Page 75 - Produits Toshiba Semiconductor and Storage

Référence	Fabricant	Description	paquet	Stock
TK8Q60W,S1VQ	Toshiba Semiconductor and Storage	MOSFET N CH 600V 8A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 400µA Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 300V Vgs (Max): ±30V FET Feature: Super Junction Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Stub Leads, IPak	paquet: TO-251-3 Stub Leads, IPak	Stock3 216
TK14G65W5,RQ	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 13.7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 690µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock14 070
2SC2655-Y,T6SWFF(M	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	paquet: TO-226-3, TO-92-3 Long Body	Stock3 360
2SA1020-Y(F,M)	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	paquet: TO-226-3, TO-92-3 Long Body	Stock5 264
RN2402S,LF(D	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 0.2W S-MINI Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	paquet: TO-236-3, SC-59, SOT-23-3	Stock6 656
RN1107CT(TPL3)	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.05W CST3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 20V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 50mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	paquet: SC-101, SOT-883	Stock6 496
RN2301,LF	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 0.1W USM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	paquet: SC-70, SOT-323	Stock23 376
RN1970FE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2NPN PREBIAS 0.1W ES6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	paquet: SOT-563, SOT-666	Stock4 688
CRZ47(TE85L,Q)	Toshiba Semiconductor and Storage	DIODE ZENER 47V 700MW SFLAT Voltage - Zener (Nom) (Vz): 47V Tolerance: ±10% Power - Max: 700mW Impedance (Max) (Zzt): 65 Ohms Current - Reverse Leakage @ Vr: 10µA @ 37.6V Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5)	paquet: SOD-123F	Stock26 136
CLH03(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 3A L-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -	paquet: L-FLAT?	Stock3 392
1SS309(TE85L,F)	Toshiba Semiconductor and Storage	DIODE ARRAY GP 80V 100MA SMV Diode Configuration: 4 Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Operating Temperature - Junction: 125°C (Max) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	paquet: SC-74A, SOT-753	Stock6 880
TCR2EF31,LM	Toshiba Semiconductor and Storage	IC REG LINEAR 3.1V 200MA SMV Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3.1V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): 60µA PSRR: 73dB (1kHz) Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	paquet: SC-74A, SOT-753	Stock7 456
TBD62308AFAG,EHZ	Toshiba Semiconductor and Storage	IC LOAD SWITCH 24SSOP Switch Type: General Purpose Number of Outputs: 4 Ratio - Input:Output: 1:1 Output Configuration: Low Side Output Type: N-Channel Interface: On/Off Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.5A Rds On (Typ): 370 mOhm Input Type: Inverting Features: - Fault Protection: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 24-SOP (0.236", 6.00mm Width) Supplier Device Package: 24-SSOP	paquet: 24-SOP (0.236", 6.00mm Width)	Stock18 342
TC7SHU04FU5LJFT	Toshiba Semiconductor and Storage	IC INVERTER UNBUFFER HS SSOP5 Logic Type: Inverter Number of Circuits: 1 Number of Inputs: 1 Features: - Voltage - Supply: 2 V ~ 5.5 V Current - Quiescent (Max): 2µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.3V Logic Level - High: 1.7V Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: USV Package / Case: 5-TSSOP, SC-70-5, SOT-353	paquet: 5-TSSOP, SC-70-5, SOT-353	Stock5 072
TC7W08FU,LF	Toshiba Semiconductor and Storage	IC GATE AND 2CH 2-INP SM8 Logic Type: AND Gate Number of Circuits: 2 Number of Inputs: 2 Features: - Voltage - Supply: 2 V ~ 6 V Current - Quiescent (Max): 1µA Current - Output High, Low: 5.2mA, 5.2mA Logic Level - Low: 0.5 V ~ 1.8 V Logic Level - High: 1.5 V ~ 4.2 V Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: SM8 Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)	paquet: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)	Stock27 084
74LCX125FT(AE)	Toshiba Semiconductor and Storage	IC BUS BUFFER QDLV N-INV 14TSSOP Logic Type: Buffer, Non-Inverting Number of Elements: 4 Number of Bits per Element: 1 Input Type: - Output Type: Push-Pull Current - Output High, Low: 24mA, 24mA Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 14-TSSOP	paquet: 14-TSSOP (0.173", 4.40mm Width)	Stock3 632
74HC540D(BJ)	Toshiba Semiconductor and Storage	IC BUFFER INVERT 6V 20SOIC Logic Type: Buffer, Inverting Number of Elements: 1 Number of Bits per Element: 8 Input Type: - Output Type: Push-Pull Current - Output High, Low: 7.8mA, 7.8mA Voltage - Supply: 2 V ~ 6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Supplier Device Package: 20-SOIC	paquet: 20-SOIC (0.295", 7.50mm Width)	Stock22 776
TC7PCI3412MT,LF	Toshiba Semiconductor and Storage	IC MUX/DEMUX 2:1 DIFF PCI 42TQFN Applications: PCIe Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Number of Channels: 8 On-State Resistance (Max): 13.5 Ohm Voltage - Supply, Single (V+): 3 V ~ 3.6 V Voltage - Supply, Dual (V±): - -3db Bandwidth: 10GHz Features: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 42-UFQFN Exposed Pad Supplier Device Package: 42-TQFN (9x3.5)	paquet: 42-UFQFN Exposed Pad	Stock6 432
TL19W01-N(T32	Toshiba Semiconductor and Storage	LED COOL WHITE 5000K 65CRI 2SMD Color: White, Cool CCT (K): 5000K (4750K ~ 5300K) Flux @ 85°C, Current - Test: - Flux @ 25°C, Current - Test: 120 lm (100 lm ~ 140 lm) Current - Test: 300mA Voltage - Forward (Vf) (Typ): 3.3V Lumens/Watt @ Current - Test: 121 lm/W CRI (Color Rendering Index): 65 Current - Max: 350mA Viewing Angle: 140° Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: 3138 Size / Dimension: 0.150" L x 0.122" W (3.80mm x 3.10mm) Height - Seated (Max): 0.030" (0.75mm)	paquet: 2-SMD, No Lead	Stock4 698
TLP3555(TP1,F)	Toshiba Semiconductor and Storage	PHOTORELAY SPST-NO 2A 60V Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 200 mOhm Load Current: 2A Voltage - Input: 1.33VDC Voltage - Load: 0 ~ 60 V Mounting Type: Surface Mount Termination Style: Gull Wing Package / Case: 4-SMD (0.300", 7.62mm) Supplier Device Package: 4-SMD Relay Type: Relay	paquet: 4-SMD (0.300", 7.62mm)	Stock2 934
TLP281-4(GB-TP,J,F	Toshiba Semiconductor and Storage	OPTOISO 2.5KV 4CH TRANS 16-SOP Number of Channels: 4 Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 400mV Operating Temperature: -55°C ~ 100°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.173", 4.40mm Width) Supplier Device Package: 16-SOP	paquet: 16-SOIC (0.173", 4.40mm Width)	Stock8 838
TLP183(BL-TPL,E	Toshiba Semiconductor and Storage	OPTOISO 3.75KV TRANS 6-SO 4 LEAD Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 200% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Package / Case: 6-SMD (4 Leads), Gull Wing Supplier Device Package: 6-SO, 4 Lead	paquet: 6-SMD (4 Leads), Gull Wing	Stock7 290
TLP2200(TP1,F)	Toshiba Semiconductor and Storage	OPTOISO 2.5KV TRI-STATE 8SMD Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 2500Vrms Common Mode Transient Immunity (Min): 1kV/µs Input Type: DC Output Type: Tri-State Current - Output / Channel: 25mA Data Rate: 2.5MBd Propagation Delay tpLH / tpHL (Max): 400ns, 400ns Rise / Fall Time (Typ): 35ns, 20ns Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 10mA Voltage - Supply: 4.5 V ~ 20 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 8-SMD, Gull Wing Supplier Device Package: 8-SMD	paquet: 8-SMD, Gull Wing	Stock5 310
TLP351(F)	Toshiba Semiconductor and Storage	OPTOISO 3.75KV GATE DRIVER 8DIP Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 3750Vrms Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 700ns, 700ns Pulse Width Distortion (Max): - Rise / Fall Time (Typ): 50ns, 50ns Current - Output High, Low: 400mA, 400mA Current - Peak Output: 600mA Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 10 V ~ 30 V Operating Temperature: -40°C ~ 100°C Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP Approvals: -	paquet: 8-DIP (0.300", 7.62mm)	Stock15 312
TC78B025FTG,EL	Toshiba Semiconductor and Storage	BRUSHLESS MOTOR DRIVER IC FOR SE Motor Type - Stepper: - Motor Type - AC, DC: - Function: - Output Configuration: - Interface: - Technology: - Step Resolution: - Applications: - Current - Output: - Voltage - Supply: - Voltage - Load: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 24-VFQFN Exposed Pad Supplier Device Package: 24-VQFN (4x4)	paquet: 24-VFQFN Exposed Pad	Stock6 512
RN4989-TE85L-F	Toshiba Semiconductor and Storage	NPN + PNP BRT Q1BSR=47KOHM Q1BER Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	paquet: -	Stock594
SSM6P35AFE-LF	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 0.25A ES6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V Power - Max: 150mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	paquet: -	Stock23 136
TCR3UM11A-LF-SE	Toshiba Semiconductor and Storage	LDO REG IOUT: 300MA VIN: 6V VOUT Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.1V Voltage - Output (Max): - Voltage Dropout (Max): 0.957V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): 580 nA Current - Supply (Max): - PSRR: - Control Features: Current Limit, Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-UDFN Exposed Pad Supplier Device Package: 4-DFN (1x1)	paquet: -	Stock29 373

TK8Q60W,S1VQ

Toshiba Semiconductor and Storage

MOSFET N CH 600V 8A IPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.7V @ 400µA
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 300V
Vgs (Max): ±30V
FET Feature: Super Junction
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 500 mOhm @ 4A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I-Pak
Package / Case: TO-251-3 Stub Leads, IPak

paquet: TO-251-3 Stub Leads, IPak

Stock3 216

TK14G65W5,RQ

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 13.7A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 300V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.9A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock14 070

2SC2655-Y,T6SWFF(M

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

paquet: TO-226-3, TO-92-3 Long Body

Stock3 360

2SA1020-Y(F,M)

Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

paquet: TO-226-3, TO-92-3 Long Body

Stock5 264

RN2402S,LF(D

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.2W S-MINI

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

paquet: TO-236-3, SC-59, SOT-23-3

Stock6 656

RN1107CT(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.05W CST3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 50mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3

paquet: SC-101, SOT-883

Stock6 496

RN2301,LF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W USM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

paquet: SC-70, SOT-323

Stock23 376

RN1970FE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

paquet: SOT-563, SOT-666

Stock4 688

CRZ47(TE85L,Q)

Toshiba Semiconductor and Storage

DIODE ZENER 47V 700MW SFLAT

Voltage - Zener (Nom) (Vz): 47V
Tolerance: ±10%
Power - Max: 700mW
Impedance (Max) (Zzt): 65 Ohms
Current - Reverse Leakage @ Vr: 10µA @ 37.6V
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)

paquet: SOD-123F

Stock26 136

CLH03(TE16R,Q)

Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 3A L-FLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A (DC)
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: L-FLAT?
Supplier Device Package: L-FLAT? (4x5.5)
Operating Temperature - Junction: -

paquet: L-FLAT?

Stock3 392

1SS309(TE85L,F)

Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA SMV

Diode Configuration: 4 Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 500nA @ 80V
Operating Temperature - Junction: 125°C (Max)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

paquet: SC-74A, SOT-753

Stock6 880

TCR2EF31,LM

Toshiba Semiconductor and Storage

IC REG LINEAR 3.1V 200MA SMV

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 3.1V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): 60µA
PSRR: 73dB (1kHz)
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

paquet: SC-74A, SOT-753

Stock7 456

TBD62308AFAG,EHZ

Toshiba Semiconductor and Storage

IC LOAD SWITCH 24SSOP

Switch Type: General Purpose
Number of Outputs: 4
Ratio - Input:Output: 1:1
Output Configuration: Low Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Rds On (Typ): 370 mOhm
Input Type: Inverting
Features: -
Fault Protection: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 24-SOP (0.236", 6.00mm Width)
Supplier Device Package: 24-SSOP

paquet: 24-SOP (0.236", 6.00mm Width)

Stock18 342

TC7SHU04FU5LJFT

Toshiba Semiconductor and Storage

IC INVERTER UNBUFFER HS SSOP5

Logic Type: Inverter
Number of Circuits: 1
Number of Inputs: 1
Features: -
Voltage - Supply: 2 V ~ 5.5 V
Current - Quiescent (Max): 2µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.3V
Logic Level - High: 1.7V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: USV
Package / Case: 5-TSSOP, SC-70-5, SOT-353

paquet: 5-TSSOP, SC-70-5, SOT-353

Stock5 072

TC7W08FU,LF

Toshiba Semiconductor and Storage

IC GATE AND 2CH 2-INP SM8

Logic Type: AND Gate
Number of Circuits: 2
Number of Inputs: 2
Features: -
Voltage - Supply: 2 V ~ 6 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 5.2mA, 5.2mA
Logic Level - Low: 0.5 V ~ 1.8 V
Logic Level - High: 1.5 V ~ 4.2 V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: SM8
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

paquet: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

Stock27 084

74LCX125FT(AE)

Toshiba Semiconductor and Storage

IC BUS BUFFER QDLV N-INV 14TSSOP

Logic Type: Buffer, Non-Inverting
Number of Elements: 4
Number of Bits per Element: 1
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 14-TSSOP

paquet: 14-TSSOP (0.173", 4.40mm Width)

Stock3 632

74HC540D(BJ)

Toshiba Semiconductor and Storage

IC BUFFER INVERT 6V 20SOIC

Logic Type: Buffer, Inverting
Number of Elements: 1
Number of Bits per Element: 8
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 7.8mA, 7.8mA
Voltage - Supply: 2 V ~ 6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 20-SOIC

paquet: 20-SOIC (0.295", 7.50mm Width)

Stock22 776

TC7PCI3412MT,LF

Toshiba Semiconductor and Storage

IC MUX/DEMUX 2:1 DIFF PCI 42TQFN

Applications: PCIe
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Number of Channels: 8
On-State Resistance (Max): 13.5 Ohm
Voltage - Supply, Single (V+): 3 V ~ 3.6 V
Voltage - Supply, Dual (V±): -
-3db Bandwidth: 10GHz
Features: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 42-UFQFN Exposed Pad
Supplier Device Package: 42-TQFN (9x3.5)

paquet: 42-UFQFN Exposed Pad

Stock6 432

TL19W01-N(T32

Toshiba Semiconductor and Storage

LED COOL WHITE 5000K 65CRI 2SMD

Color: White, Cool
CCT (K): 5000K (4750K ~ 5300K)
Flux @ 85°C, Current - Test: -
Flux @ 25°C, Current - Test: 120 lm (100 lm ~ 140 lm)
Current - Test: 300mA
Voltage - Forward (Vf) (Typ): 3.3V
Lumens/Watt @ Current - Test: 121 lm/W
CRI (Color Rendering Index): 65
Current - Max: 350mA
Viewing Angle: 140°
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: 3138
Size / Dimension: 0.150" L x 0.122" W (3.80mm x 3.10mm)
Height - Seated (Max): 0.030" (0.75mm)

paquet: 2-SMD, No Lead

Stock4 698

TLP3555(TP1,F)

Toshiba Semiconductor and Storage

PHOTORELAY SPST-NO 2A 60V

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 200 mOhm
Load Current: 2A
Voltage - Input: 1.33VDC
Voltage - Load: 0 ~ 60 V
Mounting Type: Surface Mount
Termination Style: Gull Wing
Package / Case: 4-SMD (0.300", 7.62mm)
Supplier Device Package: 4-SMD
Relay Type: Relay

paquet: 4-SMD (0.300", 7.62mm)

Stock2 934

TLP281-4(GB-TP,J,F

Toshiba Semiconductor and Storage

OPTOISO 2.5KV 4CH TRANS 16-SOP

Number of Channels: 4
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Current Transfer Ratio (Max): 600% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.15V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 400mV
Operating Temperature: -55°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 16-SOP

paquet: 16-SOIC (0.173", 4.40mm Width)

Stock8 838

TLP183(BL-TPL,E

Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

Number of Channels: 1
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Current Transfer Ratio (Max): 600% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SMD (4 Leads), Gull Wing
Supplier Device Package: 6-SO, 4 Lead

paquet: 6-SMD (4 Leads), Gull Wing

Stock7 290

TLP2200(TP1,F)

Toshiba Semiconductor and Storage

OPTOISO 2.5KV TRI-STATE 8SMD

Number of Channels: 1
Inputs - Side 1/Side 2: 1/0
Voltage - Isolation: 2500Vrms
Common Mode Transient Immunity (Min): 1kV/µs
Input Type: DC
Output Type: Tri-State
Current - Output / Channel: 25mA
Data Rate: 2.5MBd
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Rise / Fall Time (Typ): 35ns, 20ns
Voltage - Forward (Vf) (Typ): 1.55V
Current - DC Forward (If) (Max): 10mA
Voltage - Supply: 4.5 V ~ 20 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Supplier Device Package: 8-SMD

paquet: 8-SMD, Gull Wing

Stock5 310

TLP351(F)

Toshiba Semiconductor and Storage

OPTOISO 3.75KV GATE DRIVER 8DIP

Technology: Optical Coupling
Number of Channels: 1
Voltage - Isolation: 3750Vrms
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): -
Rise / Fall Time (Typ): 50ns, 50ns
Current - Output High, Low: 400mA, 400mA
Current - Peak Output: 600mA
Voltage - Forward (Vf) (Typ): 1.55V
Current - DC Forward (If) (Max): 20mA
Voltage - Supply: 10 V ~ 30 V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP
Approvals: -

paquet: 8-DIP (0.300", 7.62mm)

Stock15 312

TC78B025FTG,EL

Toshiba Semiconductor and Storage

BRUSHLESS MOTOR DRIVER IC FOR SE

Motor Type - Stepper: -
Motor Type - AC, DC: -
Function: -
Output Configuration: -
Interface: -
Technology: -
Step Resolution: -
Applications: -
Current - Output: -
Voltage - Supply: -
Voltage - Load: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 24-VFQFN Exposed Pad
Supplier Device Package: 24-VQFN (4x4)

paquet: 24-VFQFN Exposed Pad

Stock6 512

RN4989-TE85L-F

Toshiba Semiconductor and Storage

NPN + PNP BRT Q1BSR=47KOHM Q1BER

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47kOhms
Resistor - Emitter Base (R2) (Ohms): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz, 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

paquet: -

Stock594

SSM6P35AFE-LF

Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.25A ES6

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V
Power - Max: 150mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

paquet: -

Stock23 136

TCR3UM11A-LF-SE

Toshiba Semiconductor and Storage

LDO REG IOUT: 300MA VIN: 6V VOUT

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.1V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.957V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): 580 nA
Current - Supply (Max): -
PSRR: -
Control Features: Current Limit, Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-UDFN Exposed Pad
Supplier Device Package: 4-DFN (1x1)

paquet: -

Stock29 373