Page 65 - Produits Toshiba Semiconductor and Storage | Heisener Electronics
Contactez nous
SalesDept@heisener.com +86-755-83210559-827
Connexion/S'inscrire
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Chariot 0

Produits Toshiba Semiconductor and Storage

Dossiers 4 549
Page  65/163
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
TK18A50D(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 500V 18A TO-220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 270 mOhm @ 9A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
paquet: TO-220-3 Full Pack
Stock4 736
TK16A60W,S4X
Toshiba Semiconductor and Storage

MOSFET N CH 600V 15.8A DTMOSIV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 15.8A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 790µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 300V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.9A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3 Full Pack
paquet: TO-220-3 Full Pack
Stock6 240
TK14E65W5,S1X
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 13.7A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 690µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 300V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.9A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock7 548
SSM6L16FETE85LF
Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.18A/0.1A ES6

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.1V @ 0.1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
paquet: SOT-563, SOT-666
Stock3 408
RN1425TE85LF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 200MW SMINI

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 470
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 300MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
paquet: TO-236-3, SC-59, SOT-23-3
Stock6 480
2SC5088-O(TE85L,F)
Toshiba Semiconductor and Storage

TRANS RF NPN 12V 500MHZ USQ

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1dB @ 500MHz
  • Gain: 18dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: USQ
paquet: SC-82A, SOT-343
Stock5 760
1SV323,H3F
Toshiba Semiconductor and Storage

DIODE VARACTOR 10V ESC

  • Capacitance @ Vr, F: 7.1pF @ 4V, 1MHz
  • Capacitance Ratio: 4.3
  • Capacitance Ratio Condition: C1/C4
  • Voltage - Peak Reverse (Max): 10V
  • Diode Type: Single
  • Q @ Vr, F: -
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: ESC
paquet: SC-79, SOD-523
Stock2 896
hot CRF03(TE85L,Q,M)
Toshiba Semiconductor and Storage

DIODE GEN PURP 600V 700MA SFLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 700mA
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 700mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: S-FLAT (1.6x3.5)
  • Operating Temperature - Junction: -40°C ~ 150°C
paquet: SOD-123F
Stock720 000
CTS520,L3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 200MA CST2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 30V
  • Capacitance @ Vr, F: 16pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-882
  • Supplier Device Package: CST2
  • Operating Temperature - Junction: 125°C (Max)
paquet: SOD-882
Stock187 992
TA78L005AP,SDENF(J
Toshiba Semiconductor and Storage

IC REG LINEAR 150MA LSTM

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: 1
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 150mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -30°C ~ 85°C
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: LSTM
paquet: TO-226-3, TO-92-3 Long Body
Stock5 424
TB6674FG,8,EL
Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 16HSOP

  • Motor Type - Stepper: Bipolar
  • Motor Type - AC, DC: -
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (4)
  • Interface: Parallel
  • Technology: Power MOSFET
  • Step Resolution: -
  • Applications: General Purpose
  • Current - Output: 350mA
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Voltage - Load: 2.7 V ~ 22 V
  • Operating Temperature: -30°C ~ 75°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
  • Supplier Device Package: 16-HSOP
paquet: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Stock2 880
TB67B008FNG,EL
Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 24SSOP

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: Brushless DC (BLDC)
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (3)
  • Interface: PWM
  • Technology: Power MOSFET
  • Step Resolution: -
  • Applications: General Purpose
  • Current - Output: 3A
  • Voltage - Supply: 5.5 V ~ 22 V
  • Voltage - Load: 5.5 V ~ 22 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-LSSOP (0.220", 5.60mm Width)
  • Supplier Device Package: 24-SSOP
paquet: 24-LSSOP (0.220", 5.60mm Width)
Stock2 432
TC74VHC595F(EL,K,F
Toshiba Semiconductor and Storage

IC 8-BIT SHIFT REGISTER 16SOP

  • Logic Type: Shift Register
  • Output Type: Tri-State
  • Number of Elements: 1
  • Number of Bits per Element: 8
  • Function: Serial to Parallel
  • Voltage - Supply: 2 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 16-SOP
paquet: 16-SOIC (0.209", 5.30mm Width)
Stock16 494
TC74VHC00FTELM
Toshiba Semiconductor and Storage

IC GATE NAND 4CH 2-INP 14-TSSOP

  • Logic Type: NAND Gate
  • Number of Circuits: 4
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 2 V ~ 5.5 V
  • Current - Quiescent (Max): 2µA
  • Current - Output High, Low: 8mA, 8mA
  • Logic Level - Low: 0.5V
  • Logic Level - High: 1.5V
  • Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 14-TSSOP
  • Package / Case: 14-TSSOP (0.173", 4.40mm Width)
paquet: 14-TSSOP (0.173", 4.40mm Width)
Stock4 560
TC74VCX2125FTEL
Toshiba Semiconductor and Storage

IC BUFF NON-INVERT 3.6V 14TSSOP

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 4
  • Number of Bits per Element: 1
  • Input Type: -
  • Output Type: Push-Pull
  • Current - Output High, Low: 12mA, 12mA
  • Voltage - Supply: 1.8 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 14-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 14-TSSOP
paquet: 14-TSSOP (0.173", 4.40mm Width)
Stock34 260
TC75S51FUTE85LF
Toshiba Semiconductor and Storage

IC OP AMP GP CMOS USV

  • Amplifier Type: General Purpose
  • Number of Circuits: 1
  • Output Type: -
  • Slew Rate: 0.5 V/µs
  • Gain Bandwidth Product: -
  • -3db Bandwidth: -
  • Current - Input Bias: 1pA
  • Voltage - Input Offset: 2mV
  • Current - Supply: 60µA
  • Current - Output / Channel: -
  • Voltage - Supply, Single/Dual (±): 1.5 V ~ 7 V, ±0.75 V ~ 3.5 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: USV
paquet: 5-TSSOP, SC-70-5, SOT-353
Stock25 320
DF2S20CT,L3F
Toshiba Semiconductor and Storage

TVS DIODE 15VWM

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 15V
  • Voltage - Breakdown (Min): 18.8V
  • Voltage - Clamping (Max) @ Ipp: -
  • Current - Peak Pulse (10/1000µs): -
  • Power - Peak Pulse: -
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 9pF @ 1MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-882
  • Supplier Device Package: CST2
paquet: SOD-882
Stock76 896
TLP184(TPL,SE
Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

  • Number of Channels: 1
  • Voltage - Isolation: 3750Vrms
  • Current Transfer Ratio (Min): 50% @ 5mA
  • Current Transfer Ratio (Max): 600% @ 5mA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: AC, DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.25V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 300mV
  • Operating Temperature: -55°C ~ 110°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD (4 Leads), Gull Wing
  • Supplier Device Package: 6-SO, 4 Lead
paquet: 6-SMD (4 Leads), Gull Wing
Stock3 996
TLP624LF1F
Toshiba Semiconductor and Storage

OPTOISOLATR 5KV TRANSISTOR 4-SMD

  • Number of Channels: 1
  • Voltage - Isolation: 5000Vrms
  • Current Transfer Ratio (Min): 100% @ 1mA
  • Current Transfer Ratio (Max): 1200% @ 1mA
  • Turn On / Turn Off Time (Typ): 10µs, 8µs
  • Rise / Fall Time (Typ): 8µs, 8µs
  • Input Type: DC
  • Output Type: Transistor
  • Voltage - Output (Max): 55V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.15V
  • Current - DC Forward (If) (Max): 60mA
  • Vce Saturation (Max): 400mV
  • Operating Temperature: -55°C ~ 100°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: 4-SMD
paquet: 4-SMD, Gull Wing
Stock7 560
TC7SPB9307TU,LF(CT
Toshiba Semiconductor and Storage

X34 GENERAL-PURPOSE BUS SWITCH L

  • Type: Bus Switch
  • Circuit: 1 x 1:1
  • Independent Circuits: 1
  • Current - Output High, Low: -
  • Voltage Supply Source: Dual Supply
  • Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: UF6
paquet: 6-SMD, Flat Leads
Stock24 276
TCR5BM105,L3F
Toshiba Semiconductor and Storage

500MA LDO VOUT=1.05V DROPOUT=100

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 1.05V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.14V @ 500mA
  • Current - Output: 500mA
  • Current - Quiescent (Iq): 36µA
  • Current - Supply (Max): -
  • PSRR: 98dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XDFN Exposed Pad
  • Supplier Device Package: 5-DFNB (1.2x1.2)
paquet: 4-XDFN Exposed Pad
Stock100 902
RN1410-LXHF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SMINI

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 4.7 kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250 MHz
  • Power - Max: 200 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
paquet: -
Stock18 000
SSM6J402TU-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 30V 2A UF6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 117mOhm @ 1A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UF6
  • Package / Case: 6-SMD, Flat Leads
paquet: -
Stock18 570
GT50J341-Q
Toshiba Semiconductor and Storage

PB-F IGBT / TRANSISTOR TO-3PN IC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 100 A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
  • Power - Max: 200 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P(N)
paquet: -
Stock288
SSM3K2615TU-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 2A UFM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads
paquet: -
Stock43 317
TB9044AFNG-EL
Toshiba Semiconductor and Storage

AUTOMOTIVE VOLTAGE REGULATOR

  • Applications: Power Supply, Automotive Applications
  • Voltage - Input: -
  • Number of Outputs: 2
  • Voltage - Output: 6V
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
  • Supplier Device Package: 48-HTSSOP
paquet: -
Request a Quote
SSM14N956L-EFF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 12V 20A TCSPED

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 1.57mA
  • Gate Charge (Qg) (Max) @ Vgs: 76nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.33W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 14-SMD, No Lead
  • Supplier Device Package: TCSPED-302701
paquet: -
Stock29 565
RN1908-LF-CT
Toshiba Semiconductor and Storage

NPNX2 BRT Q1BSR22KOHM Q1BER47KOH

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
paquet: -
Stock9 000