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Produits Toshiba Semiconductor and Storage

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SSM3K72CTC,L3F
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 0.15A CST3C

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: CST3C
  • Package / Case: SC-101, SOT-883
paquet: SC-101, SOT-883
Stock93 378
2SA1429-Y(T2TR,F,M
Toshiba Semiconductor and Storage

TRANS PNP 2A 80V SC71

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-71
  • Supplier Device Package: MSTM
paquet: SC-71
Stock7 248
hot 2SA1425-Y,T2F(J
Toshiba Semiconductor and Storage

TRANS PNP 800MA 120V SC71

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-71
  • Supplier Device Package: MSTM
paquet: SC-71
Stock24 000
RN1962FE(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
paquet: SOT-563, SOT-666
Stock6 560
TA78L008AP(6DNS,FM
Toshiba Semiconductor and Storage

IC REG LINEAR 150MA LSTM

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: 1
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 150mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -30°C ~ 85°C
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: LSTM
paquet: TO-226-3, TO-92-3 Long Body
Stock2 688
TCR5AM08,LF
Toshiba Semiconductor and Storage

IC REG LINEAR 0.8V 500MA 5DFNB

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 0.8V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 500mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 55µA ~ 68µA
  • PSRR: 70dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XDFN Exposed Pad
  • Supplier Device Package: 5-DFNB (1.2x1.2)
paquet: 4-XDFN Exposed Pad
Stock40 170
TB7101AF(T5L1.5,F)
Toshiba Semiconductor and Storage

IC REG BUCK 1.5V 1A SYNC 8SON

  • Function: Step-Down
  • Output Configuration: Positive
  • Topology: Buck
  • Output Type: Fixed
  • Number of Outputs: 1
  • Voltage - Input (Min): 2.7V
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 1.5V
  • Voltage - Output (Max): -
  • Current - Output: 1A
  • Frequency - Switching: 1MHz
  • Synchronous Rectifier: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: PS-8 (2.9x2.4)
paquet: 8-SMD, Flat Lead
Stock5 136
TBD62064AFAG,EHZ
Toshiba Semiconductor and Storage

IC DRVR TRANS ARRAY 4-CH 24SSOP

  • Switch Type: General Purpose
  • Number of Outputs: 4
  • Ratio - Input:Output: 1:1
  • Output Configuration: Low Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 50V (Max)
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 1.25A
  • Rds On (Typ): 430 mOhm
  • Input Type: Inverting
  • Features: -
  • Fault Protection: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 24-SOP (0.236", 6.00mm Width)
  • Supplier Device Package: 24-SSOP
paquet: 24-SOP (0.236", 6.00mm Width)
Stock15 936
TB6674PG(C,8,Z,HZ)
Toshiba Semiconductor and Storage

TWO PHASE BIPOLAR STEPPING MOTOR

  • Motor Type - Stepper: Bipolar
  • Motor Type - AC, DC: -
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (4)
  • Interface: Parallel
  • Technology: Power MOSFET
  • Step Resolution: -
  • Applications: General Purpose
  • Current - Output: 350mA
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Voltage - Load: 2.7 V ~ 22 V
  • Operating Temperature: -30°C ~ 75°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-DIP
paquet: 16-DIP (0.300", 7.62mm)
Stock16 080
TB6560AHQ,8
Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 25HZIP

  • Motor Type - Stepper: Bipolar
  • Motor Type - AC, DC: -
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (4)
  • Interface: Parallel
  • Technology: Power MOSFET
  • Step Resolution: 1, 1/2, 1/4, 1/8, 1/16
  • Applications: General Purpose
  • Current - Output: 3A
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Voltage - Load: 4.5 V ~ 34 V
  • Operating Temperature: -30°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 25-SIP, Formed Leads
  • Supplier Device Package: 25-HZIP
paquet: 25-SIP, Formed Leads
Stock24 240
hot TC58NVG1S3HBAI4
Toshiba Semiconductor and Storage

IC EEPROM 2GBIT 25NS 63FBGA

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 2Gb (256M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-TFBGA (9x11)
paquet: 63-VFBGA
Stock9 756
TC58CYG0S3HQAIE
Toshiba Semiconductor and Storage

1GB SERIAL NAND 24NM SOP16 1.8V

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 155µs
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOP
paquet: 16-SOIC (0.295", 7.50mm Width)
Stock5 168
TC7S02F,LF
Toshiba Semiconductor and Storage

IC GATE NOR 1CH 2-INP SMV

  • Logic Type: NOR Gate
  • Number of Circuits: 1
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 2 V ~ 6 V
  • Current - Quiescent (Max): 1µA
  • Current - Output High, Low: 2.6mA, 2.6mA
  • Logic Level - Low: 0.5 V ~ 1.8 V
  • Logic Level - High: 1.5 V ~ 4.2 V
  • Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMV
  • Package / Case: SC-74A, SOT-753
paquet: SC-74A, SOT-753
Stock23 040
TD62004APG,N
Toshiba Semiconductor and Storage

IC DRIVER DARL SNK TTL 7CH 16DIP

  • Type: Driver
  • Protocol: -
  • Number of Drivers/Receivers: 7/0
  • Duplex: -
  • Receiver Hysteresis: -
  • Data Rate: -
  • Voltage - Supply: 0 V ~ 50 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-DIP
paquet: 16-DIP (0.300", 7.62mm)
Stock7 184
DF2B5M4CT,L3F
Toshiba Semiconductor and Storage

ESD DIODE BI-DIRECTIONAL

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 3.6V (Max)
  • Voltage - Breakdown (Min): 4V
  • Voltage - Clamping (Max) @ Ipp: 15V
  • Current - Peak Pulse (10/1000µs): 2A (8/20µs)
  • Power - Peak Pulse: 30W
  • Power Line Protection: No
  • Applications: -
  • Capacitance @ Frequency: 0.2pF @ 1MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-882
  • Supplier Device Package: CST2
paquet: SOD-882
Stock154 206
TC78S600FNG,C,EL
Toshiba Semiconductor and Storage

IC STEP MOTOR DRVR PAR 20SSOP

  • Motor Type - Stepper: Bipolar
  • Motor Type - AC, DC: -
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (4)
  • Interface: Parallel
  • Technology: Power MOSFET
  • Step Resolution: 1/2, 1/4, 1/8, 1/16
  • Applications: General Purpose
  • Current - Output: 800mA
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Voltage - Load: 2.5 V ~ 15 V
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 20-LSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 20-SSOP
paquet: 20-LSSOP (0.173", 4.40mm Width)
Stock3 040
74LCX126FT
Toshiba Semiconductor and Storage

IC BUF NON-INVERT 3.6V 14TSSOP

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 4
  • Number of Bits per Element: 1
  • Input Type: -
  • Output Type: 3-State
  • Current - Output High, Low: 24mA, 24mA
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 14-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 14-TSSOP
paquet: 14-TSSOP (0.173", 4.40mm Width)
Stock4 368
TMPM36BFYFG(DBB)
Toshiba Semiconductor and Storage

TX FAMILY MCU

  • Core Processor: ARM® Cortex®-M3
  • Core Size: 32-Bit
  • Speed: 80MHz
  • Connectivity: EBI/EMI, I²C, IrDA, Microwire, SIO, SPI, SSI, SSP, UART/USART
  • Peripherals: DMA, LVD, POR, WDT
  • Number of I/O: 72
  • Program Memory Size: 256KB (256K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 66K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7 V ~ 3.6 V
  • Data Converters: A/D 16x12b
  • Oscillator Type: External
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-LQFP (14x14)
paquet: 100-LQFP
Stock18 996
TCR8BM09A-L3F
Toshiba Semiconductor and Storage

800MA LDO, VOUT=0.9V, DROPOUT=17

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 0.9V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.22V @ 800mA
  • Current - Output: 800mA
  • Current - Quiescent (Iq): 36 µA
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: Current Limit, Enable
  • Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XDFN Exposed Pad
  • Supplier Device Package: 5-DFNB (1.2x1.2)
paquet: -
Stock29 700
2SD1223-TE16L1-NQ
Toshiba Semiconductor and Storage

TRANS NPN DARL 80V 4A PW-MOLD

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 4 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 6mA, 3A
  • Current - Collector Cutoff (Max): 20µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 2V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PW-MOLD
paquet: -
Stock3 663
RN1906-LXHF-CT
Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) NP

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
paquet: -
Stock8 544
TC7WH04FU-TE12L
Toshiba Semiconductor and Storage

IC INVERTER 8-SSOP

  • Logic Type: Inverter
  • Number of Circuits: 3
  • Number of Inputs: 1
  • Features: -
  • Voltage - Supply: 2V ~ 5.5V
  • Current - Quiescent (Max): 2 µA
  • Current - Output High, Low: 8mA, 8mA
  • Logic Level - Low: 0.5V
  • Logic Level - High: 3.85V
  • Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SSOP
  • Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
paquet: -
Request a Quote
RN2904FE-LXHF-CT
Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
paquet: -
Stock24 000
TCR2LE085-LM-CT
Toshiba Semiconductor and Storage

LOW DROPOUT (LDO) IOUT: 200MA PD

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 0.85V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 1.58V @ 150mA
  • Current - Output: 200mA
  • Current - Quiescent (Iq): 2 µA
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: Enable
  • Protection Features: Over Current
  • Operating Temperature: -40°C ~ 85°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-553
  • Supplier Device Package: ESV
paquet: -
Request a Quote
RN2904-LXHF-CT
Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) PN

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
paquet: -
Stock8 670
TK110E10PL-S1X
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 87W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.7mOhm @ 21A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
paquet: -
Stock813
RN4988-TE85L-F
Toshiba Semiconductor and Storage

NPN + PNP BRT Q1BSR=22KOHM Q1BER

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz, 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
paquet: -
Stock540
SSM3K16CT-L3F
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 100MA CST3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Vgs(th) (Max) @ Id: 1.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 100mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: CST3
  • Package / Case: SC-101, SOT-883
paquet: -
Stock106 068