiba Semiconductor and Storage

LOW DROPOUT (LDO) IOUT: 200MA PD

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 3.5V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.11V @ 100mA
Current - Output: 200mA
Current - Quiescent (Iq): 70 µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-UFBGA, WLCSP
Supplier Device Package: 4-WCSP (0.79x0.79)

paquet: -

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SSM6N17FU-TE85L-F

Toshiba Semiconductor and Storage

MOSFET 2N-CH 50V 0.1A US6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 3V
Power - Max: 200mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

paquet: -

Stock8 982

TCR3UF28A-LM-CT

Toshiba Semiconductor and Storage

IC REG LINEAR 2.8V 300MA SMV

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 2.8V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.342V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): 680 nA
Current - Supply (Max): -
PSRR: 70dB (1kHz)
Control Features: Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

paquet: -

Stock16 308

TC7WH00FK-LJ-CT

Toshiba Semiconductor and Storage

IC GATE NAND 2CH 4-INP 8SSOP

Logic Type: NAND Gate
Number of Circuits: 2
Number of Inputs: 4
Features: -
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Max): 2 µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: -
Logic Level - High: -
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SSOP
Package / Case: 8-VFSOP (0.091", 2.30mm Width)

paquet: -

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CUHS15F40-H3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 1.5A US2H

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)

paquet: -

Stock45 045

74LCX02FT

Toshiba Semiconductor and Storage

IC GATE NOR 4CH 2-INP 14TSSOPB

Logic Type: NOR Gate
Number of Circuits: 4
Number of Inputs: 2
Features: -
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Max): 40 µA
Current - Output High, Low: 24mA, 24mA
Logic Level - Low: 0.7V ~ 0.8V
Logic Level - High: 1.7V ~ 2V
Max Propagation Delay @ V, Max CL: 6ns @ 3.3V, 50pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: 14-TSSOPB
Package / Case: 14-TSSOP (0.173", 4.40mm Width)

paquet: -

Stock7 500

JDV2S41FS-TPL3

Toshiba Semiconductor and Storage

DIODE VAR 15V UHF FSC

Capacitance @ Vr, F: 16pF @ 2V, 1MHz
Capacitance Ratio: -
Capacitance Ratio Condition: -
Voltage - Peak Reverse (Max): 15 V
Diode Type: Single
Q @ Vr, F: -
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: fSC

paquet: -

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TC74VHC00FT-EL

Toshiba Semiconductor and Storage

IC GATE NAND 4CH 2-INP 14-TSSOP

Logic Type: NAND Gate
Number of Circuits: 4
Number of Inputs: 2
Features: -
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Max): 2 µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.5V
Logic Level - High: 1.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)

paquet: -

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