Page 33 - Produits Toshiba Semiconductor and Storage

Référence	Fabricant	Description	paquet	Stock
RN2108CT(TPL3)	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 0.05W CST3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 20V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 50mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	paquet: SC-101, SOT-883	Stock2 304
2SC5086-Y,LF	Toshiba Semiconductor and Storage	TRANS RF NPN 12V 1MHZ SSM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Gain: - Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	paquet: SC-75, SOT-416	Stock5 008
HN1B04FU-Y(T5L,F,T	Toshiba Semiconductor and Storage	TRANS NPN/PNP 50V 0.15A US6 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 150MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	paquet: 6-TSSOP, SC-88, SOT-363	Stock7 728
RN2911(T5L,F,T)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.2W US6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	paquet: 6-TSSOP, SC-88, SOT-363	Stock3 440
RN2902,LF(CT	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.2W US6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	paquet: 6-TSSOP, SC-88, SOT-363	Stock46 284
CRG02(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 700MA SFLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 700mA Voltage - Forward (Vf) (Max) @ If: 1.1V @ 700mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C	paquet: SOD-123F	Stock36 000
TAR5SB30(TE85L,F)	Toshiba Semiconductor and Storage	IC REG LINEAR 3V 200MA SMV Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 15V Voltage - Output (Min/Fixed): 3V Voltage - Output (Max): - Voltage Dropout (Max): 0.2V @ 50mA Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): 850µA PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	paquet: SC-74A, SOT-753	Stock4 240
TBD62003AFNG,EL	Toshiba Semiconductor and Storage	IC LOAD SWITCH 7CH 0.5A 16SSOP Switch Type: General Purpose Number of Outputs: 7 Ratio - Input:Output: 1:1 Output Configuration: Low Side Output Type: N-Channel Interface: On/Off Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.8A Rds On (Typ): - Input Type: Inverting Features: - Fault Protection: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-LSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-SSOP	paquet: 16-LSSOP (0.173", 4.40mm Width)	Stock15 816
TCK22892G,LF	Toshiba Semiconductor and Storage	IC PWR SWITCH P-CHAN 1:1 WCSP6E Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: P-Channel Interface: On/Off Voltage - Load: 1.4 V ~ 5.5 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 740mA Rds On (Typ): 31 mOhm Input Type: Non-Inverting Features: Load Discharge Fault Protection: Current Limiting (Fixed), Over Temperature Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 6-UFBGA, WLCSP Supplier Device Package: 6-WCSPE (0.80x1.2)	paquet: 6-UFBGA, WLCSP	Stock49 446
TB6600HG	Toshiba Semiconductor and Storage	IC MOTOR DRIVER BIPOLAR 25HZIP Motor Type - Stepper: Bipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: Power MOSFET Step Resolution: 1, 1/2, 1/4, 1/8, 1/16 Applications: General Purpose Current - Output: 4.5A Voltage - Supply: 8 V ~ 42 V Voltage - Load: 8 V ~ 42 V Operating Temperature: -30°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 25-SIP, Formed Leads Supplier Device Package: 25-HZIP	paquet: 25-SIP, Formed Leads	Stock5 888
TC7MB3125CFK-EL(M)	Toshiba Semiconductor and Storage	IC BUS SWITCH LOCAP QUAD 14VSSOP Type: Bus Switch Circuit: 1 x 1:1 Independent Circuits: 4 Current - Output High, Low: - Voltage Supply Source: Single Supply Voltage - Supply: 4 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 14-VFSOP (0.118", 3.00mm Width) Supplier Device Package: 14-VSSOP, US14	paquet: 14-VFSOP (0.118", 3.00mm Width)	Stock6 640
74HC164D(BJ)	Toshiba Semiconductor and Storage	IC SHIFT REGISTER 8BIT 14SOP Logic Type: Shift Register Output Type: Push-Pull Number of Elements: 1 Number of Bits per Element: 8 Function: Serial to Parallel Voltage - Supply: 2 V ~ 6 V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOP	paquet: 14-SOIC (0.154", 3.90mm Width)	Stock21 552
74VHC14FT	Toshiba Semiconductor and Storage	IC INV HEX SCHMITT TRIG 14TSSOP Logic Type: Inverter Number of Circuits: 6 Number of Inputs: 6 Features: Schmitt Trigger Voltage - Supply: 2 V ~ 5.5 V Current - Quiescent (Max): 2µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.9 V ~ 1.65 V Logic Level - High: 2.2 V ~ 3.85 V Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: 14-TSSOP Package / Case: 14-TSSOP (0.173", 4.40mm Width)	paquet: 14-TSSOP (0.173", 4.40mm Width)	Stock18 012
TC7SH00F,LJ(CT	Toshiba Semiconductor and Storage	IC GATE NAND 1CH 2-INP SMV Logic Type: NAND Gate Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 2 V ~ 5.5 V Current - Quiescent (Max): 2µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.5V Logic Level - High: 1.5V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: SMV Package / Case: SC-74A, SOT-753	paquet: SC-74A, SOT-753	Stock45 378
TD62083AFG,N	Toshiba Semiconductor and Storage	IC DRIVER DARL SINK 8CHAN 18SOP Type: Driver Protocol: - Number of Drivers/Receivers: 8/0 Duplex: - Receiver Hysteresis: - Data Rate: - Voltage - Supply: 5V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 18-SOIC (0.276", 7.00mm Width) Supplier Device Package: 18-SOP	paquet: 18-SOIC (0.276", 7.00mm Width)	Stock2 336
74HCT4053D(BJ)	Toshiba Semiconductor and Storage	IC SERIES TRIPLE 2-CHANNEL Switch Circuit: - Multiplexer/Demultiplexer Circuit: - Number of Circuits: - On-State Resistance (Max): - Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): - Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): - -3db Bandwidth: - Charge Injection: - Channel Capacitance (CS(off), CD(off)): - Current - Leakage (IS(off)) (Max): - Crosstalk: - Operating Temperature: - Package / Case: - Supplier Device Package: -	paquet: -	Stock42 342
TLP222G-2(F)	Toshiba Semiconductor and Storage	PHOTOCOUPLER PHOTORELAY 8-DIP Circuit: DPST (2 Form A) Output Type: AC, DC On-State Resistance (Max): 50 Ohm Load Current: 120mA Voltage - Input: 1.15VDC Voltage - Load: 0 ~ 350 V Mounting Type: Through Hole Termination Style: PC Pin Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP Relay Type: Relay	paquet: 8-DIP (0.300", 7.62mm)	Stock6 156
TLP184(Y-TPL,SE	Toshiba Semiconductor and Storage	OPTOISO 3.75KV TRANS 6-SO 4 LEAD Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Current Transfer Ratio (Max): 150% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Package / Case: 6-SMD (4 Leads), Gull Wing Supplier Device Package: 6-SO, 4 Lead	paquet: 6-SMD (4 Leads), Gull Wing	Stock8 856
TLP250(TP1,F)	Toshiba Semiconductor and Storage	OPTOISO 2.5KV GATE DRIVER 8SMD Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 2500Vrms Common Mode Transient Immunity (Min): 5kV/µs Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Pulse Width Distortion (Max): - Rise / Fall Time (Typ): - Current - Output High, Low: 500mA, 500mA Current - Peak Output: 1.5A Voltage - Forward (Vf) (Typ): 1.6V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 15 V ~ 30 V Operating Temperature: -20°C ~ 85°C Mounting Type: Surface Mount Package / Case: 8-SMD, Gull Wing Supplier Device Package: 8-SMD Approvals: UR	paquet: 8-SMD, Gull Wing	Stock95 598
74VHC240FT	Toshiba Semiconductor and Storage	IC BUFFER INVERT 5.5V 20TSSOP Logic Type: Buffer, Inverting Number of Elements: 2 Number of Bits per Element: 4 Input Type: - Output Type: 3-State Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOP	paquet: 20-TSSOP (0.173", 4.40mm Width)	Stock2 848
TC74VHC32FK(EL,K)	Toshiba Semiconductor and Storage	X34 OR GATE VCC: 2-5.5V Logic Type: OR Gate Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 2V ~ 5.5V Current - Quiescent (Max): 2µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.1V ~ 36V Logic Level - High: 2V ~ 4.5V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-VSSOP Package / Case: 14-VFSOP (0.118", 3.00mm Width)	paquet: 14-VFSOP (0.118", 3.00mm Width)	Stock20 154
TCR15AG10,LF	Toshiba Semiconductor and Storage	1500MA LDO VOUT1.0V DROPOUT120MV Output Configuration: - Output Type: - Number of Regulators: - Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: - Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	paquet: -	Stock3 168
TMPM4G9F15FG(DBB)	Toshiba Semiconductor and Storage	TXZ FAMILY MCU Core Processor: ARM® Cortex®-M4F Core Size: 32-Bit Speed: 160MHz Connectivity: CEC, EBI/EMI, I²C, IrDA, SIO, SPI, SMIF, UART/USART Peripherals: DMA, LVD, POR, WDT Number of I/O: 150 Program Memory Size: 1.5MB (1.5M x 8) Program Memory Type: FLASH EEPROM Size: 32K x 8 RAM Size: 192K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V Data Converters: A/D 24x12b; D/A 2x8b Oscillator Type: Internal Operating Temperature: -40°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x14)	paquet: 100-LQFP	Stock7 360
TPH2R805PL-LQ	Toshiba Semiconductor and Storage	PB-F POWER MOSFET TRANSISTOR SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5175 pF @ 22.5 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830mW (Ta), 116W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	paquet: -	Stock8 940
RN4911-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q TR PNP+NPN BRT Q1BSR= Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz, 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	paquet: -	Stock18 000
TRS2E65F-S1Q	Toshiba Semiconductor and Storage	DIODE SIL CARB 650V 2A TO220-2L Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 20 µA @ 650 V Capacitance @ Vr, F: 8.7pF @ 650V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: 175°C (Max)	paquet: -	Request a Quote
TCR3DM105-LF-SE	Toshiba Semiconductor and Storage	LDO REG IOUT: 300MA VIN: 6V VOUT Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.05V Voltage - Output (Max): - Voltage Dropout (Max): 0.75V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-UDFN Exposed Pad Supplier Device Package: 4-DFN (1x1)	paquet: -	Stock29 484
XPN12006NC-L1XHQ	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 20A 8TSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 20A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance-WF (3.1x3.1) Package / Case: 8-PowerVDFN	paquet: -	Stock29 856

RN2108CT(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.05W CST3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 50mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3

paquet: SC-101, SOT-883

Stock2 304

2SC5086-Y,LF

Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1MHZ SSM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Gain: -
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

paquet: SC-75, SOT-416

Stock5 008

HN1B04FU-Y(T5L,F,T

Toshiba Semiconductor and Storage

TRANS NPN/PNP 50V 0.15A US6

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 200mW
Frequency - Transition: 150MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

paquet: 6-TSSOP, SC-88, SOT-363

Stock7 728

RN2911(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

paquet: 6-TSSOP, SC-88, SOT-363

Stock3 440

RN2902,LF(CT

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

paquet: 6-TSSOP, SC-88, SOT-363

Stock46 284

CRG02(TE85L,Q,M)

Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 700MA SFLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 700mA
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 700mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C

paquet: SOD-123F

Stock36 000

TAR5SB30(TE85L,F)

Toshiba Semiconductor and Storage

IC REG LINEAR 3V 200MA SMV

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 15V
Voltage - Output (Min/Fixed): 3V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.2V @ 50mA
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): 850µA
PSRR: 70dB (1kHz)
Control Features: Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

paquet: SC-74A, SOT-753

Stock4 240

TBD62003AFNG,EL

Toshiba Semiconductor and Storage

IC LOAD SWITCH 7CH 0.5A 16SSOP

Switch Type: General Purpose
Number of Outputs: 7
Ratio - Input:Output: 1:1
Output Configuration: Low Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.8A
Rds On (Typ): -
Input Type: Inverting
Features: -
Fault Protection: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-SSOP

paquet: 16-LSSOP (0.173", 4.40mm Width)

Stock15 816

TCK22892G,LF

Toshiba Semiconductor and Storage

IC PWR SWITCH P-CHAN 1:1 WCSP6E

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: P-Channel
Interface: On/Off
Voltage - Load: 1.4 V ~ 5.5 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 740mA
Rds On (Typ): 31 mOhm
Input Type: Non-Inverting
Features: Load Discharge
Fault Protection: Current Limiting (Fixed), Over Temperature
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 6-UFBGA, WLCSP
Supplier Device Package: 6-WCSPE (0.80x1.2)

paquet: 6-UFBGA, WLCSP

Stock49 446

TB6600HG

Toshiba Semiconductor and Storage

IC MOTOR DRIVER BIPOLAR 25HZIP

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: Parallel
Technology: Power MOSFET
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16
Applications: General Purpose
Current - Output: 4.5A
Voltage - Supply: 8 V ~ 42 V
Voltage - Load: 8 V ~ 42 V
Operating Temperature: -30°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 25-SIP, Formed Leads
Supplier Device Package: 25-HZIP

paquet: 25-SIP, Formed Leads

Stock5 888

TC7MB3125CFK-EL(M)

Toshiba Semiconductor and Storage

IC BUS SWITCH LOCAP QUAD 14VSSOP

Type: Bus Switch
Circuit: 1 x 1:1
Independent Circuits: 4
Current - Output High, Low: -
Voltage Supply Source: Single Supply
Voltage - Supply: 4 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Supplier Device Package: 14-VSSOP, US14

paquet: 14-VFSOP (0.118", 3.00mm Width)

Stock6 640

74HC164D(BJ)

Toshiba Semiconductor and Storage

IC SHIFT REGISTER 8BIT 14SOP

Logic Type: Shift Register
Output Type: Push-Pull
Number of Elements: 1
Number of Bits per Element: 8
Function: Serial to Parallel
Voltage - Supply: 2 V ~ 6 V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SOP

paquet: 14-SOIC (0.154", 3.90mm Width)

Stock21 552

74VHC14FT

Toshiba Semiconductor and Storage

IC INV HEX SCHMITT TRIG 14TSSOP

Logic Type: Inverter
Number of Circuits: 6
Number of Inputs: 6
Features: Schmitt Trigger
Voltage - Supply: 2 V ~ 5.5 V
Current - Quiescent (Max): 2µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.9 V ~ 1.65 V
Logic Level - High: 2.2 V ~ 3.85 V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: 14-TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)

paquet: 14-TSSOP (0.173", 4.40mm Width)

Stock18 012

TC7SH00F,LJ(CT

Toshiba Semiconductor and Storage

IC GATE NAND 1CH 2-INP SMV

Logic Type: NAND Gate
Number of Circuits: 1
Number of Inputs: 2
Features: -
Voltage - Supply: 2 V ~ 5.5 V
Current - Quiescent (Max): 2µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.5V
Logic Level - High: 1.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: SMV
Package / Case: SC-74A, SOT-753

paquet: SC-74A, SOT-753

Stock45 378

TD62083AFG,N

Toshiba Semiconductor and Storage

IC DRIVER DARL SINK 8CHAN 18SOP

Type: Driver
Protocol: -
Number of Drivers/Receivers: 8/0
Duplex: -
Receiver Hysteresis: -
Data Rate: -
Voltage - Supply: 5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 18-SOIC (0.276", 7.00mm Width)
Supplier Device Package: 18-SOP

paquet: 18-SOIC (0.276", 7.00mm Width)

Stock2 336

74HCT4053D(BJ)

Toshiba Semiconductor and Storage

IC SERIES TRIPLE 2-CHANNEL

Switch Circuit: -
Multiplexer/Demultiplexer Circuit: -
Number of Circuits: -
On-State Resistance (Max): -
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): -
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): -
-3db Bandwidth: -
Charge Injection: -
Channel Capacitance (CS(off), CD(off)): -
Current - Leakage (IS(off)) (Max): -
Crosstalk: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

paquet: -

Stock42 342

TLP222G-2(F)

Toshiba Semiconductor and Storage

PHOTOCOUPLER PHOTORELAY 8-DIP

Circuit: DPST (2 Form A)
Output Type: AC, DC
On-State Resistance (Max): 50 Ohm
Load Current: 120mA
Voltage - Input: 1.15VDC
Voltage - Load: 0 ~ 350 V
Mounting Type: Through Hole
Termination Style: PC Pin
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP
Relay Type: Relay

paquet: 8-DIP (0.300", 7.62mm)

Stock6 156

TLP184(Y-TPL,SE

Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

Number of Channels: 1
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Current Transfer Ratio (Max): 150% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: AC, DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 6-SMD (4 Leads), Gull Wing
Supplier Device Package: 6-SO, 4 Lead

paquet: 6-SMD (4 Leads), Gull Wing

Stock8 856

TLP250(TP1,F)

Toshiba Semiconductor and Storage

OPTOISO 2.5KV GATE DRIVER 8SMD

Technology: Optical Coupling
Number of Channels: 1
Voltage - Isolation: 2500Vrms
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): -
Rise / Fall Time (Typ): -
Current - Output High, Low: 500mA, 500mA
Current - Peak Output: 1.5A
Voltage - Forward (Vf) (Typ): 1.6V
Current - DC Forward (If) (Max): 20mA
Voltage - Supply: 15 V ~ 30 V
Operating Temperature: -20°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Supplier Device Package: 8-SMD
Approvals: UR

paquet: 8-SMD, Gull Wing

Stock95 598

74VHC240FT

Toshiba Semiconductor and Storage

IC BUFFER INVERT 5.5V 20TSSOP

Logic Type: Buffer, Inverting
Number of Elements: 2
Number of Bits per Element: 4
Input Type: -
Output Type: 3-State
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOP

paquet: 20-TSSOP (0.173", 4.40mm Width)

Stock2 848

TC74VHC32FK(EL,K)

Toshiba Semiconductor and Storage

X34 OR GATE VCC: 2-5.5V

Logic Type: OR Gate
Number of Circuits: 4
Number of Inputs: 2
Features: -
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Max): 2µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.1V ~ 36V
Logic Level - High: 2V ~ 4.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-VSSOP
Package / Case: 14-VFSOP (0.118", 3.00mm Width)

paquet: 14-VFSOP (0.118", 3.00mm Width)

Stock20 154

TCR15AG10,LF

Toshiba Semiconductor and Storage

1500MA LDO VOUT1.0V DROPOUT120MV

Output Configuration: -
Output Type: -
Number of Regulators: -
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: -
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

paquet: -

Stock3 168

TMPM4G9F15FG(DBB)

Toshiba Semiconductor and Storage

TXZ FAMILY MCU

Core Processor: ARM® Cortex®-M4F
Core Size: 32-Bit
Speed: 160MHz
Connectivity: CEC, EBI/EMI, I²C, IrDA, SIO, SPI, SMIF, UART/USART
Peripherals: DMA, LVD, POR, WDT
Number of I/O: 150
Program Memory Size: 1.5MB (1.5M x 8)
Program Memory Type: FLASH
EEPROM Size: 32K x 8
RAM Size: 192K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Data Converters: A/D 24x12b; D/A 2x8b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x14)

paquet: 100-LQFP

Stock7 360

TPH2R805PL-LQ

Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR SOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 45 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5175 pF @ 22.5 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

paquet: -

Stock8 940

RN4911-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q TR PNP+NPN BRT Q1BSR=

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz, 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

paquet: -

Stock18 000

TRS2E65F-S1Q

Toshiba Semiconductor and Storage

DIODE SIL CARB 650V 2A TO220-2L

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Capacitance @ Vr, F: 8.7pF @ 650V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C (Max)

paquet: -

Request a Quote

TCR3DM105-LF-SE

Toshiba Semiconductor and Storage

LDO REG IOUT: 300MA VIN: 6V VOUT

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.05V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.75V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-UDFN Exposed Pad
Supplier Device Package: 4-DFN (1x1)

paquet: -

Stock29 484

XPN12006NC-L1XHQ

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 20A 8TSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 20A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Package / Case: 8-PowerVDFN

paquet: -

Stock29 856