Produits Infineon Technologies

IRL3502STRLPBF

Infineon Technologies

MOSFET N-CH 20V 110A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
• Vgs(th) (Max) @ Id: 700mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 15V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 140W (Tc)
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 64A, 7V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFIZ24EPBF

Infineon Technologies

MOSFET N-CH 60V 14A TO220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 29W (Tc)
• Rds On (Max) @ Id, Vgs: 71 mOhm @ 7.8A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB Full-Pak
• Package / Case: TO-220-3 Full Pack

paquet: TO-220-3 Full Pack

IRFS7734-7PPBF

Infineon Technologies

MOSFET N-CH 75V 183A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 197A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.7V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10130pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 294W (Tc)
• Rds On (Max) @ Id, Vgs: 3.05 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (TO-263AB)
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

paquet: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

IPP80P04P4L04AKSA1

Infineon Technologies

MOSFET P-CH TO220-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 176nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V
• Vgs (Max): +5V, -16V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

paquet: TO-220-3

BSO301SP H

Infineon Technologies

MOSFET P-CH 30V 12.6A 8DSO

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5890pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.79W (Ta)
• Rds On (Max) @ Id, Vgs: 8 mOhm @ 14.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-DSO-8
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

paquet: 8-SOIC (0.154", 3.90mm Width)

BCR129E6327HTSA1

Infineon Technologies

TRANS PREBIAS NPN 200MW SOT23-3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 150MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

paquet: TO-236-3, SC-59, SOT-23-3

BF799WE6327BTSA1

Infineon Technologies

TRANSISTOR NPN RF 20V SOT-323

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 20V
• Frequency - Transition: 800MHz
• Noise Figure (dB Typ @ f): 3dB @ 100MHz
• Gain: -
• Power - Max: 280mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
• Current - Collector (Ic) (Max): 35mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

paquet: SC-70, SOT-323

TLE4276VAKSA1

Infineon Technologies

IC REG LIN POS ADJ 400MA TO220-5

• Output Configuration: Positive
• Output Type: Adjustable
• Number of Regulators: 1
• Voltage - Input (Max): 40V
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): 20V
• Voltage Dropout (Max): 0.5V @ 250mA
• Current - Output: 400mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 200µA ~ 25mA
• PSRR: 54dB (100Hz)
• Control Features: Inhibit
• Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-5 Formed Leads
• Supplier Device Package: PG-TO220-5-3

paquet: TO-220-5 Formed Leads

IR3899MTR1PBF

Infineon Technologies

IC REG BUCK ADJ 9A SYNC 16QFN

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 1V
• Voltage - Input (Max): 21V
• Voltage - Output (Min/Fixed): 0.5V
• Voltage - Output (Max): 18.06V
• Current - Output: 9A
• Frequency - Switching: 300kHz ~ 1.5MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 16-PowerVQFN
• Supplier Device Package: 16-PQFN (4x5)

paquet: 16-PowerVQFN

IPS1041LTRPBF

Infineon Technologies

IC IPS SW LOW SIDE 1CH SOT-223

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 28V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.95A
• Rds On (Typ): 80 mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Current Limiting (Fixed), Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

paquet: TO-261-4, TO-261AA

IR2128S

Infineon Technologies

IC MOSFET DRIVER CUR-SENSE 8SOIC

• Driven Configuration: High-Side or Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 12 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 3V
• Current - Peak Output (Source, Sink): 250mA, 500mA
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 80ns, 40ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

paquet: 8-SOIC (0.154", 3.90mm Width)

TDA21201B7T

Infineon Technologies

IC MOSFET DRIVER N-CH TO263-7-2

• Output Configuration: Half Bridge
• Applications: Synchronous Buck Converters
• Interface: PWM
• Load Type: Inductive
• Technology: Power MOSFET
• Rds On (Typ): 4.8 mOhm LS, 13.3 mOhm HS
• Current - Output / Channel: 30A
• Current - Peak Output: -
• Voltage - Supply: 9 V ~ 15 V
• Voltage - Load: 9 V ~ 15 V
• Operating Temperature: -25°C ~ 125°C (TJ)
• Features: Bootstrap Circuit
• Fault Protection: Over Temperature, Shoot-Through, UVLO
• Mounting Type: Surface Mount
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
• Supplier Device Package: P-TO263-7

paquet: TO-263-7, D2Pak (6 Leads + Tab)

XE164GM24F80LAAFXUMA1

Infineon Technologies

IC MCU 16BIT 192KB FLASH 100LQFP

• Core Processor: C166SV2
• Core Size: 16-Bit
• Speed: 80MHz
• Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
• Peripherals: I2S, POR, PWM, WDT
• Number of I/O: 76
• Program Memory Size: 192KB (192K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 24K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 11x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 100-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-100-8

paquet: 100-LQFP Exposed Pad

PVG612PBF

Infineon Technologies

IC RELAY PHOTOVO 60V 1A 6-DIP

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 500 mOhm
• Load Current: 1A
• Voltage - Input: 1.2VDC
• Voltage - Load: 0 ~ 60 V
• Mounting Type: Through Hole
• Termination Style: PC Pin
• Package / Case: 6-DIP (0.300", 7.62mm)
• Supplier Device Package: 6-DIP
• Relay Type: Relay

paquet: 6-DIP (0.300", 7.62mm)

CHL8112A-06CRT

Infineon Technologies

IC REG BUCK 40VQFN

• Output Type: -
• Function: -
• Output Configuration: -
• Topology: -
• Number of Outputs: -
• Output Phases: -
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

paquet: -

CHL8104-02CRT

Infineon Technologies

IC REG BUCK 40VQFN

• Output Type: -
• Function: -
• Output Configuration: -
• Topology: -
• Number of Outputs: -
• Output Phases: -
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

paquet: -

T460N22TOFXPSA1

Infineon Technologies

SCR MODULE 2600V 1000A DO200AB

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 2.6 kV
• Current - On State (It (AV)) (Max): 460 A
• Current - On State (It (RMS)) (Max): 1000 A
• Voltage - Gate Trigger (Vgt) (Max): 1.5 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 10000A @ 50Hz
• Current - Hold (Ih) (Max): 200 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Clamp On
• Package / Case: DO-200AB, B-PUK

paquet: -

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BSZ105N04NSGATMA1

Infineon Technologies

MOSFET N-CH 40V 11A/40A 8TSDSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 14µA
• Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
• Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TSDSON-8
• Package / Case: 8-PowerTDFN

paquet: -

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CY8C4125LQE-S423T

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 24MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
• Number of I/O: 34
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 4K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 40-UFQFN Exposed Pad
• Supplier Device Package: 40-QFN (6x6)

paquet: -

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S29PL032J70BFI072

Infineon Technologies

IC FLASH 32MBIT PARALLEL 48FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 32Mbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-VFBGA
• Supplier Device Package: 48-VFBGA (8.15x6.15)

paquet: -

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CYT2B74CADQ0AZEGS

Infineon Technologies

IC MCU 32BT 1.0625MB FLSH 80LQFP

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 160MHz
• Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
• Number of I/O: 63
• Program Memory Size: 1.0625MB (1.0625M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 96K x 8
• RAM Size: 128K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 52x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 80-LQFP
• Supplier Device Package: 80-LQFP (12x12)

paquet: -

CY8C4127LQA-S443

Infineon Technologies

IC MCU 32BIT 128KB FLASH 40QFN

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 24MHz
• Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, Temp Sensor, TRNG, WDT
• Number of I/O: 34
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 40-UFQFN Exposed Pad
• Supplier Device Package: 40-QFN (6x6)

paquet: -

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TDA21520AUMA1

Infineon Technologies

IFX POWERSTAGE/DRIVER PG-IQFN-25

• Output Configuration: -
• Applications: -
• Interface: -
• Load Type: -
• Technology: -
• Rds On (Typ): -
• Current - Output / Channel: -
• Current - Peak Output: -
• Voltage - Supply: 4.25V ~ 16V
• Voltage - Load: -
• Operating Temperature: -40°C ~ 125°C (TJ)
• Features: -
• Fault Protection: -
• Mounting Type: Surface Mount
• Package / Case: 25-PowerTFQFN
• Supplier Device Package: PG-IQFN-25-1

paquet: -

CY8C4245PVA-472ZT

Infineon Technologies

IC MCU 32BIT 32KB FLASH 28SSOP

• Core Processor: ARM® Cortex®-M0
• Core Size: 32-Bit Single-Core
• Speed: 48MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
• Number of I/O: 24
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 4K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 8x12b SAR; D/A 1x7b, 1x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 28-SSOP (0.209", 5.30mm Width)
• Supplier Device Package: 28-SSOP

paquet: -

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IRF8714TRPBF-1

Infineon Technologies

MOSFET N-CH 30V 14A 8SO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOIC
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

paquet: -

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IRG4CC30FB

Infineon Technologies

IGBT CHIP

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 6A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

paquet: -

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S25HL01GTDPMHV010

Infineon Technologies

IC FLASH 1GBIT SPI/QUAD 16SOIC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 1Gbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 133 MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 16-SOIC

paquet: -

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IRF7103TRPBFXTMA1

Infineon Technologies

MOSFET 2N-CH 50V 3A 8DSO-902

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 50V
• Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
• Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
• Power - Max: 2W (Ta)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8-902

paquet: -