Page 96 - Produits Taiwan Semiconductor Corporation

Référence	Fabricant	Description	paquet	Stock
1N4743AHB0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 13V, 1000MW, 5%, A Voltage - Zener (Nom) (Vz): 13V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 5µA @ 35.8V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	paquet: DO-204AL, DO-41, Axial	Stock2 100
BZD17C220P RFG	Taiwan Semiconductor Corporation	DIODE, ZENER, 220V, 800MW, %, SU Voltage - Zener (Nom) (Vz): 220V Tolerance: ±5.68% Power - Max: 800mW Impedance (Max) (Zzt): 900 Ohms Current - Reverse Leakage @ Vr: 1µA @ 160V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	paquet: DO-219AB	Stock7 856
BZD27C100PHRTG	Taiwan Semiconductor Corporation	DIODE, ZENER, 100V, 1000MW, %, A Voltage - Zener (Nom) (Vz): 100V Tolerance: ±6% Power - Max: 1W Impedance (Max) (Zzt): 200 Ohms Current - Reverse Leakage @ Vr: 1µA @ 75V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	paquet: DO-219AB	Stock7 712
BZD27C16PHMQG	Taiwan Semiconductor Corporation	DIODE, ZENER, 16V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 16.2V Tolerance: ±5.55% Power - Max: 1W Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 12V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	paquet: DO-219AB	Stock5 456
1N4742AHR1G	Taiwan Semiconductor Corporation	DIODE, ZENER, 12V, 1000MW, 5%, A Voltage - Zener (Nom) (Vz): 12V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 45 Ohms Current - Reverse Leakage @ Vr: 5µA @ 25.1V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	paquet: DO-204AL, DO-41, Axial	Stock5 328
BZD17C18P RTG	Taiwan Semiconductor Corporation	DIODE, ZENER, 18V, 800MW, %, SUB Voltage - Zener (Nom) (Vz): 18V Tolerance: ±6.38% Power - Max: 800mW Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 13V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	paquet: DO-219AB	Stock3 072
1SMA4743HM2G	Taiwan Semiconductor Corporation	DIODE, ZENER, 13V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 13V Tolerance: ±5% Power - Max: 1.25W Impedance (Max) (Zzt): 10 Ohms Current - Reverse Leakage @ Vr: 1µA @ 9.9V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	paquet: DO-214AC, SMA	Stock3 824
BZD17C36P RHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 36V, 800MW, %, SUB Voltage - Zener (Nom) (Vz): 36V Tolerance: ±5.55% Power - Max: 800mW Impedance (Max) (Zzt): 40 Ohms Current - Reverse Leakage @ Vr: 1µA @ 27V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	paquet: DO-219AB	Stock3 424
1N5250B A0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 20V, 500MW, 5%, DO Voltage - Zener (Nom) (Vz): 20V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 25 Ohms Current - Reverse Leakage @ Vr: 100nA @ 15V Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA Operating Temperature: 100°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35	paquet: DO-204AH, DO-35, Axial	Stock3 344
GBPC1510 T0G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 15A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A Current - Reverse Leakage @ Vr: 5µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, GBPC Supplier Device Package: GBPC	paquet: 4-Square, GBPC	Stock6 560
TS10P07GHD2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 10A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A Current - Reverse Leakage @ Vr: 10µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	paquet: 4-SIP, TS-6P	Stock4 400
DBLS101G RDG	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 1A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Current - Reverse Leakage @ Vr: 2µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: DBLS	paquet: 4-SMD, Gull Wing	Stock5 424
BZD17C47PH	Taiwan Semiconductor Corporation	SUB SMA, 800MW, 6%, ZENER DIODE Voltage - Zener (Nom) (Vz): 47 V Tolerance: ±5% Power - Max: 1 W Impedance (Max) (Zzt): 45 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 36 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: Sub SMA	paquet: -	Request a Quote
S5GBH	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 5A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock17 994
BZX55C68	Taiwan Semiconductor Corporation	DO-35, 500MW, 5%, SMALL SIGNAL Z Voltage - Zener (Nom) (Vz): 68 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): 160 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 51 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35	paquet: -	Request a Quote
TSF30H120C	Taiwan Semiconductor Corporation	DIODE ARR SCHOTT 120V ITO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120 V Current - Average Rectified (Io) (per Diode): 15A Voltage - Forward (Vf) (Max) @ If: 880 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 µA @ 120 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB	paquet: -	Request a Quote
S15KLWH	Taiwan Semiconductor Corporation	1.5A, 800V, STANDARD RECOVERY RE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 800 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 175°C	paquet: -	Stock60 000
TUAU6KH	Taiwan Semiconductor Corporation	75NS, 6A, 800V, HIGH EFFICIENT R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 64pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: SMPC4.6U Operating Temperature - Junction: -55°C ~ 175°C	paquet: -	Stock17 967
BZY55B5V6	Taiwan Semiconductor Corporation	0805 (CERAMICS), 500MW, 2%, SMAL Voltage - Zener (Nom) (Vz): 5.6 V Tolerance: ±2% Power - Max: 500 mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805	paquet: -	Request a Quote
HERF1008GAH	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 10A ITO220AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock2 481
BZT55C4V7	Taiwan Semiconductor Corporation	QMMELF, 500MW, 5%, SMALL SIGNAL Voltage - Zener (Nom) (Vz): 4.7 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): 60 Ohms Current - Reverse Leakage @ Vr: 500 nA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-80 Variant Supplier Device Package: QMMELF	paquet: -	Request a Quote
M3Z6V2C	Taiwan Semiconductor Corporation	SOD-323F, 200MW, 5%, ZENER DIODE Voltage - Zener (Nom) (Vz): 6.2 V Tolerance: ±5% Power - Max: 200 mW Impedance (Max) (Zzt): 10 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 3 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	paquet: -	Request a Quote
TSM10NC60CF	Taiwan Semiconductor Corporation	600V, 10A, SINGLE N-CHANNEL POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1652 pF @ 50 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220S Package / Case: TO-220-3 Full Pack	paquet: -	Request a Quote
SFF10L05GA	Taiwan Semiconductor Corporation	DIODE ARRAY GP 300V 5A ITO220AB Diode Configuration: 1 Pair Common Anode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io) (per Diode): 5A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 300 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB	paquet: -	Stock3 000
SF3006PT	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 30A TO247AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 175pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (TO-3P) Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock2 700
SR115	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A DO204AL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Request a Quote
BZX584B30-RSG	Taiwan Semiconductor Corporation	SOD-523F, 150MW, 2%, SMALL SIGNA Voltage - Zener (Nom) (Vz): 30 V Tolerance: ±2% Power - Max: 150 mW Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 21 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523F	paquet: -	Stock24 000
BZT52C16S-R9G	Taiwan Semiconductor Corporation	SOD-323F, 200MW, 5%, SMALL SIGNA Voltage - Zener (Nom) (Vz): 16 V Tolerance: ±5% Power - Max: 200 mW Impedance (Max) (Zzt): 40 Ohms Current - Reverse Leakage @ Vr: 45 nA @ 11.2 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	paquet: -	Stock30 000