Produits Toshiba Semiconductor and Storage

2SJ681(Q)

Toshiba Semiconductor and Storage

MOSFET P-CH 60V 5A PW-MOLD

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 20W (Ta)
• Rds On (Max) @ Id, Vgs: 170 mOhm @ 2.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PW-MOLD2
• Package / Case: TO-251-3 Stub Leads, IPak

paquet: TO-251-3 Stub Leads, IPak

TK5A53D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 525V 5A TO-220SIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 525V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 35W (Tc)
• Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

paquet: TO-220-3 Full Pack

TK30A06N1,S4X

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 30A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 25W (Tc)
• Rds On (Max) @ Id, Vgs: 15 mOhm @ 15A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack, Isolated Tab

paquet: TO-220-3 Full Pack, Isolated Tab

TK560P60Y,RQ

Toshiba Semiconductor and Storage

MOSFET TRANSISTOR DPAK(OS) PD

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 240µA
• Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 300V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 60W (Tc)
• Rds On (Max) @ Id, Vgs: 560 mOhm @ 3.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

RN1503(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.3W SMV

• Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22k
• Resistor - Emitter Base (R2) (Ohms): 22k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

paquet: SC-74A, SOT-753

1SV228TPH3F

Toshiba Semiconductor and Storage

DIODE VARACTOR DUAL 15V SC-59

• Capacitance @ Vr, F: 13.7pF @ 8V, 1MHz
• Capacitance Ratio: 2.6
• Capacitance Ratio Condition: C3/C8
• Voltage - Peak Reverse (Max): 15V
• Diode Type: 1 Pair Common Cathode
• Q @ Vr, F: -
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

paquet: TO-236-3, SC-59, SOT-23-3

1SS306TE85LF

Toshiba Semiconductor and Storage

DIODE ARRAY GP 200V 100MA SC61B

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io) (per Diode): 100mA
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 60ns
• Current - Reverse Leakage @ Vr: 1µA @ 200V
• Operating Temperature - Junction: 125°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SC-61AA
• Supplier Device Package: SC-61B

paquet: SC-61AA

TA76431AS,T6F(J

Toshiba Semiconductor and Storage

IC REG LINEAR 100MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 100mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: LSTM

paquet: TO-226-3, TO-92-3 Long Body

TBD62502APG

Toshiba Semiconductor and Storage

IC LOAD SWITCH 7CH 0.3A 16DIP

• Switch Type: General Purpose
• Number of Outputs: 7
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 50V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.75A
• Rds On (Typ): -
• Input Type: Inverting
• Features: -
• Fault Protection: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-DIP (0.300", 7.62mm)
• Supplier Device Package: 16-DIP

paquet: 16-DIP (0.300", 7.62mm)

TCK22951G,LF

Toshiba Semiconductor and Storage

IC PWR SWITCH P-CHAN 1:1 WCSP6E

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: P-Channel
• Interface: On/Off
• Voltage - Load: 1.1 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 740mA
• Rds On (Typ): 31 mOhm
• Input Type: Non-Inverting
• Features: Load Discharge
• Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 6-UFBGA, WLCSP
• Supplier Device Package: 6-WCSPE (0.80x1.2)

paquet: 6-UFBGA, WLCSP

TC74HC139APF

Toshiba Semiconductor and Storage

IC DECODER DUAL 2-4 LINE 16-DIP

• Type: Decoder/Demultiplexer
• Circuit: 1 x 2:4
• Independent Circuits: 2
• Current - Output High, Low: 5.2mA, 5.2mA
• Voltage Supply Source: Single Supply
• Voltage - Supply: 2 V ~ 6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: 16-DIP (0.300", 7.62mm)
• Supplier Device Package: 16-DIP

paquet: 16-DIP (0.300", 7.62mm)

TC7SHU04FSTPL3

Toshiba Semiconductor and Storage

IC GATE L-MOS FSV

• Logic Type: Inverter
• Number of Circuits: 1
• Number of Inputs: 1
• Features: -
• Voltage - Supply: 2 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.3V
• Logic Level - High: 1.7V
• Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: fSV
• Package / Case: SOT-953

paquet: SOT-953

TC74LCX125FT(EK2,M)

Toshiba Semiconductor and Storage

IC BUS BUFFER QDLV N-INV 14TSSOP

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 4
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 24mA, 24mA
• Voltage - Supply: 1.65 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 14-TSSOP

paquet: 14-TSSOP (0.173", 4.40mm Width)

74HC244D(BJ)

Toshiba Semiconductor and Storage

IC BUFFER NON-INVERT 6V 20SOIC

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 2
• Number of Bits per Element: 4
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 7.8mA, 7.8mA
• Voltage - Supply: 2 V ~ 6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 20-SOIC

paquet: 20-SOIC (0.295", 7.50mm Width)

TD62783AFG,S

Toshiba Semiconductor and Storage

IC DRIVER DARL SOURCE 8CH 18-SOP

• Type: Driver
• Protocol: -
• Number of Drivers/Receivers: 8/0
• Duplex: -
• Receiver Hysteresis: -
• Data Rate: -
• Voltage - Supply: 5V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 18-SOIC (0.276", 7.00mm Width)
• Supplier Device Package: 18-SOP

paquet: 18-SOIC (0.276", 7.00mm Width)

TL2FL-WH1,L

Toshiba Semiconductor and Storage

LED LETERAS NEU WHITE 4000K 2SMD

• Color: White, Neutral
• CCT (K): 4000K
• Flux @ 85°C, Current - Test: -
• Flux @ 25°C, Current - Test: 23 lm (21 lm ~ 26 lm)
• Current - Test: 65mA
• Voltage - Forward (Vf) (Typ): 2.82V
• Lumens/Watt @ Current - Test: 125 lm/W
• CRI (Color Rendering Index): 80
• Current - Max: 100mA
• Viewing Angle: -
• Mounting Type: Surface Mount
• Package / Case: 1206 (3014 Metric)
• Supplier Device Package: 3014
• Size / Dimension: 0.118" L x 0.055" W (3.00mm x 1.40mm)
• Height - Seated (Max): 0.030" (0.77mm)

paquet: 1206 (3014 Metric)

DF2S6.2ASL,L3F

Toshiba Semiconductor and Storage

TVS DIODE 5VWM SL2-2

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 5V (Max)
• Voltage - Breakdown (Min): 5.8V
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 32pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: SL2

paquet: 0201 (0603 Metric)

TLP171A(TP,F

Toshiba Semiconductor and Storage

PHOTORELAY SPST-NO 400MA 60V

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 2 Ohm
• Load Current: 400mA
• Voltage - Input: 1.27VDC
• Voltage - Load: 0 ~ 60 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 4-SOP (0.173", 4.40mm)
• Supplier Device Package: 4-SOP (2.54mm)
• Relay Type: Relay

paquet: 4-SOP (0.173", 4.40mm)

TLP292-4(E

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

• Number of Channels: 4
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 50% @ 5mA
• Current Transfer Ratio (Max): 600% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: AC, DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.179", 4.55mm Width)
• Supplier Device Package: 16-SO

paquet: 16-SOIC (0.179", 4.55mm Width)

TLP293(TPL,E

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS 4-SO

• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 50% @ 5mA
• Current Transfer Ratio (Max): 600% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 4-SOIC (0.179", 4.55mm)
• Supplier Device Package: 4-SO

paquet: 4-SOIC (0.179", 4.55mm)

TLP352F(D4,F)

Toshiba Semiconductor and Storage

OPTOISO 3.75KV GATE DRVR 8DIP

• Technology: Optical Coupling
• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Common Mode Transient Immunity (Min): 20kV/µs
• Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
• Pulse Width Distortion (Max): 50ns
• Rise / Fall Time (Typ): 15ns, 8ns
• Current - Output High, Low: 2A, 2A
• Current - Peak Output: 2.5A
• Voltage - Forward (Vf) (Typ): 1.55V
• Current - DC Forward (If) (Max): 20mA
• Voltage - Supply: 15 V ~ 30 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP
• Approvals: CSA, cUL, UL, VDE

paquet: 8-DIP (0.300", 7.62mm)

TTC011B-Q-S

Toshiba Semiconductor and Storage

TRANSISTOR NPN BIPO TO126N

• Transistor Type: -
• Current - Collector (Ic) (Max): -
• Voltage - Collector Emitter Breakdown (Max): -
• Vce Saturation (Max) @ Ib, Ic: -
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Power - Max: -
• Frequency - Transition: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

paquet: -

Request a Quote

RN2130MFV-L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 100 kOhms
• Resistor - Emitter Base (R2) (Ohms): 100 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: -
• Power - Max: 150 mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VESM

paquet: -

RN2106MFV-L3XHF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 4.7 kOhms
• Resistor - Emitter Base (R2) (Ohms): 47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250 MHz
• Power - Max: 150 mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VESM

paquet: -

CRG09A-LQ-M

Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 1A S-FLAT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: S-FLAT (1.6x3.5)
• Operating Temperature - Junction: 150°C (Max)

paquet: -

Request a Quote

CTS05F40-L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 500MA CST2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 810 mV @ 500 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 15 µA @ 40 V
• Capacitance @ Vr, F: 28pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-882
• Supplier Device Package: CST2
• Operating Temperature - Junction: 150°C (Max)

paquet: -

CMZ15-TE12L-Q-M

Toshiba Semiconductor and Storage

DIODE ZENER 15V 2W MFLAT

• Voltage - Zener (Nom) (Vz): 15 V
• Tolerance: ±10%
• Power - Max: 2 W
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 10 µA @ 10 V
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: M-FLAT (2.4x3.8)

paquet: -

RN1313-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SC70

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 47 kOhms
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 250 MHz
• Power - Max: 100 mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SC-70

paquet: -