Page 135 - Transistors - FET, MOSFET - Matrices | Produits à semiconducteurs discrets

Référence	Fabricant	Description	paquet	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7757TR	Infineon Technologies	MOSFET 2N-CH 20V 4.8A TSSOP-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.8A Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.8A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 15V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	paquet: 8-TSSOP (0.173", 4.40mm Width)	Stock45 300	Logic Level Gate	20V	4.8A	35 mOhm @ 4.8A, 4.5V	1.2V @ 250µA	23nC @ 4.5V	1340pF @ 15V	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
IRF5810	Infineon Technologies	MOSFET 2P-CH 20V 2.9A 6TSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 16V Power - Max: 960mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	paquet: SOT-23-6 Thin, TSOT-23-6	Stock16 800	Logic Level Gate	20V	2.9A	90 mOhm @ 2.9A, 4.5V	1.2V @ 250µA	9.6nC @ 4.5V	650pF @ 16V	960mW	-	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
IRF7750TR	Infineon Technologies	MOSFET 2P-CH 20V 4.7A 8-TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.7A Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	paquet: 8-TSSOP (0.173", 4.40mm Width)	Stock36 048	Logic Level Gate	20V	4.7A	30 mOhm @ 4.7A, 4.5V	1.2V @ 250µA	39nC @ 5V	1700pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
AOC2802_001	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 4WLCSP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 35 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-UFBGA, WLCSP Supplier Device Package: 4-WLCSP (1.57x1.57)	paquet: 4-UFBGA, WLCSP	Stock2 752	Standard	20V	6A	35 mOhm @ 3A, 4.5V	1.5V @ 250µA	10.4nC @ 4.5V	1200pF @ 10V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	4-UFBGA, WLCSP	4-WLCSP (1.57x1.57)
SI9945AEY-T1	Vishay Siliconix	MOSFET 2N-CH 60V 3.7A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.7A Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	paquet: 8-SOIC (0.154", 3.90mm Width)	Stock16 668	Logic Level Gate	60V	3.7A	80 mOhm @ 3.7A, 10V	3V @ 250µA	20nC @ 10V	-	2.4W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMN5L06VA-7	Diodes Incorporated	MOSFET 2N-CH 50V 0.28A SOT-563 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 200mA, 2.7V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 150mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	paquet: SOT-563, SOT-666	Stock12 756	Logic Level Gate	50V	280mA	3 Ohm @ 200mA, 2.7V	1.2V @ 250µA	-	50pF @ 25V	150mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
FDM3300NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 10A MCRFET FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 23 mOhm @ 10A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: Power33	paquet: 8-PowerVDFN	Stock39 468	Logic Level Gate	20V	10A	23 mOhm @ 10A, 4.5V	1.5V @ 250µA	17nC @ 4.5V	1610pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	Power33
FDG6301N_D87Z	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 0.22A SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 220mA Rds On (Max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	paquet: 6-TSSOP, SC-88, SOT-363	Stock2 960	Logic Level Gate	25V	220mA	4 Ohm @ 220mA, 4.5V	1.5V @ 250µA	0.4nC @ 4.5V	9.5pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
APTC60AM42F2G	Microsemi Corporation	MOSFET 2N-CH 600V 66A SP2 FET Type: 2 N Channel (Phase Leg) FET Feature: Super Junction Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 66A Rds On (Max) @ Id, Vgs: 42 mOhm @ 33A, 10V Vgs(th) (Max) @ Id: 5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 510nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14600pF @ 25V Power - Max: 416W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP2 Supplier Device Package: SP2	paquet: SP2	Stock7 936	Super Junction	600V	66A	42 mOhm @ 33A, 10V	5V @ 6mA	510nC @ 10V	14600pF @ 25V	416W	-40°C ~ 150°C (TJ)	Chassis Mount	SP2	SP2
TC2320TG-G	Microchip Technology	MOSFET N/P-CH 200V 8SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	paquet: 8-SOIC (0.154", 3.90mm Width)	Stock7 464	Standard	200V	-	7 Ohm @ 1A, 10V	2V @ 1mA	-	110pF @ 25V	-	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
ECH8663R-TL-H	ON Semiconductor	MOSFET 2N-CH 30V 8A ECH8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 20.5 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	paquet: 8-SMD, Flat Lead	Stock6 128	Logic Level Gate	30V	8A	20.5 mOhm @ 4A, 4.5V	-	12.3nC @ 4.5V	-	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-ECH
SI4200DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 25V 8A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.3A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 13V Power - Max: 2.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	paquet: 8-SOIC (0.154", 3.90mm Width)	Stock3 520	Logic Level Gate	25V	8A	25 mOhm @ 7.3A, 10V	2.2V @ 250µA	12nC @ 10V	415pF @ 13V	2.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FF23MR12W1M1B11BOMA1	Infineon Technologies Industrial Power and Controls Americas	MOSFET MODULE HALF 1200V 50A FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 23 mOhm @ 50A, 15V Vgs(th) (Max) @ Id: 5.55V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 800V Power - Max: 20mW Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	paquet: Module	Stock3 824	Standard	1200V (1.2kV)	50A	23 mOhm @ 50A, 15V	5.55V @ 20mA	125nC @ 15V	3950pF @ 800V	20mW	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
BUK7K5R6-30E,115	Nexperia USA Inc.	MOSFET 2N-CH 30V 40A LFPAK56D FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 29.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1969pF @ 25V Power - Max: 64W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	paquet: SOT-1205, 8-LFPAK56	Stock4 400	Standard	30V	40A	5.6 mOhm @ 25A, 10V	4V @ 1mA	29.7nC @ 10V	1969pF @ 25V	64W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
BSC072N03LD G	Infineon Technologies	MOSFET 2N-CH 30V 11.5A 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.5A Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 15V Power - Max: 57W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8	paquet: 8-PowerVDFN	Stock195 150	Logic Level Gate	30V	11.5A	7.2 mOhm @ 20A, 10V	2.2V @ 250µA	41nC @ 10V	3500pF @ 15V	57W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8
UPA2560T1H-T1-AT	Renesas Electronics Corporation	MOSFET 2N-CH 30V 4.5A 8VSOF FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V Power - Max: 2.2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-VSOF	paquet: -	Request a Quote	Logic Level Gate	30V	4.5A	50mOhm @ 2A, 10V	2.5V @ 1mA	6.6nC @ 10V	310pF @ 10V	2.2W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-VSOF
ZXMD63C02XTA	Diodes Incorporated	MOSFET N/P-CH 20V 8-MSOP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.4A, 1.7A Rds On (Max) @ Id, Vgs: 130mOhm @ 1.7A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 15V Power - Max: 1.04W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	paquet: -	Request a Quote	Logic Level Gate	20V	2.4A, 1.7A	130mOhm @ 1.7A, 4.5V	700mV @ 250µA	6nC @ 4.5V	350pF @ 15V	1.04W	-	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
FDB3652SB82059	Fairchild Semiconductor	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	paquet: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
IQE008N03LM5SCATMA1	Infineon Technologies	TRENCH <= 40V FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: PG-WHSON-8	paquet: -	Request a Quote	-	30V	-	-	-	-	-	-	-	Surface Mount	8-PowerWDFN	PG-WHSON-8
F423MR12W1M1B76BPSA1	Infineon Technologies	SIC 4N-CH 1200V 45A AG-EASY1B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 45A (Tj) Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V Vgs(th) (Max) @ Id: 5.55V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1B-2	paquet: -	Request a Quote	-	1200V (1.2kV)	45A (Tj)	22.5mOhm @ 50A, 15V	5.55V @ 20mA	124nC @ 15V	3680pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-EASY1B-2
MCX3152P-TP	Micro Commercial Co	MOSFET 2P-CH 20V 0.66A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 660mA Rds On (Max) @ Id, Vgs: 700mOhm @ 660mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	paquet: -	Request a Quote	-	20V	660mA	700mOhm @ 660mA, 4.5V	1V @ 250µA	2.5nC @ 4.5V	175pF @ 16V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
NXH010P90MNF1PG	onsemi	SIC 2N-CH 900V 154A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 154A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V Vgs(th) (Max) @ Id: 4.3V @ 40mA Gate Charge (Qg) (Max) @ Vgs: 546.4nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 7007pF @ 450V Power - Max: 328W (Tj) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	paquet: -	Request a Quote	-	900V	154A (Tc)	14mOhm @ 100A, 15V	4.3V @ 40mA	546.4nC @ 15V	7007pF @ 450V	328W (Tj)	-40°C ~ 150°C (TJ)	Chassis Mount	Module	-
UPA1760G-E1-AT	Renesas	MOSFET 2N-CH 30V 8A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V Power - Max: 2W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP	paquet: -	Request a Quote	-	30V	8A (Ta)	26mOhm @ 4A, 10V	2.5V @ 1mA	14nC @ 10V	760pF @ 10V	2W (Ta)	150°C	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP
UPA2350T1G-E4-A	Renesas Electronics Corporation	MOSFET 2N-CH 20V 6A 4FLIPCHIP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 542pF @ 10V Power - Max: 1.3W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 4-XBGA, 4-FCBGA Supplier Device Package: 4-FlipChip	paquet: -	Request a Quote	Logic Level Gate	20V	6A	35mOhm @ 3A, 4.5V	1.5V @ 1mA	8.6nC @ 4V	542pF @ 10V	1.3W	-	Surface Mount	4-XBGA, 4-FCBGA	4-FlipChip
DMT3020LFDBQ-7	Diodes Incorporated	MOSFET 2N-CH 30V 7.7A 6UDFN FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	paquet: -	Stock7 950	-	30V	7.7A (Ta)	20mOhm @ 9A, 10V	2.5V @ 250µA	7nC @ 10V	393pF @ 15V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
MSCSM120TLM16C3AG	Microchip Technology	SIC 4N-CH 1200V 173A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.8V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Power - Max: 745W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	paquet: -	Request a Quote	-	1200V (1.2kV)	173A (Tc)	16mOhm @ 80A, 20V	2.8V @ 2mA	464nC @ 20V	6040pF @ 1000V	745W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
MSCSM70HM05CAG	Microchip Technology	SIC MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	paquet: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
IAUC60N04S6N050HATMA1	Infineon Technologies	MOSFET 2N-CH 40V 60A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 3V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1027pF @ 25V Power - Max: 52W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-57	paquet: -	Stock13 599	-	40V	60A (Tj)	5mOhm @ 30A, 10V	3V @ 13µA	17nC @ 10V	1027pF @ 25V	52W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-57

IRF7757TR

Infineon Technologies

MOSFET 2N-CH 20V 4.8A TSSOP-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 15V
Power - Max: 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

paquet: 8-TSSOP (0.173", 4.40mm Width)

Stock45 300

Logic Level Gate

20V

4.8A

35 mOhm @ 4.8A, 4.5V

1.2V @ 250µA

23nC @ 4.5V

1340pF @ 15V

1.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

IRF5810

Infineon Technologies

MOSFET 2P-CH 20V 2.9A 6TSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 16V
Power - Max: 960mW
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

paquet: SOT-23-6 Thin, TSOT-23-6

Stock16 800

Logic Level Gate

20V

2.9A

90 mOhm @ 2.9A, 4.5V

1.2V @ 250µA

9.6nC @ 4.5V

650pF @ 16V

960mW

-

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

IRF7750TR

Infineon Technologies

MOSFET 2P-CH 20V 4.7A 8-TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

paquet: 8-TSSOP (0.173", 4.40mm Width)

Stock36 048

Logic Level Gate

20V

4.7A

30 mOhm @ 4.7A, 4.5V

1.2V @ 250µA

39nC @ 5V

1700pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

AOC2802_001

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 4WLCSP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA, WLCSP
Supplier Device Package: 4-WLCSP (1.57x1.57)

paquet: 4-UFBGA, WLCSP

Stock2 752

Standard

20V

6A

35 mOhm @ 3A, 4.5V

1.5V @ 250µA

10.4nC @ 4.5V

1200pF @ 10V

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

4-UFBGA, WLCSP

4-WLCSP (1.57x1.57)

SI9945AEY-T1

Vishay Siliconix

MOSFET 2N-CH 60V 3.7A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2.4W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

paquet: 8-SOIC (0.154", 3.90mm Width)

Stock16 668

Logic Level Gate

60V

3.7A

80 mOhm @ 3.7A, 10V

3V @ 250µA

20nC @ 10V

-

2.4W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMN5L06VA-7

Diodes Incorporated

MOSFET 2N-CH 50V 0.28A SOT-563

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 280mA
Rds On (Max) @ Id, Vgs: 3 Ohm @ 200mA, 2.7V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 150mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

paquet: SOT-563, SOT-666

Stock12 756

Logic Level Gate

50V

280mA

3 Ohm @ 200mA, 2.7V

1.2V @ 250µA

-

50pF @ 25V

150mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

FDM3300NZ

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 10A MCRFET

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 23 mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: Power33

paquet: 8-PowerVDFN

Stock39 468

Logic Level Gate

20V

10A

23 mOhm @ 10A, 4.5V

1.5V @ 250µA

17nC @ 4.5V

1610pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

Power33

FDG6301N_D87Z

Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 0.22A SC70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 220mA
Rds On (Max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

paquet: 6-TSSOP, SC-88, SOT-363

Stock2 960

Logic Level Gate

25V

220mA

4 Ohm @ 220mA, 4.5V

1.5V @ 250µA

0.4nC @ 4.5V

9.5pF @ 10V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

APTC60AM42F2G

Microsemi Corporation

MOSFET 2N-CH 600V 66A SP2

FET Type: 2 N Channel (Phase Leg)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 66A
Rds On (Max) @ Id, Vgs: 42 mOhm @ 33A, 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 510nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14600pF @ 25V
Power - Max: 416W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP2
Supplier Device Package: SP2

paquet: SP2

Stock7 936

Super Junction

600V

66A

42 mOhm @ 33A, 10V

5V @ 6mA

510nC @ 10V

14600pF @ 25V

416W

-40°C ~ 150°C (TJ)

Chassis Mount

SP2

TC2320TG-G

Microchip Technology

MOSFET N/P-CH 200V 8SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

paquet: 8-SOIC (0.154", 3.90mm Width)

Stock7 464

Standard

200V

-

7 Ohm @ 1A, 10V

2V @ 1mA

-

110pF @ 25V

-

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

ECH8663R-TL-H

ON Semiconductor

MOSFET 2N-CH 30V 8A ECH8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 20.5 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-ECH

paquet: 8-SMD, Flat Lead

Stock6 128

Logic Level Gate

30V

8A

20.5 mOhm @ 4A, 4.5V

-

12.3nC @ 4.5V

-

1.5W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-ECH

SI4200DY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 25V 8A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 13V
Power - Max: 2.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

paquet: 8-SOIC (0.154", 3.90mm Width)

Stock3 520

Logic Level Gate

25V

8A

25 mOhm @ 7.3A, 10V

2.2V @ 250µA

12nC @ 10V

415pF @ 13V

2.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FF23MR12W1M1B11BOMA1

Infineon Technologies Industrial Power and Controls Americas

MOSFET MODULE HALF 1200V 50A

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 23 mOhm @ 50A, 15V
Vgs(th) (Max) @ Id: 5.55V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 800V
Power - Max: 20mW
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

paquet: Module

Stock3 824

Standard

1200V (1.2kV)

50A

23 mOhm @ 50A, 15V

5.55V @ 20mA

125nC @ 15V

3950pF @ 800V

20mW

-40°C ~ 150°C (TJ)

Chassis Mount

Module

BUK7K5R6-30E,115

Nexperia USA Inc.

MOSFET 2N-CH 30V 40A LFPAK56D

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 29.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1969pF @ 25V
Power - Max: 64W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

paquet: SOT-1205, 8-LFPAK56

Stock4 400

Standard

30V

40A

5.6 mOhm @ 25A, 10V

4V @ 1mA

29.7nC @ 10V

1969pF @ 25V

64W

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

BSC072N03LD G

Infineon Technologies

MOSFET 2N-CH 30V 11.5A 8TDSON

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.5A
Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 15V
Power - Max: 57W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8

paquet: 8-PowerVDFN

Stock195 150

Logic Level Gate

30V

11.5A

7.2 mOhm @ 20A, 10V

2.2V @ 250µA

41nC @ 10V

3500pF @ 15V

57W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8

UPA2560T1H-T1-AT

Renesas Electronics Corporation

MOSFET 2N-CH 30V 4.5A 8VSOF

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
Power - Max: 2.2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-VSOF

paquet: -

Request a Quote

Logic Level Gate

30V

4.5A

50mOhm @ 2A, 10V

2.5V @ 1mA

6.6nC @ 10V

310pF @ 10V

2.2W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-VSOF

ZXMD63C02XTA

Diodes Incorporated

MOSFET N/P-CH 20V 8-MSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.4A, 1.7A
Rds On (Max) @ Id, Vgs: 130mOhm @ 1.7A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 15V
Power - Max: 1.04W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

paquet: -

Request a Quote

Logic Level Gate

20V

2.4A, 1.7A

130mOhm @ 1.7A, 4.5V

700mV @ 250µA

6nC @ 4.5V

350pF @ 15V

1.04W

-

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

FDB3652SB82059

Fairchild Semiconductor

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

paquet: -

Request a Quote

-

IQE008N03LM5SCATMA1

Infineon Technologies

TRENCH <= 40V

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: PG-WHSON-8

paquet: -

Request a Quote

-

30V

-

Surface Mount

8-PowerWDFN

PG-WHSON-8

F423MR12W1M1B76BPSA1

Infineon Technologies

SIC 4N-CH 1200V 45A AG-EASY1B

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 45A (Tj)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V
Vgs(th) (Max) @ Id: 5.55V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1B-2

paquet: -

Request a Quote

-

1200V (1.2kV)

45A (Tj)

22.5mOhm @ 50A, 15V

5.55V @ 20mA

124nC @ 15V

3680pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-EASY1B-2

MCX3152P-TP

Micro Commercial Co

MOSFET 2P-CH 20V 0.66A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA
Rds On (Max) @ Id, Vgs: 700mOhm @ 660mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

paquet: -

Request a Quote

-

20V

660mA

700mOhm @ 660mA, 4.5V

1V @ 250µA

2.5nC @ 4.5V

175pF @ 16V

150mW

150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

NXH010P90MNF1PG

onsemi

SIC 2N-CH 900V 154A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
Gate Charge (Qg) (Max) @ Vgs: 546.4nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 7007pF @ 450V
Power - Max: 328W (Tj)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

paquet: -

Request a Quote

-

900V

154A (Tc)

14mOhm @ 100A, 15V

4.3V @ 40mA

546.4nC @ 15V

7007pF @ 450V

328W (Tj)

-40°C ~ 150°C (TJ)

Chassis Mount

Module

-

UPA1760G-E1-AT

Renesas

MOSFET 2N-CH 30V 8A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V
Power - Max: 2W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP

paquet: -

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30V

8A (Ta)

26mOhm @ 4A, 10V

2.5V @ 1mA

14nC @ 10V

760pF @ 10V

2W (Ta)

150°C

Surface Mount

8-SOIC (0.173", 4.40mm Width)

8-SOP

UPA2350T1G-E4-A

Renesas Electronics Corporation

MOSFET 2N-CH 20V 6A 4FLIPCHIP

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 542pF @ 10V
Power - Max: 1.3W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 4-XBGA, 4-FCBGA
Supplier Device Package: 4-FlipChip

paquet: -

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Logic Level Gate

20V

6A

35mOhm @ 3A, 4.5V

1.5V @ 1mA

8.6nC @ 4V

542pF @ 10V

1.3W

-

Surface Mount

4-XBGA, 4-FCBGA

4-FlipChip

DMT3020LFDBQ-7

Diodes Incorporated

MOSFET 2N-CH 30V 7.7A 6UDFN

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

paquet: -

Stock7 950

-

30V

7.7A (Ta)

20mOhm @ 9A, 10V

2.5V @ 250µA

7nC @ 10V

393pF @ 15V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

MSCSM120TLM16C3AG

Microchip Technology

SIC 4N-CH 1200V 173A SP3F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Power - Max: 745W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F

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-

1200V (1.2kV)

173A (Tc)

16mOhm @ 80A, 20V

2.8V @ 2mA

464nC @ 20V

6040pF @ 1000V

745W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP3F

MSCSM70HM05CAG

Microchip Technology

SIC MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

paquet: -

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-

IAUC60N04S6N050HATMA1

Infineon Technologies

MOSFET 2N-CH 40V 60A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 3V @ 13µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1027pF @ 25V
Power - Max: 52W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-57

paquet: -

Stock13 599

-

40V

60A (Tj)

5mOhm @ 30A, 10V

3V @ 13µA

17nC @ 10V

1027pF @ 25V

52W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-57