Produits Toshiba Semiconductor and Storage

GT10J312(Q)

Toshiba Semiconductor and Storage

IGBT 600V 10A 60W TO220SM

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 10A
• Current - Collector Pulsed (Icm): 20A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
• Power - Max: 60W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 400ns/400ns
• Test Condition: 300V, 10A, 100 Ohm, 15V
• Reverse Recovery Time (trr): 200ns
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-220SM

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

TK40P03M1(T6RSS-Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 40A 3DP 2-7K1A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 20A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: DP
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

2SK2847(F)

Toshiba Semiconductor and Storage

MOSFET N-CH 900V 8A TO-3PN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 85W (Tc)
• Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 4A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P(N)IS
• Package / Case: TO-3P-3, SC-65-3

paquet: TO-3P-3, SC-65-3

TK39N60W5,S1VF

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 38.8A T0247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
• Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 300V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 270W (Tc)
• Rds On (Max) @ Id, Vgs: 74 mOhm @ 19.4A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

paquet: TO-247-3

3SK291(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET N-CH SMQ

• Transistor Type: N-Channel Dual Gate
• Frequency: 800MHz
• Gain: 22.5dB
• Voltage - Test: 6V
• Current Rating: 30mA
• Noise Figure: 2.5dB
• Current - Test: 10mA
• Power - Output: -
• Voltage - Rated: 12.5V
• Package / Case: SC-61AA
• Supplier Device Package: SMQ

paquet: SC-61AA

RN1302,LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W USM

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: USM

paquet: SC-70, SOT-323

RN2905T5LFT

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

paquet: 6-TSSOP, SC-88, SOT-363

RN2903,LF(CT

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22k
• Resistor - Emitter Base (R2) (Ohms): 22k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

paquet: 6-TSSOP, SC-88, SOT-363

1SS190TE85LF

Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA SC59-3

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io): 100mA
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Capacitance @ Vr, F: 4pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SC-59-3
• Operating Temperature - Junction: 125°C (Max)

paquet: TO-236-3, SC-59, SOT-23-3

TA78L005AP,T6F(J

Toshiba Semiconductor and Storage

IC REG LINEAR 150MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -30°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: LSTM

paquet: TO-226-3, TO-92-3 Long Body

TA4800AF(T6L1,Q)

Toshiba Semiconductor and Storage

IC REG LINEAR POS ADJ 1A 5HSIP

• Output Configuration: Positive
• Output Type: Adjustable
• Number of Regulators: 1
• Voltage - Input (Max): 16V
• Voltage - Output (Min/Fixed): 1.5V
• Voltage - Output (Max): 9V
• Voltage Dropout (Max): 0.5V @ 500mA
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 1.7mA ~ 20mA
• PSRR: 63dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-6, DPak (5 Leads + Tab)
• Supplier Device Package: 5-HSIP

paquet: TO-252-6, DPak (5 Leads + Tab)

TB7101F(T5L3.3,F)

Toshiba Semiconductor and Storage

IC REG BUCK 3.3V 1A SYNC 8SON

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Fixed
• Number of Outputs: 1
• Voltage - Input (Min): 4.3V
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Current - Output: 1A
• Frequency - Switching: 1MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: PS-8 (2.9x2.4)

paquet: 8-SMD, Flat Lead

TBD62503APG

Toshiba Semiconductor and Storage

IC LOAD SWITCH 7CH 0.3A 16DIP

• Switch Type: General Purpose
• Number of Outputs: 7
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 50V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.75A
• Rds On (Typ): -
• Input Type: Inverting
• Features: -
• Fault Protection: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-DIP (0.300", 7.62mm)
• Supplier Device Package: 16-DIP

paquet: 16-DIP (0.300", 7.62mm)

TCK1024G,LF

Toshiba Semiconductor and Storage

IC PWR SWITCH P-CHAN 1:1 WCSP6E

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: P-Channel
• Interface: On/Off
• Voltage - Load: 1.4 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): 1.54A
• Rds On (Typ): 31 mOhm
• Input Type: Non-Inverting
• Features: Load Discharge
• Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 6-UFBGA, WLCSP
• Supplier Device Package: 6-WCSPE (0.80x1.2)

paquet: 6-UFBGA, WLCSP

TC74LVX02FTELM

Toshiba Semiconductor and Storage

IC GATE NOR 4CH 2-INP 14-TSSOP

• Logic Type: NOR Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2 V ~ 3.6 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 4mA, 4mA
• Logic Level - Low: 0.5 V ~ 0.8 V
• Logic Level - High: 1.5 V ~ 2.4 V
• Max Propagation Delay @ V, Max CL: 10.1ns @ 3.3V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-TSSOP
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)

paquet: 14-TSSOP (0.173", 4.40mm Width)

TC7PA34FU(T5L,F,T)

Toshiba Semiconductor and Storage

IC BUFFER NON-INV DUAL 6SSOP

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 2
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 24mA, 24mA
• Voltage - Supply: 1.8 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

paquet: 6-TSSOP, SC-88, SOT-363

DF2B7M2SL,L3F

Toshiba Semiconductor and Storage

TVS DIODE 5VWM 20VC

• Type: Steering (Rail to Rail)
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 5V (Max)
• Voltage - Breakdown (Min): 6V
• Voltage - Clamping (Max) @ Ipp: 20V
• Current - Peak Pulse (10/1000µs): 2A (8/20µs)
• Power - Peak Pulse: 40W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 0.2pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: SL2

paquet: 0201 (0603 Metric)

DF2S30FS,L3M

Toshiba Semiconductor and Storage

TVS DIODE 23VWM

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 23V (Max)
• Voltage - Breakdown (Min): 28V
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 7pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: SOD-923
• Supplier Device Package: SOD-923

paquet: SOD-923

4N36(SHORT,F)

Toshiba Semiconductor and Storage

OPTOISO 2.5KV TRANS W/BASE 6DIP

• Number of Channels: 1
• Voltage - Isolation: 2500Vrms
• Current Transfer Ratio (Min): 40% @ 10mA
• Current Transfer Ratio (Max): -
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): -
• Input Type: DC
• Output Type: Transistor with Base
• Voltage - Output (Max): 30V
• Current - Output / Channel: 100mA
• Voltage - Forward (Vf) (Typ): 1.15V
• Current - DC Forward (If) (Max): 60mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 100°C
• Mounting Type: Through Hole
• Package / Case: 6-DIP (0.300", 7.62mm)
• Supplier Device Package: 6-DIP

paquet: 6-DIP (0.300", 7.62mm)

TCR2EE14,LM(CT

Toshiba Semiconductor and Storage

200MA LDO VOUT1.4V DROPOUT180MV

• Output Configuration: -
• Output Type: -
• Number of Regulators: -
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: -
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

paquet: -

TCR2EE125,LM(CT

Toshiba Semiconductor and Storage

200MA LDO VOUT1.25V DROPOUT180MV

• Output Configuration: -
• Output Type: -
• Number of Regulators: -
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: -
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

paquet: -

TCR3UM28A,LF

Toshiba Semiconductor and Storage

LOW DROPOUT (LDO) LINEAR VOLTAGE

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 2.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.327V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): 680nA
• Current - Supply (Max): -
• PSRR: 70dB (1kHz)
• Control Features: Current Limit, Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-UDFN Exposed Pad
• Supplier Device Package: 4-DFN (1x1)

paquet: 4-UDFN Exposed Pad

RN1106-LXHF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 4.7 kOhms
• Resistor - Emitter Base (R2) (Ohms): 47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250 MHz
• Power - Max: 100 mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SSM

paquet: -

TCR3UF18A-LM-CT

Toshiba Semiconductor and Storage

IC REG LINEAR 1.8V 300MA SMV

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.464V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): 680 nA
• Current - Supply (Max): -
• PSRR: 70dB (1kHz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

paquet: -

2SC5354-TOJSQ-O

Toshiba Semiconductor and Storage

TRANSISTOR NPN TO-3PN

• Transistor Type: -
• Current - Collector (Ic) (Max): -
• Voltage - Collector Emitter Breakdown (Max): -
• Vce Saturation (Max) @ Ib, Ic: -
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Power - Max: -
• Frequency - Transition: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

paquet: -

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TK5A80E-S4X

Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO-

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800 V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.5A, 10V
• Operating Temperature: 150°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

paquet: -

TPH1R104PB-L1XHQ

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 120A 8SOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 960mW (Ta), 132W (Tc)
• Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

paquet: -

TK170V65Z-LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 18A 5DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 730µA
• Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 170mOhm @ 9A, 10V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: 4-DFN-EP (8x8)
• Package / Case: 4-VSFN Exposed Pad

paquet: -