Page 30 - Transistors - FET, MOSFET - Matrices | Produits à semiconducteurs discrets

Référence	Fabricant	Description	paquet	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7752TR	Infineon Technologies	MOSFET 2N-CH 30V 4.6A 8-TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.6A Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.6A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 861pF @ 25V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	paquet: 8-TSSOP (0.173", 4.40mm Width)	Stock4 768	Logic Level Gate	30V	4.6A	30 mOhm @ 4.6A, 10V	2V @ 250µA	9nC @ 4.5V	861pF @ 25V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
IRF7389	Infineon Technologies	MOSFET N/P-CH 30V 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	paquet: 8-SOIC (0.154", 3.90mm Width)	Stock80 868	Logic Level Gate	30V	-	29 mOhm @ 5.8A, 10V	1V @ 250µA	33nC @ 10V	650pF @ 25V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FW282-TL-E	ON Semiconductor	MOSFET 2N-CH 35V 6A 8SOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 37 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 20V Power - Max: 2.2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP	paquet: 8-SOIC (0.173", 4.40mm Width)	Stock120 012	Logic Level Gate	35V	6A	37 mOhm @ 6A, 10V	-	10nC @ 10V	470pF @ 20V	2.2W	150°C (TJ)	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP
SI1905BDH-T1-E3	Vishay Siliconix	MOSFET 2P-CH 8V 0.63A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 630mA Rds On (Max) @ Id, Vgs: 542 mOhm @ 580mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 4V Power - Max: 357mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	paquet: 6-TSSOP, SC-88, SOT-363	Stock518 040	Logic Level Gate	8V	630mA	542 mOhm @ 580mA, 4.5V	1V @ 250µA	1.5nC @ 4.5V	62pF @ 4V	357mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
APTM50HM75FTG	Microsemi Corporation	MOSFET 4N-CH 500V 46A SP4 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 46A Rds On (Max) @ Id, Vgs: 90 mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V Power - Max: 357W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	paquet: SP4	Stock2 464	Standard	500V	46A	90 mOhm @ 23A, 10V	5V @ 2.5mA	123nC @ 10V	5600pF @ 25V	357W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
APTML102UM09R004T3AG	Microsemi Corporation	MOSFET 2N-CH 100V 154A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 154A (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V Power - Max: 480W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	paquet: SP3	Stock5 984	Standard	100V	154A (Tc)	10 mOhm @ 69.5A, 10V	4V @ 2.5mA	-	9875pF @ 25V	480W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
NTGD3148NT1G	ON Semiconductor	MOSFET 2N-CH 20V 3A 6TSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Power - Max: 900mW Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	paquet: SOT-23-6 Thin, TSOT-23-6	Stock516 672	Logic Level Gate	20V	3A	70 mOhm @ 3.5A, 4.5V	1.5V @ 250µA	3.8nC @ 4.5V	300pF @ 10V	900mW	-50°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
SSM6N7002BFU,LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 60V 0.2A US6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	paquet: 6-TSSOP, SC-88, SOT-363	Stock3 248	Logic Level Gate	60V	200mA	2.1 Ohm @ 500mA, 10V	3.1V @ 250µA	-	17pF @ 25V	300mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
TSM500P02DCQ RFG	TSC America Inc.	MOSFET, DUAL, P-CHANNEL, -20V, - FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 10V Power - Max: 620mW Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-TDFN (2x2)	paquet: 6-VDFN Exposed Pad	Stock5 008	Standard	20V	4.7A (Tc)	50 mOhm @ 3A, 4.5V	800mV @ 250µA	9.6nC @ 4.5V	1230pF @ 10V	620mW	-50°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	6-TDFN (2x2)
CSD87502Q2T	Texas Instruments	MOSFET 2N-CH 30V 5A 6WSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 32.4 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 353pF @ 15V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WSON (2x2)	paquet: 6-WDFN Exposed Pad	Stock3 776	Logic Level Gate, 5V Drive	30V	5A	32.4 mOhm @ 4A, 10V	2V @ 250µA	6nC @ 10V	353pF @ 15V	2.3W	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-WSON (2x2)
SIA517DJ-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 12V 4.5A SC-70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V Power - Max: 6.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	paquet: PowerPAK? SC-70-6 Dual	Stock229 356	Logic Level Gate	12V	4.5A	29 mOhm @ 5A, 4.5V	1V @ 250µA	15nC @ 8V	500pF @ 6V	6.5W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
CMLDM3737 TR	Central Semiconductor Corp	MOSFET 2N-CH 20V 0.54A SOT563 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Power - Max: 350mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	paquet: SOT-563, SOT-666	Stock3 152	Logic Level Gate	20V	540mA	550 mOhm @ 540mA, 4.5V	1V @ 250µA	1.58nC @ 4.5V	150pF @ 16V	350mW	-65°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
SSM6N15AFE,LM	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 0.1A ES6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 4 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 7.8pF @ 3V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	paquet: SOT-563, SOT-666	Stock3 696	Logic Level Gate	30V	100mA	4 Ohm @ 10mA, 4V	1.5V @ 100µA	-	7.8pF @ 3V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6 (1.6x1.6)
EPC2105ENGRT	EPC	MOSFET 2NCH 80V 9.5A DIE FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 9.5A Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	paquet: Die	Stock46 992	GaNFET (Gallium Nitride)	80V	9.5A	14.5 mOhm @ 20A, 5V	2.5V @ 2.5mA	2.5nC @ 5V	300pF @ 40V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
SSM6N61NU,LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 4A UDFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 33 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-UDFNB (2x2)	paquet: 6-WDFN Exposed Pad	Stock22 290	Logic Level Gate, 1.5V Drive	20V	4A	33 mOhm @ 4A, 4.5V	1V @ 1mA	3.6nC @ 4.5V	410pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-UDFNB (2x2)
BSM180D12P2C101	Rohm Semiconductor	MOSFET 2N-CH 1200V 180A MODULE FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 180A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4V @ 35.2mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 10V Power - Max: 1130W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: - Package / Case: Module Supplier Device Package: Module	paquet: Module	Stock6 512	Standard	1200V (1.2kV)	180A	-	4V @ 35.2mA	-	23000pF @ 10V	1130W	-40°C ~ 150°C (TJ)	-	Module	Module
IRF7103PBF	Infineon Technologies	MOSFET 2N-CH 50V 3A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	paquet: 8-SOIC (0.154", 3.90mm Width)	Stock14 220	Standard	50V	3A	130 mOhm @ 3A, 10V	3V @ 250µA	30nC @ 10V	290pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SIX3134KA-TP	Micro Commercial Co	MOSFET 2N-CH 20V 0.75A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 16V Power - Max: 180mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	paquet: -	Stock9 576	-	20V	750mA	300mOhm @ 500mA, 4.5V	950mV @ 250µA	0.8nC @ 4.5V	33pF @ 16V	180mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
2N7002DWK-13	Diodes Incorporated	MOSFET 2N-CH 60V 0.261A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 261mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Power - Max: 330mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	paquet: -	Request a Quote	-	60V	261mA (Ta)	3Ohm @ 200mA, 10V	2V @ 250µA	1.04nC @ 10V	41pF @ 30V	330mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMP2045UFDB-13	Diodes Incorporated	MOSFET 2P-CH 20V 3.1A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 634pF @ 10V Power - Max: 740mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	paquet: -	Request a Quote	-	20V	3.1A (Ta)	90mOhm @ 4A, 4.5V	1V @ 250µA	6.8nC @ 4.5V	634pF @ 10V	740mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
AOSD26313C	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 30V 7A/5.7A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 5.7A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V, 32mOhm @ 5.7A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V, 1100pF @ 15V Power - Max: 1.7W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	paquet: -	Request a Quote	-	30V	7A (Ta), 5.7A (Ta)	20mOhm @ 7A, 10V, 32mOhm @ 5.7A, 10V	2.3V @ 250µA, 2.2V @ 250µA	20nC @ 10V, 33nC @ 10V	600pF @ 15V, 1100pF @ 15V	1.7W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MSCSM120AM02CT6LIAG	Microchip Technology	SIC 2N-CH 1200V 947A SP6C LI FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 947A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V Vgs(th) (Max) @ Id: 2.8V @ 12mA Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 36240pF @ 1000V Power - Max: 3.75kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6C LI	paquet: -	Request a Quote	-	1200V (1.2kV)	947A (Tc)	2.6mOhm @ 480A, 20V	2.8V @ 12mA	2784nC @ 20V	36240pF @ 1000V	3.75kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP6C LI
SH8MA4TB1	Rohm Semiconductor	MOSFET N/P-CH 30V 9A/8.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 8.5A (Ta) Rds On (Max) @ Id, Vgs: 21.4mOhm @ 9A, 10V, 29.6mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V, 19.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V, 890pF @ 15V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	paquet: -	Stock57 819	-	30V	9A (Ta), 8.5A (Ta)	21.4mOhm @ 9A, 10V, 29.6mOhm @ 8.5A, 10V	2.5V @ 1mA	15.5nC @ 10V, 19.6nC @ 10V	640pF @ 15V, 890pF @ 15V	2W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMN5L06VK-7-79	Diodes Incorporated	MOSFET 2N-CH 50V 0.28A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	paquet: -	Request a Quote	-	50V	280mA (Ta)	2Ohm @ 50mA, 5V	1.2V @ 250µA	-	50pF @ 25V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMN32D0LV-7	Diodes Incorporated	MOSFET 2N-CH 30V 0.68A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 680mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V Power - Max: 480mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	paquet: -	Stock7 500	-	30V	680mA (Ta)	1.2Ohm @ 100mA, 4V	1.2V @ 250µA	0.62nC @ 4.5V	44.8pF @ 15V	480mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
SIL6321-TP	Micro Commercial Co	MOSFET N/P-CH 30V 1A SOT23-6L FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1A Rds On (Max) @ Id, Vgs: 320mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA, 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 15V, 1050pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6L	paquet: -	Request a Quote	-	30V	1A	320mOhm @ 1A, 10V	1.4V @ 250µA, 1.3V @ 250µA	-	1155pF @ 15V, 1050pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6L
UPA1793G-E1-AT	Renesas Electronics Corporation	MOSFET N/P-CH 20V 3A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 69mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V Power - Max: 2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-PSOP	paquet: -	Request a Quote	Logic Level Gate	20V	3A	69mOhm @ 1.5A, 4.5V	1.5V @ 1mA	3.1nC @ 4V	160pF @ 10V	2W	-	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-PSOP
DMC2025UFDBQ-7	Diodes Incorporated	MOSFET N/P-CH 20V 6A/3.5A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 3.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA, 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 15nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V, 642pF @ 10V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	paquet: -	Stock8 835	-	20V	6A (Ta), 3.5A (Ta)	25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V	1V @ 250µA, 1.4V @ 250µA	12.3nC @ 10V, 15nC @ 8V	486pF @ 10V, 642pF @ 10V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)

IRF7752TR

Infineon Technologies

MOSFET 2N-CH 30V 4.6A 8-TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 861pF @ 25V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

paquet: 8-TSSOP (0.173", 4.40mm Width)

Stock4 768

Logic Level Gate

30V

4.6A

30 mOhm @ 4.6A, 10V

2V @ 250µA

9nC @ 4.5V

861pF @ 25V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

IRF7389

Infineon Technologies

MOSFET N/P-CH 30V 8-SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

paquet: 8-SOIC (0.154", 3.90mm Width)

Stock80 868

Logic Level Gate

30V

-

29 mOhm @ 5.8A, 10V

1V @ 250µA

33nC @ 10V

650pF @ 25V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FW282-TL-E

ON Semiconductor

MOSFET 2N-CH 35V 6A 8SOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 35V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 37 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 20V
Power - Max: 2.2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP

paquet: 8-SOIC (0.173", 4.40mm Width)

Stock120 012

Logic Level Gate

35V

6A

37 mOhm @ 6A, 10V

-

10nC @ 10V

470pF @ 20V

2.2W

150°C (TJ)

Surface Mount

8-SOIC (0.173", 4.40mm Width)

8-SOP

SI1905BDH-T1-E3

Vishay Siliconix

MOSFET 2P-CH 8V 0.63A SC70-6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 630mA
Rds On (Max) @ Id, Vgs: 542 mOhm @ 580mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 4V
Power - Max: 357mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

paquet: 6-TSSOP, SC-88, SOT-363

Stock518 040

Logic Level Gate

8V

630mA

542 mOhm @ 580mA, 4.5V

1V @ 250µA

1.5nC @ 4.5V

62pF @ 4V

357mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

APTM50HM75FTG

Microsemi Corporation

MOSFET 4N-CH 500V 46A SP4

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 46A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 23A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
Power - Max: 357W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

paquet: SP4

Stock2 464

Standard

500V

46A

90 mOhm @ 23A, 10V

5V @ 2.5mA

123nC @ 10V

5600pF @ 25V

357W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

APTML102UM09R004T3AG

Microsemi Corporation

MOSFET 2N-CH 100V 154A SP3

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Power - Max: 480W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

paquet: SP3

Stock5 984

Standard

100V

154A (Tc)

10 mOhm @ 69.5A, 10V

4V @ 2.5mA

-

9875pF @ 25V

480W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

NTGD3148NT1G

ON Semiconductor

MOSFET 2N-CH 20V 3A 6TSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Power - Max: 900mW
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

paquet: SOT-23-6 Thin, TSOT-23-6

Stock516 672

Logic Level Gate

20V

3A

70 mOhm @ 3.5A, 4.5V

1.5V @ 250µA

3.8nC @ 4.5V

300pF @ 10V

900mW

-50°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

SSM6N7002BFU,LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.2A US6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

paquet: 6-TSSOP, SC-88, SOT-363

Stock3 248

Logic Level Gate

60V

200mA

2.1 Ohm @ 500mA, 10V

3.1V @ 250µA

-

17pF @ 25V

300mW

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

TSM500P02DCQ RFG

TSC America Inc.

MOSFET, DUAL, P-CHANNEL, -20V, -

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 50 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 10V
Power - Max: 620mW
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-TDFN (2x2)

paquet: 6-VDFN Exposed Pad

Stock5 008

Standard

20V

4.7A (Tc)

50 mOhm @ 3A, 4.5V

800mV @ 250µA

9.6nC @ 4.5V

1230pF @ 10V

620mW

-50°C ~ 150°C (TJ)

Surface Mount

6-VDFN Exposed Pad

6-TDFN (2x2)

CSD87502Q2T

Texas Instruments

MOSFET 2N-CH 30V 5A 6WSON

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 32.4 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 353pF @ 15V
Power - Max: 2.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WSON (2x2)

paquet: 6-WDFN Exposed Pad

Stock3 776

Logic Level Gate, 5V Drive

30V

5A

32.4 mOhm @ 4A, 10V

2V @ 250µA

6nC @ 10V

353pF @ 15V

2.3W

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-WSON (2x2)

SIA517DJ-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 12V 4.5A SC-70-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V
Power - Max: 6.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

paquet: PowerPAK? SC-70-6 Dual

Stock229 356

Logic Level Gate

12V

4.5A

29 mOhm @ 5A, 4.5V

1V @ 250µA

15nC @ 8V

500pF @ 6V

6.5W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Dual

CMLDM3737 TR

Central Semiconductor Corp

MOSFET 2N-CH 20V 0.54A SOT563

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA
Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Power - Max: 350mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

paquet: SOT-563, SOT-666

Stock3 152

Logic Level Gate

20V

540mA

550 mOhm @ 540mA, 4.5V

1V @ 250µA

1.58nC @ 4.5V

150pF @ 16V

350mW

-65°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

SSM6N15AFE,LM

Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 0.1A ES6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 4 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 7.8pF @ 3V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6 (1.6x1.6)

paquet: SOT-563, SOT-666

Stock3 696

Logic Level Gate

30V

100mA

4 Ohm @ 10mA, 4V

1.5V @ 100µA

-

7.8pF @ 3V

150mW

150°C (TJ)

Surface Mount

SOT-563, SOT-666

ES6 (1.6x1.6)

EPC2105ENGRT

EPC

MOSFET 2NCH 80V 9.5A DIE

FET Type: 2 N-Channel (Half Bridge)
FET Feature: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.5A
Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

paquet: Die

Stock46 992

GaNFET (Gallium Nitride)

80V

9.5A

14.5 mOhm @ 20A, 5V

2.5V @ 2.5mA

2.5nC @ 5V

300pF @ 40V

-

-40°C ~ 150°C (TJ)

Surface Mount

Die

SSM6N61NU,LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 4A UDFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 33 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 10V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-UDFNB (2x2)

paquet: 6-WDFN Exposed Pad

Stock22 290

Logic Level Gate, 1.5V Drive

20V

4A

33 mOhm @ 4A, 4.5V

1V @ 1mA

3.6nC @ 4.5V

410pF @ 10V

2W

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-UDFNB (2x2)

BSM180D12P2C101

Rohm Semiconductor

MOSFET 2N-CH 1200V 180A MODULE

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 10V
Power - Max: 1130W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: -
Package / Case: Module
Supplier Device Package: Module

paquet: Module

Stock6 512

Standard

1200V (1.2kV)

180A

-

4V @ 35.2mA

-

23000pF @ 10V

1130W

-40°C ~ 150°C (TJ)

-

Module

IRF7103PBF

Infineon Technologies

MOSFET 2N-CH 50V 3A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

paquet: 8-SOIC (0.154", 3.90mm Width)

Stock14 220

Standard

50V

3A

130 mOhm @ 3A, 10V

3V @ 250µA

30nC @ 10V

290pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SIX3134KA-TP

Micro Commercial Co

MOSFET 2N-CH 20V 0.75A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 16V
Power - Max: 180mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

paquet: -

Stock9 576

-

20V

750mA

300mOhm @ 500mA, 4.5V

950mV @ 250µA

0.8nC @ 4.5V

33pF @ 16V

180mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

2N7002DWK-13

Diodes Incorporated

MOSFET 2N-CH 60V 0.261A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 261mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Power - Max: 330mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

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60V

261mA (Ta)

3Ohm @ 200mA, 10V

2V @ 250µA

1.04nC @ 10V

41pF @ 30V

330mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMP2045UFDB-13

Diodes Incorporated

MOSFET 2P-CH 20V 3.1A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 634pF @ 10V
Power - Max: 740mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

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-

20V

3.1A (Ta)

90mOhm @ 4A, 4.5V

1V @ 250µA

6.8nC @ 4.5V

634pF @ 10V

740mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

AOSD26313C

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 7A/5.7A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V, 32mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V, 1100pF @ 15V
Power - Max: 1.7W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

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30V

7A (Ta), 5.7A (Ta)

20mOhm @ 7A, 10V, 32mOhm @ 5.7A, 10V

2.3V @ 250µA, 2.2V @ 250µA

20nC @ 10V, 33nC @ 10V

600pF @ 15V, 1100pF @ 15V

1.7W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MSCSM120AM02CT6LIAG

Microchip Technology

SIC 2N-CH 1200V 947A SP6C LI

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 947A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 12mA
Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 36240pF @ 1000V
Power - Max: 3.75kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP6C LI

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1200V (1.2kV)

947A (Tc)

2.6mOhm @ 480A, 20V

2.8V @ 12mA

2784nC @ 20V

36240pF @ 1000V

3.75kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP6C LI

SH8MA4TB1

Rohm Semiconductor

MOSFET N/P-CH 30V 9A/8.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 21.4mOhm @ 9A, 10V, 29.6mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V, 19.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V, 890pF @ 15V
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

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Stock57 819

-

30V

9A (Ta), 8.5A (Ta)

21.4mOhm @ 9A, 10V, 29.6mOhm @ 8.5A, 10V

2.5V @ 1mA

15.5nC @ 10V, 19.6nC @ 10V

640pF @ 15V, 890pF @ 15V

2W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMN5L06VK-7-79

Diodes Incorporated

MOSFET 2N-CH 50V 0.28A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

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50V

280mA (Ta)

2Ohm @ 50mA, 5V

1.2V @ 250µA

-

50pF @ 25V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMN32D0LV-7

Diodes Incorporated

MOSFET 2N-CH 30V 0.68A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V
Power - Max: 480mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

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Stock7 500

-

30V

680mA (Ta)

1.2Ohm @ 100mA, 4V

1.2V @ 250µA

0.62nC @ 4.5V

44.8pF @ 15V

480mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

SIL6321-TP

Micro Commercial Co

MOSFET N/P-CH 30V 1A SOT23-6L

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1A
Rds On (Max) @ Id, Vgs: 320mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA, 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 15V, 1050pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6L

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30V

1A

320mOhm @ 1A, 10V

1.4V @ 250µA, 1.3V @ 250µA

-

1155pF @ 15V, 1050pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SOT-23-6L

UPA1793G-E1-AT

Renesas Electronics Corporation

MOSFET N/P-CH 20V 3A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 69mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V
Power - Max: 2W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-PSOP

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Logic Level Gate

20V

3A

69mOhm @ 1.5A, 4.5V

1.5V @ 1mA

3.1nC @ 4V

160pF @ 10V

2W

-

Surface Mount

8-SOIC (0.173", 4.40mm Width)

8-PSOP

DMC2025UFDBQ-7

Diodes Incorporated

MOSFET N/P-CH 20V 6A/3.5A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA, 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 15nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V, 642pF @ 10V
Power - Max: 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

paquet: -

Stock8 835

-

20V

6A (Ta), 3.5A (Ta)

25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V

1V @ 250µA, 1.4V @ 250µA

12.3nC @ 10V, 15nC @ 8V

486pF @ 10V, 642pF @ 10V

700mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)