Page 64 - Produits Vishay Siliconix

Référence	Fabricant	Description	paquet	Stock
2N5115JTVL02	Vishay Siliconix	JFET P-CH 30V TO-18 FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-206AA (TO-18)	paquet: TO-206AA, TO-18-3 Metal Can	Stock5 024
IRFI9Z14G	Vishay Siliconix	MOSFET P-CH 60V 5.3A TO220FP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 27W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 3.2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	paquet: TO-220-3 Full Pack, Isolated Tab	Stock438 000
IRFI9Z14GPBF	Vishay Siliconix	MOSFET P-CH 60V 5.3A TO220FP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 27W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 3.2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	paquet: TO-220-3 Full Pack, Isolated Tab	Stock29 100
SIR688DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 60V 60A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3105pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	paquet: PowerPAK? SO-8	Stock5 376
SQM120P04-04L_GE3	Vishay Siliconix	MOSFET P-CH 40V 120A TO-263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13980pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2 176
IRFP140PBF	Vishay Siliconix	MOSFET N-CH 100V 31A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 77 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	paquet: TO-247-3	Stock61 752
IRFZ20PBF	Vishay Siliconix	MOSFET N-CH 50V 15A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	paquet: TO-220-3	Stock16 842
SIR880ADP-T1-GE3	Vishay Siliconix	MOSFET N-CH 80V 60A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2289pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	paquet: PowerPAK? SO-8	Stock720 000
IRFR110TRPBF	Vishay Siliconix	MOSFET N-CH 100V 4.3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 540 mOhm @ 2.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	paquet: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock70 356
SIB914DK-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 8V 1.5A PPAK SC75-6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 1.5A Rds On (Max) @ Id, Vgs: 113 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 4V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-75-6L Dual Supplier Device Package: PowerPAK? SC-75-6L Dual	paquet: PowerPAK? SC-75-6L Dual	Stock3 328
SI7940DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 12V 7.6A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 7.6A Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	paquet: PowerPAK? SO-8 Dual	Stock5 488
SI7946DP-T1-E3	Vishay Siliconix	MOSFET 2N-CH 150V 2.1A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 2.1A Rds On (Max) @ Id, Vgs: 150 mOhm @ 3.3A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	paquet: PowerPAK? SO-8 Dual	Stock36 000
SQJQ904E-T1_GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 40V PWRPAK8X8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 20V Power - Max: 75W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 8 x 8 Dual Supplier Device Package: PowerPAK? 8 x 8 Dual	paquet: PowerPAK? 8 x 8 Dual	Stock20 748
SJM185BEA	Vishay Siliconix	IC ANALOG SWITCH Switch Circuit: - Multiplexer/Demultiplexer Circuit: - Number of Circuits: - On-State Resistance (Max): - Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): - Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): - -3db Bandwidth: - Charge Injection: - Channel Capacitance (CS(off), CD(off)): - Current - Leakage (IS(off)) (Max): - Crosstalk: - Operating Temperature: - Package / Case: - Supplier Device Package: -	paquet: -	Stock7 856
DG333ALDJ	Vishay Siliconix	IC SWITCH QUAD SPDT 20DIP Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Circuits: 1 On-State Resistance (Max): 45 Ohm Channel-to-Channel Matching (ΔRon): 2 Ohm (Max) Voltage - Supply, Single (V+): 5 V ~ 40 V Voltage - Supply, Dual (V±): ±4 V ~ 22 V Switch Time (Ton, Toff) (Max): 175ns, 145ns -3db Bandwidth: - Charge Injection: 10pC Channel Capacitance (CS(off), CD(off)): 8pF Current - Leakage (IS(off)) (Max): 250pA Crosstalk: -80dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 20-DIP (0.300", 7.62mm) Supplier Device Package: 20-PDIP	paquet: 20-DIP (0.300", 7.62mm)	Stock7 712
DG2742DS-T1-E3	Vishay Siliconix	IC SWITCH 2 X SPST 8 OHM SOT23-8 Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 2 On-State Resistance (Max): 800 mOhm Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): 1.5 V ~ 3.6 V Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): 30ns, 28ns -3db Bandwidth: - Charge Injection: 5.8pC Channel Capacitance (CS(off), CD(off)): 81pF Current - Leakage (IS(off)) (Max): 1nA Crosstalk: -89dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: SOT-23-8 Supplier Device Package: SOT-23-8	paquet: SOT-23-8	Stock3 392
DG2043DN-T1-E4	Vishay Siliconix	IC SWITCH QUAD SPST 16QFN Switch Circuit: SPST - NO/NC Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 4 On-State Resistance (Max): 1.5 Ohm Channel-to-Channel Matching (ΔRon): 300 mOhm (Max) Voltage - Supply, Single (V+): 1.8 V ~ 5.5 V Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): 42ns, 32ns -3db Bandwidth: - Charge Injection: 3pC Channel Capacitance (CS(off), CD(off)): 26pF Current - Leakage (IS(off)) (Max): 1nA Crosstalk: -93dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-VQFN Exposed Pad Supplier Device Package: 16-QFN (4x4)	paquet: 16-VQFN Exposed Pad	Stock6 208
DG412HSDJ-E3	Vishay Siliconix	IC SWITCH QUAD SPST 16-DIP Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 4 On-State Resistance (Max): 35 Ohm Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): 12V Voltage - Supply, Dual (V±): ±5 V ~ 20 V Switch Time (Ton, Toff) (Max): 105ns, 80ns -3db Bandwidth: - Charge Injection: 22pC Channel Capacitance (CS(off), CD(off)): 12pF, 12pF Current - Leakage (IS(off)) (Max): 250pA Crosstalk: -88dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	paquet: 16-DIP (0.300", 7.62mm)	Stock6 636
DG4053EEY-T1-GE3	Vishay Siliconix	IC MUX TRIPLE 2CHAN 16-SOIC Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Circuits: 3 On-State Resistance (Max): 78 Ohm Channel-to-Channel Matching (ΔRon): 910 mOhm Voltage - Supply, Single (V+): 3 V ~ 16 V Voltage - Supply, Dual (V±): ±3 V ~ 8 V Switch Time (Ton, Toff) (Max): 75ns, 88ns -3db Bandwidth: 930MHz Charge Injection: 0.3pC Channel Capacitance (CS(off), CD(off)): 2pF, 3.1pF Current - Leakage (IS(off)) (Max): 1nA Crosstalk: -105dB @ 100kHz Operating Temperature: -40°C ~ 125°C (TA) Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	paquet: 16-SOIC (0.154", 3.90mm Width)	Stock2 336
DG9411DL-T1-E3	Vishay Siliconix	IC ANALOG SWITCH SPDT LV SC70-6 Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Circuits: 1 On-State Resistance (Max): 12 Ohm Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): 2.25 V ~ 5.5 V Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): 11ns, 7ns -3db Bandwidth: - Charge Injection: 10pC Channel Capacitance (CS(off), CD(off)): 7pF, 20pF Current - Leakage (IS(off)) (Max): 1nA Crosstalk: -70dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	paquet: 6-TSSOP, SC-88, SOT-363	Stock1 158 840
DG542DY-E3	Vishay Siliconix	IC SWITCH QUAD SPST 16SOIC Applications: Video Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST Number of Channels: 4 On-State Resistance (Max): 60 Ohm Voltage - Supply, Single (V+): 3 V ~ 15 V Voltage - Supply, Dual (V±): ±3 V ~ 15 V -3db Bandwidth: 500MHz Features: RGB, T-Switch Configuration Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	paquet: 16-SOIC (0.154", 3.90mm Width)	Stock7 888
SIHP052N60EF-GE3	Vishay Siliconix	MOSFET EF SERIES TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 23A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	paquet: -	Stock3 000
SIHP28N65E-GE3	Vishay Siliconix	MOSFET N-CH 650V 29A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3405 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 112mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	paquet: -	Request a Quote
SIJH5800E-T1-GE3	Vishay Siliconix	N-CHANNEL 80 V (D-S) 175C MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 302A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7730 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 333W (Tc) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: PowerPAK® 8 x 8	paquet: -	Stock12 075
SI2343CDS-T1-BE3	Vishay Siliconix	P-CHANNEL 30-V (D-S) MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 5.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	paquet: -	Stock17 805
SIHFR9310-GE3	Vishay Siliconix	MOSFET P-CH 400V 1.8A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400 V Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	paquet: -	Request a Quote
DG418LEDY-T1-GE3	Vishay Siliconix	IC ANALOG SWITCH 8SOIC Switch Circuit: - Multiplexer/Demultiplexer Circuit: - Number of Circuits: - On-State Resistance (Max): - Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): 3V ~ 16V Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): - -3db Bandwidth: - Charge Injection: - Channel Capacitance (CS(off), CD(off)): - Current - Leakage (IS(off)) (Max): - Crosstalk: - Operating Temperature: - Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	paquet: -	Request a Quote
SI1553CDL-T1-BE3	Vishay Siliconix	MOSFET N/P-CH 20V 0.7A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 700mA, 4.5V, 850mOhm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V, 3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V, 43pF @ 10V Power - Max: 290mW (Ta), 340mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	paquet: -	Request a Quote

2N5115JTVL02

Vishay Siliconix

JFET P-CH 30V TO-18

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)

paquet: TO-206AA, TO-18-3 Metal Can

Stock5 024

IRFI9Z14G

Vishay Siliconix

MOSFET P-CH 60V 5.3A TO220FP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 500 mOhm @ 3.2A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3 Full Pack, Isolated Tab

paquet: TO-220-3 Full Pack, Isolated Tab

Stock438 000

IRFI9Z14GPBF

Vishay Siliconix

MOSFET P-CH 60V 5.3A TO220FP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 500 mOhm @ 3.2A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3 Full Pack, Isolated Tab

paquet: TO-220-3 Full Pack, Isolated Tab

Stock29 100

SIR688DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 60V 60A PPAK SO-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3105pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? SO-8
Package / Case: PowerPAK? SO-8

paquet: PowerPAK? SO-8

Stock5 376

SQM120P04-04L_GE3

Vishay Siliconix

MOSFET P-CH 40V 120A TO-263

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13980pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2 176

IRFP140PBF

Vishay Siliconix

MOSFET N-CH 100V 31A TO-247AC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 77 mOhm @ 19A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

paquet: TO-247-3

Stock61 752

IRFZ20PBF

Vishay Siliconix

MOSFET N-CH 50V 15A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

paquet: TO-220-3

Stock16 842

SIR880ADP-T1-GE3

Vishay Siliconix

MOSFET N-CH 80V 60A PPAK SO-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2289pF @ 40V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? SO-8
Package / Case: PowerPAK? SO-8

paquet: PowerPAK? SO-8

Stock720 000

IRFR110TRPBF

Vishay Siliconix

MOSFET N-CH 100V 4.3A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 540 mOhm @ 2.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock70 356

SIB914DK-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 8V 1.5A PPAK SC75-6

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: 113 mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 4V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-75-6L Dual
Supplier Device Package: PowerPAK? SC-75-6L Dual

paquet: PowerPAK? SC-75-6L Dual

Stock3 328

SI7940DP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 12V 7.6A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 7.6A
Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

paquet: PowerPAK? SO-8 Dual

Stock5 488

SI7946DP-T1-E3

Vishay Siliconix

MOSFET 2N-CH 150V 2.1A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Rds On (Max) @ Id, Vgs: 150 mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

paquet: PowerPAK? SO-8 Dual

Stock36 000

SQJQ904E-T1_GE3

Vishay Siliconix

MOSFET ARRAY 2N-CH 40V PWRPAK8X8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 20V
Power - Max: 75W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 8 x 8 Dual
Supplier Device Package: PowerPAK? 8 x 8 Dual

paquet: PowerPAK? 8 x 8 Dual

Stock20 748

SJM185BEA

Vishay Siliconix

IC ANALOG SWITCH

Switch Circuit: -
Multiplexer/Demultiplexer Circuit: -
Number of Circuits: -
On-State Resistance (Max): -
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): -
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): -
-3db Bandwidth: -
Charge Injection: -
Channel Capacitance (CS(off), CD(off)): -
Current - Leakage (IS(off)) (Max): -
Crosstalk: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

paquet: -

Stock7 856

DG333ALDJ

Vishay Siliconix

IC SWITCH QUAD SPDT 20DIP

Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 1
On-State Resistance (Max): 45 Ohm
Channel-to-Channel Matching (ΔRon): 2 Ohm (Max)
Voltage - Supply, Single (V+): 5 V ~ 40 V
Voltage - Supply, Dual (V±): ±4 V ~ 22 V
Switch Time (Ton, Toff) (Max): 175ns, 145ns
-3db Bandwidth: -
Charge Injection: 10pC
Channel Capacitance (CS(off), CD(off)): 8pF
Current - Leakage (IS(off)) (Max): 250pA
Crosstalk: -80dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 20-DIP (0.300", 7.62mm)
Supplier Device Package: 20-PDIP

paquet: 20-DIP (0.300", 7.62mm)

Stock7 712

DG2742DS-T1-E3

Vishay Siliconix

IC SWITCH 2 X SPST 8 OHM SOT23-8

Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 2
On-State Resistance (Max): 800 mOhm
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): 1.5 V ~ 3.6 V
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): 30ns, 28ns
-3db Bandwidth: -
Charge Injection: 5.8pC
Channel Capacitance (CS(off), CD(off)): 81pF
Current - Leakage (IS(off)) (Max): 1nA
Crosstalk: -89dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: SOT-23-8
Supplier Device Package: SOT-23-8

paquet: SOT-23-8

Stock3 392

DG2043DN-T1-E4

Vishay Siliconix

IC SWITCH QUAD SPST 16QFN

Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 1.5 Ohm
Channel-to-Channel Matching (ΔRon): 300 mOhm (Max)
Voltage - Supply, Single (V+): 1.8 V ~ 5.5 V
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): 42ns, 32ns
-3db Bandwidth: -
Charge Injection: 3pC
Channel Capacitance (CS(off), CD(off)): 26pF
Current - Leakage (IS(off)) (Max): 1nA
Crosstalk: -93dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-VQFN Exposed Pad
Supplier Device Package: 16-QFN (4x4)

paquet: 16-VQFN Exposed Pad

Stock6 208

DG412HSDJ-E3

Vishay Siliconix

IC SWITCH QUAD SPST 16-DIP

Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 35 Ohm
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±5 V ~ 20 V
Switch Time (Ton, Toff) (Max): 105ns, 80ns
-3db Bandwidth: -
Charge Injection: 22pC
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Crosstalk: -88dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-PDIP

paquet: 16-DIP (0.300", 7.62mm)

Stock6 636

DG4053EEY-T1-GE3

Vishay Siliconix

IC MUX TRIPLE 2CHAN 16-SOIC

Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 3
On-State Resistance (Max): 78 Ohm
Channel-to-Channel Matching (ΔRon): 910 mOhm
Voltage - Supply, Single (V+): 3 V ~ 16 V
Voltage - Supply, Dual (V±): ±3 V ~ 8 V
Switch Time (Ton, Toff) (Max): 75ns, 88ns
-3db Bandwidth: 930MHz
Charge Injection: 0.3pC
Channel Capacitance (CS(off), CD(off)): 2pF, 3.1pF
Current - Leakage (IS(off)) (Max): 1nA
Crosstalk: -105dB @ 100kHz
Operating Temperature: -40°C ~ 125°C (TA)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

paquet: 16-SOIC (0.154", 3.90mm Width)

Stock2 336

DG9411DL-T1-E3

Vishay Siliconix

IC ANALOG SWITCH SPDT LV SC70-6

Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 1
On-State Resistance (Max): 12 Ohm
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): 2.25 V ~ 5.5 V
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): 11ns, 7ns
-3db Bandwidth: -
Charge Injection: 10pC
Channel Capacitance (CS(off), CD(off)): 7pF, 20pF
Current - Leakage (IS(off)) (Max): 1nA
Crosstalk: -70dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

paquet: 6-TSSOP, SC-88, SOT-363

Stock1 158 840

DG542DY-E3

Vishay Siliconix

IC SWITCH QUAD SPST 16SOIC

Applications: Video
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST
Number of Channels: 4
On-State Resistance (Max): 60 Ohm
Voltage - Supply, Single (V+): 3 V ~ 15 V
Voltage - Supply, Dual (V±): ±3 V ~ 15 V
-3db Bandwidth: 500MHz
Features: RGB, T-Switch Configuration
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

paquet: 16-SOIC (0.154", 3.90mm Width)

Stock7 888

SIHP052N60EF-GE3

Vishay Siliconix

MOSFET EF SERIES TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 100 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 23A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

paquet: -

Stock3 000

SIHP28N65E-GE3

Vishay Siliconix

MOSFET N-CH 650V 29A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3405 pF @ 100 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 14A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

paquet: -

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SIJH5800E-T1-GE3

Vishay Siliconix

N-CHANNEL 80 V (D-S) 175C MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 302A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7730 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.3W (Ta), 333W (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 8 x 8
Package / Case: PowerPAK® 8 x 8

paquet: -

Stock12 075

SI2343CDS-T1-BE3

Vishay Siliconix

P-CHANNEL 30-V (D-S) MOSFET

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 5.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3

paquet: -

Stock17 805

SIHFR9310-GE3

Vishay Siliconix

MOSFET P-CH 400V 1.8A DPAK

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400 V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

paquet: -

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DG418LEDY-T1-GE3

Vishay Siliconix

IC ANALOG SWITCH 8SOIC

Switch Circuit: -
Multiplexer/Demultiplexer Circuit: -
Number of Circuits: -
On-State Resistance (Max): -
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): -
-3db Bandwidth: -
Charge Injection: -
Channel Capacitance (CS(off), CD(off)): -
Current - Leakage (IS(off)) (Max): -
Crosstalk: -
Operating Temperature: -
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

paquet: -

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SI1553CDL-T1-BE3

Vishay Siliconix

MOSFET N/P-CH 20V 0.7A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 700mA, 4.5V, 850mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V, 3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V, 43pF @ 10V
Power - Max: 290mW (Ta), 340mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

paquet: -

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