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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 13A TO220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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paquet: TO-220-3 Full Pack |
Stock3 456 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 45A 8SOP-ADV
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7420pF @ 10V
- Vgs (Max): +20V, -25V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
- Rds On (Max) @ Id, Vgs: 3 mOhm @ 22.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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paquet: 8-PowerVDFN |
Stock3 520 |
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Toshiba Semiconductor and Storage |
TRANS NPN 50V 0.15A SSM
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
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paquet: SC-75, SOT-416 |
Stock25 752 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.05W CST3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 50mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
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paquet: SC-101, SOT-883 |
Stock3 744 |
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Toshiba Semiconductor and Storage |
TRANS 2NPN 20V 0.3A SM6
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 300mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
- Power - Max: 300mW
- Frequency - Transition: 30MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SM6
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paquet: SC-74, SOT-457 |
Stock6 144 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 150MA LSTM
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 150mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -30°C ~ 85°C
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: LSTM
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paquet: TO-226-3, TO-92-3 Long Body |
Stock6 880 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 2.8V 200MA UFV
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 15V
- Voltage - Output (Min/Fixed): 2.8V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.2V @ 50mA
- Current - Output: 200mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 850µA
- PSRR: 70dB (1kHz)
- Control Features: Enable
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD (5 Leads), Flat Lead
- Supplier Device Package: UFV
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paquet: 6-SMD (5 Leads), Flat Lead |
Stock2 624 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 1.9V 200MA SMV
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 1.9V
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 200mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 60µA
- PSRR: 73dB (1kHz)
- Control Features: Enable
- Protection Features: Over Current
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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paquet: SC-74A, SOT-753 |
Stock24 246 |
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Toshiba Semiconductor and Storage |
IC LED DRVR LIN DIM 40MA 20SSOP
- Type: Linear
- Topology: -
- Internal Switch(s): Yes
- Number of Outputs: 9
- Voltage - Supply (Min): 3V
- Voltage - Supply (Max): 5.5V
- Voltage - Output: 4V
- Current - Output / Channel: 40mA
- Frequency: -
- Dimming: PWM
- Applications: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-LSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 20-SSOP
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paquet: 20-LSSOP (0.173", 4.40mm Width) |
Stock4 960 |
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Toshiba Semiconductor and Storage |
IC FLASH 64GBIT 52MHZ 153WFBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 64Gb (8G x 8)
- Memory Interface: MMC
- Clock Frequency: 52MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -25°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 153-WFBGA
- Supplier Device Package: 153-WFBGA (11.5x13)
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paquet: 153-WFBGA |
Stock15 768 |
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Toshiba Semiconductor and Storage |
IC EEPROM 2GBIT 25NS 67VFBGA
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM - NAND
- Memory Size: 2Gb (256M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 67-VFBGA
- Supplier Device Package: 67-VFBGA (6.5x8)
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paquet: 67-VFBGA |
Stock7 808 |
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Toshiba Semiconductor and Storage |
IC INVERTER HEX 16TSSOP
- Logic Type: Inverter
- Number of Circuits: 6
- Number of Inputs: 6
- Features: -
- Voltage - Supply: 2 V ~ 6 V
- Current - Quiescent (Max): 1µA
- Current - Output High, Low: 7.8mA, 7.8mA
- Logic Level - Low: 0.5 V ~ 1.8 V
- Logic Level - High: 1.5 V ~ 4.2 V
- Max Propagation Delay @ V, Max CL: 17ns @ 6V, 150pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: 16-TSSOP
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
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paquet: 16-TSSOP (0.173", 4.40mm Width) |
Stock19 662 |
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Toshiba Semiconductor and Storage |
74HC CMOS LOGIC IC SERIES SOIC14
- Logic Type: Inverter
- Number of Circuits: 6
- Number of Inputs: 6
- Features: -
- Voltage - Supply: 2 V ~ 6 V
- Current - Quiescent (Max): 1µA
- Current - Output High, Low: 5.2mA, 5.2mA
- Logic Level - Low: 0.5 V ~ 1.8 V
- Logic Level - High: 1.5 V ~ 4.2 V
- Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-SOIC
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
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paquet: 14-SOIC (0.154", 3.90mm Width) |
Stock26 202 |
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Toshiba Semiconductor and Storage |
IC D-TYPE POS TRG SNGL 20TSSOP
- Function: Standard
- Type: D-Type
- Output Type: Tri-State, Non-Inverted
- Number of Elements: 1
- Number of Bits per Element: 8
- Clock Frequency: 130MHz
- Max Propagation Delay @ V, Max CL: 10.4ns @ 5V, 50pF
- Trigger Type: Positive Edge
- Current - Output High, Low: 8mA, 8mA
- Voltage - Supply: 4.5 V ~ 5.5 V
- Current - Quiescent (Iq): 4µA
- Input Capacitance: 4pF
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-TSSOP (0.173", 4.40mm Width)
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paquet: 20-TSSOP (0.173", 4.40mm Width) |
Stock5 200 |
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Toshiba Semiconductor and Storage |
TVS DIODE 19VWM 22VC
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 19V (Max)
- Voltage - Breakdown (Min): 5.3V, 22V
- Voltage - Clamping (Max) @ Ipp: -
- Current - Peak Pulse (10/1000µs): -
- Power - Peak Pulse: -
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: 1.6pF @ 1MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SOD-923
- Supplier Device Package: fSC (SOD-923)
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paquet: SOD-923 |
Stock82 596 |
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Toshiba Semiconductor and Storage |
IC PHOTORELAY MOSFET 4-SOP
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 50 Ohm
- Load Current: 100mA
- Voltage - Input: 1.15VDC
- Voltage - Load: 0 ~ 350 V
- Mounting Type: Surface Mount
- Termination Style: Gull Wing
- Package / Case: 4-SOP (0.173", 4.40mm)
- Supplier Device Package: 4-SOP (2.54mm)
- Relay Type: Relay
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paquet: 4-SOP (0.173", 4.40mm) |
Stock2 052 |
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Toshiba Semiconductor and Storage |
PHOTORELAY SPST-NO 1A 20V
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 220 mOhm
- Load Current: 1A
- Voltage - Input: 1.27VDC
- Voltage - Load: 0 ~ 20 V
- Mounting Type: Surface Mount
- Termination Style: SMD (SMT) Tab
- Package / Case: 4-SMD (0.096", 2.45mm)
- Supplier Device Package: 4-VSON
- Relay Type: Relay
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paquet: 4-SMD (0.096", 2.45mm) |
Stock8 280 |
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Toshiba Semiconductor and Storage |
OPTOISO 3.75KV TRANS 6-SO 5 LEAD
- Number of Channels: 1
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): 20% @ 16mA
- Current Transfer Ratio (Max): -
- Turn On / Turn Off Time (Typ): 800ns, 800ns (Max)
- Rise / Fall Time (Typ): -
- Input Type: DC
- Output Type: Transistor
- Voltage - Output (Max): 20V
- Current - Output / Channel: 8mA
- Voltage - Forward (Vf) (Typ): 1.64V
- Current - DC Forward (If) (Max): 20mA
- Vce Saturation (Max): -
- Operating Temperature: -55°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
- Supplier Device Package: 6-SO, 5 Lead
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paquet: 6-SOIC (0.179", 4.55mm Width) 5 Leads |
Stock3 762 |
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Toshiba Semiconductor and Storage |
OPTOISO 5KV GATE DRVR SO6L
- Technology: Optical Coupling
- Number of Channels: 1
- Voltage - Isolation: 5000Vrms
- Common Mode Transient Immunity (Min): 35kV/µs
- Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
- Pulse Width Distortion (Max): 50ns
- Rise / Fall Time (Typ): 15ns, 8ns
- Current - Output High, Low: 3A, 3A
- Current - Peak Output: 4A
- Voltage - Forward (Vf) (Typ): 1.55V
- Current - DC Forward (If) (Max): 20mA
- Voltage - Supply: 15 V ~ 30 V
- Operating Temperature: -40°C ~ 110°C
- Mounting Type: Surface Mount
- Package / Case: 6-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 6-SO
- Approvals: CQC, CSA, cUL, UL
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paquet: 6-SOIC (0.295", 7.50mm Width) |
Stock12 882 |
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Toshiba Semiconductor and Storage |
IC FF D-TYPE SNGL 1BIT US8
- Function: Set(Preset) and Reset
- Type: D-Type
- Output Type: Differential
- Number of Elements: 1
- Number of Bits per Element: 1
- Clock Frequency: 67MHz
- Max Propagation Delay @ V, Max CL: 26ns @ 6V, 50pF
- Trigger Type: Positive Edge
- Current - Output High, Low: 5.2mA, 5.2mA
- Voltage - Supply: 2 V ~ 6 V
- Current - Quiescent (Iq): 2µA
- Input Capacitance: 5pF
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-VFSOP (0.091", 2.30mm Width)
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paquet: 8-VFSOP (0.091", 2.30mm Width) |
Stock311 358 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 1.1V 1.5A 6WCSP
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 6V
- Voltage - Output (Min/Fixed): 1.1V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.24V @ 1.5A
- Current - Output: 1.5A
- Current - Quiescent (Iq): 40µA
- Current - Supply (Max): -
- PSRR: 95dB ~ 60dB (1kHz)
- Control Features: Enable
- Protection Features: Current Limit, Thermal Shutdown, UVLO
- Operating Temperature: -40°C ~ 85°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-XFBGA, WLCSP
- Supplier Device Package: 6-WCSP (1.2x0.80)
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paquet: 6-XFBGA, WLCSP |
Stock3 472 |
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Toshiba Semiconductor and Storage |
300MA LDO VOUT1.9V DROPOUT140MV
- Output Configuration: -
- Output Type: -
- Number of Regulators: -
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: -
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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paquet: - |
Stock5 056 |
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Toshiba Semiconductor and Storage |
UMOS9 SOP-ADV(N) PD=170W F=1MHZ
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 960mW (Ta), 170W (Tc)
- Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5.75)
- Package / Case: 8-PowerTDFN
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paquet: - |
Stock56 901 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 3.2A UFM
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
- Vgs (Max): +6V, -8V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: UFM
- Package / Case: 3-SMD, Flat Lead
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paquet: - |
Stock9 000 |
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Toshiba Semiconductor and Storage |
NPNX2 BRT Q1BSR10KOHM Q1BER10KOH
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10kOhms
- Resistor - Emitter Base (R2) (Ohms): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: USV
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paquet: - |
Stock17 967 |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR PS-
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 940mW (Ta)
- Rds On (Max) @ Id, Vgs: 51.2mOhm @ 2.5A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: PS-8
- Package / Case: 8-SMD, Flat Lead
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paquet: - |
Stock8 940 |
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Toshiba Semiconductor and Storage |
IC GATE NAND 1CH 2-INP ESV
- Logic Type: NAND Gate
- Number of Circuits: 1
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 1.65V ~ 5.5V
- Current - Quiescent (Max): 2 µA
- Current - Output High, Low: 32mA, 32mA
- Logic Level - Low: -
- Logic Level - High: -
- Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: ESV
- Package / Case: SOT-553
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paquet: - |
Stock10 632 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 50V 0.1A SMINI
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 4.7 kOhms
- Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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paquet: - |
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