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Produits Infineon Technologies - Transistors - IGBT - Simples

Dossiers 1 429
Page  10/52
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IGC70T120T8RQ
Infineon Technologies

IGBT 1200V 75A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 75A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
paquet: -
Request a Quote
1200 V
-
225 A
2.42V @ 15V, 75A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
IGC70T120T8RL
Infineon Technologies

IGBT 1200V 75A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 75A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
paquet: -
Request a Quote
1200 V
-
225 A
2.07V @ 15V, 75A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
SIGC19T60SEX1SA1
Infineon Technologies

IGBT 3 CHIP 600V

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 1.97V @ 15V, 40A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
paquet: -
Request a Quote
600 V
40 A
120 A
1.97V @ 15V, 40A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IGC07T120T8LX1SA2
Infineon Technologies

IGBT 1200V 4A SAWN ON FOIL

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 12 A
  • Vce(on) (Max) @ Vge, Ic: 2.02V @ 15V, 4A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
paquet: -
Request a Quote
1200 V
-
12 A
2.02V @ 15V, 4A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
SIGC42T60SNCX1SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 57ns/380ns
  • Test Condition: 400V, 50A, 6.8Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
paquet: -
Request a Quote
600 V
50 A
150 A
2.5V @ 15V, 50A
-
-
Standard
-
57ns/380ns
400V, 50A, 6.8Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
SIGC42T60SNCX1SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 57ns/380ns
  • Test Condition: 400V, 50A, 6.8Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
paquet: -
Request a Quote
600 V
50 A
150 A
2.5V @ 15V, 50A
-
-
Standard
-
57ns/380ns
400V, 50A, 6.8Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
IRGB15B60KDPBF-INF
Infineon Technologies

IGBT, 31A I(C), 600V V(BR)CES, N

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 31 A
  • Current - Collector Pulsed (Icm): 62 A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
  • Power - Max: 208 W
  • Switching Energy: 220µJ (on), 340µJ (off)
  • Input Type: Standard
  • Gate Charge: 84 nC
  • Td (on/off) @ 25°C: 34ns/184ns
  • Test Condition: 400V, 15A, 22Ohm, 15V
  • Reverse Recovery Time (trr): 92 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
paquet: -
Request a Quote
600 V
31 A
62 A
2.2V @ 15V, 15A
208 W
220µJ (on), 340µJ (off)
Standard
84 nC
34ns/184ns
400V, 15A, 22Ohm, 15V
92 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IKFW50N60DH3EXKSA1
Infineon Technologies

IGBT TRENCH FS 600V 40A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
  • Power - Max: 130 W
  • Switching Energy: 1.28mJ (on), 560µJ (off)
  • Input Type: Standard
  • Gate Charge: 160 nC
  • Td (on/off) @ 25°C: 21ns/174ns
  • Test Condition: 400V, 40A, 8Ohm, 15V
  • Reverse Recovery Time (trr): 64 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-AI
paquet: -
Stock465
600 V
40 A
120 A
2.7V @ 15V, 40A
130 W
1.28mJ (on), 560µJ (off)
Standard
160 nC
21ns/174ns
400V, 40A, 8Ohm, 15V
64 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-AI
IKWH50N65WR6XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 85A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 85 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
  • Power - Max: 205 W
  • Switching Energy: 1.5mJ (on), 730µJ (off)
  • Input Type: Standard
  • Gate Charge: 144 nC
  • Td (on/off) @ 25°C: 40ns/351ns
  • Test Condition: 400V, 50A, 22Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-32
paquet: -
Stock1 434
650 V
85 A
150 A
1.85V @ 15V, 50A
205 W
1.5mJ (on), 730µJ (off)
Standard
144 nC
40ns/351ns
400V, 50A, 22Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-32
IKD08N65ET6ARMA1
Infineon Technologies

IGBT TRENCH FS 650V 15A TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): 25 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 5A
  • Power - Max: 47 W
  • Switching Energy: 110µJ (on), 40µJ (off)
  • Input Type: Standard
  • Gate Charge: 17 nC
  • Td (on/off) @ 25°C: 20ns/59ns
  • Test Condition: 400V, 5A, 47Ohm, 15V
  • Reverse Recovery Time (trr): 43 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
paquet: -
Stock8 982
650 V
15 A
25 A
1.9V @ 15V, 5A
47 W
110µJ (on), 40µJ (off)
Standard
17 nC
20ns/59ns
400V, 5A, 47Ohm, 15V
43 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-3
FD1200R12IE4B1S1BDMA1
Infineon Technologies

FD1200R12IE4B1S1BD - IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SIGC18T60SNCX1SA4
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 36ns/250ns
  • Test Condition: 400V, 20A, 16Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
paquet: -
Request a Quote
600 V
20 A
60 A
2.5V @ 15V, 20A
-
-
Standard
-
36ns/250ns
400V, 20A, 16Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
SIGC18T60SNCX1SA3
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 36ns/250ns
  • Test Condition: 400V, 20A, 16Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
paquet: -
Request a Quote
600 V
20 A
60 A
2.5V @ 15V, 20A
-
-
Standard
-
36ns/250ns
400V, 20A, 16Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
SIGC18T60SNCX1SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 36ns/250ns
  • Test Condition: 400V, 20A, 16Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
paquet: -
Request a Quote
600 V
20 A
60 A
2.5V @ 15V, 20A
-
-
Standard
-
36ns/250ns
400V, 20A, 16Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
63-8035
Infineon Technologies

IGBT CHIP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
63-8028
Infineon Technologies

IGBT CHIP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IGC18T120T8LX1SA2
Infineon Technologies

IGBT 1200V 15A SAWN ON FOIL

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 15A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
paquet: -
Request a Quote
1200 V
-
45 A
2.07V @ 15V, 15A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IGW50N60TFKSA1
Infineon Technologies

IGBT TRENCH FS 600V 100A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 333 W
  • Switching Energy: 2.6mJ
  • Input Type: Standard
  • Gate Charge: 310 nC
  • Td (on/off) @ 25°C: 26ns/299ns
  • Test Condition: 400V, 50A, 7Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-1
paquet: -
Stock777
600 V
100 A
150 A
2V @ 15V, 50A
333 W
2.6mJ
Standard
310 nC
26ns/299ns
400V, 50A, 7Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-1
SIGC121T60NR2CX7SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 150 A
  • Current - Collector Pulsed (Icm): 450 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 125ns/225ns
  • Test Condition: 300V, 150A, 1.5Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
paquet: -
Request a Quote
600 V
150 A
450 A
2.5V @ 15V, 150A
-
-
Standard
-
125ns/225ns
300V, 150A, 1.5Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
IKN04N60RC2ATMA1
Infineon Technologies

IGBT 600V 7.5A SOT223-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 7.5 A
  • Current - Collector Pulsed (Icm): 12 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 4A
  • Power - Max: 6.8 W
  • Switching Energy: 95µJ (on), 62µJ (off)
  • Input Type: Standard
  • Gate Charge: 24 nC
  • Td (on/off) @ 25°C: 8ns/126ns
  • Test Condition: 400V, 4A, 49Ohm, 15V
  • Reverse Recovery Time (trr): 39 ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: PG-SOT223-3
paquet: -
Stock8 592
600 V
7.5 A
12 A
2.3V @ 15V, 4A
6.8 W
95µJ (on), 62µJ (off)
Standard
24 nC
8ns/126ns
400V, 4A, 49Ohm, 15V
39 ns
-40°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
PG-SOT223-3
IGC99T120T8RQX1SA1
Infineon Technologies

IGBT CHIP

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
paquet: -
Request a Quote
1200 V
100 A
300 A
2.42V @ 15V, 100A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IKFW40N65DH5XKSA1
Infineon Technologies

HOME APPLIANCES 14 PG-HSIP247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 53 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 40A
  • Power - Max: 106 W
  • Switching Energy: 1.17mJ (on), 500µJ (off)
  • Input Type: Standard
  • Gate Charge: 70 nC
  • Td (on/off) @ 25°C: 18ns/105ns
  • Test Condition: 400V, 40A, 14Ohm, 15V
  • Reverse Recovery Time (trr): 64 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-HSIP247-3-2
paquet: -
Request a Quote
650 V
53 A
120 A
2.25V @ 15V, 40A
106 W
1.17mJ (on), 500µJ (off)
Standard
70 nC
18ns/105ns
400V, 40A, 14Ohm, 15V
64 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-HSIP247-3-2
IKZA40N65EH7XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-4

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 40A
  • Power - Max: 210 W
  • Switching Energy: 0.37mJ (on), 0.36mJ (off)
  • Input Type: Standard
  • Gate Charge: 81 nC
  • Td (on/off) @ 25°C: 13ns/134ns
  • Test Condition: 400V, 40A, 12.5Ohm, 15V
  • Reverse Recovery Time (trr): 49.6 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: PG-TO247-4-3
paquet: -
Stock720
650 V
80 A
160 A
1.65V @ 15V, 40A
210 W
0.37mJ (on), 0.36mJ (off)
Standard
81 nC
13ns/134ns
400V, 40A, 12.5Ohm, 15V
49.6 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4
PG-TO247-4-3
IRFP4227PBFXKMA1
Infineon Technologies

TRENCH >=100V

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
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-
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-
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-
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-
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IKP20N60TXKSA1
Infineon Technologies

IGBT TRENCH FS 600V 40A TO220-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
  • Power - Max: 166 W
  • Switching Energy: 770µJ
  • Input Type: Standard
  • Gate Charge: 120 nC
  • Td (on/off) @ 25°C: 18ns/199ns
  • Test Condition: 400V, 20A, 12Ohm, 15V
  • Reverse Recovery Time (trr): 41 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3-1
paquet: -
Request a Quote
600 V
40 A
60 A
2.05V @ 15V, 20A
166 W
770µJ
Standard
120 nC
18ns/199ns
400V, 20A, 12Ohm, 15V
41 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO220-3-1
IKZA75N65EH7XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-4

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A
  • Power - Max: 338 W
  • Switching Energy: 0.75mJ (on), 0.84mJ (off)
  • Input Type: Standard
  • Gate Charge: 152 nC
  • Td (on/off) @ 25°C: 26ns/199ns
  • Test Condition: 400V, 75A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 56 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: PG-TO247-4-3
paquet: -
Stock642
650 V
80 A
300 A
1.65V @ 15V, 75A
338 W
0.75mJ (on), 0.84mJ (off)
Standard
152 nC
26ns/199ns
400V, 75A, 10Ohm, 15V
56 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4
PG-TO247-4-3
IKB30N65EH5ATMA1
Infineon Technologies

IGBT TRENCH FS 650V 55A TO263-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 55 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 188 W
  • Switching Energy: 870µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 70 nC
  • Td (on/off) @ 25°C: 24ns/159ns
  • Test Condition: 400V, 30A, 22Ohm, 15V
  • Reverse Recovery Time (trr): 75 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
paquet: -
Stock14 790
650 V
55 A
90 A
2.1V @ 15V, 30A
188 W
870µJ (on), 300µJ (off)
Standard
70 nC
24ns/159ns
400V, 30A, 22Ohm, 15V
75 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3
IGC50T120T8RLX7SA2
Infineon Technologies

IGBT 1200V 50A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
1200 V
-
150 A
2.07V @ 15V, 50A
-
-
Standard
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