Page 137 - Transistors - FET, MOSFET - Matrices | Produits à semiconducteurs discrets | Heisener Electronics
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Transistors - FET, MOSFET - Matrices

Dossiers 5 684
Page  137/203
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot AON6884L
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 40V 8DFN5X6

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Stock17 136
-
-
-
-
-
-
-
-
-
-
-
-
UPA2385T1P-E1-A
Renesas Electronics America

MOSFET N-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Stock3 328
-
-
-
-
-
-
-
-
-
-
-
-
hot TPC8405(TE12L,Q,M)
Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V 6A/4.5A 8SOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A, 4.5A
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP (5.5x6.0)
paquet: 8-SOIC (0.173", 4.40mm Width)
Stock44 280
Logic Level Gate
30V
6A, 4.5A
26 mOhm @ 3A, 10V
2V @ 1mA
27nC @ 10V
1240pF @ 10V
450mW
150°C (TJ)
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP (5.5x6.0)
hot SI5920DC-T1-E3
Vishay Siliconix

MOSFET 2N-CH 8V 4A 1206-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 32 mOhm @ 6.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 4V
  • Power - Max: 3.12W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET?
paquet: 8-SMD, Flat Lead
Stock244 224
Logic Level Gate
8V
4A
32 mOhm @ 6.8A, 4.5V
1V @ 250µA
12nC @ 5V
680pF @ 4V
3.12W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
1206-8 ChipFET?
hot IXTL2X200N085T
IXYS

MOSFET 2N-CH 85V 112A I5-PAK

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 85V
  • Current - Continuous Drain (Id) @ 25°C: 112A
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
  • Power - Max: 150W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUSi5-Pak?
  • Supplier Device Package: ISOPLUSi5-Pak?
paquet: ISOPLUSi5-Pak?
Stock4 592
Standard
85V
112A
6 mOhm @ 50A, 10V
4V @ 250µA
152nC @ 10V
7600pF @ 25V
150W
-55°C ~ 175°C (TJ)
Through Hole
ISOPLUSi5-Pak?
ISOPLUSi5-Pak?
BSG0810NDIATMA1
Infineon Technologies

MOSFET 2N-CH 25V 19A/39A 8TISON

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 19A, 39A
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 155°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PG-TISON-8
paquet: 8-PowerTDFN
Stock6 256
Logic Level Gate, 4.5V Drive
25V
19A, 39A
3 mOhm @ 20A, 10V
2V @ 250µA
8.4nC @ 4.5V
1040pF @ 12V
2.5W
-55°C ~ 155°C (TJ)
Surface Mount
8-PowerTDFN
PG-TISON-8
AUIRF7303QTR
Infineon Technologies

MOSFET 2N-CH 30V 5.3A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 25V
  • Power - Max: 2.4W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC
  • Supplier Device Package: 8-SO
paquet: 8-SOIC
Stock3 520
Logic Level Gate
30V
5.3A
50 mOhm @ 2.7A, 10V
3V @ 100µA
21nC @ 10V
515pF @ 25V
2.4W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC
8-SO
FMM150-0075X2F
IXYS

MOSFET 2N-CH 75V 120A I4-PAC-5

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 120A
  • Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
  • Power - Max: 170W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5
  • Supplier Device Package: ISOPLUS i4-PAC?
paquet: i4-Pac?-5
Stock3 328
Standard
75V
120A
5.8 mOhm @ 100A, 10V
4V @ 250µA
178nC @ 10V
10500pF @ 25V
170W
-55°C ~ 175°C (TJ)
Through Hole
i4-Pac?-5
ISOPLUS i4-PAC?
ALD210808SCL
Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 0.08A 16SOIC

  • FET Type: 4 N-Channel, Matched Pair
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 80mA
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 20mV @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
paquet: 16-SOIC (0.154", 3.90mm Width)
Stock4 256
Logic Level Gate
10.6V
80mA
-
20mV @ 10µA
-
-
500mW
0°C ~ 70°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
ECH8654-TL-HQ
ON Semiconductor

MOSFET 2P-CH 20V 5A ECH8

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-ECH
paquet: 8-SMD, Flat Lead
Stock7 952
-
-
-
-
-
-
-
-
-
Surface Mount
8-SMD, Flat Lead
8-ECH
EFC6611R-TF
ON Semiconductor

MOSFET 2N-CH 12V 27A EFCP

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2.5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: 6-CSP (1.77x3.54)
paquet: 6-SMD, No Lead
Stock2 240
Logic Level Gate, 2.5V Drive
-
-
-
-
100nC @ 4.5V
-
2.5W
150°C (TJ)
Surface Mount
6-SMD, No Lead
6-CSP (1.77x3.54)
MCH6601-TL-E
ON Semiconductor

MOSFET 2P-CH 30V 0.2A MCPH6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 200mA
  • Rds On (Max) @ Id, Vgs: 10.4 Ohm @ 50mA, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7.5pF @ 10V
  • Power - Max: 800mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: 6-MCPH
paquet: 6-SMD, Flat Leads
Stock5 904
Logic Level Gate
30V
200mA
10.4 Ohm @ 50mA, 4V
-
1.43nC @ 10V
7.5pF @ 10V
800mW
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
6-MCPH
DMHC10H170SFJ-13
Diodes Incorporated

MOSFET 2N/2P-CH 100V DFN5045-12

  • FET Type: 2 N and 2 P-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.3A
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V
  • Power - Max: 2.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-VDFN Exposed Pad
  • Supplier Device Package: V-DFN5045-12
paquet: 12-VDFN Exposed Pad
Stock5 888
Standard
100V
2.9A, 2.3A
160 mOhm @ 5A, 10V
3V @ 250µA
9.7nC @ 10V
1167pF @ 25V
2.1W
-55°C ~ 150°C (TJ)
Surface Mount
12-VDFN Exposed Pad
V-DFN5045-12
FDMD8260L
Fairchild/ON Semiconductor

MOSFET 2N-CH 60V 6-MLP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 15A
  • Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5245pF @ 30V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-PowerWDFN
  • Supplier Device Package: 12-Power3.3x5
paquet: 12-PowerWDFN
Stock7 616
Standard
60V
15A
5.8 mOhm @ 15A, 10V
3V @ 250µA
68nC @ 10V
5245pF @ 30V
1W
-55°C ~ 150°C (TJ)
Surface Mount
12-PowerWDFN
12-Power3.3x5
SQJ500AEP-T1_GE3
Vishay Siliconix

MOSFET N/P CHAN 40V SO8L DUAL

  • FET Type: N and P-Channel
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 20V
  • Power - Max: 48W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
paquet: PowerPAK? SO-8 Dual
Stock3 552
-
40V
30A (Tc)
27 mOhm @ 6A, 10V
2.3V @ 250µA
38.1nC @ 10V
1850pF @ 20V
48W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
SI5933CDC-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 3.7A 1206-8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A
  • Rds On (Max) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 276pF @ 10V
  • Power - Max: 2.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET?
paquet: 8-SMD, Flat Lead
Stock4 336
Standard
20V
3.7A
144 mOhm @ 2.5A, 4.5V
1V @ 250µA
6.8nC @ 5V
276pF @ 10V
2.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
1206-8 ChipFET?
hot 2N7002VC-7
Diodes Incorporated

MOSFET 2N-CH 60V 0.28A SOT-563

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 280mA
  • Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 150mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
paquet: SOT-563, SOT-666
Stock1 764 000
Standard
60V
280mA
7.5 Ohm @ 50mA, 5V
2.5V @ 250µA
-
50pF @ 25V
150mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
hot AO4629
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 6A/5.5A 8SOIC

  • FET Type: N and P-Channel, Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A, 5.5A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock664 392
Logic Level Gate
30V
6A, 5.5A
30 mOhm @ 6A, 10V
2.4V @ 250µA
6.3nC @ 10V
310pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot NTMD4N03R2G
ON Semiconductor

MOSFET 2N-CH 30V 4A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 20V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock2 695 548
Logic Level Gate
30V
4A
60 mOhm @ 4A, 10V
3V @ 250µA
16nC @ 10V
400pF @ 20V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SQ4532AEY-T1_BE3
Vishay Siliconix

MOSFET N/P-CH 30V 7.3A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc)
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V
  • Power - Max: 3.3W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
paquet: -
Stock1 365
-
30V
7.3A (Tc), 5.3A (Tc)
31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
2.5V @ 250µA
7.8nC @ 10V, 10.2nC @ 10V
535pF @ 15V, 528pF @ 15V
3.3W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SIL2308-TP-HF
Micro Commercial Co

MOSFET 20V 5A/4A SOT23-6L

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5A, 4A
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 4.5V, 90mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V, 12nC @ 2.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 8V, 405pF @ 10V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6L
paquet: -
Request a Quote
-
20V
5A, 4A
38mOhm @ 4.5A, 4.5V, 90mOhm @ 500mA, 4.5V
1V @ 250µA
11nC @ 4.5V, 12nC @ 2.5V
800pF @ 8V, 405pF @ 10V
-
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6L
DMTH4M95SPSQ-13-01
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
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-
-
-
-
-
-
-
-
-
-
-
-
3LN04SS-TL-H-SY
Sanyo

MOSFET N-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
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-
-
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DMC21D1UDA-7B
Diodes Incorporated

MOSFET N/P-CH 20V 0.455A 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 455mA (Ta), 328mA (Ta)
  • Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.41nC @ 4.5V, 0.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 15V, 28.5pF @ 15V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: X2-DFN0806-6
paquet: -
Stock26 316
-
20V
455mA (Ta), 328mA (Ta)
990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
1V @ 250µA
0.41nC @ 4.5V, 0.4nC @ 4.5V
31pF @ 15V, 28.5pF @ 15V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-SMD, No Lead
X2-DFN0806-6
G2K3N10L6
Goford Semiconductor

MOSFET 2N-CH 100V 3A SOT23-6L

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Rds On (Max) @ Id, Vgs: 220mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 50V
  • Power - Max: 1.67W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6L
paquet: -
Stock12 132
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100V
3A (Tc)
220mOhm @ 2A, 10V
2.2V @ 250µA
4.8nC @ 4.5V
536pF @ 50V
1.67W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6L
AONX36322
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 21A/55A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 55A (Tc), 38A (Ta), 85A (Tc)
  • Rds On (Max) @ Id, Vgs: 4.95mOhm @ 20A, 10V, 1.35mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1145pF @ 15V, 4175pF @ 15V
  • Power - Max: 3.5W (Ta), 24W (Tc), 3.5W (Ta), 52W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-DFN (5x6)
paquet: -
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30V
21A (Ta), 55A (Tc), 38A (Ta), 85A (Tc)
4.95mOhm @ 20A, 10V, 1.35mOhm @ 20A, 10V
2.2V @ 250µA, 1.9V @ 250µA
25nC @ 10V, 100nC @ 10V
1145pF @ 15V, 4175pF @ 15V
3.5W (Ta), 24W (Tc), 3.5W (Ta), 52W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VDFN Exposed Pad
8-DFN (5x6)
AOC3870A
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 12V 22A 10DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
  • Rds On (Max) @ Id, Vgs: 3.7mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2.3W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-SMD, No Lead
  • Supplier Device Package: 10-AlphaDFN (3.01x1.52)
paquet: -
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12V
22A (Ta)
3.7mOhm @ 5A, 4.5V
1.1V @ 250µA
32nC @ 4.5V
-
2.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
10-SMD, No Lead
10-AlphaDFN (3.01x1.52)
SMA5135
Sanken Electric USA Inc.

MOSFET 3N/3P-CH 60V 6A 12SIP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Rds On (Max) @ Id, Vgs: 220mOhm @ 3A, 4V, 220mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V, 790pF @ 10V
  • Power - Max: 4W (Ta), 29W (Tc)
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Package / Case: 12-SIP
  • Supplier Device Package: 12-SIP
paquet: -
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60V
6A (Ta)
220mOhm @ 3A, 4V, 220mOhm @ 3A, 10V
2V @ 250µA
-
320pF @ 10V, 790pF @ 10V
4W (Ta), 29W (Tc)
150°C
Through Hole
12-SIP
12-SIP