Page 8 - Produits Infineon Technologies - Transistors - FET, MOSFET - Simples

IPD70N10S312ATMA2

Infineon Technologies

MOSFET_(75V 120V(

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 70A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-11
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

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MOSFET (Metal Oxide)

100 V

70A (Tc)

10V

4V @ 83µA

65 nC @ 10 V

4355 pF @ 25 V

±20V

-

125W (Tc)

11.1mOhm @ 70A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3-11

TO-252-3, DPAK (2 Leads + Tab), SC-63

IQE022N06LM5SCATMA1

Infineon Technologies

OPTIMOS 5 POWER-TRANSISTOR 60V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-WHSON-8
Package / Case: 8-PowerWDFN

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Stock17 985

MOSFET (Metal Oxide)

60 V

24A (Ta), 151A (Tc)

4.5V, 10V

2.3V @ 48µA

53 nC @ 10 V

4420 pF @ 30 V

±20V

-

2.5W (Ta), 100W (Tc)

2.2mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-WHSON-8

8-PowerWDFN

IPBE65R050CFD7AATMA1

Infineon Technologies

MOSFET N-CH 650V 45A TO263-7

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-3-10
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

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Stock8 553

MOSFET (Metal Oxide)

650 V

45A (Tc)

10V

4.5V @ 1.24mA

102 nC @ 10 V

4975 pF @ 400 V

±20V

-

227W (Tc)

50mOhm @ 24.8A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-TO263-7-3-10

TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

IPD50N10S3L16ATMA2

Infineon Technologies

MOSFET_(75V 120V(

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-11
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

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MOSFET (Metal Oxide)

100 V

50A (Tc)

4.5V, 10V

2.4V @ 60µA

64 nC @ 10 V

4180 pF @ 25 V

±20V

-

100W (Tc)

15mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3-11

TO-252-3, DPAK (2 Leads + Tab), SC-63

ISC130N20NM6ATMA1

Infineon Technologies

MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

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-

IPA50R280E6

Infineon Technologies

IPA50R280 - 500V, CoolMOS N-Chan

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

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-

IPP60R145CFD7XKSA1

Infineon Technologies

MOSFET N CH

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

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MOSFET (Metal Oxide)

600 V

16A (Tc)

10V

4.5V @ 340µA

31 nC @ 10 V

1330 pF @ 400 V

±20V

-

83W (Tc)

145mOhm @ 6.8A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

IMZA120R014M1HXKSA1

Infineon Technologies

SIC DISCRETE

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 127A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs(th) (Max) @ Id: 5.2V @ 23.4mA
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4580 nF @ 25 V
Vgs (Max): +20V, -5V
FET Feature: -
Power Dissipation (Max): 455W (Tc)
Rds On (Max) @ Id, Vgs: 18.4mOhm @ 54.3A, 18V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4-8
Package / Case: TO-247-4

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SiCFET (Silicon Carbide)

1200 V

127A (Tc)

15V, 18V

5.2V @ 23.4mA

110 nC @ 18 V

4580 nF @ 25 V

+20V, -5V

-

455W (Tc)

18.4mOhm @ 54.3A, 18V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO247-4-8

TO-247-4

SPP11N65C3HKSA1

Infineon Technologies

MOSFET N-CH 650V 11A TO-220

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

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-

11A (Tc)

-

SPP17N80C3XKSA1

Infineon Technologies

MOSFET N-CH 800V 17A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

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Stock468

MOSFET (Metal Oxide)

800 V

17A (Tc)

10V

3.9V @ 1mA

177 nC @ 10 V

2320 pF @ 25 V

±20V

-

208W (Tc)

290mOhm @ 11A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

IPA057N06N3GXKSA1

Infineon Technologies

MOSFET N-CH 60V 60A TO220-3-31

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 58µA
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-31
Package / Case: TO-220-3 Full Pack

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MOSFET (Metal Oxide)

60 V

60A (Tc)

10V

4V @ 58µA

82 nC @ 10 V

6600 pF @ 30 V

±20V

-

38W (Tc)

5.7mOhm @ 60A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-31

TO-220-3 Full Pack

BSC022N04LS6ATMA1

Infineon Technologies

MOSFET N-CH 40V 27A/100A TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 79W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-1
Package / Case: 8-PowerTDFN

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Stock45 510

MOSFET (Metal Oxide)

40 V

27A (Ta), 100A (Tc)

4.5V, 10V

2.3V @ 250µA

28 nC @ 10 V

1900 pF @ 20 V

±20V

-

3W (Ta), 79W (Tc)

2.2mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8-1

8-PowerTDFN

IPB034N06N3GATMA2

Infineon Technologies

TRENCH 40<-<100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 93µA
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-3
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)

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MOSFET (Metal Oxide)

60 V

100A (Tc)

10V

4V @ 93µA

130 nC @ 10 V

11000 pF @ 30 V

±20V

-

167W (Tc)

3.4mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7-3

TO-263-7, D2PAK (6 Leads + Tab)

IPB013N06NF2SATMA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 198A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 246µA
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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Stock465

MOSFET (Metal Oxide)

60 V

40A (Ta), 198A (Tc)

6V, 10V

3.3V @ 246µA

305 nC @ 10 V

13800 pF @ 30 V

±20V

-

3.8W (Ta), 300W (Tc)

1.3mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPB35N10S3L26ATMA2

Infineon Technologies

MOSFET_(75V 120V(

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 26.3mOhm @ 35A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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MOSFET (Metal Oxide)

100 V

35A (Tc)

4.5V, 10V

2.4V @ 39µA

39 nC @ 10 V

2700 pF @ 25 V

±20V

-

71W (Tc)

26.3mOhm @ 35A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3-2

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPT020N13NM6ATMA1

Infineon Technologies

TRENCH >=100V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

paquet: -

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-

IPB60R280P7ATMA1

Infineon Technologies

MOSFET N-CH 600V 12A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 190µA
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 53W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

paquet: -

Stock213

MOSFET (Metal Oxide)

600 V

12A (Tc)

10V

4V @ 190µA

18 nC @ 10 V

761 pF @ 400 V

±20V

-

53W (Tc)

280mOhm @ 3.8A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

BSC016N06NSTATMA1

Infineon Technologies

MOSFET N-CH 60V 31A/100A TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8 FL
Package / Case: 8-PowerTDFN

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Stock49 959

MOSFET (Metal Oxide)

60 V

31A (Ta), 100A (Tc)

6V, 10V

3.3V @ 95µA

95 nC @ 10 V

6500 pF @ 30 V

±20V

-

3W (Ta), 167W (Tc)

1.6mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8 FL

8-PowerTDFN

IMBG65R260M1HXTMA1

Infineon Technologies

SILICON CARBIDE MOSFET PG-TO263-

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: 5.7V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 201 pF @ 400 V
Vgs (Max): +23V, -5V
FET Feature: -
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 346mOhm @ 3.6A, 18V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-12
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

paquet: -

Stock2 934

SiCFET (Silicon Carbide)

650 V

6A (Tc)

18V

5.7V @ 1.1mA

6 nC @ 18 V

201 pF @ 400 V

+23V, -5V

-

65W (Tc)

346mOhm @ 3.6A, 18V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7-12

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

IRF8721TRPBFXTMA1

Infineon Technologies

TRENCH <= 40V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

paquet: -

Stock12 000

-

SPW20N60C3FKSA1

Infineon Technologies

MOSFET N-CH 650V 20.7A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-1
Package / Case: TO-247-3

paquet: -

Stock6 354

MOSFET (Metal Oxide)

650 V

20.7A (Tc)

10V

3.9V @ 1mA

114 nC @ 10 V

2400 pF @ 25 V

±20V

-

208W (Tc)

190mOhm @ 13.1A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3-1

TO-247-3

IPTG029N13NM6ATMA1

Infineon Technologies

TRENCH >=100V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

paquet: -

Request a Quote

-

IPB60R360P7ATMA1

Infineon Technologies

MOSFET N-CH 600V 9A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

paquet: -

Stock16 677

MOSFET (Metal Oxide)

600 V

9A (Tc)

10V

4V @ 140µA

13 nC @ 10 V

555 pF @ 400 V

±20V

-

41W (Tc)

360mOhm @ 2.7A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

BSC152N15LS5ATMA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 60µA
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 75 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 15.2mOhm @ 29A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

paquet: -

Stock11 970

MOSFET (Metal Oxide)

150 V

8.9A (Ta), 55A (Tc)

4.5V, 10V

2.3V @ 60µA

29 nC @ 10 V

2000 pF @ 75 V

±20V

-

2.5W (Ta), 96W (Tc)

15.2mOhm @ 29A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8

8-PowerTDFN

IPU95R1K2P7AKMA1

Infineon Technologies

MOSFET N-CH 950V 6A TO251-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 950 V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO251-3
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

paquet: -

Stock4 404

MOSFET (Metal Oxide)

950 V

6A (Tc)

10V

3.5V @ 140µA

15 nC @ 10 V

478 pF @ 400 V

±20V

-

52W (Tc)

1.2Ohm @ 2.7A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO251-3

TO-251-3 Short Leads, IPak, TO-251AA

IPA60R600P7SE8228XKSA1

Infineon Technologies

MOSFET N-CH 600V 6A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 80µA
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 21W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

paquet: -

Stock1 500

MOSFET (Metal Oxide)

600 V

6A (Tc)

10V

4V @ 80µA

9 nC @ 10 V

363 pF @ 400 V

±20V

-

21W (Tc)

600mOhm @ 1.7A, 10V

-40°C ~ 150°C (TJ)

Through Hole

PG-TO220-FP

TO-220-3 Full Pack

IRF150P221XKMA1

Infineon Technologies

MOSFET N-CH 150V 186A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 186A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.6V @ 264µA
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 75 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 341W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

paquet: -

Request a Quote

MOSFET (Metal Oxide)

150 V

186A (Tc)

10V

4.6V @ 264µA

100 nC @ 10 V

6000 pF @ 75 V

±20V

-

341W (Tc)

4.5mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO247-3

TO-247-3

IPP076N15N5XKSA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs(th) (Max) @ Id: 4.6V @ 160µA
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 56A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

paquet: -

Request a Quote

MOSFET (Metal Oxide)

150 V

112A (Tc)

8V, 10V

4.6V @ 160µA

61 nC @ 10 V

4700 pF @ 75 V

±20V

-

214W (Tc)

7.6mOhm @ 56A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

Référence	Fabricant	Description	paquet	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPD70N10S312ATMA2	Infineon Technologies	MOSFET_(75V 120V( FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 83µA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	paquet: -	Request a Quote	MOSFET (Metal Oxide)	100 V	70A (Tc)	10V	4V @ 83µA	65 nC @ 10 V	4355 pF @ 25 V	±20V	-	125W (Tc)	11.1mOhm @ 70A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-11	TO-252-3, DPAK (2 Leads + Tab), SC-63
IQE022N06LM5SCATMA1	Infineon Technologies	OPTIMOS 5 POWER-TRANSISTOR 60V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 48µA Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-WHSON-8 Package / Case: 8-PowerWDFN	paquet: -	Stock17 985	MOSFET (Metal Oxide)	60 V	24A (Ta), 151A (Tc)	4.5V, 10V	2.3V @ 48µA	53 nC @ 10 V	4420 pF @ 30 V	±20V	-	2.5W (Ta), 100W (Tc)	2.2mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-WHSON-8	8-PowerWDFN
IPBE65R050CFD7AATMA1	Infineon Technologies	MOSFET N-CH 650V 45A TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.24mA Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-3-10 Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB	paquet: -	Stock8 553	MOSFET (Metal Oxide)	650 V	45A (Tc)	10V	4.5V @ 1.24mA	102 nC @ 10 V	4975 pF @ 400 V	±20V	-	227W (Tc)	50mOhm @ 24.8A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO263-7-3-10	TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
IPD50N10S3L16ATMA2	Infineon Technologies	MOSFET_(75V 120V( FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 60µA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	paquet: -	Request a Quote	MOSFET (Metal Oxide)	100 V	50A (Tc)	4.5V, 10V	2.4V @ 60µA	64 nC @ 10 V	4180 pF @ 25 V	±20V	-	100W (Tc)	15mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-11	TO-252-3, DPAK (2 Leads + Tab), SC-63
ISC130N20NM6ATMA1	Infineon Technologies	MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	paquet: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPA50R280E6	Infineon Technologies	IPA50R280 - 500V, CoolMOS N-Chan FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	paquet: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPP60R145CFD7XKSA1	Infineon Technologies	MOSFET N CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 340µA Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 6.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	paquet: -	Request a Quote	MOSFET (Metal Oxide)	600 V	16A (Tc)	10V	4.5V @ 340µA	31 nC @ 10 V	1330 pF @ 400 V	±20V	-	83W (Tc)	145mOhm @ 6.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
IMZA120R014M1HXKSA1	Infineon Technologies	SIC DISCRETE FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 127A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 5.2V @ 23.4mA Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4580 nF @ 25 V Vgs (Max): +20V, -5V FET Feature: - Power Dissipation (Max): 455W (Tc) Rds On (Max) @ Id, Vgs: 18.4mOhm @ 54.3A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-8 Package / Case: TO-247-4	paquet: -	Request a Quote	SiCFET (Silicon Carbide)	1200 V	127A (Tc)	15V, 18V	5.2V @ 23.4mA	110 nC @ 18 V	4580 nF @ 25 V	+20V, -5V	-	455W (Tc)	18.4mOhm @ 54.3A, 18V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-4-8	TO-247-4
SPP11N65C3HKSA1	Infineon Technologies	MOSFET N-CH 650V 11A TO-220 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	paquet: -	Request a Quote	-	-	11A (Tc)	-	-	-	-	-	-	-	-	-	-	-	-
SPP17N80C3XKSA1	Infineon Technologies	MOSFET N-CH 800V 17A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	paquet: -	Stock468	MOSFET (Metal Oxide)	800 V	17A (Tc)	10V	3.9V @ 1mA	177 nC @ 10 V	2320 pF @ 25 V	±20V	-	208W (Tc)	290mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IPA057N06N3GXKSA1	Infineon Technologies	MOSFET N-CH 60V 60A TO220-3-31 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 58µA Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-31 Package / Case: TO-220-3 Full Pack	paquet: -	Request a Quote	MOSFET (Metal Oxide)	60 V	60A (Tc)	10V	4V @ 58µA	82 nC @ 10 V	6600 pF @ 30 V	±20V	-	38W (Tc)	5.7mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-31	TO-220-3 Full Pack
BSC022N04LS6ATMA1	Infineon Technologies	MOSFET N-CH 40V 27A/100A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 79W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	paquet: -	Stock45 510	MOSFET (Metal Oxide)	40 V	27A (Ta), 100A (Tc)	4.5V, 10V	2.3V @ 250µA	28 nC @ 10 V	1900 pF @ 20 V	±20V	-	3W (Ta), 79W (Tc)	2.2mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-1	8-PowerTDFN
IPB034N06N3GATMA2	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 93µA Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-3 Package / Case: TO-263-7, D2PAK (6 Leads + Tab)	paquet: -	Request a Quote	MOSFET (Metal Oxide)	60 V	100A (Tc)	10V	4V @ 93µA	130 nC @ 10 V	11000 pF @ 30 V	±20V	-	167W (Tc)	3.4mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-3	TO-263-7, D2PAK (6 Leads + Tab)
IPB013N06NF2SATMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 198A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 246µA Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	paquet: -	Stock465	MOSFET (Metal Oxide)	60 V	40A (Ta), 198A (Tc)	6V, 10V	3.3V @ 246µA	305 nC @ 10 V	13800 pF @ 30 V	±20V	-	3.8W (Ta), 300W (Tc)	1.3mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPB35N10S3L26ATMA2	Infineon Technologies	MOSFET_(75V 120V( FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 39µA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 26.3mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	paquet: -	Request a Quote	MOSFET (Metal Oxide)	100 V	35A (Tc)	4.5V, 10V	2.4V @ 39µA	39 nC @ 10 V	2700 pF @ 25 V	±20V	-	71W (Tc)	26.3mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPT020N13NM6ATMA1	Infineon Technologies	TRENCH >=100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	paquet: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPB60R280P7ATMA1	Infineon Technologies	MOSFET N-CH 600V 12A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 190µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 53W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	paquet: -	Stock213	MOSFET (Metal Oxide)	600 V	12A (Tc)	10V	4V @ 190µA	18 nC @ 10 V	761 pF @ 400 V	±20V	-	53W (Tc)	280mOhm @ 3.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
BSC016N06NSTATMA1	Infineon Technologies	MOSFET N-CH 60V 31A/100A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 95µA Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	paquet: -	Stock49 959	MOSFET (Metal Oxide)	60 V	31A (Ta), 100A (Tc)	6V, 10V	3.3V @ 95µA	95 nC @ 10 V	6500 pF @ 30 V	±20V	-	3W (Ta), 167W (Tc)	1.6mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN
IMBG65R260M1HXTMA1	Infineon Technologies	SILICON CARBIDE MOSFET PG-TO263- FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.7V @ 1.1mA Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 201 pF @ 400 V Vgs (Max): +23V, -5V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 346mOhm @ 3.6A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-12 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	paquet: -	Stock2 934	SiCFET (Silicon Carbide)	650 V	6A (Tc)	18V	5.7V @ 1.1mA	6 nC @ 18 V	201 pF @ 400 V	+23V, -5V	-	65W (Tc)	346mOhm @ 3.6A, 18V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IRF8721TRPBFXTMA1	Infineon Technologies	TRENCH <= 40V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	paquet: -	Stock12 000	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SPW20N60C3FKSA1	Infineon Technologies	MOSFET N-CH 650V 20.7A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-1 Package / Case: TO-247-3	paquet: -	Stock6 354	MOSFET (Metal Oxide)	650 V	20.7A (Tc)	10V	3.9V @ 1mA	114 nC @ 10 V	2400 pF @ 25 V	±20V	-	208W (Tc)	190mOhm @ 13.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
IPTG029N13NM6ATMA1	Infineon Technologies	TRENCH >=100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	paquet: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPB60R360P7ATMA1	Infineon Technologies	MOSFET N-CH 600V 9A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 140µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 41W (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	paquet: -	Stock16 677	MOSFET (Metal Oxide)	600 V	9A (Tc)	10V	4V @ 140µA	13 nC @ 10 V	555 pF @ 400 V	±20V	-	41W (Tc)	360mOhm @ 2.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
BSC152N15LS5ATMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 60µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 15.2mOhm @ 29A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	paquet: -	Stock11 970	MOSFET (Metal Oxide)	150 V	8.9A (Ta), 55A (Tc)	4.5V, 10V	2.3V @ 60µA	29 nC @ 10 V	2000 pF @ 75 V	±20V	-	2.5W (Ta), 96W (Tc)	15.2mOhm @ 29A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IPU95R1K2P7AKMA1	Infineon Technologies	MOSFET N-CH 950V 6A TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 140µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	paquet: -	Stock4 404	MOSFET (Metal Oxide)	950 V	6A (Tc)	10V	3.5V @ 140µA	15 nC @ 10 V	478 pF @ 400 V	±20V	-	52W (Tc)	1.2Ohm @ 2.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPak, TO-251AA
IPA60R600P7SE8228XKSA1	Infineon Technologies	MOSFET N-CH 600V 6A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 21W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	paquet: -	Stock1 500	MOSFET (Metal Oxide)	600 V	6A (Tc)	10V	4V @ 80µA	9 nC @ 10 V	363 pF @ 400 V	±20V	-	21W (Tc)	600mOhm @ 1.7A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IRF150P221XKMA1	Infineon Technologies	MOSFET N-CH 150V 186A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 186A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.6V @ 264µA Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 341W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	paquet: -	Request a Quote	MOSFET (Metal Oxide)	150 V	186A (Tc)	10V	4.6V @ 264µA	100 nC @ 10 V	6000 pF @ 75 V	±20V	-	341W (Tc)	4.5mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IPP076N15N5XKSA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 112A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.6V @ 160µA Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 56A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	paquet: -	Request a Quote	MOSFET (Metal Oxide)	150 V	112A (Tc)	8V, 10V	4.6V @ 160µA	61 nC @ 10 V	4700 pF @ 75 V	±20V	-	214W (Tc)	7.6mOhm @ 56A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3