Page 32 - Transistors - FET, MOSFET - Matrices | Produits à semiconducteurs discrets | Heisener Electronics
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Transistors - FET, MOSFET - Matrices

Dossiers 5 684
Page  32/203
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot BSD223P L6327
Infineon Technologies

MOSFET 2P-CH 20V 0.39A SOT363

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 390mA
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 390mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 15V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
paquet: 6-VSSOP, SC-88, SOT-363
Stock72 000
Logic Level Gate
20V
390mA
1.2 Ohm @ 390mA, 4.5V
1.2V @ 1.5µA
0.62nC @ 4.5V
56pF @ 15V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
hot IRF7751GTRPBF
Infineon Technologies

MOSFET 2P-CH 30V 4.5A 8TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
paquet: 8-TSSOP (0.173", 4.40mm Width)
Stock6 928
Logic Level Gate
30V
4.5A
35 mOhm @ 4.5A, 10V
2.5V @ 250µA
44nC @ 10V
1464pF @ 25V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
SIA936EDJ-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 4.5A SC-70

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 7.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-70-6 Dual
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
paquet: PowerPAK? SC-70-6 Dual
Stock7 024
Logic Level Gate
20V
4.5A
34 mOhm @ 4A, 4.5V
1.3V @ 250µA
17nC @ 10V
-
7.8W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Dual
PowerPAK? SC-70-6 Dual
SI6955ADQ-T1-E3
Vishay Siliconix

MOSFET 2P-CH 30V 2.5A 8-TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
paquet: 8-TSSOP (0.173", 4.40mm Width)
Stock3 776
Logic Level Gate
30V
2.5A
80 mOhm @ 2.9A, 10V
1V @ 250µA (Min)
8nC @ 5V
-
830mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot SI6925ADQ-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 3.3A 8-TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 800mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
paquet: 8-TSSOP (0.173", 4.40mm Width)
Stock387 024
Logic Level Gate
20V
3.3A
45 mOhm @ 3.9A, 4.5V
1.8V @ 250µA
6nC @ 4.5V
-
800mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot FDS6812A
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 6.7A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.7A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1082pF @ 10V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock56 232
Logic Level Gate
20V
6.7A
22 mOhm @ 6.7A, 4.5V
1.5V @ 250µA
19nC @ 4.5V
1082pF @ 10V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
CPH6635-TL-H
ON Semiconductor

MOSFET N/P-CH 30V/20V CPH6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 400mA, 1.5A
  • Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V
  • Power - Max: 800mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-CPH
paquet: SOT-23-6 Thin, TSOT-23-6
Stock4 128
Logic Level Gate
30V, 20V
400mA, 1.5A
3.7 Ohm @ 80mA, 4V
-
1.58nC @ 10V
7pF @ 10V
800mW
150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-CPH
BUK7K89-100EX
Nexperia USA Inc.

MOSFET 2N-CH 100V 13A LFPAK56

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 13A
  • Rds On (Max) @ Id, Vgs: 82.5 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 13.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 811pF @ 25V
  • Power - Max: 38W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
paquet: SOT-1205, 8-LFPAK56
Stock4 384
Standard
100V
13A
82.5 mOhm @ 5A, 10V
4V @ 1mA
13.6nC @ 10V
811pF @ 25V
38W
-
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
SQJ912AEP-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A
  • Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 9.7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1835pF @ 20V
  • Power - Max: 48W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
paquet: PowerPAK? SO-8 Dual
Stock4 704
Standard
40V
30A
9.3 mOhm @ 9.7A, 10V
2.5V @ 250µA
38nC @ 10V
1835pF @ 20V
48W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
IRF7506TRPBF
Infineon Technologies

MOSFET 2P-CH 30V 1.7A MICRO8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A
  • Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: Micro8?
paquet: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Stock90 792
Logic Level Gate
30V
1.7A
270 mOhm @ 1.2A, 10V
1V @ 250µA
11nC @ 10V
180pF @ 25V
1.25W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Micro8?
ALD1102ASAL
Advanced Linear Devices Inc.

MOSFET 2P-CH 10.6V 8SOIC

  • FET Type: 2 P-Channel (Dual) Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 270 Ohm @ 5V
  • Vgs(th) (Max) @ Id: 1.2V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock7 920
Standard
10.6V
-
270 Ohm @ 5V
1.2V @ 10µA
-
-
500mW
0°C ~ 70°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot US6M1TR
Rohm Semiconductor

MOSFET N/P-CH 30V/20V TUMT6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A, 1A
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: TUMT6
paquet: 6-SMD, Flat Leads
Stock321 156
Logic Level Gate
30V, 20V
1.4A, 1A
240 mOhm @ 1.4A, 10V
2.5V @ 1mA
2nC @ 5V
70pF @ 10V
1W
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
TUMT6
hot DMP4050SSD-13
Diodes Incorporated

MOSFET 2P-CH 40V 4A 8SO

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 674pF @ 20V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock604 284
Standard
40V
4A
50 mOhm @ 6A, 10V
3V @ 250µA
13.9nC @ 10V
674pF @ 20V
1.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot DMN2215UDM-7
Diodes Incorporated

MOSFET 2N-CH 20V 2A SOT-26

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2A
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 188pF @ 10V
  • Power - Max: 650mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
paquet: SOT-23-6
Stock596 016
Logic Level Gate
20V
2A
100 mOhm @ 2.5A, 4.5V
1V @ 250µA
-
188pF @ 10V
650mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
UPA2450CTL-E1-A
Renesas Electronics Corporation

MOSFET 2N-CH 20V 8.6A 6HWSON

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8.6A
  • Rds On (Max) @ Id, Vgs: 17.5mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 564pF @ 10V
  • Power - Max: 700mW
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 6-VFDFN Exposed Pad
  • Supplier Device Package: 6-HWSON
paquet: -
Request a Quote
Logic Level Gate
20V
8.6A
17.5mOhm @ 4A, 4.5V
1.5V @ 1mA
6nC @ 4V
564pF @ 10V
700mW
-
Surface Mount
6-VFDFN Exposed Pad
6-HWSON
DMP3164LVT-13
Diodes Incorporated

MOSFET 2P-CH 2.8A TSOT26

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
  • Rds On (Max) @ Id, Vgs: 95mOhm @ 2.7A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
paquet: -
Request a Quote
-
-
2.8A (Ta)
95mOhm @ 2.7A, 10V
2.1V @ 250µA
-
-
-
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
SSFQ3805
Good-Ark Semiconductor

MOSFET 2P-CH 30V 18.4A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2510pF @ 15V
  • Power - Max: 8.9W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
paquet: -
Stock17 598
-
30V
18.4A (Tc)
16mOhm @ 8A, 10V
2.5V @ 250µA
21nC @ 4.5V
2510pF @ 15V
8.9W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
MSCC60AM23C4AG
Microchip Technology

MOSFET 2N-CH 600V 81A SP4

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP4
paquet: -
Request a Quote
-
600V
81A (Tc)
-
-
-
-
-
-
Chassis Mount
Module
SP4
AOE6930
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 22A/85A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc), 85A (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 65nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 15V, 5560pF @ 15V
  • Power - Max: 24W, 75W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-DFN (5x6)
paquet: -
Stock8 808
-
30V
22A (Tc), 85A (Tc)
4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V
2.1V @ 250µA, 1.9V @ 250µA
15nC @ 4.5V, 65nC @ 4.5V
1075pF @ 15V, 5560pF @ 15V
24W, 75W
-55°C ~ 150°C (TJ)
Surface Mount
8-VDFN Exposed Pad
8-DFN (5x6)
VEC2401-TL-E
onsemi

NCH+NCH 2.5V DRIVE SERIES

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
UPA602T-T1-A
Renesas Electronics Corporation

MOSFET 2N-CH 50V 0.1A SC59

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 25Ohm @ 10mA, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 5V
  • Power - Max: 300mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-59-6
  • Supplier Device Package: SC-59
paquet: -
Request a Quote
Logic Level Gate
50V
100mA
25Ohm @ 10mA, 10V
1.8V @ 1µA
-
16pF @ 5V
300mW
150°C (TJ)
Surface Mount
SC-59-6
SC-59
G120P03S2
Goford Semiconductor

MOSFET 30V 16A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2835pF @ 15V
  • Power - Max: 1.4W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
paquet: -
Stock12 000
-
30V
16A (Tc)
14mOhm @ 10A, 10V
2.5V @ 250µA
35nC @ 10V
2835pF @ 15V
1.4W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
G220P03S2
Goford Semiconductor

MOSFET P+P-CH 30V 9A SOP-8L DUAL

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1277pF @ 15V
  • Power - Max: 2.7W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
paquet: -
Stock11 850
-
30V
9A (Tc)
22mOhm @ 3A, 10V
2V @ 250µA
24.5nC @ 10V
1277pF @ 15V
2.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
BSO303PHXUMA1
Infineon Technologies

MOSFET 2P-CH 30V 7A 8DSO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2678pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
paquet: -
Request a Quote
Logic Level Gate
30V
7A
21mOhm @ 8.2A, 10V
2V @ 100µA
49nC @ 10V
2678pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8
FF33MR12W1M1HPB11BPSA1
Infineon Technologies

MOSFET

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Stock84
-
-
-
-
-
-
-
-
-
-
-
-
G1NP02LLE
Goford Semiconductor

MOSFET 20V 1.3A/1.1A SOT23-6L

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), 1.1A (Tc)
  • Rds On (Max) @ Id, Vgs: 210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA, 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V, 1.22nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 10V, 177pF @ 10V
  • Power - Max: 1.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6L
paquet: -
Stock9 000
-
20V
1.3A (Tc), 1.1A (Tc)
210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V
1V @ 250µA, 800mV @ 250µA
1nC @ 4.5V, 1.22nC @ 4.5V
146pF @ 10V, 177pF @ 10V
1.25W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6L
MSCSM70AM025CT6LIAG
Microchip Technology

SIC 2N-CH 700V 689A SP6C LI

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 689A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 24mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V
  • Power - Max: 1882W (Tc)
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6C LI
paquet: -
Request a Quote
-
700V
689A (Tc)
3.2mOhm @ 240A, 20V
2.4V @ 24mA (Typ)
1290nC @ 20V
27000pF @ 700V
1882W (Tc)
-
Chassis Mount
Module
SP6C LI
DMT10H032LDV-7
Diodes Incorporated

MOSFET 2N-CH 100V 18A PWRDI3333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
  • Power - Max: 1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (Type UXC)
paquet: -
Request a Quote
-
100V
18A (Tc)
36mOhm @ 10A, 10V
2.5V @ 250µA
11.9nC @ 10V
683pF @ 50V
1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8 (Type UXC)