Page 28 - Produits Toshiba Semiconductor and Storage | Heisener Electronics
Contactez nous
SalesDept@heisener.com +86-755-83210559 ext. 803
Connexion/S'inscrire
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Chariot 0

Produits Toshiba Semiconductor and Storage

Dossiers 4 549
Page  28/163
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
2SJ304(F)
Toshiba Semiconductor and Storage

MOSFET P-CH 60V 14A TO220NIS

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 7A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220NIS
  • Package / Case: TO-220-3 Full Pack
paquet: TO-220-3 Full Pack
Stock6 992
2SK3132(Q)
Toshiba Semiconductor and Storage

MOSFET N-CH 500V 50A TO-3P(L)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 10V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 95 mOhm @ 25A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P(L)
  • Package / Case: TO-3PL
paquet: TO-3PL
Stock6 496
hot 2SK2963(TE12L,F)
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 1A PW-MINI

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 500mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PW-MINI
  • Package / Case: TO-243AA
paquet: TO-243AA
Stock19 800
TK6Q60W,S1VQ
Toshiba Semiconductor and Storage

MOSFET N CH 600V 6.2A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 310µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 300V
  • Vgs (Max): ±30V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 820 mOhm @ 3.1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Stub Leads, IPak
paquet: TO-251-3 Stub Leads, IPak
Stock7 536
SSM3K72KCT,L3F
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 0.4A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: CST3
  • Package / Case: SC-101, SOT-883
paquet: SC-101, SOT-883
Stock6 176
RN1907FE,LF(CB
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
paquet: SOT-563, SOT-666
Stock74 826
1SV325,H3F
Toshiba Semiconductor and Storage

DIODE VARACTOR 10V ESC

  • Capacitance @ Vr, F: 12pF @ 4V, 1MHz
  • Capacitance Ratio: 4.3
  • Capacitance Ratio Condition: C1/C4
  • Voltage - Peak Reverse (Max): 10V
  • Diode Type: Single
  • Q @ Vr, F: -
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: ESC
paquet: SC-79, SOD-523
Stock32 868
TA78DS05CP,6KEHF(M
Toshiba Semiconductor and Storage

IC REG LINEAR 30MA LSTM

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: 1
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 30mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: LSTM
paquet: TO-226-3, TO-92-3 Long Body
Stock2 928
TA48S033AF(T6L1,Q)
Toshiba Semiconductor and Storage

IC REG LINEAR 3.3V 1A 5HSIP

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 16V
  • Voltage - Output (Min/Fixed): 3.3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.68V @ 1A (Typ)
  • Current - Output: 1A
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 1.7mA ~ 20mA
  • PSRR: 63dB (120Hz)
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-6, DPak (5 Leads + Tab)
  • Supplier Device Package: 5-HSIP
paquet: TO-252-6, DPak (5 Leads + Tab)
Stock4 720
hot TA78L10F(TE12L,F)
Toshiba Semiconductor and Storage

IC REG LINEAR 10V 150MA PW-MINI

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 35V
  • Voltage - Output (Min/Fixed): 10V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 150mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 6mA ~ 6.5mA
  • PSRR: 43dB (120Hz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -30°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PW-MINI (SOT-89)
paquet: TO-243AA
Stock126 120
TCR2EN10,LF
Toshiba Semiconductor and Storage

IC REG LINEAR 1V 200MA 4-SDFN

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 1V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 200mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 60µA
  • PSRR: 73dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFDFN Exposed Pad
  • Supplier Device Package: 4-SDFN (0.8x0.8)
paquet: 4-XFDFN Exposed Pad
Stock6 864
TCR3DM285,LF
Toshiba Semiconductor and Storage

IC REG LINEAR 2.85V 300MA 4DFN

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 2.85V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 300mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 65µA ~ 78µA
  • PSRR: 70dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-UDFN Exposed Pad
  • Supplier Device Package: 4-DFN (1x1)
paquet: 4-UDFN Exposed Pad
Stock102 696
hot TC58BYG0S3HBAI6
Toshiba Semiconductor and Storage

IC EEPROM 1GBIT 25NS 67VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 67-VFBGA
  • Supplier Device Package: 67-VFBGA (6.5x8)
paquet: 67-VFBGA
Stock49 404
TC7S86FUT5LFT
Toshiba Semiconductor and Storage

IC GATE XOR 1CH 2-INP USV

  • Logic Type: XOR (Exclusive OR)
  • Number of Circuits: 1
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 2 V ~ 6 V
  • Current - Quiescent (Max): 1µA
  • Current - Output High, Low: 2.6mA, 2.6mA
  • Logic Level - Low: 0.5 V ~ 1.8 V
  • Logic Level - High: 1.5 V ~ 4.2 V
  • Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: USV
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
paquet: 5-TSSOP, SC-70-5, SOT-353
Stock3 200
74LCX74FT(AJ)
Toshiba Semiconductor and Storage

IC FLIP FLOP DUAL D-TYPE 14TSSOP

  • Function: Set(Preset) and Reset
  • Type: D-Type
  • Output Type: Differential
  • Number of Elements: 2
  • Number of Bits per Element: 1
  • Clock Frequency: 150MHz
  • Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 50pF
  • Trigger Type: Positive Edge
  • Current - Output High, Low: 24mA, 24mA
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Current - Quiescent (Iq): 10µA
  • Input Capacitance: 7pF
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 14-TSSOP (0.173", 4.40mm Width)
paquet: 14-TSSOP (0.173", 4.40mm Width)
Stock6 864
TC74LCX244FK(EL,K)
Toshiba Semiconductor and Storage

IC BUFF/DVR DUAL LV 20VSSOP

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 2
  • Number of Bits per Element: 4
  • Input Type: -
  • Output Type: Push-Pull
  • Current - Output High, Low: 24mA, 24mA
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 20-VFSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 20-VSSOP
paquet: 20-VFSOP (0.118", 3.00mm Width)
Stock23 964
TLP3122(TP,F)
Toshiba Semiconductor and Storage

PHOTORELAY MOSFET OUT 1A 4-SOP

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 250 mOhm
  • Load Current: 1A
  • Voltage - Input: 1.15VDC
  • Voltage - Load: 0 ~ 60 V
  • Mounting Type: Surface Mount
  • Termination Style: Gull Wing
  • Package / Case: 4-SOP (0.173", 4.40mm)
  • Supplier Device Package: 4-SOP (2.54mm)
  • Relay Type: Relay
paquet: 4-SOP (0.173", 4.40mm)
Stock5 130
TLP291(GR-TP,SE
Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS 4-SO

  • Number of Channels: 1
  • Voltage - Isolation: 3750Vrms
  • Current Transfer Ratio (Min): 100% @ 5mA
  • Current Transfer Ratio (Max): 300% @ 5mA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.25V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 300mV
  • Operating Temperature: -55°C ~ 110°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-SOIC (0.179", 4.55mm)
  • Supplier Device Package: 4-SO
paquet: 4-SOIC (0.179", 4.55mm)
Stock4 590
TLP2309(TPL,E)
Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 5 LEAD

  • Number of Channels: 1
  • Voltage - Isolation: 3750Vrms
  • Current Transfer Ratio (Min): 15% @ 16mA
  • Current Transfer Ratio (Max): -
  • Turn On / Turn Off Time (Typ): 1µs, 1µs (Max)
  • Rise / Fall Time (Typ): -
  • Input Type: DC
  • Output Type: Transistor
  • Voltage - Output (Max): 20V
  • Current - Output / Channel: 8mA
  • Voltage - Forward (Vf) (Typ): 1.55V
  • Current - DC Forward (If) (Max): 25mA
  • Vce Saturation (Max): -
  • Operating Temperature: -40°C ~ 110°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
  • Supplier Device Package: 6-SO, 5 Lead
paquet: 6-SOIC (0.179", 4.55mm Width) 5 Leads
Stock23 622
TLP108(F)
Toshiba Semiconductor and Storage

OPTOISO 3.75KV PSH PULL 6MFSOP-5

  • Number of Channels: 1
  • Inputs - Side 1/Side 2: 1/0
  • Voltage - Isolation: 3750Vrms
  • Common Mode Transient Immunity (Min): 10kV/µs
  • Input Type: DC
  • Output Type: Push-Pull, Totem Pole
  • Current - Output / Channel: 25mA
  • Data Rate: 5Mbps
  • Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
  • Rise / Fall Time (Typ): 30ns, 30ns
  • Voltage - Forward (Vf) (Typ): 1.57V
  • Current - DC Forward (If) (Max): 20mA
  • Voltage - Supply: 4.5 V ~ 20 V
  • Operating Temperature: -40°C ~ 100°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SOIC (0.173", 4.40mm Width) 5 Leads
  • Supplier Device Package: 6-MFSOP, 5 Lead
paquet: 6-SOIC (0.173", 4.40mm Width) 5 Leads
Stock22 326
74LCX245FT
Toshiba Semiconductor and Storage

IC TXRX NON-INVERT 3.6V 20TSSOP

  • Logic Type: Transceiver, Non-Inverting
  • Number of Elements: 1
  • Number of Bits per Element: 8
  • Input Type: -
  • Output Type: 3-State
  • Current - Output High, Low: 24mA, 24mA
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 20-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 20-TSSOP
paquet: 20-TSSOP (0.173", 4.40mm Width)
Stock6 336
TCR3UF30A-LM-CT
Toshiba Semiconductor and Storage

IC REG LINEAR 3V 300MA SMV

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.287V @ 300mA
  • Current - Output: 300mA
  • Current - Quiescent (Iq): 680 nA
  • Current - Supply (Max): -
  • PSRR: 70dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
paquet: -
Stock23 355
TW060Z120C-S1F
Toshiba Semiconductor and Storage

G3 1200V SIC-MOSFET TO-247-4L 6

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5V @ 4.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 800 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 82mOhm @ 18A, 18V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L(X)
  • Package / Case: TO-247-4
paquet: -
Stock354
TJ40S04M3L-LXHQ
Toshiba Semiconductor and Storage

MOSFET P-CH 40V 40A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 10 V
  • Vgs (Max): +10V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Stock12 039
RN1408-LF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SMINI

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 22 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250 MHz
  • Power - Max: 200 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
paquet: -
Stock8 850
TK3R2A10PL-S4X
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 54W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
paquet: -
Stock132
TC62D748CFG-EL
Toshiba Semiconductor and Storage

16-CH CONSTANT CURRENT LED DRIVE

  • Type: Linear
  • Topology: Shift Register
  • Internal Switch(s): No
  • Number of Outputs: 16
  • Voltage - Supply (Min): 3V
  • Voltage - Supply (Max): 5.5V
  • Voltage - Output: 17V
  • Current - Output / Channel: 90mA
  • Frequency: -
  • Dimming: No
  • Applications: LED Lighting
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-SOP (0.236", 6.00mm Width)
  • Supplier Device Package: 24-SSOP
paquet: -
Stock4 302
TDTC143Z-LM
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SOT23-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 4.7 kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250 MHz
  • Power - Max: 320 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
paquet: -
Stock9 000