Page 94 - Produits Toshiba Semiconductor and Storage

Référence	Fabricant	Description	paquet	Stock
TK4P50D(T6RSS-Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 4A DPAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	paquet: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2 432
SSM6N7002BFE,LM	Toshiba Semiconductor and Storage	MOSFET 2N-CH 60V 0.2A ES6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	paquet: SOT-563, SOT-666	Stock14 760 000
SSM6P49NU,LF	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 4A 2-1Y1A FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-UDFN (2x2)	paquet: 6-WDFN Exposed Pad	Stock46 176
2SA1931,KEHINQ(M	Toshiba Semiconductor and Storage	TRANS PNP 5A 50V TO220-3 Transistor Type: PNP Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Power - Max: 2W Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	paquet: TO-220-3 Full Pack	Stock2 656
RN2104MFV,L3F	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 500NA VESM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	paquet: SOT-723	Stock7 504
RN1106MFV(TL3,T)	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.15W VESM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	paquet: SOT-723	Stock1 824 000
RN2413TE85LF	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 0.2W SMINI Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	paquet: TO-236-3, SC-59, SOT-23-3	Stock7 392
HN1B04FU-GR,LF	Toshiba Semiconductor and Storage	TRANS NPN/PNP 50V 0.15A US6 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 150MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	paquet: 6-TSSOP, SC-88, SOT-363	Stock5 264
1SV282TPH3F	Toshiba Semiconductor and Storage	DIODE VARACTOR 34V SINGLE ESC Capacitance @ Vr, F: 3pF @ 25V, 1MHz Capacitance Ratio: 12.5 Capacitance Ratio Condition: C2/C25 Voltage - Peak Reverse (Max): 34V Diode Type: Single Q @ Vr, F: - Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: ESC	paquet: SC-79, SOD-523	Stock269 316
JDV2S07FSTPL3	Toshiba Semiconductor and Storage	DIODE STANDARD 10V FSC Diode Type: Standard - Single Voltage - Peak Reverse (Max): 10V Current - Max: - Capacitance @ Vr, F: 4.9pF @ 1V, 1MHz Resistance @ If, F: - Power Dissipation (Max): - Operating Temperature: 150°C (TJ) Package / Case: 2-SMD, Flat Lead Supplier Device Package: fSC	paquet: 2-SMD, Flat Lead	Stock7 344
CMF05(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 1KV 500MA MFLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 2.7V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 50µA @ 800V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 125°C	paquet: SOD-128	Stock3 152
TB62752AFUG,EL	Toshiba Semiconductor and Storage	IC LED DRIVER RGLTR DIM SOT23-6 Type: DC DC Regulator Topology: Step-Up (Boost) Internal Switch(s): Yes Number of Outputs: 1 Voltage - Supply (Min): 2.8V Voltage - Supply (Max): 5.5V Voltage - Output: - Current - Output / Channel: 20mA Frequency: 1.1MHz Dimming: PWM Applications: Backlight Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	paquet: SOT-23-6	Stock2 752
TC7SH04FU,LJ	Toshiba Semiconductor and Storage	IC INVERTER SINGLE USV Logic Type: Inverter Number of Circuits: 1 Number of Inputs: 1 Features: - Voltage - Supply: 2 V ~ 5.5 V Current - Quiescent (Max): 2µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.5V Logic Level - High: 1.5V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: USV Package / Case: 5-TSSOP, SC-70-5, SOT-353	paquet: 5-TSSOP, SC-70-5, SOT-353	Stock5 680
TC74VHCT541AFTEL	Toshiba Semiconductor and Storage	IC BUFF/DVR TRI-ST 8BIT 20TSSOP Logic Type: Buffer, Non-Inverting Number of Elements: 1 Number of Bits per Element: 8 Input Type: - Output Type: Push-Pull Current - Output High, Low: 8mA, 8mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOP	paquet: 20-TSSOP (0.173", 4.40mm Width)	Stock4 128
TD62004AFG,N	Toshiba Semiconductor and Storage	IC DRIVER DARL SINK 7-CH 16-SOP Type: Driver Protocol: - Number of Drivers/Receivers: 7/0 Duplex: - Receiver Hysteresis: - Data Rate: - Voltage - Supply: 0 V ~ 50 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.173", 4.40mm Width) Supplier Device Package: 16-SOP	paquet: 16-SOIC (0.173", 4.40mm Width)	Stock6 960
TL3GB-WH1,L	Toshiba Semiconductor and Storage	LED LETERAS NEU WHITE 4000K 2SMD Color: White, Neutral CCT (K): 4000K Flux @ 85°C, Current - Test: - Flux @ 25°C, Current - Test: 71 lm (63 lm ~ 79 lm) Current - Test: 100mA Voltage - Forward (Vf) (Typ): 5.76V Lumens/Watt @ Current - Test: 123 lm/W CRI (Color Rendering Index): 80 Current - Max: 200mA Viewing Angle: - Mounting Type: Surface Mount Package / Case: 1212 (3030 Metric) Supplier Device Package: 3030 Size / Dimension: 0.118" L x 0.118" W (3.00mm x 3.00mm) Height - Seated (Max): 0.030" (0.77mm)	paquet: 1212 (3030 Metric)	Stock5 256
TCS10NLU(TE85L,F)	Toshiba Semiconductor and Storage	MAGNETIC SWITCH UNIPOLAR UFV Function: Unipolar Switch Technology: Hall Effect Polarization: North Pole Sensing Range: -2.5mT Trip, -0.3mT Release Test Condition: 25°C Voltage - Supply: 2.3 V ~ 3.6 V Current - Supply (Max): 1.3mA Current - Output (Max): 5mA Output Type: Open Drain Features: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 6-SMD (5 Leads), Flat Lead Supplier Device Package: UFV	paquet: 6-SMD (5 Leads), Flat Lead	Stock4 464
TLP127TPRUF	Toshiba Semiconductor and Storage	OPTOISOLTR 2.5KV DARLNG 6-MFSOP Number of Channels: 1 Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 1000% @ 1mA Current Transfer Ratio (Max): - Turn On / Turn Off Time (Typ): 50µs, 15µs Rise / Fall Time (Typ): 40µs, 15µs Input Type: DC Output Type: Darlington Voltage - Output (Max): 300V Current - Output / Channel: 150mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 1.2V Operating Temperature: -55°C ~ 100°C Mounting Type: Surface Mount Package / Case: 6-SMD (4 Leads), Gull Wing Supplier Device Package: 6-MFSOP, 4 Lead	paquet: 6-SMD (4 Leads), Gull Wing	Stock848 184
TLP701(TP,F)	Toshiba Semiconductor and Storage	OPTOISO 5KV GATE DRIVER 6SDIP GW Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 700ns, 700ns Pulse Width Distortion (Max): - Rise / Fall Time (Typ): 50ns, 50ns Current - Output High, Low: 400mA, 400mA Current - Peak Output: 600mA Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 10 V ~ 30 V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.268", 6.80mm Width) Supplier Device Package: 6-SDIP Gull Wing Approvals: cUL, UL	paquet: 6-SOIC (0.268", 6.80mm Width)	Stock283 944
TB62D901FNG,EL	Toshiba Semiconductor and Storage	AC/DC OFFLINE LED LIGHTING PB-FR Motor Type - Stepper: - Motor Type - AC, DC: - Function: - Output Configuration: - Interface: - Technology: - Step Resolution: - Applications: - Current - Output: - Voltage - Supply: - Voltage - Load: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	paquet: -	Stock7 008
TCR3UG27A,LF	Toshiba Semiconductor and Storage	IC REG LIN 2.7V 300MA 4WCSP-F Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 2.7V Voltage - Output (Max): - Voltage Dropout (Max): 0.327V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): 680nA Current - Supply (Max): - PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Inrush Current, Over Current, Thermal Shutdown Operating Temperature: -40°C ~ 85°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA, WLCSP Supplier Device Package: 4-WCSP-F (0.65x0.65)	paquet: 4-XFBGA, WLCSP	Stock48 042
TMPM380FYFG	Toshiba Semiconductor and Storage	IC MCU 32BIT 256KB FLASH 100LQFP Core Processor: ARM® Cortex®-M3 Core Size: 32-Bit Speed: 40MHz Connectivity: I²C, SIO, UART/USART Peripherals: DMA, LVD, WDT Number of I/O: 83 Program Memory Size: 256KB (256K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Data Converters: A/D 18x12b Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x14)	paquet: 100-LQFP	Stock2 592
SSM6K405TU-LF	Toshiba Semiconductor and Storage	MOSFET N-CH 20V 2A UF6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 10 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: UF6 Package / Case: 6-SMD, Flat Leads	paquet: -	Stock7 470
7UL2T00FK-LF-B	Toshiba Semiconductor and Storage	L-MOS LVP IC SOT-765(US8) VCC:2. Logic Type: NAND Gate Number of Circuits: 2 Number of Inputs: 2 Features: - Voltage - Supply: 2.3V ~ 3.6V Current - Quiescent (Max): 1 µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.35V ~ 0.5V Logic Level - High: 1.1V ~ 1.2V Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 15pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: US8 Package / Case: 8-VFSOP (0.091", 2.30mm Width)	paquet: -	Stock18 000
RN2401-LXHF	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V SMINI Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	paquet: -	Stock18 000
TC7SB3157DL6X-S2E	Toshiba Semiconductor and Storage	BUS SWITCH SINGLE 1:2 MUX/DEMUX Type: Multiplexer/Demultiplexer Circuit: 1 x 2:1 Independent Circuits: 1 Current - Output High, Low: - Voltage Supply Source: Single Supply Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 6-XFDFN Supplier Device Package: 6-MP6D (1.45x1)	paquet: -	Stock16 716
TB6586FG-EL-DRY	Toshiba Semiconductor and Storage	IC MOTOR CONTROLLER PAR 24SSOP Motor Type - Stepper: - Motor Type - AC, DC: Brushless DC (BLDC) Function: Controller - Commutation, Direction Management Output Configuration: Half Bridge (3) Interface: Parallel Technology: Bi-CMOS Step Resolution: - Applications: General Purpose Current - Output: - Voltage - Supply: 6.5V ~ 16.5V Voltage - Load: - Operating Temperature: -30°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-SOP (0.236", 6.00mm Width) Supplier Device Package: 24-SSOP	paquet: -	Request a Quote
TK4P60D-RQ	Toshiba Semiconductor and Storage	PB-F POWER MOSFET TRANSISTOR DP( FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	paquet: -	Stock2 790

TK4P50D(T6RSS-Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 500V 4A DPAK-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2 432

SSM6N7002BFE,LM

Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.2A ES6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

paquet: SOT-563, SOT-666

Stock14 760 000

SSM6P49NU,LF

Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 4A 2-1Y1A

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-UDFN (2x2)

paquet: 6-WDFN Exposed Pad

Stock46 176

2SA1931,KEHINQ(M

Toshiba Semiconductor and Storage

TRANS PNP 5A 50V TO220-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Power - Max: 2W
Frequency - Transition: 60MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS

paquet: TO-220-3 Full Pack

Stock2 656

RN2104MFV,L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 500NA VESM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM

paquet: SOT-723

Stock7 504

RN1106MFV(TL3,T)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.15W VESM

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM

paquet: SOT-723

Stock1 824 000

RN2413TE85LF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.2W SMINI

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

paquet: TO-236-3, SC-59, SOT-23-3

Stock7 392

HN1B04FU-GR,LF

Toshiba Semiconductor and Storage

TRANS NPN/PNP 50V 0.15A US6

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 200mW
Frequency - Transition: 150MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

paquet: 6-TSSOP, SC-88, SOT-363

Stock5 264

1SV282TPH3F

Toshiba Semiconductor and Storage

DIODE VARACTOR 34V SINGLE ESC

Capacitance @ Vr, F: 3pF @ 25V, 1MHz
Capacitance Ratio: 12.5
Capacitance Ratio Condition: C2/C25
Voltage - Peak Reverse (Max): 34V
Diode Type: Single
Q @ Vr, F: -
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: ESC

paquet: SC-79, SOD-523

Stock269 316

JDV2S07FSTPL3

Toshiba Semiconductor and Storage

DIODE STANDARD 10V FSC

Diode Type: Standard - Single
Voltage - Peak Reverse (Max): 10V
Current - Max: -
Capacitance @ Vr, F: 4.9pF @ 1V, 1MHz
Resistance @ If, F: -
Power Dissipation (Max): -
Operating Temperature: 150°C (TJ)
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: fSC

paquet: 2-SMD, Flat Lead

Stock7 344

CMF05(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE GEN PURP 1KV 500MA MFLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 2.7V @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 50µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C

paquet: SOD-128

Stock3 152

TB62752AFUG,EL

Toshiba Semiconductor and Storage

IC LED DRIVER RGLTR DIM SOT23-6

Type: DC DC Regulator
Topology: Step-Up (Boost)
Internal Switch(s): Yes
Number of Outputs: 1
Voltage - Supply (Min): 2.8V
Voltage - Supply (Max): 5.5V
Voltage - Output: -
Current - Output / Channel: 20mA
Frequency: 1.1MHz
Dimming: PWM
Applications: Backlight
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6

paquet: SOT-23-6

Stock2 752

TC7SH04FU,LJ

Toshiba Semiconductor and Storage

IC INVERTER SINGLE USV

Logic Type: Inverter
Number of Circuits: 1
Number of Inputs: 1
Features: -
Voltage - Supply: 2 V ~ 5.5 V
Current - Quiescent (Max): 2µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.5V
Logic Level - High: 1.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: USV
Package / Case: 5-TSSOP, SC-70-5, SOT-353

paquet: 5-TSSOP, SC-70-5, SOT-353

Stock5 680

TC74VHCT541AFTEL

Toshiba Semiconductor and Storage

IC BUFF/DVR TRI-ST 8BIT 20TSSOP

Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Number of Bits per Element: 8
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOP

paquet: 20-TSSOP (0.173", 4.40mm Width)

Stock4 128

TD62004AFG,N

Toshiba Semiconductor and Storage

IC DRIVER DARL SINK 7-CH 16-SOP

Type: Driver
Protocol: -
Number of Drivers/Receivers: 7/0
Duplex: -
Receiver Hysteresis: -
Data Rate: -
Voltage - Supply: 0 V ~ 50 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 16-SOP

paquet: 16-SOIC (0.173", 4.40mm Width)

Stock6 960

TL3GB-WH1,L

Toshiba Semiconductor and Storage

LED LETERAS NEU WHITE 4000K 2SMD

Color: White, Neutral
CCT (K): 4000K
Flux @ 85°C, Current - Test: -
Flux @ 25°C, Current - Test: 71 lm (63 lm ~ 79 lm)
Current - Test: 100mA
Voltage - Forward (Vf) (Typ): 5.76V
Lumens/Watt @ Current - Test: 123 lm/W
CRI (Color Rendering Index): 80
Current - Max: 200mA
Viewing Angle: -
Mounting Type: Surface Mount
Package / Case: 1212 (3030 Metric)
Supplier Device Package: 3030
Size / Dimension: 0.118" L x 0.118" W (3.00mm x 3.00mm)
Height - Seated (Max): 0.030" (0.77mm)

paquet: 1212 (3030 Metric)

Stock5 256

TCS10NLU(TE85L,F)

Toshiba Semiconductor and Storage

MAGNETIC SWITCH UNIPOLAR UFV

Function: Unipolar Switch
Technology: Hall Effect
Polarization: North Pole
Sensing Range: -2.5mT Trip, -0.3mT Release
Test Condition: 25°C
Voltage - Supply: 2.3 V ~ 3.6 V
Current - Supply (Max): 1.3mA
Current - Output (Max): 5mA
Output Type: Open Drain
Features: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 6-SMD (5 Leads), Flat Lead
Supplier Device Package: UFV

paquet: 6-SMD (5 Leads), Flat Lead

Stock4 464

TLP127TPRUF

Toshiba Semiconductor and Storage

OPTOISOLTR 2.5KV DARLNG 6-MFSOP

Number of Channels: 1
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Current Transfer Ratio (Max): -
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Input Type: DC
Output Type: Darlington
Voltage - Output (Max): 300V
Current - Output / Channel: 150mA
Voltage - Forward (Vf) (Typ): 1.15V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 1.2V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 6-SMD (4 Leads), Gull Wing
Supplier Device Package: 6-MFSOP, 4 Lead

paquet: 6-SMD (4 Leads), Gull Wing

Stock848 184

TLP701(TP,F)

Toshiba Semiconductor and Storage

OPTOISO 5KV GATE DRIVER 6SDIP GW

Technology: Optical Coupling
Number of Channels: 1
Voltage - Isolation: 5000Vrms
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): -
Rise / Fall Time (Typ): 50ns, 50ns
Current - Output High, Low: 400mA, 400mA
Current - Peak Output: 600mA
Voltage - Forward (Vf) (Typ): 1.55V
Current - DC Forward (If) (Max): 20mA
Voltage - Supply: 10 V ~ 30 V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Supplier Device Package: 6-SDIP Gull Wing
Approvals: cUL, UL

paquet: 6-SOIC (0.268", 6.80mm Width)

Stock283 944

TB62D901FNG,EL

Toshiba Semiconductor and Storage

AC/DC OFFLINE LED LIGHTING PB-FR

Motor Type - Stepper: -
Motor Type - AC, DC: -
Function: -
Output Configuration: -
Interface: -
Technology: -
Step Resolution: -
Applications: -
Current - Output: -
Voltage - Supply: -
Voltage - Load: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

paquet: -

Stock7 008

TCR3UG27A,LF

Toshiba Semiconductor and Storage

IC REG LIN 2.7V 300MA 4WCSP-F

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 2.7V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.327V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): 680nA
Current - Supply (Max): -
PSRR: 70dB (1kHz)
Control Features: Enable
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Operating Temperature: -40°C ~ 85°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, WLCSP
Supplier Device Package: 4-WCSP-F (0.65x0.65)

paquet: 4-XFBGA, WLCSP

Stock48 042

TMPM380FYFG

Toshiba Semiconductor and Storage

IC MCU 32BIT 256KB FLASH 100LQFP

Core Processor: ARM® Cortex®-M3
Core Size: 32-Bit
Speed: 40MHz
Connectivity: I²C, SIO, UART/USART
Peripherals: DMA, LVD, WDT
Number of I/O: 83
Program Memory Size: 256KB (256K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Data Converters: A/D 18x12b
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x14)

paquet: 100-LQFP

Stock2 592

SSM6K405TU-LF

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 2A UF6

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 10 V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: UF6
Package / Case: 6-SMD, Flat Leads

paquet: -

Stock7 470

7UL2T00FK-LF-B

Toshiba Semiconductor and Storage

L-MOS LVP IC SOT-765(US8) VCC:2.

Logic Type: NAND Gate
Number of Circuits: 2
Number of Inputs: 2
Features: -
Voltage - Supply: 2.3V ~ 3.6V
Current - Quiescent (Max): 1 µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.35V ~ 0.5V
Logic Level - High: 1.1V ~ 1.2V
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 15pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: US8
Package / Case: 8-VFSOP (0.091", 2.30mm Width)

paquet: -

Stock18 000

RN2401-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V SMINI

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

paquet: -

Stock18 000

TC7SB3157DL6X-S2E

Toshiba Semiconductor and Storage

BUS SWITCH SINGLE 1:2 MUX/DEMUX

Type: Multiplexer/Demultiplexer
Circuit: 1 x 2:1
Independent Circuits: 1
Current - Output High, Low: -
Voltage Supply Source: Single Supply
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Supplier Device Package: 6-MP6D (1.45x1)

paquet: -

Stock16 716

TB6586FG-EL-DRY

Toshiba Semiconductor and Storage

IC MOTOR CONTROLLER PAR 24SSOP

Motor Type - Stepper: -
Motor Type - AC, DC: Brushless DC (BLDC)
Function: Controller - Commutation, Direction Management
Output Configuration: Half Bridge (3)
Interface: Parallel
Technology: Bi-CMOS
Step Resolution: -
Applications: General Purpose
Current - Output: -
Voltage - Supply: 6.5V ~ 16.5V
Voltage - Load: -
Operating Temperature: -30°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-SOP (0.236", 6.00mm Width)
Supplier Device Package: 24-SSOP

paquet: -

Request a Quote

TK4P60D-RQ

Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DP(

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

paquet: -

Stock2 790