Produits Taiwan Semiconductor Corporation

BZD27C7V5P MTG

Taiwan Semiconductor Corporation

DIODE, ZENER, 7.5V, 1000MW, %, S

• Voltage - Zener (Nom) (Vz): 7.45V
• Tolerance: ±6.04%
• Power - Max: 1W
• Impedance (Max) (Zzt): 2 Ohms
• Current - Reverse Leakage @ Vr: 50µA @ 3V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

paquet: DO-219AB

1N4752AHA0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 33V, 1000MW, 5%, A

• Voltage - Zener (Nom) (Vz): 33V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 45 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 25.1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

paquet: DO-204AL, DO-41, Axial

1SMB5933HM4G

Taiwan Semiconductor Corporation

DIODE, ZENER, 22V, 3000MW, 5%, A

• Voltage - Zener (Nom) (Vz): 22V
• Tolerance: ±5%
• Power - Max: 3W
• Impedance (Max) (Zzt): 17.5 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 16.7V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

paquet: DO-214AA, SMB

BZD17C24P RFG

Taiwan Semiconductor Corporation

DIODE, ZENER, 24V, 800MW, %, SUB

• Voltage - Zener (Nom) (Vz): 24V
• Tolerance: ±5.83%
• Power - Max: 800mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 18V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

paquet: DO-219AB

BZT52C27-G RHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 27V, 350MW, 5%, SO

• Voltage - Zener (Nom) (Vz): 27V
• Tolerance: ±5%
• Power - Max: 350mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 18.9V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

paquet: SOD-123

BZS55B4V3 RXG

Taiwan Semiconductor Corporation

DIODE, ZENER, 4.3V, 500MW, 2%, 1

• Voltage - Zener (Nom) (Vz): 4.3V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206

paquet: 1206 (3216 Metric)

BZT55B3V0 L1G

Taiwan Semiconductor Corporation

DIODE, ZENER, 3V, 500MW, 2%, QMM

• Voltage - Zener (Nom) (Vz): 3V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 85 Ohms
• Current - Reverse Leakage @ Vr: 4µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-80 Variant
• Supplier Device Package: Mini MELF

paquet: SOD-80 Variant

BZV55C20 L0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 20V, 500MW, 5%, MM

• Voltage - Zener (Nom) (Vz): 20V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 55 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 15V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: Mini MELF

paquet: DO-213AC, MINI-MELF, SOD-80

TSS4B02GHC2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, SUPER FAST, 4A

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 100V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 980mV @ 4A
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS-4B
• Supplier Device Package: TS4B

paquet: 4-SIP, TS-4B

DBLS106GHRDG

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Current - Reverse Leakage @ Vr: 2µA @ 800V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: DBLS

paquet: 4-SMD, Gull Wing

TSCR421CX6 RFG

Taiwan Semiconductor Corporation

LED DRIVER

• Type: Linear
• Topology: -
• Internal Switch(s): Yes
• Number of Outputs: 1
• Voltage - Supply (Min): -
• Voltage - Supply (Max): 4.5V
• Voltage - Output: 40V
• Current - Output / Channel: 11mA
• Frequency: -
• Dimming: PWM
• Applications: Automotive, Lighting
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Supplier Device Package: SOT-26

paquet: SOT-23-6

1SMB5949H

Taiwan Semiconductor Corporation

DIODE ZENER 100V 3W DO214AA

• Voltage - Zener (Nom) (Vz): 100 V
• Tolerance: ±5%
• Power - Max: 3 W
• Impedance (Max) (Zzt): 250 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 76 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

paquet: -

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TSM200N03DPQ33

Taiwan Semiconductor Corporation

MOSFET 2N-CH 30V 20A 8DFN

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V
• Power - Max: 20W (Tc)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerWDFN
• Supplier Device Package: 8-PDFN (3x3)

paquet: -

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RS1GH

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1A DO214AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

BZX79B24

Taiwan Semiconductor Corporation

DO-35, 500MW, 2%, SMALL SIGNAL Z

• Voltage - Zener (Nom) (Vz): 24 V
• Tolerance: ±2%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 70 Ohms
• Current - Reverse Leakage @ Vr: 0.05 µA @ 16.8 V
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

paquet: -

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S1GLR2G

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1A SUB SMA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.8 µs
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Capacitance @ Vr, F: 9pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA
• Operating Temperature - Junction: -55°C ~ 175°C

paquet: -

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SS520FSH

Taiwan Semiconductor Corporation

5A, 200V, SCHOTTKY RECTIFIER

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 200 V
• Capacitance @ Vr, F: 100pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: SOD-128
• Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

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MBR16100H

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 100V 16A TO220AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 16A
• Voltage - Forward (Vf) (Max) @ If: 850 mV @ 16 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 300 µA @ 100 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

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SF66G

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 6A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

SFF1004G

Taiwan Semiconductor Corporation

DIODE ARRAY GP 200V 10A ITO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io) (per Diode): 10A (DC)
• Voltage - Forward (Vf) (Max) @ If: 975 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 200 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB

paquet: -

TS2596CM533

Taiwan Semiconductor Corporation

IC REG BUCK 3.3V 3A TO263-5

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Fixed
• Number of Outputs: 1
• Voltage - Input (Min): 4.5V
• Voltage - Input (Max): 40V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Current - Output: 3A
• Frequency - Switching: 150kHz
• Synchronous Rectifier: No
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
• Supplier Device Package: TO-263-5

paquet: -

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TSD30H150CW

Taiwan Semiconductor Corporation

DIODE ARRAY SCHOT 30A TO263AB

• Diode Configuration: -
• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io) (per Diode): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Operating Temperature - Junction: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)

paquet: -

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1PGSMA4753H

Taiwan Semiconductor Corporation

DIODE ZENER 36V 1.25W DO214AC

• Voltage - Zener (Nom) (Vz): 36 V
• Tolerance: ±5%
• Power - Max: 1.25 W
• Impedance (Max) (Zzt): 50 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 27.4 V
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

paquet: -

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BZT52C51

Taiwan Semiconductor Corporation

SOD-123F, 500MW, 5%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 51 V
• Tolerance: ±5%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 180 Ohms
• Current - Reverse Leakage @ Vr: 45 nA @ 35.7 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

paquet: -

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KBU407G

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 4A KBU

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1 kV
• Current - Average Rectified (Io): 4 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
• Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, KBU
• Supplier Device Package: KBU

paquet: -

SR10150

Taiwan Semiconductor Corporation

DIODE ARR SCHOT 150V 10A TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150 V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 150 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

paquet: -

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SFF10L05G

Taiwan Semiconductor Corporation

DIODE ARRAY GP 300V 5A ITO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300 V
• Current - Average Rectified (Io) (per Diode): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 300 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB

paquet: -

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1PGSMA4740HR3G

Taiwan Semiconductor Corporation

DIODE ZENER 10V 1.25W DO214AC

• Voltage - Zener (Nom) (Vz): 10 V
• Tolerance: ±5%
• Power - Max: 1.25 W
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 5 µA @ 7.6 V
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

paquet: -