Page 126 - Transistors - FET, MOSFET - Matrices | Produits à semiconducteurs discrets

Référence	Fabricant	Description	paquet	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AON5820_101	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 10A 6DFN FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 10A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 10V Power - Max: 1.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Lead Exposed Pad Supplier Device Package: 6-DFN (2x5)	paquet: 6-SMD, Flat Lead Exposed Pad	Stock6 848	Logic Level Gate	20V	10A	9.5 mOhm @ 10A, 4.5V	1V @ 250µA	15nC @ 4.5V	1510pF @ 10V	1.7W	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, Flat Lead Exposed Pad	6-DFN (2x5)
FDD8424H_F085A	Fairchild/ON Semiconductor	MOSFET N/P-CH 40V 9A/6.5A DPAK FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A, 6.5A Rds On (Max) @ Id, Vgs: 24 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 20V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Supplier Device Package: TO-252-5	paquet: TO-252-5, DPak (4 Leads + Tab), TO-252AD	Stock3 440	Logic Level Gate	40V	9A, 6.5A	24 mOhm @ 9A, 10V	3V @ 250µA	20nC @ 10V	1000pF @ 20V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-5, DPak (4 Leads + Tab), TO-252AD	TO-252-5
SI3850ADV-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 20V 1.4A 6-TSOP FET Type: N and P-Channel, Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.4A, 960mA Rds On (Max) @ Id, Vgs: 300 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.08W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	paquet: SOT-23-6 Thin, TSOT-23-6	Stock252 300	Logic Level Gate	20V	1.4A, 960mA	300 mOhm @ 500mA, 4.5V	1.5V @ 250µA	1.4nC @ 4.5V	-	1.08W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
SI1913DH-T1-E3	Vishay Siliconix	MOSFET 2P-CH 20V 0.88A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 880mA Rds On (Max) @ Id, Vgs: 490 mOhm @ 880mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 570mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	paquet: 6-TSSOP, SC-88, SOT-363	Stock217 404	Logic Level Gate	20V	880mA	490 mOhm @ 880mA, 4.5V	1V @ 100µA	1.8nC @ 4.5V	-	570mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
FDS8926A	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 5.5A 8-SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	paquet: 8-SOIC (0.154", 3.90mm Width)	Stock97 692	Logic Level Gate	30V	5.5A	30 mOhm @ 5.5A, 4.5V	1V @ 250µA	28nC @ 4.5V	900pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NTJD2152PT1	ON Semiconductor	MOSFET 2P-CH 8V 0.775A SOT-363 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 775mA Rds On (Max) @ Id, Vgs: 300 mOhm @ 570mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 8V Power - Max: 270mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	paquet: 6-TSSOP, SC-88, SOT-363	Stock219 120	Logic Level Gate	8V	775mA	300 mOhm @ 570mA, 4.5V	1V @ 250µA	4nC @ 4.5V	225pF @ 8V	270mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
APTM10HM19FT3G	Microsemi Corporation	MOSFET 4N-CH 100V 70A SP3 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70A Rds On (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Power - Max: 208W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	paquet: SP3	Stock2 768	Standard	100V	70A	21 mOhm @ 35A, 10V	4V @ 1mA	200nC @ 10V	5100pF @ 25V	208W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
SI4900DY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 60V 5.3A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	paquet: 8-SOIC (0.154", 3.90mm Width)	Stock1 517 568	Logic Level Gate	60V	5.3A	58 mOhm @ 4.3A, 10V	3V @ 250µA	20nC @ 10V	665pF @ 15V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMS3600AS	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 15A/30A 8-PQFN FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 15A, 30A Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 13V Power - Max: 2.2W, 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	paquet: 8-PowerTDFN	Stock16 176	Logic Level Gate	25V	15A, 30A	5.6 mOhm @ 15A, 10V	2.7V @ 250µA	27nC @ 10V	1770pF @ 13V	2.2W, 2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
ZXMHC10A07N8TC	Diodes Incorporated	MOSFET 2N/2P-CH 100V 8-SOIC FET Type: 2 N and 2 P-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 800mA, 680mA Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 60V Power - Max: 870mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	paquet: 8-SOIC (0.154", 3.90mm Width)	Stock10 836	Standard	100V	800mA, 680mA	700 mOhm @ 1.5A, 10V	4V @ 250µA	2.9nC @ 10V	138pF @ 60V	870mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
CMLDM8005 TR	Central Semiconductor Corp	MOSFET 2P-CH 20V 0.65A SOT563 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 650mA Rds On (Max) @ Id, Vgs: 360 mOhm @ 350mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 16V Power - Max: 350mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	paquet: SOT-563, SOT-666	Stock5 904	Logic Level Gate	20V	650mA	360 mOhm @ 350mA, 4.5V	1V @ 250µA	1.2nC @ 4.5V	100pF @ 16V	350mW	-65°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
IRF7105PBF	Infineon Technologies	MOSFET N/P-CH 25V 8-SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A Rds On (Max) @ Id, Vgs: 100 mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	paquet: 8-SOIC (0.154", 3.90mm Width)	Stock18 420	Standard	25V	3.5A, 2.3A	100 mOhm @ 1A, 10V	3V @ 250µA	27nC @ 10V	330pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI6968BEDQ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 5.2A 8-TSSOP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	paquet: 8-TSSOP (0.173", 4.40mm Width)	Stock156 012	Logic Level Gate	20V	5.2A	22 mOhm @ 6.5A, 4.5V	1.6V @ 250µA	18nC @ 4.5V	-	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
DMN3018SSD-13	Diodes Incorporated	MOSFET 2N-CH 30V 6.7A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.7A Rds On (Max) @ Id, Vgs: 22 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 697pF @ 15V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	paquet: 8-SOIC (0.154", 3.90mm Width)	Stock16 068	Logic Level Gate	30V	6.7A	22 mOhm @ 10A, 10V	2.1V @ 250µA	13.2nC @ 10V	697pF @ 15V	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI1029X-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 60V SC89-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 305mA, 190mA Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	paquet: SOT-563, SOT-666	Stock36 000	Logic Level Gate	60V	305mA, 190mA	1.4 Ohm @ 500mA, 10V	2.5V @ 250µA	0.75nC @ 4.5V	30pF @ 25V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
SI5515DC-T1-E3	Vishay Siliconix	MOSFET N/P-CH 20V 4.4A 1206-8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.4A, 3A Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	paquet: 8-SMD, Flat Lead	Stock281 028	Logic Level Gate	20V	4.4A, 3A	40 mOhm @ 4.4A, 4.5V	1V @ 250µA	7.5nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
DMN6040SSD-13	Diodes Incorporated	MOSFET 2N-CH 60V 5A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	paquet: 8-SOIC (0.154", 3.90mm Width)	Stock361 182	Logic Level Gate	60V	5A	40 mOhm @ 4.5A, 10V	3V @ 250µA	22.4nC @ 10V	1287pF @ 25V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDZ2552P	Fairchild Semiconductor	MOSFET 2P-CH 20V 5.5A 18BGA FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 5.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 884pF @ 10V Power - Max: 2.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 18-WFBGA Supplier Device Package: 18-BGA (2.5x4)	paquet: -	Request a Quote	-	20V	5.5A (Ta)	45mOhm @ 5.5A, 4.5V	1.5V @ 250µA	13nC @ 4.5V	884pF @ 10V	2.1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	18-WFBGA	18-BGA (2.5x4)
NXH020F120MNF1PG	onsemi	SIC 4N-CH 1200V 51A 22PIM FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V Vgs(th) (Max) @ Id: 4.3V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V Power - Max: 119W (Tj) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: 22-PIM (33.8x42.5)	paquet: -	Request a Quote	-	1200V (1.2kV)	51A (Tc)	30mOhm @ 50A, 20V	4.3V @ 20mA	213.5nC @ 20V	2420pF @ 800V	119W (Tj)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	22-PIM (33.8x42.5)
IPG20N04S408BATMA1	Infineon Technologies	MOSFET 2N-CH 40V 20A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V Power - Max: 65W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	paquet: -	Stock14 994	-	40V	20A (Tc)	7.6mOhm @ 17A, 10V	4V @ 30µA	36nC @ 10V	2940pF @ 25V	65W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	8-PowerVDFN	PG-TDSON-8-10
SI7946ADP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 150V 7.7A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Rds On (Max) @ Id, Vgs: 186mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 7.5V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 75V Power - Max: 19.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	paquet: -	Request a Quote	-	150V	7.7A (Tc)	186mOhm @ 3A, 10V	3.5V @ 250µA	6.5nC @ 7.5V	230pF @ 75V	19.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
PJQ4848P-AU_R2_000A1	Panjit International Inc.	MOSFET 2N-CH 40V 9A/37A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 37A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V Power - Max: 2.4W (Ta), 39.6W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: DFN3333B-8	paquet: -	Stock62 283	-	40V	9A (Ta), 37A (Tc)	15mOhm @ 8A, 10V	2.5V @ 250µA	10nC @ 4.5V	1040pF @ 20V	2.4W (Ta), 39.6W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerWDFN	DFN3333B-8
AOC3860A	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 12V 25A 6ALPHADFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: 6-AlphaDFN (3.05x1.77)	paquet: -	Request a Quote	-	12V	25A (Ta)	3.5mOhm @ 5A, 4.5V	1V @ 250µA	44nC @ 4.5V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	6-AlphaDFN (3.05x1.77)
DMP58D1LVQ-7	Diodes Incorporated	MOSFET 2P-CH 50V 0.22A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V Power - Max: 490mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	paquet: -	Request a Quote	-	50V	220mA (Ta)	8Ohm @ 100mA, 5V	2V @ 250µA	1.2nC @ 10V	37pF @ 25V	490mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
EFC4C012NLTDG	onsemi	MOSFET 2N-CH 30V 30A 6WLCSP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2.5W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: 6-WLCSP (3.5x1.9)	paquet: -	Request a Quote	-	-	-	-	2.2V @ 1mA	18nC @ 4.5V	-	2.5W (Ta)	150°C (TJ)	Surface Mount	6-SMD, No Lead	6-WLCSP (3.5x1.9)
MSCSM170DUM058AG	Microchip Technology	SIC 2N-CH 1700V 353A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 353A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V Vgs(th) (Max) @ Id: 3.3V @ 15mA Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V Power - Max: 1642W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	paquet: -	Stock6	-	1700V (1.7kV)	353A (Tc)	7.5mOhm @ 180A, 20V	3.3V @ 15mA	1068nC @ 20V	19800pF @ 1000V	1642W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM70AM025CT6AG	Microchip Technology	SIC 700V 538A SP6C FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 538A (Tc) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6C	paquet: -	Request a Quote	-	700V	538A (Tc)	-	-	-	-	-	-	Chassis Mount	Module	SP6C
SQJ244EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 20A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 4A, 10V, 4.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V, 2800pF @ 25V Power - Max: 27W (Tc), 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric	paquet: -	Stock3	-	40V	20A (Tc), 60A (Tc)	11mOhm @ 4A, 10V, 4.5mOhm @ 10A, 10V	2.5V @ 250µA	20nC @ 10V, 45nC @ 10V	1200pF @ 25V, 2800pF @ 25V	27W (Tc), 48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual Asymmetric

AON5820_101

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 10A 6DFN

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 10V
Power - Max: 1.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Lead Exposed Pad
Supplier Device Package: 6-DFN (2x5)

paquet: 6-SMD, Flat Lead Exposed Pad

Stock6 848

Logic Level Gate

20V

10A

9.5 mOhm @ 10A, 4.5V

1V @ 250µA

15nC @ 4.5V

1510pF @ 10V

1.7W

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, Flat Lead Exposed Pad

6-DFN (2x5)

FDD8424H_F085A

Fairchild/ON Semiconductor

MOSFET N/P-CH 40V 9A/6.5A DPAK

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A, 6.5A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 20V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package: TO-252-5

paquet: TO-252-5, DPak (4 Leads + Tab), TO-252AD

Stock3 440

Logic Level Gate

40V

9A, 6.5A

24 mOhm @ 9A, 10V

3V @ 250µA

20nC @ 10V

1000pF @ 20V

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

TO-252-5, DPak (4 Leads + Tab), TO-252AD

TO-252-5

SI3850ADV-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V 1.4A 6-TSOP

FET Type: N and P-Channel, Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 960mA
Rds On (Max) @ Id, Vgs: 300 mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.08W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

paquet: SOT-23-6 Thin, TSOT-23-6

Stock252 300

Logic Level Gate

20V

1.4A, 960mA

300 mOhm @ 500mA, 4.5V

1.5V @ 250µA

1.4nC @ 4.5V

-

1.08W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

SI1913DH-T1-E3

Vishay Siliconix

MOSFET 2P-CH 20V 0.88A SC70-6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 880mA
Rds On (Max) @ Id, Vgs: 490 mOhm @ 880mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 570mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

paquet: 6-TSSOP, SC-88, SOT-363

Stock217 404

Logic Level Gate

20V

880mA

490 mOhm @ 880mA, 4.5V

1V @ 100µA

1.8nC @ 4.5V

-

570mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

FDS8926A

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 5.5A 8-SO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

paquet: 8-SOIC (0.154", 3.90mm Width)

Stock97 692

Logic Level Gate

30V

5.5A

30 mOhm @ 5.5A, 4.5V

1V @ 250µA

28nC @ 4.5V

900pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NTJD2152PT1

ON Semiconductor

MOSFET 2P-CH 8V 0.775A SOT-363

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 775mA
Rds On (Max) @ Id, Vgs: 300 mOhm @ 570mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 8V
Power - Max: 270mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

paquet: 6-TSSOP, SC-88, SOT-363

Stock219 120

Logic Level Gate

8V

775mA

300 mOhm @ 570mA, 4.5V

1V @ 250µA

4nC @ 4.5V

225pF @ 8V

270mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

APTM10HM19FT3G

Microsemi Corporation

MOSFET 4N-CH 100V 70A SP3

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Power - Max: 208W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

paquet: SP3

Stock2 768

Standard

100V

70A

21 mOhm @ 35A, 10V

4V @ 1mA

200nC @ 10V

5100pF @ 25V

208W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

SI4900DY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 60V 5.3A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

paquet: 8-SOIC (0.154", 3.90mm Width)

Stock1 517 568

Logic Level Gate

60V

5.3A

58 mOhm @ 4.3A, 10V

3V @ 250µA

20nC @ 10V

665pF @ 15V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDMS3600AS

Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 15A/30A 8-PQFN

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 15A, 30A
Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 13V
Power - Max: 2.2W, 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56

paquet: 8-PowerTDFN

Stock16 176

Logic Level Gate

25V

15A, 30A

5.6 mOhm @ 15A, 10V

2.7V @ 250µA

27nC @ 10V

1770pF @ 13V

2.2W, 2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

Power56

ZXMHC10A07N8TC

Diodes Incorporated

MOSFET 2N/2P-CH 100V 8-SOIC

FET Type: 2 N and 2 P-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 800mA, 680mA
Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 60V
Power - Max: 870mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

paquet: 8-SOIC (0.154", 3.90mm Width)

Stock10 836

Standard

100V

800mA, 680mA

700 mOhm @ 1.5A, 10V

4V @ 250µA

2.9nC @ 10V

138pF @ 60V

870mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

CMLDM8005 TR

Central Semiconductor Corp

MOSFET 2P-CH 20V 0.65A SOT563

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 650mA
Rds On (Max) @ Id, Vgs: 360 mOhm @ 350mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 16V
Power - Max: 350mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

paquet: SOT-563, SOT-666

Stock5 904

Logic Level Gate

20V

650mA

360 mOhm @ 350mA, 4.5V

1V @ 250µA

1.2nC @ 4.5V

100pF @ 16V

350mW

-65°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

IRF7105PBF

Infineon Technologies

MOSFET N/P-CH 25V 8-SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

paquet: 8-SOIC (0.154", 3.90mm Width)

Stock18 420

Standard

25V

3.5A, 2.3A

100 mOhm @ 1A, 10V

3V @ 250µA

27nC @ 10V

330pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI6968BEDQ-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 5.2A 8-TSSOP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

paquet: 8-TSSOP (0.173", 4.40mm Width)

Stock156 012

Logic Level Gate

20V

5.2A

22 mOhm @ 6.5A, 4.5V

1.6V @ 250µA

18nC @ 4.5V

-

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

DMN3018SSD-13

Diodes Incorporated

MOSFET 2N-CH 30V 6.7A 8SO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.7A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 697pF @ 15V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

paquet: 8-SOIC (0.154", 3.90mm Width)

Stock16 068

Logic Level Gate

30V

6.7A

22 mOhm @ 10A, 10V

2.1V @ 250µA

13.2nC @ 10V

697pF @ 15V

1.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI1029X-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 60V SC89-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA, 190mA
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

paquet: SOT-563, SOT-666

Stock36 000

Logic Level Gate

60V

305mA, 190mA

1.4 Ohm @ 500mA, 10V

2.5V @ 250µA

0.75nC @ 4.5V

30pF @ 25V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

SI5515DC-T1-E3

Vishay Siliconix

MOSFET N/P-CH 20V 4.4A 1206-8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.4A, 3A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

paquet: 8-SMD, Flat Lead

Stock281 028

Logic Level Gate

20V

4.4A, 3A

40 mOhm @ 4.4A, 4.5V

1V @ 250µA

7.5nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

1206-8 ChipFET?

DMN6040SSD-13

Diodes Incorporated

MOSFET 2N-CH 60V 5A 8SO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

paquet: 8-SOIC (0.154", 3.90mm Width)

Stock361 182

Logic Level Gate

60V

5A

40 mOhm @ 4.5A, 10V

3V @ 250µA

22.4nC @ 10V

1287pF @ 25V

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDZ2552P

Fairchild Semiconductor

MOSFET 2P-CH 20V 5.5A 18BGA

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 884pF @ 10V
Power - Max: 2.1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 18-WFBGA
Supplier Device Package: 18-BGA (2.5x4)

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20V

5.5A (Ta)

45mOhm @ 5.5A, 4.5V

1.5V @ 250µA

13nC @ 4.5V

884pF @ 10V

2.1W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

18-WFBGA

18-BGA (2.5x4)

NXH020F120MNF1PG

onsemi

SIC 4N-CH 1200V 51A 22PIM

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V
Power - Max: 119W (Tj)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: 22-PIM (33.8x42.5)

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1200V (1.2kV)

51A (Tc)

30mOhm @ 50A, 20V

4.3V @ 20mA

213.5nC @ 20V

2420pF @ 800V

119W (Tj)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

22-PIM (33.8x42.5)

IPG20N04S408BATMA1

Infineon Technologies

MOSFET 2N-CH 40V 20A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V
Power - Max: 65W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-10

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Stock14 994

-

40V

20A (Tc)

7.6mOhm @ 17A, 10V

4V @ 30µA

36nC @ 10V

2940pF @ 25V

65W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

8-PowerVDFN

PG-TDSON-8-10

SI7946ADP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 150V 7.7A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 186mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 7.5V
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 75V
Power - Max: 19.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

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150V

7.7A (Tc)

186mOhm @ 3A, 10V

3.5V @ 250µA

6.5nC @ 7.5V

230pF @ 75V

19.8W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

PJQ4848P-AU_R2_000A1

Panjit International Inc.

MOSFET 2N-CH 40V 9A/37A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V
Power - Max: 2.4W (Ta), 39.6W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: DFN3333B-8

paquet: -

Stock62 283

-

40V

9A (Ta), 37A (Tc)

15mOhm @ 8A, 10V

2.5V @ 250µA

10nC @ 4.5V

1040pF @ 20V

2.4W (Ta), 39.6W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerWDFN

DFN3333B-8

AOC3860A

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 12V 25A 6ALPHADFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: 6-AlphaDFN (3.05x1.77)

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12V

25A (Ta)

3.5mOhm @ 5A, 4.5V

1V @ 250µA

44nC @ 4.5V

-

2.5W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, No Lead

6-AlphaDFN (3.05x1.77)

DMP58D1LVQ-7

Diodes Incorporated

MOSFET 2P-CH 50V 0.22A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Power - Max: 490mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

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50V

220mA (Ta)

8Ohm @ 100mA, 5V

2V @ 250µA

1.2nC @ 10V

37pF @ 25V

490mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

EFC4C012NLTDG

onsemi

MOSFET 2N-CH 30V 30A 6WLCSP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2.5W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: 6-WLCSP (3.5x1.9)

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2.2V @ 1mA

18nC @ 4.5V

-

2.5W (Ta)

150°C (TJ)

Surface Mount

6-SMD, No Lead

6-WLCSP (3.5x1.9)

MSCSM170DUM058AG

Microchip Technology

SIC 2N-CH 1700V 353A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V
Vgs(th) (Max) @ Id: 3.3V @ 15mA
Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V
Power - Max: 1642W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

paquet: -

Stock6

-

1700V (1.7kV)

353A (Tc)

7.5mOhm @ 180A, 20V

3.3V @ 15mA

1068nC @ 20V

19800pF @ 1000V

1642W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM70AM025CT6AG

Microchip Technology

SIC 700V 538A SP6C

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 538A (Tc)
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP6C

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-

700V

538A (Tc)

-

Chassis Mount

Module

SP6C

SQJ244EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 20A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 4A, 10V, 4.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V, 2800pF @ 25V
Power - Max: 27W (Tc), 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric

paquet: -

Stock3

-

40V

20A (Tc), 60A (Tc)

11mOhm @ 4A, 10V, 4.5mOhm @ 10A, 10V

2.5V @ 250µA

20nC @ 10V, 45nC @ 10V

1200pF @ 25V, 2800pF @ 25V

27W (Tc), 48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

PowerPAK® SO-8 Dual Asymmetric