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Transistors - FET, MOSFET - Simples

Dossiers 42 029
Page  599/1 502
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Description
paquet
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot NP60N03SUG-E1-AY
Renesas Electronics America

MOSFET N-CH 30V 60A TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 30A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (MP-3ZK)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock122 256
MOSFET (Metal Oxide)
30V
60A (Tc)
10V
4V @ 250µA
135nC @ 10V
7500pF @ 25V
±20V
-
1.2W (Ta), 105W (Tc)
3.8 mOhm @ 30A, 10V
175°C (TJ)
Surface Mount
TO-252 (MP-3ZK)
TO-252-3, DPak (2 Leads + Tab), SC-63
APT20M22B2VFRG
Microsemi Corporation

MOSFET N-CH 200V 100A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 435nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 520W (Tc)
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX? [B2]
  • Package / Case: TO-247-3 Variant
paquet: TO-247-3 Variant
Stock4 672
MOSFET (Metal Oxide)
200V
100A (Tc)
10V
4V @ 2.5mA
435nC @ 10V
10200pF @ 25V
±30V
-
520W (Tc)
22 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
T-MAX? [B2]
TO-247-3 Variant
PHP160NQ08T,127
NXP

MOSFET N-CH 75V 75A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5585pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock3 232
MOSFET (Metal Oxide)
75V
75A (Tc)
10V
4V @ 1mA
91nC @ 10V
5585pF @ 25V
±20V
-
300W (Tc)
5.6 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IRL530STRL
Vishay Siliconix

MOSFET N-CH 100V 15A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 9A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock3 728
MOSFET (Metal Oxide)
100V
15A (Tc)
4V, 5V
2V @ 250µA
28nC @ 5V
930pF @ 25V
±10V
-
3.7W (Ta), 88W (Tc)
160 mOhm @ 9A, 5V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PH4330L,115
NXP

MOSFET N-CH 30V 95.9A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 95.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2786pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
paquet: SC-100, SOT-669
Stock2 080
MOSFET (Metal Oxide)
30V
95.9A (Tc)
4.5V, 10V
2.5V @ 1mA
22.9nC @ 4.5V
2786pF @ 12V
±20V
-
62.5W (Tc)
4.3 mOhm @ 25A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
AUIRFU8401
Infineon Technologies

MOSFET N-CH 40V 100A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 79W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.25 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
paquet: TO-251-3 Short Leads, IPak, TO-251AA
Stock2 880
MOSFET (Metal Oxide)
40V
100A (Tc)
10V
3.9V @ 500µA
63nC @ 10V
2200pF @ 25V
±20V
-
79W (Tc)
4.25 mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
IPD50P03P4L11ATMA1
Infineon Technologies

MOSFET P-CH 30V 50A TO252-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 85µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3770pF @ 25V
  • Vgs (Max): +5V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 58W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock7 440
MOSFET (Metal Oxide)
30V
50A (Tc)
4.5V, 10V
2V @ 85µA
55nC @ 10V
3770pF @ 25V
+5V, -16V
-
58W (Tc)
10.5 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
IRFS11N50ATRRP
Vishay Siliconix

MOSFET N-CH 500V 11A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1423pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 520 mOhm @ 6.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock2 816
MOSFET (Metal Oxide)
500V
11A (Tc)
10V
4V @ 250µA
52nC @ 10V
1423pF @ 25V
±30V
-
170W (Tc)
520 mOhm @ 6.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
DMN60H4D5SK3-13
Diodes Incorporated

MOSFET BVDSS: 501V 650V TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 273.5pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 41W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock5 936
MOSFET (Metal Oxide)
600V
2.5A (Tc)
10V
4V @ 250µA
8.2nC @ 10V
273.5pF @ 25V
±30V
-
41W (Tc)
4.5 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
CEDM8001VL TR
Central Semiconductor Corp

MOSFET P-CH 20V 0.1A SOT883

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.66nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 3V
  • Vgs (Max): 10V
  • FET Feature: -
  • Power Dissipation (Max): 100mW (Ta)
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-883VL
  • Package / Case: SC-101, SOT-883
paquet: SC-101, SOT-883
Stock4 752
MOSFET (Metal Oxide)
20V
100mA (Ta)
1.5V, 4V
1.1V @ 250µA
0.66nC @ 4.5V
45pF @ 3V
10V
-
100mW (Ta)
8 Ohm @ 10mA, 4V
-65°C ~ 150°C (TJ)
Surface Mount
SOT-883VL
SC-101, SOT-883
hot FDMC7672
Fairchild/ON Semiconductor

MOSFET N-CH 30V 8-MLP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3890pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta), 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 16.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-MLP (3.3x3.3)
  • Package / Case: 8-PowerWDFN
paquet: 8-PowerWDFN
Stock256 428
MOSFET (Metal Oxide)
30V
16.9A (Ta), 20A (Tc)
4.5V, 10V
3V @ 250µA
57nC @ 10V
3890pF @ 15V
±20V
-
2.3W (Ta), 33W (Tc)
5.7 mOhm @ 16.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-MLP (3.3x3.3)
8-PowerWDFN
SIHU6N65E-GE3
Vishay Siliconix

MOSFET N-CH 650V 6A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK (TO-251)
  • Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
paquet: TO-251-3 Long Leads, IPak, TO-251AB
Stock27 300
MOSFET (Metal Oxide)
650V
7A (Tc)
10V
4V @ 250µA
48nC @ 10V
820pF @ 100V
±30V
-
78W (Tc)
600 mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
IPAK (TO-251)
TO-251-3 Long Leads, IPak, TO-251AB
hot SPD15P10PLGBTMA1
Infineon Technologies

MOSFET P-CH 100V 15A TO252-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1.54mA
  • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 128W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 11.3A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock14 616
MOSFET (Metal Oxide)
100V
15A (Tc)
4.5V, 10V
2V @ 1.54mA
62nC @ 10V
1490pF @ 25V
±20V
-
128W (Tc)
200 mOhm @ 11.3A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
BSB014N04LX3 G
Infineon Technologies

MOSFET N-CH 40V 180A 2WDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 196nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 16900pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 30A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MG-WDSON-2, CanPAK M?
  • Package / Case: 3-WDSON
paquet: 3-WDSON
Stock49 104
MOSFET (Metal Oxide)
40V
36A (Ta), 180A (Tc)
4.5V, 10V
2V @ 250µA
196nC @ 10V
16900pF @ 20V
±20V
-
2.8W (Ta), 89W (Tc)
1.4 mOhm @ 30A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
MG-WDSON-2, CanPAK M?
3-WDSON
NVBLS0D5N04CTXG
onsemi

MOSFET N-CH 40V 65A/300A 8HPSOF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 65A (Ta), 300A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 475µA
  • Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 4.3W (Ta), 198.4W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.57mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HPSOF
  • Package / Case: 8-PowerSFN
paquet: -
Stock5 580
MOSFET (Metal Oxide)
40 V
65A (Ta), 300A (Tc)
-
4V @ 475µA
185 nC @ 10 V
12600 pF @ 25 V
+20V, -16V
-
4.3W (Ta), 198.4W (Tc)
0.57mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-HPSOF
8-PowerSFN
RJK0352DSP-00-J0
Renesas Electronics Corporation

MOSFET N-CH 30V 18A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 10 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 5.6mOhm @ 9A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
paquet: -
Request a Quote
MOSFET (Metal Oxide)
30 V
18A (Ta)
-
-
16 nC @ 4.5 V
2440 pF @ 10 V
-
-
2W (Ta)
5.6mOhm @ 9A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
MSC015SMA070B
Microchip Technology

SICFET N-CH 700V 131A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
paquet: -
Stock1 299
SiCFET (Silicon Carbide)
700 V
131A (Tc)
20V
2.4V @ 1mA
215 nC @ 20 V
4500 pF @ 700 V
+25V, -10V
-
400W (Tc)
19mOhm @ 40A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
BSM180C12P2E202
Rohm Semiconductor

SICFET N-CH 1200V 204A MODULE

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 35.2mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 10 V
  • Vgs (Max): +22V, -6V
  • FET Feature: -
  • Power Dissipation (Max): 1360W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: Module
  • Package / Case: Module
paquet: -
Stock12
SiCFET (Silicon Carbide)
1200 V
204A (Tc)
-
4V @ 35.2mA
-
20000 pF @ 10 V
+22V, -6V
-
1360W (Tc)
-
175°C (TJ)
Chassis Mount
Module
Module
SIRA54ADP-T1-RE3
Vishay Siliconix

N-CHANNEL 40 V (D-S) MOSFET POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 36.2A (Ta), 128A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 20 V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
paquet: -
Stock18 000
MOSFET (Metal Oxide)
40 V
36.2A (Ta), 128A (Tc)
4.5V, 10V
2.5V @ 250µA
70 nC @ 10 V
3850 pF @ 20 V
+20V, -16V
-
5.2W (Ta), 65.7W (Tc)
2.2mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
IRLML2402GTRPBF-ML
MOSLEADER

N 20V SOT-23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
paquet: -
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PJD45P04_L2_00001
Panjit International Inc.

40V P-CHANNEL ENHANCEMENT MODE M

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 63W (Tc)
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Stock5 634
MOSFET (Metal Oxide)
40 V
8.5A (Ta), 45A (Tc)
4.5V, 10V
2.5V @ 250µA
19 nC @ 4.5 V
2030 pF @ 25 V
±20V
-
2W (Ta), 63W (Tc)
17mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
R6020YNX3C16
Rohm Semiconductor

NCH 600V 20A, TO-220AB, POWER MO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
  • Vgs(th) (Max) @ Id: 6V @ 1.65mA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 182W (Tc)
  • Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 12V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: -
Stock2 925
MOSFET (Metal Oxide)
600 V
20A (Tc)
10V, 12V
6V @ 1.65mA
28 nC @ 10 V
1200 pF @ 100 V
±30V
-
182W (Tc)
185mOhm @ 6A, 12V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
2SK1852-T-AZ
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
paquet: -
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SISS4410DN-T1-GE3
Vishay Siliconix

N-CHANNEL 40 V (D-S) MOSFET POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 20 V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8
  • Package / Case: PowerPAK® 1212-8
paquet: -
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MOSFET (Metal Oxide)
40 V
14A (Ta), 36A (Tc)
7.5V, 10V
2.4V @ 250µA
18 nC @ 10 V
850 pF @ 20 V
+20V, -16V
-
3.2W (Ta), 19.8W (Tc)
9mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
TW060N120C-S1F
Toshiba Semiconductor and Storage

G3 1200V SIC-MOSFET TO-247 60MO

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5V @ 4.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 800 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 78mOhm @ 18A, 18V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
paquet: -
Stock150
SiCFET (Silicon Carbide)
1200 V
36A (Tc)
18V
5V @ 4.2mA
46 nC @ 18 V
1530 pF @ 800 V
+25V, -10V
-
170W (Tc)
78mOhm @ 18A, 18V
175°C
Through Hole
TO-247
TO-247-3
TSM60NC390CH-C5G
Taiwan Semiconductor Corporation

600V, 11A, SINGLE N-CHANNEL POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 818 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251 (IPAK)
  • Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
paquet: -
Stock45 000
MOSFET (Metal Oxide)
600 V
11A (Tc)
10V
5V @ 1mA
21.4 nC @ 10 V
818 pF @ 100 V
±20V
-
125W (Tc)
390mOhm @ 3.8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-251 (IPAK)
TO-251-3 Short Leads, IPAK, TO-251AA
2SK1580-T1-A
Renesas Electronics Corporation

MOSFET N-CH 16V 100MA SC70-3 SSP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 16 V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1.6V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 3 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 10Ohm @ 1mA, 4V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-3, SSP, Miniature Mini Mold
  • Package / Case: SC-70, SOT-323
paquet: -
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MOSFET (Metal Oxide)
16 V
100mA (Tc)
-
1.6V @ 10µA
-
18 pF @ 3 V
-
-
-
10Ohm @ 1mA, 4V
-
Surface Mount
SC-70-3, SSP, Miniature Mini Mold
SC-70, SOT-323
TK25S06N1L-LXHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 25A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 36.8mOhm @ 12.5A, 4.5V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Stock10 815
MOSFET (Metal Oxide)
60 V
25A (Ta)
4.5V, 10V
2.5V @ 100µA
15 nC @ 10 V
855 pF @ 10 V
±20V
-
57W (Tc)
36.8mOhm @ 12.5A, 4.5V
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63