Page 278 - Produits Infineon Technologies

Référence	Fabricant	Description	paquet	Stock
IKA08N65F5XKSA1	Infineon Technologies	IGBT 650V 10.8A 31.2W TO220-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 10.8A Current - Collector Pulsed (Icm): 24A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Power - Max: 31.2W Switching Energy: 70µJ (on), 20µJ (off) Input Type: Standard Gate Charge: 22nC Td (on/off) @ 25°C: 10ns/116ns Test Condition: 400V, 4A, 48 Ohm, 15V Reverse Recovery Time (trr): 41ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: PG-TO-220-3	paquet: TO-220-3	Stock8 556
IRG7T75HF12A	Infineon Technologies	MOD IGBT 1200V 75A POWIR 34 IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 150A Power - Max: 450W Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 10.4nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: POWIR? 34 Module Supplier Device Package: POWIR? 34	paquet: POWIR? 34 Module	Stock3 632
IPI80N06S207AKSA1	Infineon Technologies	MOSFET N-CH 55V 80A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 180µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 68A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	paquet: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5 024
IPB25N06S3-25	Infineon Technologies	MOSFET N-CH 55V 25A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1862pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 24.8 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock103 464
IRFZ46ZPBF	Infineon Technologies	MOSFET N-CH 55V 51A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 82W (Tc) Rds On (Max) @ Id, Vgs: 13.6 mOhm @ 31A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	paquet: TO-220-3	Stock10 944
IPS040N03LGAKMA1	Infineon Technologies	MOSFET N-CHANNEL 30V 90A TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 15V Vgs (Max): - FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	paquet: TO-251-3 Stub Leads, IPak	Stock4 944
IPB035N08N3 G	Infineon Technologies	MOSFET N-CH 80V 100A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 155µA Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8110pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7 808
IRFP064NPBF	Infineon Technologies	MOSFET N-CH 55V 110A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 59A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	paquet: TO-247-3	Stock161 508
BSZ42DN25NS3 G	Infineon Technologies	MOSFET N-CH 250V 5A TSDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33.8W (Tc) Rds On (Max) @ Id, Vgs: 425 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	paquet: 8-PowerTDFN	Stock51 054
IRF7907TRPBF	Infineon Technologies	MOSFET 2N-CH 30V 9.1A/11A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.1A, 11A Rds On (Max) @ Id, Vgs: 16.4 mOhm @ 9.1A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	paquet: 8-SOIC (0.154", 3.90mm Width)	Stock103 440
BCR 116T E6327	Infineon Technologies	TRANS PREBIAS NPN 250MW SC75 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 150MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	paquet: SC-75, SOT-416	Stock2 656
IR3310	Infineon Technologies	IC SWITCH HI-SIDE 1CH TO-220-5 Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 6 V ~ 28 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 23A Rds On (Typ): 5.5 mOhm Input Type: Non-Inverting Features: - Fault Protection: Current Limiting (Adjustable), Over Temperature Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: TO-220-5 Supplier Device Package: TO-220AB (5-LEAD)	paquet: TO-220-5	Stock6 480
XMC1202T028X0032ABXUMA1	Infineon Technologies	IC MCU 32BIT 32KB FLASH 28TSSOP Core Processor: ARM? Cortex?-M0 Core Size: 32-Bit Speed: 32MHz Connectivity: I2C, LIN, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Number of I/O: 20 Program Memory Size: 32KB (32K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V Data Converters: A/D 14x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: - Package / Case: 28-TSSOP (0.173", 4.40mm Width) Supplier Device Package: PG-TSSOP-28-16	paquet: 28-TSSOP (0.173", 4.40mm Width)	Stock7 392
TLE98432QXXUMA1	Infineon Technologies	EMBEDDED POWER Applications: Automotive Core Processor: ARM? Cortex?-M0 Program Memory Type: FLASH (52 kB) Controller Series: - RAM Size: 4K x 8 Interface: LIN, SSI, UART Number of I/O: 10 Voltage - Supply: 3 V ~ 28 V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: PG-VQFN-48-31	paquet: 48-VFQFN Exposed Pad	Stock4 304
BGT24ATR12E6433XUMA1	Infineon Technologies	IC SWITCH RF 32VQFN Frequency - Lower: - Frequency - Upper: - Isolation @ Frequency: - Insertion Loss @ Frequency: - IIP3: - Topology: - Circuit: - P1dB: - Features: - Impedance: - Operating Temperature: - Voltage - Supply: - RF Type: - Package / Case: 32-VFQFN Exposed Pad Supplier Device Package: PG-VQFN-32-9	paquet: 32-VFQFN Exposed Pad	Stock8 604
TLE94004EPXUMA1	Infineon Technologies	BODY BRIDGES Output Configuration: Half Bridge (4) Applications: DC Motors, General Purpose Interface: Direct Load Type: Inductive Technology: DMOS Rds On (Typ): 825 mOhm LS, 825 mOhm HS Current - Output / Channel: 2A Current - Peak Output: - Voltage - Supply: 3 V ~ 5.5 V Voltage - Load: 5.5 V ~ 20 V Operating Temperature: -40°C ~ 150°C (TJ) Features: - Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: PG-TSDSO-14	paquet: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad	Stock4 112
40060891	Infineon Technologies	INFINEON Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	paquet: -	Request a Quote
CY8C4125PVQ-482	Infineon Technologies	IC MCU 32BIT 32KB FLASH 28SSOP Core Processor: ARM® Cortex®-M0 Core Size: 32-Bit Single-Core Speed: 24MHz Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Number of I/O: 24 Program Memory Size: 32KB (32K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 4K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Data Converters: A/D 8x12b SAR; D/A 1x7b, 1x8b Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 28-SSOP (0.209", 5.30mm Width) Supplier Device Package: 28-SSOP	paquet: -	Request a Quote
CY8C4147AZES588XQLA1	Infineon Technologies	PSOC4 - GENERAL Core Processor: ARM® Cortex®-M0+ Core Size: 32-Bit Speed: 48MHz Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT Number of I/O: 84 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Data Converters: A/D 16x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	paquet: -	Request a Quote
CY8C4147LQSS245XQLA1	Infineon Technologies	PSOC4 - GENERAL Core Processor: ARM® Cortex®-M0+ Core Size: 32-Bit Speed: 48MHz Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, TRNG, WDT Number of I/O: 54 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount, Wettable Flank Package / Case: 64-VFQFN Exposed Pad Supplier Device Package: 64-QFN (9x9)	paquet: -	Request a Quote
FP100R07N3E4B16BOSA1	Infineon Technologies	LOW POWER ECONO AG-ECONO3-3 IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	paquet: -	Request a Quote
AIKB40N65DH5ATMA1	Infineon Technologies	IGBT NPT 650V 40A TO263-3 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 40 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2	paquet: -	Stock5 862
IRFHM8363TR2PBF	Infineon Technologies	MOSFET 2N-CH 30V 11A 8PQFN FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V Power - Max: 2.7W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-PQFN-Dual (3.3x3.3)	paquet: -	Request a Quote
S27KL0643GABHV020	Infineon Technologies	IC PSRAM 64MBIT SPI/OCTAL 24FBGA Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 64Mbit Memory Interface: SPI - Octal I/O Clock Frequency: 200 MHz Write Cycle Time - Word, Page: 35ns Access Time: 35 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (6x8)	paquet: -	Request a Quote
BSF110N06NT3GXUMA1	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 33µA Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MG-WDSON-2 Package / Case: DirectFET™ Isometric ST	paquet: -	Request a Quote
IAUA200N04S5N010ATMA1	Infineon Technologies	MOSFET_(20V 40V) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-5-1 Package / Case: 5-PowerSFN	paquet: -	Request a Quote
S80KS2562GABHI023	Infineon Technologies	IC PSRAM 256MBIT HYPERBUS 24FBGA Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 256Mbit Memory Interface: HyperBus Clock Frequency: 200 MHz Write Cycle Time - Word, Page: 35ns Access Time: 35 ns Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (6x8)	paquet: -	Request a Quote
CY8C4546AZI-S475	Infineon Technologies	IC MCU 32BIT 64KB FLASH 64TQFP Core Processor: ARM® Cortex®-M0+ Core Size: 32-Bit Single-Core Speed: 48MHz Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Number of I/O: 53 Program Memory Size: 64KB (64K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (10x10)	paquet: -	Request a Quote

IKA08N65F5XKSA1

Infineon Technologies

IGBT 650V 10.8A 31.2W TO220-3

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 10.8A
Current - Collector Pulsed (Icm): 24A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Power - Max: 31.2W
Switching Energy: 70µJ (on), 20µJ (off)
Input Type: Standard
Gate Charge: 22nC
Td (on/off) @ 25°C: 10ns/116ns
Test Condition: 400V, 4A, 48 Ohm, 15V
Reverse Recovery Time (trr): 41ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: PG-TO-220-3

paquet: TO-220-3

Stock8 556

IRG7T75HF12A

Infineon Technologies

MOD IGBT 1200V 75A POWIR 34

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 150A
Power - Max: 450W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 10.4nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: POWIR? 34 Module
Supplier Device Package: POWIR? 34

paquet: POWIR? 34 Module

Stock3 632

IPI80N06S207AKSA1

Infineon Technologies

MOSFET N-CH 55V 80A TO262-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 180µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 68A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

paquet: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock5 024

IPB25N06S3-25

Infineon Technologies

MOSFET N-CH 55V 25A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1862pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 24.8 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock103 464

IRFZ46ZPBF

Infineon Technologies

MOSFET N-CH 55V 51A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 82W (Tc)
Rds On (Max) @ Id, Vgs: 13.6 mOhm @ 31A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

paquet: TO-220-3

Stock10 944

IPS040N03LGAKMA1

Infineon Technologies

MOSFET N-CHANNEL 30V 90A TO251-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 15V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO251-3
Package / Case: TO-251-3 Stub Leads, IPak

paquet: TO-251-3 Stub Leads, IPak

Stock4 944

IPB035N08N3 G

Infineon Technologies

MOSFET N-CH 80V 100A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.5V @ 155µA
Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8110pF @ 40V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-2
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7 808

IRFP064NPBF

Infineon Technologies

MOSFET N-CH 55V 110A TO-247AC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 8 mOhm @ 59A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3

paquet: TO-247-3

Stock161 508

BSZ42DN25NS3 G

Infineon Technologies

MOSFET N-CH 250V 5A TSDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 13µA
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 33.8W (Tc)
Rds On (Max) @ Id, Vgs: 425 mOhm @ 2.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8
Package / Case: 8-PowerTDFN

paquet: 8-PowerTDFN

Stock51 054

IRF7907TRPBF

Infineon Technologies

MOSFET 2N-CH 30V 9.1A/11A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.1A, 11A
Rds On (Max) @ Id, Vgs: 16.4 mOhm @ 9.1A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

paquet: 8-SOIC (0.154", 3.90mm Width)

Stock103 440

BCR 116T E6327

Infineon Technologies

TRANS PREBIAS NPN 250MW SC75

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 150MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: PG-SC-75

paquet: SC-75, SOT-416

Stock2 656

IR3310

Infineon Technologies

IC SWITCH HI-SIDE 1CH TO-220-5

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 6 V ~ 28 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 23A
Rds On (Typ): 5.5 mOhm
Input Type: Non-Inverting
Features: -
Fault Protection: Current Limiting (Adjustable), Over Temperature
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: TO-220-5
Supplier Device Package: TO-220AB (5-LEAD)

paquet: TO-220-5

Stock6 480

XMC1202T028X0032ABXUMA1

Infineon Technologies

IC MCU 32BIT 32KB FLASH 28TSSOP

Core Processor: ARM? Cortex?-M0
Core Size: 32-Bit
Speed: 32MHz
Connectivity: I2C, LIN, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Number of I/O: 20
Program Memory Size: 32KB (32K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
Data Converters: A/D 14x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: -
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: PG-TSSOP-28-16

paquet: 28-TSSOP (0.173", 4.40mm Width)

Stock7 392

TLE98432QXXUMA1

Infineon Technologies

EMBEDDED POWER

Applications: Automotive
Core Processor: ARM? Cortex?-M0
Program Memory Type: FLASH (52 kB)
Controller Series: -
RAM Size: 4K x 8
Interface: LIN, SSI, UART
Number of I/O: 10
Voltage - Supply: 3 V ~ 28 V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: PG-VQFN-48-31

paquet: 48-VFQFN Exposed Pad

Stock4 304

BGT24ATR12E6433XUMA1

Infineon Technologies

IC SWITCH RF 32VQFN

Frequency - Lower: -
Frequency - Upper: -
Isolation @ Frequency: -
Insertion Loss @ Frequency: -
IIP3: -
Topology: -
Circuit: -
P1dB: -
Features: -
Impedance: -
Operating Temperature: -
Voltage - Supply: -
RF Type: -
Package / Case: 32-VFQFN Exposed Pad
Supplier Device Package: PG-VQFN-32-9

paquet: 32-VFQFN Exposed Pad

Stock8 604

TLE94004EPXUMA1

Infineon Technologies

BODY BRIDGES

Output Configuration: Half Bridge (4)
Applications: DC Motors, General Purpose
Interface: Direct
Load Type: Inductive
Technology: DMOS
Rds On (Typ): 825 mOhm LS, 825 mOhm HS
Current - Output / Channel: 2A
Current - Peak Output: -
Voltage - Supply: 3 V ~ 5.5 V
Voltage - Load: 5.5 V ~ 20 V
Operating Temperature: -40°C ~ 150°C (TJ)
Features: -
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: PG-TSDSO-14

paquet: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad

Stock4 112

40060891

Infineon Technologies

INFINEON

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

paquet: -

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CY8C4125PVQ-482

Infineon Technologies

IC MCU 32BIT 32KB FLASH 28SSOP

Core Processor: ARM® Cortex®-M0
Core Size: 32-Bit Single-Core
Speed: 24MHz
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Number of I/O: 24
Program Memory Size: 32KB (32K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 4K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Data Converters: A/D 8x12b SAR; D/A 1x7b, 1x8b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Supplier Device Package: 28-SSOP

paquet: -

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CY8C4147AZES588XQLA1

Infineon Technologies

PSOC4 - GENERAL

Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Speed: 48MHz
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Number of I/O: 84
Program Memory Size: 128KB (128K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Data Converters: A/D 16x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

paquet: -

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CY8C4147LQSS245XQLA1

Infineon Technologies

PSOC4 - GENERAL

Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Speed: 48MHz
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, TRNG, WDT
Number of I/O: 54
Program Memory Size: 128KB (128K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 64-VFQFN Exposed Pad
Supplier Device Package: 64-QFN (9x9)

paquet: -

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FP100R07N3E4B16BOSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO3-3

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

paquet: -

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AIKB40N65DH5ATMA1

Infineon Technologies

IGBT NPT 650V 40A TO263-3

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 40 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2

paquet: -

Stock5 862

IRFHM8363TR2PBF

Infineon Technologies

MOSFET 2N-CH 30V 11A 8PQFN

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V
Power - Max: 2.7W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-PQFN-Dual (3.3x3.3)

paquet: -

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S27KL0643GABHV020

Infineon Technologies

IC PSRAM 64MBIT SPI/OCTAL 24FBGA

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 64Mbit
Memory Interface: SPI - Octal I/O
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: 35ns
Access Time: 35 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)

paquet: -

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BSF110N06NT3GXUMA1

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 33µA
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: MG-WDSON-2
Package / Case: DirectFET™ Isometric ST

paquet: -

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IAUA200N04S5N010ATMA1

Infineon Technologies

MOSFET_(20V 40V)

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs(th) (Max) @ Id: 3.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-5-1
Package / Case: 5-PowerSFN

paquet: -

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S80KS2562GABHI023

Infineon Technologies

IC PSRAM 256MBIT HYPERBUS 24FBGA

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 256Mbit
Memory Interface: HyperBus
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: 35ns
Access Time: 35 ns
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)

paquet: -

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CY8C4546AZI-S475

Infineon Technologies

IC MCU 32BIT 64KB FLASH 64TQFP

Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit Single-Core
Speed: 48MHz
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Number of I/O: 53
Program Memory Size: 64KB (64K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (10x10)

paquet: -

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