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Produits Toshiba Semiconductor and Storage

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2SK3313(Q)
Toshiba Semiconductor and Storage

MOSFET N-CH 500V 12A TO220NIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 10V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 620 mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220NIS
  • Package / Case: TO-220-3 Full Pack
paquet: TO-220-3 Full Pack
Stock3 392
TPH3R704PL,L1Q
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 92A TSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 0.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 81W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 46A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
paquet: 8-PowerVDFN
Stock7 728
SSM3K344R,LF
Toshiba Semiconductor and Storage

SMALL LOW ON RESISTANCE MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 153pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 71 mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: -
  • Package / Case: -
paquet: -
Stock6 848
TPH2R506PL,L1Q
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100A
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5435pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 134W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 30A, 4.5V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
paquet: 8-PowerVDFN
Stock46 284
2SC4793,YHF(J
Toshiba Semiconductor and Storage

TRANS NPN 1A 230V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
paquet: TO-220-3 Full Pack
Stock4 128
2SC2229-O(TE6,F,M)
Toshiba Semiconductor and Storage

TRANS NPN 50MA 150V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Power - Max: 800mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
paquet: TO-226-3, TO-92-3 Long Body
Stock4 480
HN1B04FE-GR,LF
Toshiba Semiconductor and Storage

TRANS NPN/PNP 50V 0.15A ES6

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
paquet: SOT-563, SOT-666
Stock7 088
1SV304TPH3F
Toshiba Semiconductor and Storage

DIODE VARACTOR 10V USC

  • Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
  • Capacitance Ratio: 3
  • Capacitance Ratio Condition: C1/C4
  • Voltage - Peak Reverse (Max): 10V
  • Diode Type: Single
  • Q @ Vr, F: -
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: USC
paquet: SC-76, SOD-323
Stock7 200
1SS300,LF
Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA USM

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io) (per Diode): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 500nA @ 80V
  • Operating Temperature - Junction: 125°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
paquet: SC-70, SOT-323
Stock3 344
TCR5AM065,LF
Toshiba Semiconductor and Storage

IC REG LINEAR 0.65V 500MA 5DFN

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 0.65V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 500mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 55µA ~ 68µA
  • PSRR: 70dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XDFN Exposed Pad
  • Supplier Device Package: 5-DFNB (1.2x1.2)
paquet: 4-XDFN Exposed Pad
Stock43 512
TB67S109AFNG,EL
Toshiba Semiconductor and Storage

IC STEP MOTOR DRVR PAR 48HTSSOP

  • Motor Type - Stepper: Bipolar
  • Motor Type - AC, DC: -
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (4)
  • Interface: Parallel
  • Technology: Power MOSFET
  • Step Resolution: 1 ~ 1/32
  • Applications: General Purpose
  • Current - Output: 3A
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Voltage - Load: 10 V ~ 47 V
  • Operating Temperature: -20°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
  • Supplier Device Package: 48-HTSSOP
paquet: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Stock7 600
TC7SET125FU,LJ(CT
Toshiba Semiconductor and Storage

IC BUFF NON-INVERT 5.5V USV

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 1
  • Number of Bits per Element: 1
  • Input Type: -
  • Output Type: Push-Pull
  • Current - Output High, Low: 8mA, 8mA
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: USV
paquet: 5-TSSOP, SC-70-5, SOT-353
Stock29 760
LT056DET2S00-1F000
Toshiba Semiconductor and Storage

LCD 5.6INCH 1024X600 W-SVGA

  • Display Type: TFT - Color
  • Display Mode: Transmissive
  • Touchscreen: -
  • Diagonal Screen Size: 5.6" (142.24mm)
  • Viewing Area: 122.88mm W x 72.00mm H
  • Backlight: LED - White
  • Dot Pixels: 1024 x 600
  • Interface: LVDS
  • Graphics Color: Red, Green, Blue (RGB)
  • Background Color: -
paquet: -
Stock6 786
TLP3341(TP15,F)
Toshiba Semiconductor and Storage

PHOTORELAY; LOW COFF / ULTRA-LOW

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 10 Ohm
  • Load Current: 140mA
  • Voltage - Input: 1.15VDC
  • Voltage - Load: 0 ~ 40 V
  • Mounting Type: Surface Mount
  • Termination Style: SMD (SMT) Tab
  • Package / Case: 4-SMD (0.128", 3.25mm)
  • Supplier Device Package: 4-USOP
  • Relay Type: Relay
paquet: 4-SMD (0.128", 3.25mm)
Stock16 836
hot TLP781(F)
Toshiba Semiconductor and Storage

OPTOISOLATR 5KV TRANSISTOR 4-DIP

  • Number of Channels: 1
  • Voltage - Isolation: 5000Vrms
  • Current Transfer Ratio (Min): 50% @ 5mA
  • Current Transfer Ratio (Max): 600% @ 5mA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.15V
  • Current - DC Forward (If) (Max): 60mA
  • Vce Saturation (Max): 400mV
  • Operating Temperature: -55°C ~ 110°C
  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.300", 7.62mm)
  • Supplier Device Package: 4-DIP
paquet: 4-DIP (0.300", 7.62mm)
Stock36 000
TLP291-4(TP,E)
Toshiba Semiconductor and Storage

OPTOISOLTR 2.5KV 4CH TRANS 16-SO

  • Number of Channels: 4
  • Voltage - Isolation: 2500Vrms
  • Current Transfer Ratio (Min): 50% @ 5mA
  • Current Transfer Ratio (Max): 400% @ 5mA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.2V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 400mV
  • Operating Temperature: -55°C ~ 110°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.179", 4.55mm Width)
  • Supplier Device Package: 16-SO
paquet: 16-SOIC (0.179", 4.55mm Width)
Stock3 024
TLP293(GB-TPL,E
Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS 4-SO

  • Number of Channels: 1
  • Voltage - Isolation: 3750Vrms
  • Current Transfer Ratio (Min): 100% @ 5mA
  • Current Transfer Ratio (Max): 600% @ 5mA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.25V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 300mV
  • Operating Temperature: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-SOIC (0.179", 4.55mm)
  • Supplier Device Package: 4-SO
paquet: 4-SOIC (0.179", 4.55mm)
Stock94 566
hot TLP351(TP1,F)
Toshiba Semiconductor and Storage

OPTOISO 3.75KV GATE DRIVER 8SMD

  • Technology: Optical Coupling
  • Number of Channels: 1
  • Voltage - Isolation: 3750Vrms
  • Common Mode Transient Immunity (Min): 10kV/µs
  • Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
  • Pulse Width Distortion (Max): -
  • Rise / Fall Time (Typ): 50ns, 50ns
  • Current - Output High, Low: 400mA, 400mA
  • Current - Peak Output: 600mA
  • Voltage - Forward (Vf) (Typ): 1.55V
  • Current - DC Forward (If) (Max): 20mA
  • Voltage - Supply: 10 V ~ 30 V
  • Operating Temperature: -40°C ~ 100°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Gull Wing
  • Supplier Device Package: 8-SMD
  • Approvals: -
paquet: 8-SMD, Gull Wing
Stock12 948
TB6585FTG,8,EL
Toshiba Semiconductor and Storage

BRUSHLESS MOTOR DRIVER IC, SENSO

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: -
  • Function: -
  • Output Configuration: -
  • Interface: -
  • Technology: -
  • Step Resolution: -
  • Applications: -
  • Current - Output: -
  • Voltage - Supply: -
  • Voltage - Load: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Stock6 624
TB67S141NG
Toshiba Semiconductor and Storage

2 PHASE UNIPOLAR STEPPING MOTOR

  • Motor Type - Stepper: Unipolar
  • Motor Type - AC, DC: -
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (2)
  • Interface: Parallel
  • Technology: Power MOSFET
  • Step Resolution: 1, 1/2, 1/4
  • Applications: General Purpose
  • Current - Output: 3A
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Voltage - Load: 10 V ~ 40 V
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 24-SDIP (0.300", 7.62mm)
  • Supplier Device Package: 24-SDIP
paquet: 24-SDIP (0.300", 7.62mm)
Stock17 154
hot 74HCT240D
Toshiba Semiconductor and Storage

IC BUFFER INVERT 5.5V 20SOIC

  • Logic Type: Buffer, Inverting
  • Number of Elements: 2
  • Number of Bits per Element: 4
  • Input Type: -
  • Output Type: 3-State
  • Current - Output High, Low: 6mA, 6mA
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-SOIC
paquet: 20-SOIC (0.295", 7.50mm Width)
Stock22 752
74VHC4020FT
Toshiba Semiconductor and Storage

X34 PB-F BINARY COUNTER COUNTER

  • Logic Type: Binary Counter
  • Direction: Up
  • Number of Elements: 1
  • Number of Bits per Element: 14
  • Reset: Asynchronous
  • Timing: -
  • Count Rate: 210MHz
  • Trigger Type: Negative Edge
  • Voltage - Supply: 2V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 16-TSSOPB
paquet: 16-TSSOP (0.173", 4.40mm Width)
Stock24 852
RN2405-LXHF
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V SMINI

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 2.2 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200 MHz
  • Power - Max: 200 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
paquet: -
Stock18 000
SSM3J145TU-LXHF
Toshiba Semiconductor and Storage

SMOS P-CH VDSS:-20V VGSS:-8/+6V

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
  • Vgs (Max): +6V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 103mOhm @ 1A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads
paquet: -
Stock13 038
TCR3UF105A-LM-CT
Toshiba Semiconductor and Storage

IC REG LINEAR 1.05V 300MA SMV

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 1.05V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 1.057V @ 300mA
  • Current - Output: 300mA
  • Current - Quiescent (Iq): 580 nA
  • Current - Supply (Max): -
  • PSRR: 70dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
paquet: -
Stock17 985
SSM6J422TU-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 4A UF6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
  • Vgs (Max): +6V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UF6
  • Package / Case: 6-SMD, Flat Leads
paquet: -
Stock15 048
HN1B04FU-GR-LXHF
Toshiba Semiconductor and Storage

AUTO AEC-Q PNP + NPN TR VCEO:-50

  • Transistor Type: 1 NPN, 1 PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 200mW
  • Frequency - Transition: 150MHz, 120MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
paquet: -
Stock17 994
TB67S128FTG-EL
Toshiba Semiconductor and Storage

STEPPE RMOTOR DRIVER IC WITH ACT

  • Motor Type - Stepper: Bipolar
  • Motor Type - AC, DC: Brushless DC (BLDC)
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (4)
  • Interface: PWM
  • Technology: Power MOSFET
  • Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32, 1/128
  • Applications: General Purpose
  • Current - Output: 5A
  • Voltage - Supply: 4.75V ~ 5.25V
  • Voltage - Load: 6.5V ~ 44V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 64-VFQFN Exposed Pad
  • Supplier Device Package: 64-VQFN (9x9)
paquet: -
Stock23 643