Page 67 - Produits Toshiba Semiconductor and Storage

Référence	Fabricant	Description	paquet	Stock
TPH2900ENH,L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 200V 33A SOP8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 33A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 29 mOhm @ 16.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	paquet: 8-PowerVDFN	Stock4 416
SSM5G10TU(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 1.5A UFV FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Vgs (Max): ±8V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 213 mOhm @ 1A, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UFV Package / Case: 6-SMD (5 Leads), Flat Lead	paquet: 6-SMD (5 Leads), Flat Lead	Stock36 000
TPH3R003PL,LQ	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 88A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3825pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 44A, 4.5V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	paquet: 8-PowerVDFN	Stock26 286
TPH8R903NL,LQ	Toshiba Semiconductor and Storage	MOSFET N CH 30V 20A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 24W (Tc) Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	paquet: 8-PowerVDFN	Stock29 610
TK9J90E,S1E	Toshiba Semiconductor and Storage	MOSFET N-CH 900V TO-3PN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 900µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 4.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P(N) Package / Case: TO-3P-3, SC-65-3	paquet: TO-3P-3, SC-65-3	Stock16 284
TPC8213-H(TE12LQ,M	Toshiba Semiconductor and Storage	MOSFET 2N-CH 60V 5A SOP8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 10V Power - Max: 450mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP (5.5x6.0)	paquet: 8-SOIC (0.173", 4.40mm Width)	Stock7 136
2SC5171,MATUDQ(J	Toshiba Semiconductor and Storage	TRANS NPN 2A 180V TO220-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	paquet: TO-220-3 Full Pack	Stock5 584
2SC2235-O(T6FJT,AF	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	paquet: TO-226-3, TO-92-3 Long Body	Stock2 752
RN1908FE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2NPN PREBIAS 0.1W ES6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	paquet: SOT-563, SOT-666	Stock33 144
CRH01(TE85R,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 1A SFLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C	paquet: SOD-123F	Stock6 320
TA58M05S,KDQ(M	Toshiba Semiconductor and Storage	IC REG LINEAR 500MA LSTM Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 500mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 105°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: LSTM	paquet: TO-220-3 Full Pack	Stock5 184
TB6562ANG,8	Toshiba Semiconductor and Storage	IC MOTOR DVR BIPO STEPPING Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: DMOS Step Resolution: 1, 1/2, 1/4 Applications: General Purpose Current - Output: 1.5A Voltage - Supply: 10 V ~ 34 V Voltage - Load: 10 V ~ 34 V Operating Temperature: -20°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 24-SDIP (0.300", 7.62mm) Supplier Device Package: 24-SDIP	paquet: 24-SDIP (0.300", 7.62mm)	Stock6 848
TB67S158FTG,EL	Toshiba Semiconductor and Storage	IC STEP MOTOR DRVR PAR 48WQFN Motor Type - Stepper: Unipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (8) Interface: Parallel Technology: DMOS Step Resolution: - Applications: General Purpose Current - Output: 1.5A Voltage - Supply: 4.75 V ~ 5.25 V Voltage - Load: 10 V ~ 60 V Operating Temperature: -20°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 48-WFQFN Exposed Pad Supplier Device Package: 48-WQFN (7x7)	paquet: 48-WFQFN Exposed Pad	Stock7 584
74HC237D(BJ)	Toshiba Semiconductor and Storage	IC 3:8 LINE DECODER 16SOIC Type: Decoder Circuit: 1 x 3:8 Independent Circuits: 1 Current - Output High, Low: 5.2mA, 5.2mA Voltage Supply Source: Single Supply Voltage - Supply: 2 V ~ 6 V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	paquet: 16-SOIC (0.154", 3.90mm Width)	Stock26 058
TC7W02FUTE12LF	Toshiba Semiconductor and Storage	IC GATE NOR 2CH 2-INP SM8 Logic Type: NOR Gate Number of Circuits: 2 Number of Inputs: 2 Features: - Voltage - Supply: 2 V ~ 6 V Current - Quiescent (Max): 1µA Current - Output High, Low: 5.2mA, 5.2mA Logic Level - Low: 0.5 V ~ 1.8 V Logic Level - High: 1.5 V ~ 4.2 V Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: SM8 Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)	paquet: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)	Stock45 834
TC74ACT00FTEL	Toshiba Semiconductor and Storage	IC GATE NAND 4CH 2-INP 14TSSOP Logic Type: NAND Gate Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 4.5 V ~ 5.5 V Current - Quiescent (Max): 4µA Current - Output High, Low: 24mA, 24mA Logic Level - Low: 0.8V Logic Level - High: 2V Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-TSSOP Package / Case: 14-TSSOP (0.173", 4.40mm Width)	paquet: 14-TSSOP (0.173", 4.40mm Width)	Stock35 706
74VHC02FT(BJ)	Toshiba Semiconductor and Storage	IC GATE NOR 4CH 2-INP 14TSSOP Logic Type: NOR Gate Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 2 V ~ 5.5 V Current - Quiescent (Max): 2µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.5V Logic Level - High: 1.5V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: 14-TSSOPB Package / Case: 14-TSSOP (0.173", 4.40mm Width)	paquet: 14-TSSOP (0.173", 4.40mm Width)	Stock57 066
TL1WK-NT1,LCS	Toshiba Semiconductor and Storage	LED LETERAS COOL WHT 5700K 2SMD Color: White, Cool CCT (K): 5700K Flux @ 85°C, Current - Test: - Flux @ 25°C, Current - Test: 22 lm (Typ) Current - Test: 60mA Voltage - Forward (Vf) (Typ): 2.8V Lumens/Watt @ Current - Test: 130 lm/W CRI (Color Rendering Index): 80 Current - Max: 180mA Viewing Angle: 165° Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: SMD Size / Dimension: 0.026" L x 0.026" W (0.65mm x 0.65mm) Height - Seated (Max): 0.015" (0.39mm)	paquet: 2-SMD, No Lead	Stock8 910
DF2S6.2FS,L3M	Toshiba Semiconductor and Storage	TVS DIODE 5VWM Type: Zener Unidirectional Channels: 1 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 5V Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: - Current - Peak Pulse (10/1000µs): - Power - Peak Pulse: - Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 32pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOD-923 Supplier Device Package: SOD-923	paquet: SOD-923	Stock6 282
DF2S30CT,L3F	Toshiba Semiconductor and Storage	TVS DIODE 23VWM Type: Zener Unidirectional Channels: 1 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 23V Voltage - Breakdown (Min): 28V Voltage - Clamping (Max) @ Ipp: - Current - Peak Pulse (10/1000µs): - Power - Peak Pulse: - Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 7.2pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: CST2	paquet: SOD-882	Stock94 266
TLP293(YH-TPL,E	Toshiba Semiconductor and Storage	OPTOISOLATOR 3.75KV TRANS 4-SO Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 75% @ 500µA Current Transfer Ratio (Max): 150% @ 500µA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Package / Case: 4-SOIC (0.179", 4.55mm) Supplier Device Package: 4-SO	paquet: 4-SOIC (0.179", 4.55mm)	Stock4 356
TLP785(GR-TP6,F)	Toshiba Semiconductor and Storage	OPTOISOLATR 5KV TRANSISTOR 4-SMD Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 300% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 60mA Vce Saturation (Max): 400mV Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: 4-SMD	paquet: 4-SMD, Gull Wing	Stock111 264
SSM10N954L-EFF	Toshiba Semiconductor and Storage	COMMON-DRAIN NCH MOSFET, 12V, 13 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1.11mA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: TCSPAC-153001 Package / Case: 10-SMD, No Lead	paquet: -	Stock30 000
TCR2LN28-LF-SE	Toshiba Semiconductor and Storage	LDO REG VOUT=2.8V I=200MA Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 2.8V Voltage - Output (Max): - Voltage Dropout (Max): 0.36V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 2 µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	paquet: -	Stock25 452
TPH9R00CQH-LQ	Toshiba Semiconductor and Storage	UMOS10 SOP-ADV(N) 150V 9MOHM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960mW (Ta), 210W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 32A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	paquet: -	Stock27 105
SSM3J372R-LXHF	Toshiba Semiconductor and Storage	AECQ MOSFET PCH -30V -6A SOT23F FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V Vgs (Max): +6V, -12V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	paquet: -	Stock30 726
SSM3K16CTC-L3F	Toshiba Semiconductor and Storage	MOSFET N-CH 20V 200MA CST3C FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: CST3C Package / Case: SC-101, SOT-883	paquet: -	Stock55 089
TPH1R204PL1-LQ	Toshiba Semiconductor and Storage	UMOS9 SOP-ADV(N) PD=170W F=1MHZ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960mW (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5.75) Package / Case: 8-PowerTDFN	paquet: -	Stock65 853

TPH2900ENH,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 200V 33A SOP8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 29 mOhm @ 16.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

paquet: 8-PowerVDFN

Stock4 416

SSM5G10TU(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 1.5A UFV

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Vgs (Max): ±8V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 213 mOhm @ 1A, 4V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: UFV
Package / Case: 6-SMD (5 Leads), Flat Lead

paquet: 6-SMD (5 Leads), Flat Lead

Stock36 000

TPH3R003PL,LQ

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 88A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.1V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3825pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 44A, 4.5V
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

paquet: 8-PowerVDFN

Stock26 286

TPH8R903NL,LQ

Toshiba Semiconductor and Storage

MOSFET N CH 30V 20A 8SOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta), 24W (Tc)
Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 10A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

paquet: 8-PowerVDFN

Stock29 610

TK9J90E,S1E

Toshiba Semiconductor and Storage

MOSFET N-CH 900V TO-3PN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 900µA
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 4.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P(N)
Package / Case: TO-3P-3, SC-65-3

paquet: TO-3P-3, SC-65-3

Stock16 284

TPC8213-H(TE12LQ,M

Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 5A SOP8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 10V
Power - Max: 450mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP (5.5x6.0)

paquet: 8-SOIC (0.173", 4.40mm Width)

Stock7 136

2SC5171,MATUDQ(J

Toshiba Semiconductor and Storage

TRANS NPN 2A 180V TO220-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 180V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 2W
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS

paquet: TO-220-3 Full Pack

Stock5 584

2SC2235-O(T6FJT,AF

Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Power - Max: 900mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

paquet: TO-226-3, TO-92-3 Long Body

Stock2 752

RN1908FE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

paquet: SOT-563, SOT-666

Stock33 144

CRH01(TE85R,Q,M)

Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 1A SFLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C

paquet: SOD-123F

Stock6 320

TA58M05S,KDQ(M

Toshiba Semiconductor and Storage

IC REG LINEAR 500MA LSTM

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 500mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 105°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: LSTM

paquet: TO-220-3 Full Pack

Stock5 184

TB6562ANG,8

Toshiba Semiconductor and Storage

IC MOTOR DVR BIPO STEPPING

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: Parallel
Technology: DMOS
Step Resolution: 1, 1/2, 1/4
Applications: General Purpose
Current - Output: 1.5A
Voltage - Supply: 10 V ~ 34 V
Voltage - Load: 10 V ~ 34 V
Operating Temperature: -20°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 24-SDIP (0.300", 7.62mm)
Supplier Device Package: 24-SDIP

paquet: 24-SDIP (0.300", 7.62mm)

Stock6 848

TB67S158FTG,EL

Toshiba Semiconductor and Storage

IC STEP MOTOR DRVR PAR 48WQFN

Motor Type - Stepper: Unipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (8)
Interface: Parallel
Technology: DMOS
Step Resolution: -
Applications: General Purpose
Current - Output: 1.5A
Voltage - Supply: 4.75 V ~ 5.25 V
Voltage - Load: 10 V ~ 60 V
Operating Temperature: -20°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-WFQFN Exposed Pad
Supplier Device Package: 48-WQFN (7x7)

paquet: 48-WFQFN Exposed Pad

Stock7 584

74HC237D(BJ)

Toshiba Semiconductor and Storage

IC 3:8 LINE DECODER 16SOIC

Type: Decoder
Circuit: 1 x 3:8
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Voltage - Supply: 2 V ~ 6 V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

paquet: 16-SOIC (0.154", 3.90mm Width)

Stock26 058

TC7W02FUTE12LF

Toshiba Semiconductor and Storage

IC GATE NOR 2CH 2-INP SM8

Logic Type: NOR Gate
Number of Circuits: 2
Number of Inputs: 2
Features: -
Voltage - Supply: 2 V ~ 6 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 5.2mA, 5.2mA
Logic Level - Low: 0.5 V ~ 1.8 V
Logic Level - High: 1.5 V ~ 4.2 V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: SM8
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

paquet: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

Stock45 834

TC74ACT00FTEL

Toshiba Semiconductor and Storage

IC GATE NAND 4CH 2-INP 14TSSOP

Logic Type: NAND Gate
Number of Circuits: 4
Number of Inputs: 2
Features: -
Voltage - Supply: 4.5 V ~ 5.5 V
Current - Quiescent (Max): 4µA
Current - Output High, Low: 24mA, 24mA
Logic Level - Low: 0.8V
Logic Level - High: 2V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)

paquet: 14-TSSOP (0.173", 4.40mm Width)

Stock35 706

74VHC02FT(BJ)

Toshiba Semiconductor and Storage

IC GATE NOR 4CH 2-INP 14TSSOP

Logic Type: NOR Gate
Number of Circuits: 4
Number of Inputs: 2
Features: -
Voltage - Supply: 2 V ~ 5.5 V
Current - Quiescent (Max): 2µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.5V
Logic Level - High: 1.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: 14-TSSOPB
Package / Case: 14-TSSOP (0.173", 4.40mm Width)

paquet: 14-TSSOP (0.173", 4.40mm Width)

Stock57 066

TL1WK-NT1,LCS

Toshiba Semiconductor and Storage

LED LETERAS COOL WHT 5700K 2SMD

Color: White, Cool
CCT (K): 5700K
Flux @ 85°C, Current - Test: -
Flux @ 25°C, Current - Test: 22 lm (Typ)
Current - Test: 60mA
Voltage - Forward (Vf) (Typ): 2.8V
Lumens/Watt @ Current - Test: 130 lm/W
CRI (Color Rendering Index): 80
Current - Max: 180mA
Viewing Angle: 165°
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: SMD
Size / Dimension: 0.026" L x 0.026" W (0.65mm x 0.65mm)
Height - Seated (Max): 0.015" (0.39mm)

paquet: 2-SMD, No Lead

Stock8 910

DF2S6.2FS,L3M

Toshiba Semiconductor and Storage

TVS DIODE 5VWM

Type: Zener
Unidirectional Channels: 1
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 5V
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: -
Current - Peak Pulse (10/1000µs): -
Power - Peak Pulse: -
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOD-923
Supplier Device Package: SOD-923

paquet: SOD-923

Stock6 282

DF2S30CT,L3F

Toshiba Semiconductor and Storage

TVS DIODE 23VWM

Type: Zener
Unidirectional Channels: 1
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 23V
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: -
Current - Peak Pulse (10/1000µs): -
Power - Peak Pulse: -
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 7.2pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOD-882
Supplier Device Package: CST2

paquet: SOD-882

Stock94 266

TLP293(YH-TPL,E

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS 4-SO

Number of Channels: 1
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 75% @ 500µA
Current Transfer Ratio (Max): 150% @ 500µA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 4-SOIC (0.179", 4.55mm)
Supplier Device Package: 4-SO

paquet: 4-SOIC (0.179", 4.55mm)

Stock4 356

TLP785(GR-TP6,F)

Toshiba Semiconductor and Storage

OPTOISOLATR 5KV TRANSISTOR 4-SMD

Number of Channels: 1
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Current Transfer Ratio (Max): 300% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.15V
Current - DC Forward (If) (Max): 60mA
Vce Saturation (Max): 400mV
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: 4-SMD

paquet: 4-SMD, Gull Wing

Stock111 264

SSM10N954L-EFF

Toshiba Semiconductor and Storage

COMMON-DRAIN NCH MOSFET, 12V, 13

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 1.11mA
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: TCSPAC-153001
Package / Case: 10-SMD, No Lead

paquet: -

Stock30 000

TCR2LN28-LF-SE

Toshiba Semiconductor and Storage

LDO REG VOUT=2.8V I=200MA

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 2.8V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.36V @ 150mA
Current - Output: 200mA
Current - Quiescent (Iq): 2 µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

paquet: -

Stock25 452

TPH9R00CQH-LQ

Toshiba Semiconductor and Storage

UMOS10 SOP-ADV(N) 150V 9MOHM

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs(th) (Max) @ Id: 4.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 75 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 960mW (Ta), 210W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 32A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

paquet: -

Stock27 105

SSM3J372R-LXHF

Toshiba Semiconductor and Storage

AECQ MOSFET PCH -30V -6A SOT23F

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
Vgs (Max): +6V, -12V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: SOT-23F
Package / Case: SOT-23-3 Flat Leads

paquet: -

Stock30 726

SSM3K16CTC-L3F

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 200MA CST3C

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: CST3C
Package / Case: SC-101, SOT-883

paquet: -

Stock55 089

TPH1R204PL1-LQ

Toshiba Semiconductor and Storage

UMOS9 SOP-ADV(N) PD=170W F=1MHZ

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5.75)
Package / Case: 8-PowerTDFN

paquet: -

Stock65 853