Page 128 - Transistors - FET, MOSFET - Matrices | Produits à semiconducteurs discrets | Heisener Electronics
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Transistors - FET, MOSFET - Matrices

Dossiers 5 684
Page  128/203
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot VQ1006P
Vishay Siliconix

MOSFET 4N-CH 90V 0.4A 14DIP

  • FET Type: 4 N-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 90V
  • Current - Continuous Drain (Id) @ 25°C: 400mA
  • Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: -
  • Supplier Device Package: 14-DIP
paquet: -
Stock6 168
Logic Level Gate
90V
400mA
4.5 Ohm @ 1A, 10V
2.5V @ 1mA
-
60pF @ 25V
2W
-55°C ~ 150°C (TJ)
Through Hole
-
14-DIP
BSS84DW-7
Diodes Incorporated

MOSFET 2P-CH 50V 0.13A SC70-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 130mA
  • Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
paquet: 6-TSSOP, SC-88, SOT-363
Stock5 904
Logic Level Gate
50V
130mA
10 Ohm @ 100mA, 5V
2V @ 1mA
-
45pF @ 25V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
DMPH6050SSDQ-13
Diodes Incorporated

MOSFET BVDSS: 41V 60V SO-8

  • FET Type: 2 P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
  • Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock4 576
Standard
-
5.2A (Ta)
48 mOhm @ 5A, 10V
3V @ 250µA
14.5nC @ 4.5V
1525pF @ 30V
-
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
VEC2415-TL-W
ON Semiconductor

MOSFET 2N-CH 60V 3A VEC8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: SOT-28FL/VEC8
paquet: 8-SMD, Flat Lead
Stock4 336
Logic Level Gate, 4V Drive
60V
3A
80 mOhm @ 1.5A, 10V
2.6V @ 1mA
10nC @ 10V
505pF @ 20V
1W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
SOT-28FL/VEC8
hot MCH6662-TL-H
ON Semiconductor

MOSFET 2N-CH 20V 2A MCPH6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2A
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 128pF @ 10V
  • Power - Max: 800mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: 6-MCPH
paquet: 6-SMD, Flat Leads
Stock72 000
Logic Level Gate
20V
2A
160 mOhm @ 1A, 4.5V
-
1.8nC @ 4.5V
128pF @ 10V
800mW
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
6-MCPH
CPH6636R-TL-W
ON Semiconductor

MOSFET 2N-CH 24V 6A CPH6

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 900mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-CPH
paquet: SOT-23-6 Thin, TSOT-23-6
Stock5 904
Logic Level Gate, 2.5V Drive
24V
6A
20 mOhm @ 3A, 4.5V
-
3nC @ 4.5V
-
900mW
150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-CPH
BUK9K45-100E,115
Nexperia USA Inc.

MOSFET 2N-CH 100V 21A LFPAK56D

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 21A
  • Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V
  • Power - Max: 53W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
paquet: SOT-1205, 8-LFPAK56
Stock6 240
Logic Level Gate
100V
21A
42 mOhm @ 5A, 10V
2.1V @ 1mA
33.5nC @ 10V
2152pF @ 25V
53W
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
UT6JA2TCR
Rohm Semiconductor

-30V PCH+PCH MIDDLE POWER MOSFET

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: HUML2020L8
paquet: 6-UDFN Exposed Pad
Stock2 000
-
30V
4A
70 mOhm @ 4A, 10V
2.5V @ 1mA
6.7nC @ 10V
305pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
HUML2020L8
hot IRF7341PBF
Infineon Technologies

MOSFET 2N-CH 55V 4.7A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock7 668
Logic Level Gate
55V
4.7A
50 mOhm @ 4.7A, 10V
1V @ 250µA
36nC @ 10V
740pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot ZXMHC6A07N8TC
Diodes Incorporated

MOSFET 2N/2P-CH 60V 8-SOIC

  • FET Type: 2 N and 2 P-Channel (H-Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 1.39A, 1.28A
  • Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V
  • Power - Max: 870mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock63 600
Logic Level Gate
60V
1.39A, 1.28A
250 mOhm @ 1.8A, 10V
3V @ 250µA
3.2nC @ 10V
166pF @ 40V
870mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot SI4599DY-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 40V 6.8A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 6.8A, 5.8A
  • Rds On (Max) @ Id, Vgs: 35.5 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
  • Power - Max: 3W, 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock498 456
Logic Level Gate
40V
6.8A, 5.8A
35.5 mOhm @ 5A, 10V
3V @ 250µA
20nC @ 10V
640pF @ 20V
3W, 3.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
IRFR420U
Harris Corporation

MOSFET N-CH 500V 2.5A

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
IRFNL210BTA
Fairchild Semiconductor

MOSFET N-CH 200V

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
DMC67D8UFDBQ-13
Diodes Incorporated

MOSFET N/P-CH 60V 0.39A 6UDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 390mA (Ta), 2.9A (Ta)
  • Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V, 72mOhm @ 3.5A, 4.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA, 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.4pC @ 4.5V, 7.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V, 443pF @ 16V
  • Power - Max: 580mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
paquet: -
Request a Quote
-
60V, 20V
390mA (Ta), 2.9A (Ta)
4Ohm @ 500mA, 10V, 72mOhm @ 3.5A, 4.5V
2.5V @ 250µA, 1.25V @ 250µA
0.4pC @ 4.5V, 7.3nC @ 4.5V
41pF @ 25V, 443pF @ 16V
580mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
SH32N65DM6AG
STMicroelectronics

MOSFET 2N-CH 650V 32A 9ACEPACK

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Rds On (Max) @ Id, Vgs: 97mOhm @ 23A, 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2211pF @ 100V
  • Power - Max: 208W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 9-PowerSMD
  • Supplier Device Package: 9-ACEPACK SMIT
paquet: -
Stock702
-
650V
32A (Tc)
97mOhm @ 23A, 10V
4.75V @ 250µA
47nC @ 10V
2211pF @ 100V
208W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
9-PowerSMD
9-ACEPACK SMIT
AONY36306
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 17.5A/32A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)
  • Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, 3.8mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 42nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 1930pF @ 15V
  • Power - Max: 2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-DFN (5x6)
paquet: -
Request a Quote
-
30V
17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)
6mOhm @ 20A, 10V, 3.8mOhm @ 20A, 10V
2.2V @ 250µA, 1.9V @ 250µA
30nC @ 10V, 42nC @ 10V
1000pF @ 15V, 1930pF @ 15V
2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
8-DFN (5x6)
SI4534DY-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 60V 6.2A/8A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 8A (Tc), 3A (Ta), 4.1A (Tc)
  • Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V, 120mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V, 650pF @ 30V
  • Power - Max: 2W (Ta), 3.6W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
paquet: -
Stock30 075
-
60V
6.2A (Ta), 8A (Tc), 3A (Ta), 4.1A (Tc)
29mOhm @ 5A, 10V, 120mOhm @ 3.1A, 10V
3V @ 250µA
11nC @ 10V, 22nC @ 10V
420pF @ 30V, 650pF @ 30V
2W (Ta), 3.6W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
VEC2415-TL-W-Z
onsemi

MOSFET 2N-CH 60V 3A SOT28

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
  • Power - Max: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: SOT-28FL/VEC8
paquet: -
Request a Quote
-
60V
3A (Ta)
80mOhm @ 1.5A, 10V
2.6V @ 1mA
10nC @ 10V
505pF @ 20V
-
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
SOT-28FL/VEC8
SQJB40EP-T1_BE3
Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
  • Power - Max: 34W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8
  • Supplier Device Package: PowerPAK® SO-8
paquet: -
Stock27 000
-
40V
30A (Tc)
8mOhm @ 8A, 10V
2.5V @ 250µA
35nC @ 10V
1900pF @ 25V
34W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
MSCSM120AM50CT1AG
Microchip Technology

SIC 2N-CH 1200V 55A SP1F

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.7V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
  • Power - Max: 245W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP1F
paquet: -
Request a Quote
-
1200V (1.2kV)
55A (Tc)
50mOhm @ 40A, 20V
2.7V @ 1mA
137nC @ 20V
1990pF @ 1000V
245W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP1F
DMN3061SVTQ-7
Diodes Incorporated

MOSFET 2N-CH 30V 3.4A TSOT26

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V
  • Power - Max: 880mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
paquet: -
Stock8 358
-
30V
3.4A (Ta)
60mOhm @ 3.1A, 10V
1.8V @ 250µA
6.6nC @ 10V
278pF @ 15V
880mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
XP3832CMT
YAGEO XSEMI

FET 2N-CH 30V 16A 55A 27A 85A

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55A (Tc), 27A (Ta), 85A (Tc)
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V, 1.9mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1712pF @ 15V, 3920pF @ 15V
  • Power - Max: 2.08W (Ta), 2.27W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerLDFN
  • Supplier Device Package: PMPAK® 5 x 6
paquet: -
Stock3 000
-
30V
16A (Ta), 55A (Tc), 27A (Ta), 85A (Tc)
5mOhm @ 16A, 10V, 1.9mOhm @ 20A, 10V
2.2V @ 250µA
30.4nC @ 10V
1712pF @ 15V, 3920pF @ 15V
2.08W (Ta), 2.27W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerLDFN
PMPAK® 5 x 6
RF1S30N06LE
Harris Corporation

MOSFET N-CH 60V 30A

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
DMP2110UVTQ-13
Diodes Incorporated

MOSFET 2P-CH 20V 1.8A TSOT26

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 6V
  • Power - Max: 740mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
paquet: -
Request a Quote
-
20V
1.8A (Ta)
150mOhm @ 2.8A, 4.5V
1V @ 250µA
6nC @ 4.5V
443pF @ 6V
740mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
MSCSM120AM13CT6AG
Microchip Technology

SIC MOSFET

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
XP3700YT
YAGEO XSEMI

MOSFET N AND P-CH 30V 8.7A 6.1A

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 6.1A (Tc)
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 15V
  • Power - Max: 2.5W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerDFN
  • Supplier Device Package: PMPAK® 3 x 3
paquet: -
Stock2 985
-
30V
8.7A (Ta), 6.1A (Tc)
20mOhm @ 8A, 10V
2.5V @ 1mA
8nC @ 4.5V
880pF @ 15V
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerDFN
PMPAK® 3 x 3
SP8K24FRATB
Rohm Semiconductor

MOSFET 2N-CH 45V 6A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 45V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
paquet: -
Stock3
-
45V
6A (Ta)
25mOhm @ 6A, 10V
2.5V @ 1mA
21.6nC @ 5V
1400pF @ 10V
2W
150°C
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
NTTFD018N08LC
onsemi

MOSFET 2N-CH 80V 6A/26A 12WQFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 26A (Tc)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 7.8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 44µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 856pF @ 40V
  • Power - Max: 1.7W (Ta), 26W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-PowerWQFN
  • Supplier Device Package: 12-WQFN (3.3x3.3)
paquet: -
Stock8 970
-
80V
6A (Ta), 26A (Tc)
18mOhm @ 7.8A, 10V
2.5V @ 44µA
12.4nC @ 10V
856pF @ 40V
1.7W (Ta), 26W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
12-PowerWQFN
12-WQFN (3.3x3.3)