Produits Toshiba Semiconductor and Storage

2SK3662(F)

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 35A TO220NIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 35W (Tc)
• Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 18A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220NIS
• Package / Case: TO-220-3 Full Pack

paquet: TO-220-3 Full Pack

TK32A12N1,S4X

Toshiba Semiconductor and Storage

MOSFET N-CH 120V 32A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 120V
• Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 60V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 30W (Tc)
• Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 16A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack, Isolated Tab

paquet: TO-220-3 Full Pack, Isolated Tab

TK34E10N1,S1X

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 75A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 103W (Tc)
• Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 17A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

paquet: TO-220-3

SSM3K16FU,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 0.1A USM

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
• Vgs(th) (Max) @ Id: 1.1V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 150mW (Ta)
• Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: USM
• Package / Case: SC-70, SOT-323

paquet: SC-70, SOT-323

TPCF8201(TE85L,F,M

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 3A VS-8

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 3A
• Rds On (Max) @ Id, Vgs: 49 mOhm @ 1.5A, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V
• Power - Max: 330mW
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: VS-8 (2.9x1.5)

paquet: 8-SMD, Flat Lead

2SA1869-Y,Q(J

Toshiba Semiconductor and Storage

TRANS PNP 3A 50V TO220-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
• Power - Max: 10W
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220NIS

paquet: TO-220-3 Full Pack

2SC2713-BL,LF

Toshiba Semiconductor and Storage

TRANS NPN 120V 0.1A S-MINI

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 120V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
• Power - Max: 150mW
• Frequency - Transition: 100MHz
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236

paquet: TO-236-3, SC-59, SOT-23-3

RN2104(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W SSM

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SSM

paquet: SC-75, SOT-416

RN1906FE,LF(CT

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

paquet: SOT-563, SOT-666

RN2907FE,LF(CB

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

paquet: SOT-563, SOT-666

CLS01(TE16L,PAS,Q)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 10A L-FLAT

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 10A (DC)
• Voltage - Forward (Vf) (Max) @ If: 0.47V @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 30V
• Capacitance @ Vr, F: 530pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: L-FLAT?
• Supplier Device Package: L-FLAT? (4x5.5)
• Operating Temperature - Junction: -40°C ~ 125°C

paquet: L-FLAT?

TA76L431S,Q(J

Toshiba Semiconductor and Storage

IC REG LINEAR 0.5MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 0.5mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: LSTM

paquet: TO-226-3, TO-92-3 Long Body

TB62781FNG,C8,EL

Toshiba Semiconductor and Storage

IC LED DRVR LIN DIM 40MA 20SSOP

• Type: Linear
• Topology: -
• Internal Switch(s): Yes
• Number of Outputs: 9
• Voltage - Supply (Min): 3V
• Voltage - Supply (Max): 5.5V
• Voltage - Output: 28V
• Current - Output / Channel: 40mA
• Frequency: -
• Dimming: -
• Applications: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-LSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-SSOP

paquet: 20-LSSOP (0.173", 4.40mm Width)

TC74VHCT240AFTEL

Toshiba Semiconductor and Storage

IC INVERTER DUAL 4-INPUT 20TSSOP

• Logic Type: Buffer, Inverting
• Number of Elements: 2
• Number of Bits per Element: 4
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-TSSOP

paquet: 20-TSSOP (0.173", 4.40mm Width)

TC74VHC541F(EL,K,F

Toshiba Semiconductor and Storage

IC BUFF/DVR TRI-ST 8BIT 20SOP

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 8
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.209", 5.30mm Width)
• Supplier Device Package: 20-SOP

paquet: 20-SOIC (0.209", 5.30mm Width)

TC74VHC245FK(EL,K)

Toshiba Semiconductor and Storage

IC BUS TRANSCVR 8BIT 20VSSOP

• Logic Type: Transceiver, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 8
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-VFSOP (0.118", 3.00mm Width)
• Supplier Device Package: 20-VSSOP

paquet: 20-VFSOP (0.118", 3.00mm Width)

TL1L4-DW0,L4A5B

Toshiba Semiconductor and Storage

POWER LED WHT 6500K 3535

• Color: White, Cool
• CCT (K): 6500K
• Flux @ 85°C, Current - Test: 150 lm (140 lm ~ 160 lm)
• Flux @ 25°C, Current - Test: -
• Current - Test: 350mA
• Voltage - Forward (Vf) (Typ): 2.8V
• Lumens/Watt @ Current - Test: 153 lm/W
• CRI (Color Rendering Index): 70
• Current - Max: 1.5A
• Viewing Angle: 120°
• Mounting Type: Surface Mount
• Package / Case: 1414 (3535 Metric)
• Supplier Device Package: 3535
• Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
• Height - Seated (Max): 0.085" (2.15mm)

paquet: 1414 (3535 Metric)

TLP124F

Toshiba Semiconductor and Storage

OPTOISOLTR 3.75KV TRANS 6-MFSOP

• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 100% @ 1mA
• Current Transfer Ratio (Max): 1200% @ 1mA
• Turn On / Turn Off Time (Typ): 10µs, 8µs
• Rise / Fall Time (Typ): 8µs, 8µs
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.15V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 400mV
• Operating Temperature: -55°C ~ 100°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD (4 Leads), Gull Wing
• Supplier Device Package: 6-MFSOP, 4 Lead

paquet: 6-SMD (4 Leads), Gull Wing

TLP184(GR-TPL,SE

Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 100% @ 5mA
• Current Transfer Ratio (Max): 300% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: AC, DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD (4 Leads), Gull Wing
• Supplier Device Package: 6-SO, 4 Lead

paquet: 6-SMD (4 Leads), Gull Wing

TLP5214(TP,E

Toshiba Semiconductor and Storage

OPTOISO 5KV GATE DRIVER 16SO

• Technology: Optical Coupling
• Number of Channels: 1
• Voltage - Isolation: 5000Vrms
• Common Mode Transient Immunity (Min): 35kV/µs
• Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
• Pulse Width Distortion (Max): 50ns
• Rise / Fall Time (Typ): 32ns, 18ns
• Current - Output High, Low: 3A, 3A
• Current - Peak Output: 4A
• Voltage - Forward (Vf) (Typ): 1.7V (Max)
• Current - DC Forward (If) (Max): 25mA
• Voltage - Supply: 15 V ~ 30 V
• Operating Temperature: -40°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 16-SO
• Approvals: CQC, CSA, cUL, UL

paquet: 16-SOIC (0.295", 7.50mm Width)

TB62210FNG,C8,EL

Toshiba Semiconductor and Storage

STEPPER MOTOR DRIVER IC, 40V/1.0

• Motor Type - Stepper: -
• Motor Type - AC, DC: -
• Function: -
• Output Configuration: -
• Interface: -
• Technology: -
• Step Resolution: -
• Applications: -
• Current - Output: -
• Voltage - Supply: -
• Voltage - Load: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

paquet: -

TB6674FAG,8,EL

Toshiba Semiconductor and Storage

STEPPING MOTOR DRIVER IC 24V/0.4

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: -
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: Parallel
• Technology: Power MOSFET
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 100mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Voltage - Load: 2.7 V ~ 22 V
• Operating Temperature: -30°C ~ 75°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-SOP (0.181", 4.60mm Width)
• Supplier Device Package: 16-SSOP

paquet: 16-SOP (0.181", 4.60mm Width)

TCR3DF29,LM(CT

Toshiba Semiconductor and Storage

300MA LDO VOUT=2.9V DROPOUT=230M

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 2.9V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.27V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Inrush Current, Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

paquet: SC-74A, SOT-753

TCR2DG14-LF

Toshiba Semiconductor and Storage

LOW DROPOUT (LDO) IOUT: 200MA PD

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.4V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.6V @ 100mA
• Current - Output: 200mA
• Current - Quiescent (Iq): 70 µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-UFBGA, WLCSP
• Supplier Device Package: 4-WCSP (0.79x0.79)

paquet: -

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TCKE812NA-RF

Toshiba Semiconductor and Storage

IC ELECTRONIC FUSE 10WSON

• Function: Electronic Fuse
• Sensing Method: -
• Accuracy: -
• Voltage - Input: 4.4V ~ 18V
• Current - Output: 5A
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 10-WFDFN Exposed Pad
• Supplier Device Package: 10-WSONB (3x3)

paquet: -

TCTH012BE-LF-CT

Toshiba Semiconductor and Storage

CMOS LINEAR IC OVER TEMP DETECTI

• Type: Thermal
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: -
• Reset Timeout: 17µs Typical
• Voltage - Threshold: 0.5V
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-553
• Supplier Device Package: ESV

paquet: -

RN1710-LF

Toshiba Semiconductor and Storage

NPNX2 BRT Q1BSR4.7KOHM Q1BERINF.

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7kOhms
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: USV

paquet: -

TC7W02F-TE12L

Toshiba Semiconductor and Storage

IC GATE NOR 2CH 2-INP 8-SOP

• Logic Type: NOR Gate
• Number of Circuits: 2
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2V ~ 6V
• Current - Quiescent (Max): 1 µA
• Current - Output High, Low: 5.2mA, 5.2mA
• Logic Level - Low: 0.5V ~ 1.8V
• Logic Level - High: 1.5V ~ 4.2V
• Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP
• Package / Case: 8-SOIC (0.122", 3.10mm Width)

paquet: -

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