Image |
Référence |
Fabricant |
Description |
paquet |
Stock |
Quantité |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 650V 7.3A TO-262
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paquet: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock2 672 |
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MOSFET (Metal Oxide) | 650V | 7.3A (Tc) | 10V | 3.9V @ 350µA | 27nC @ 10V | 790pF @ 25V | ±20V | - | 83W (Tc) | 600 mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Renesas Electronics America |
MOSFET N-CH 55V 88A TO-263
|
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3 328 |
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MOSFET (Metal Oxide) | 55V | 88A (Tc) | 10V | 4V @ 250µA | 250nC @ 10V | 14400pF @ 25V | ±20V | - | 1.8W (Ta), 200W (Tc) | 3.9 mOhm @ 44A, 10V | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Fairchild/ON Semiconductor |
MOSFET N-CH 100V 33A TO-220AB
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paquet: TO-220-3 |
Stock399 588 |
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MOSFET (Metal Oxide) | 100V | 33A (Tc) | 10V | 4V @ 250µA | 79nC @ 20V | 1220pF @ 25V | ±20V | - | 120W (Tc) | 40 mOhm @ 33A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET P-CH 250V 4A TO-220
|
paquet: TO-220-3 |
Stock133 164 |
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MOSFET (Metal Oxide) | 250V | 4A (Tc) | 10V | 5V @ 250µA | 14nC @ 10V | 420pF @ 25V | ±30V | - | 75W (Tc) | 2.1 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 30A TO-262
|
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock3 488 |
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MOSFET (Metal Oxide) | 60V | 30A (Tc) | 4V, 5V | 2V @ 250µA | 35nC @ 5V | 1600pF @ 25V | ±10V | - | 3.7W (Ta), 88W (Tc) | 50 mOhm @ 18A, 5V | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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NXP |
MOSFET N-CH 20V 3.76A SOT23
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paquet: TO-236-3, SC-59, SOT-23-3 |
Stock142 800 |
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MOSFET (Metal Oxide) | 20V | 3.76A (Tc) | 2.5V, 4.5V | 650mV @ 1mA | 5.4nC @ 4.5V | 230pF @ 10V | ±8V | - | 1.92W (Tc) | 85 mOhm @ 3.6A, 4.5V | -65°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 650V TO247-4
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paquet: TO-247-4 |
Stock2 656 |
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MOSFET (Metal Oxide) | 650V | 75A (Tc) | 10V | 4V @ 2.92mA | 215nC @ 10V | 9900pF @ 400V | ±20V | - | 446W (Tc) | 19 mOhm @ 58.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
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IXYS |
MOSFET N-CH 500V 32A TO-268
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paquet: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock5 088 |
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MOSFET (Metal Oxide) | 500V | 32A (Tc) | 10V | 4V @ 4mA | 300nC @ 10V | 5700pF @ 25V | ±20V | - | 360W (Tc) | 150 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 200V 86A TO-263
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock103 464 |
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MOSFET (Metal Oxide) | 200V | 86A (Tc) | 10V | 5V @ 1mA | 90nC @ 10V | 4500pF @ 25V | ±30V | - | 480W (Tc) | 29 mOhm @ 500mA, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 250V 44A TO-220
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paquet: TO-220-3 |
Stock2 768 |
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MOSFET (Metal Oxide) | 250V | 44A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-220AB | TO-220-3 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 17.5A 8DFN
|
paquet: 8-PowerSMD, Flat Leads |
Stock2 480 |
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MOSFET (Metal Oxide) | 60V | 17.5A (Ta), 53A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 28nC @ 10V | 1543pF @ 30V | ±20V | - | 7.4W (Ta), 69.5W (Tc) | 11.5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 9.5A DPAK-3
|
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5 488 |
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MOSFET (Metal Oxide) | 60V | 9.5A (Ta), 50A (Tc) | 5V, 10V | 3V @ 250µA | 32nC @ 5V | 2810pF @ 25V | ±20V | - | 125W (Tc) | 11.6 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 600V 5A DPAK
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paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock937 692 |
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MOSFET (Metal Oxide) | 600V | 5A (Tc) | 10V | 5V @ 250µA | 18nC @ 10V | 400pF @ 25V | ±30V | - | 96W (Tc) | 1 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
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paquet: 8-PowerVDFN |
Stock41 244 |
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MOSFET (Metal Oxide) | 30V | 150A | 4.5V, 10V | 2.1V @ 500µA | 80nC @ 10V | 7540pF @ 15V | ±20V | - | 132W (Tc) | - | 175°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 900V 2.1A TO-220
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paquet: TO-220-3 |
Stock322 908 |
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MOSFET (Metal Oxide) | 900V | 2.1A (Tc) | 10V | 4.5V @ 50µA | 27nC @ 10V | 485pF @ 25V | ±30V | - | 70W (Tc) | 6.5 Ohm @ 1.05A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 25A DPAK
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paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock849 996 |
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MOSFET (Metal Oxide) | 55V | 25A (Tc) | 5V, 10V | 3V @ 250µA | 20nC @ 5V | 710pF @ 25V | ±16V | - | 57W (Tc) | 37 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Panjit International Inc. |
40V N-CHANNEL ENHANCEMENT MODE M
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paquet: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 14A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 25 nC @ 4.5 V | 1258 pF @ 25 V | ±20V | - | 2.1W (Ta) | 5.5mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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onsemi |
FDS4P-CHANN1.SPECIFIPOWERTRENMOS
|
paquet: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Micro Commercial Co |
Interface
|
paquet: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 14A | 2.5V, 4.5V | 1V @ 250µA | 47.6 nC @ 4.5 V | 4500 pF @ 10 V | ±10V | - | 3.1W | 8.5mOhm @ 13.5A, 4.5V | -55°C ~ 150°C | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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IXYS |
MOSFET ULTRA JCT 600V 36A TO247
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paquet: - |
Stock651 |
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MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 5V @ 2.5mA | 29 nC @ 10 V | 2030 pF @ 25 V | ±20V | - | 446W (Tc) | 90mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Micro Commercial Co |
P-CHANNEL MOSFET,TO-220AB(H)
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paquet: - |
Stock16 671 |
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MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 6V, 10V | 3.5V @ 250µA | 88 nC @ 10 V | 5810 pF @ 30 V | ±18V | - | 89W | 8.4mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB (H) | TO-220-3 |
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Diotec Semiconductor |
IC
|
paquet: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 80 V | 65A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 35 nC @ 10 V | 1812 pF @ 30 V | ±20V | - | 62.5W (Tc) | 7mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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STMicroelectronics |
N-CHANNEL 650 V, 19.9 MOHM TYP.,
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paquet: - |
Stock192 |
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MOSFET (Metal Oxide) | 650 V | 95A (Tc) | 10V | 4.2V @ 250µA | 230 nC @ 10 V | 8844 pF @ 400 V | ±30V | - | 463W (Tc) | 23mOhm @ 48A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
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Microchip Technology |
MOSFET N-CH 800V 13A TO247
|
paquet: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 800 V | 13A (Tc) | - | 4V @ 1mA | 225 nC @ 10 V | 3700 pF @ 25 V | - | - | - | 650mOhm @ 500mA, 10V | - | Through Hole | TO-247 [B] | TO-247-3 |
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Goford Semiconductor |
MOSFET N-CH 30V 28A DFN3*3-8L
|
paquet: - |
Stock15 000 |
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MOSFET (Metal Oxide) | 30 V | 28A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 18 nC @ 10 V | 1077 pF @ 15 V | ±20V | - | 20W (Tc) | 10mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3.15x3.05) | 8-PowerVDFN |
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Rohm Semiconductor |
MOSFET N-CH 250V 33A LPTS
|
paquet: - |
Stock243 |
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MOSFET (Metal Oxide) | 250 V | 33A (Tc) | 10V | 5V @ 1mA | 80 nC @ 10 V | 4500 pF @ 25 V | ±30V | - | 211W (Tc) | 105mOhm @ 16.5A, 10V | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
N-CHANNEL 600V
|
paquet: - |
Stock2 991 |
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MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 5V @ 250µA | 75 nC @ 10 V | 2274 pF @ 100 V | ±30V | - | 39W (Tc) | 146mOhm @ 12.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
SICFET N-CH 1.2KV 52A TO247-3
|
paquet: - |
Stock174 |
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SiCFET (Silicon Carbide) | 1200 V | 52A (Tc) | 15V | 5.7V @ 10mA | 52 nC @ 15 V | 1900 pF @ 800 V | +20V, -10V | - | 228W (Tc) | 59mOhm @ 20A, 15V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |