Page 41 - Transistors - Bipolaires (BJT) - RF | Produits à semiconducteurs discrets | Heisener Electronics
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Transistors - Bipolaires (BJT) - RF

Dossiers 1 633
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Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFG135AE6327XT
Infineon Technologies

TRANS NPN RF 15V 150MA SOT223

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
  • Gain: 9dB ~ 14dB
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 8V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: PG-SOT223-4
paquet: TO-261-4, TO-261AA
Stock2 768
15V
6GHz
1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
9dB ~ 14dB
1W
80 @ 100mA, 8V
150mA
-
Surface Mount
TO-261-4, TO-261AA
PG-SOT223-4
hot 2SC5508-T2-A
CEL

RF TRANSISTOR NPN SOT-343F

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.3V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 2GHz
  • Gain: 17dB
  • Power - Max: 115mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 2V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: SOT-343F
paquet: SOT-343F
Stock6 458 508
3.3V
25GHz
1.1dB @ 2GHz
17dB
115mW
50 @ 5mA, 2V
35mA
150°C (TJ)
Surface Mount
SOT-343F
SOT-343F
MS2205
Microsemi Corporation

TRANS RF BIPO 21.9W 1A M220

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9.5dB
  • Power - Max: 21.9W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 1A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M105
  • Supplier Device Package: M105
paquet: M105
Stock5 584
45V
1.025GHz ~ 1.15GHz
-
9.5dB
21.9W
10 @ 100mA, 5V
1A
200°C (TJ)
Chassis Mount
M105
M105
hot LM3046MX
Texas Instruments

IC TRANSISTOR ARRAY 14-SOIC

  • Transistor Type: 5 NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 3.25dB @ 1kHz
  • Gain: -
  • Power - Max: 750mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 3V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
paquet: 14-SOIC (0.154", 3.90mm Width)
Stock21 684
15V
-
3.25dB @ 1kHz
-
750mW
40 @ 1mA, 3V
50mA
-40°C ~ 85°C (TA)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SOIC
hot MPSH17
Fairchild/ON Semiconductor

TRANS NPN 15V TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 800MHz
  • Noise Figure (dB Typ @ f): 6dB @ 200MHz
  • Gain: 24dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA)
Stock36 000
15V
800MHz
6dB @ 200MHz
24dB
350mW
25 @ 5mA, 10V
-
-
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
UPA802T-A
CEL

RF DUAL TRANSISTORS NPN SOT-363

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
  • Gain: 12dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
paquet: 6-TSSOP, SC-88, SOT-363
Stock7 440
10V
7GHz
1.4dB @ 1GHz
12dB
200mW
70 @ 7mA, 3V
65mA
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
NE856M02-AZ
CEL

RF TRANSISTOR NPN SOT-89

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6.5GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 12dB
  • Power - Max: 1.2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
paquet: TO-243AA
Stock5 680
12V
6.5GHz
1.1dB @ 1GHz
12dB
1.2W
50 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
NE68819-A
CEL

TRANSISTOR NPN 2GHZ MINIMOLD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 1.7dB ~ 2.5dB @ 2GHz
  • Gain: -
  • Power - Max: 125mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: 3-SuperMiniMold (19)
paquet: SOT-523
Stock4 672
6V
5GHz
1.7dB ~ 2.5dB @ 2GHz
-
125mW
80 @ 3mA, 1V
100mA
150°C (TJ)
Surface Mount
SOT-523
3-SuperMiniMold (19)
NE94430-T1-A
CEL

TRANS NPN OSC FT=2GHZ SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 2GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
paquet: SC-70, SOT-323
Stock7 424
15V
2GHz
-
-
150mW
40 @ 5mA, 10V
50mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
hot MMBTH34
Fairchild/ON Semiconductor

TRANSISTOR RF NPN SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Frequency - Transition: 500MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 20mA, 2V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
paquet: TO-236-3, SC-59, SOT-23-3
Stock828 000
40V
500MHz
-
-
225mW
15 @ 20mA, 2V
50mA
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
SD1728
STMicroelectronics

TRANSISTOR NPN RF HF SSB M177

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 15dB ~ 17dB
  • Power - Max: 330W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 23 @ 10A, 6V
  • Current - Collector (Ic) (Max): 40A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: M177
  • Supplier Device Package: M177
paquet: M177
Stock3 392
55V
-
-
15dB ~ 17dB
330W
23 @ 10A, 6V
40A
200°C (TJ)
Surface Mount
M177
M177
hot MPSH17G
ON Semiconductor

TRANS NPN RF SS 15V TO92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 800MHz
  • Noise Figure (dB Typ @ f): 6dB @ 200MHz
  • Gain: 24dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA)
Stock57 564
15V
800MHz
6dB @ 200MHz
24dB
350mW
25 @ 5mA, 10V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
BFG97,135
NXP

TRANS NPN 15V 100MA 5GHZ SOT223

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5.5GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 70mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
paquet: TO-261-4, TO-261AA
Stock4 960
15V
5.5GHz
-
-
1W
25 @ 70mA, 10V
100mA
175°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
UTV8100B
Microsemi Corporation

TRANS RF BIPO 290W 15A 55RT2

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Frequency - Transition: 470MHz ~ 860MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.5dB ~ 9.5dB
  • Power - Max: 290W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 15A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55RT
  • Supplier Device Package: 55RT
paquet: 55RT
Stock3 424
60V
470MHz ~ 860MHz
-
8.5dB ~ 9.5dB
290W
20 @ 1A, 5V
15A
200°C (TJ)
Chassis Mount
55RT
55RT
MSC1450M
Microsemi Corporation

TRANS RF BIPO 910W 28A M216

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.09GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB
  • Power - Max: 910W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
  • Current - Collector (Ic) (Max): 28A
  • Operating Temperature: 250°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M216
  • Supplier Device Package: M216
paquet: M216
Stock5 504
65V
1.09GHz
-
7dB
910W
15 @ 1A, 5V
28A
250°C (TJ)
Chassis Mount
M216
M216
AT-32063-BLKG
Broadcom Limited

TRANS NPN BIPO 5.5V 32MA SOT-363

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz
  • Gain: 12.5dB ~ 14.5dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 2.7V
  • Current - Collector (Ic) (Max): 32mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
paquet: 6-TSSOP, SC-88, SOT-363
Stock4 352
5.5V
-
1.1dB ~ 1.4dB @ 900MHz
12.5dB ~ 14.5dB
150mW
50 @ 5mA, 2.7V
32mA
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
hot MRF327
M/A-Com Technology Solutions

TRANS RF NPN 33V 9A 316-01

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 33V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB
  • Power - Max: 80W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 5V
  • Current - Collector (Ic) (Max): 9A
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: 316-01
  • Supplier Device Package: 316-01, STYLE 1
paquet: 316-01
Stock4 352
33V
-
-
9dB
80W
20 @ 4A, 5V
9A
-
Chassis Mount
316-01
316-01, STYLE 1
BFU520XAR
NXP

TRANS RF NPN 12V 30MA SOT-143B

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10.5GHz
  • Noise Figure (dB Typ @ f): 0.7dB @ 900MHz
  • Gain: 20dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
paquet: TO-253-4, TO-253AA
Stock6 480
12V
10.5GHz
0.7dB @ 900MHz
20dB
450mW
60 @ 5mA, 8V
30mA
-40°C ~ 150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143B
BFR 181 E6327
Infineon Technologies

TRANSISTOR NPN RF 12V SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
  • Gain: 18.5dB
  • Power - Max: 175mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
paquet: TO-236-3, SC-59, SOT-23-3
Stock27 678
12V
8GHz
0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
18.5dB
175mW
70 @ 5mA, 8V
20mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
BFP196E6327HTSA1
Infineon Technologies

TRANSISTOR NPN RF 12V SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7.5GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
  • Gain: 10.5dB ~ 16.5dB
  • Power - Max: 700mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: PG-SOT143-4
paquet: TO-253-4, TO-253AA
Stock132 432
12V
7.5GHz
1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
10.5dB ~ 16.5dB
700mW
70 @ 50mA, 8V
150mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
PG-SOT143-4
2SC3583-A
CEL

RF TRANS NPN 10V 9GHZ SOT23-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 15dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
paquet: -
Request a Quote
10V
9GHz
1.2dB @ 1GHz
15dB
200mW
50 @ 20mA, 8V
65mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
HFA3127MJR4598
Harris Corporation

ULTRA-HIGH FREQUENCY TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2SC3357-A
CEL

RF TRANS NPN 12V 6.5GHZ SOT89

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6.5GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 1.2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
paquet: -
Request a Quote
12V
6.5GHz
1.8dB @ 1GHz
9dB
1.2W
50 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
2SC5753-A
CEL

RF TRANS NPN 6V 12GHZ SOT343F

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
  • Gain: 13.5dB
  • Power - Max: 205mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: -
paquet: -
Request a Quote
6V
12GHz
1.7dB @ 2GHz
13.5dB
205mW
75 @ 30mA, 3V
100mA
150°C (TJ)
Surface Mount
SOT-343F
-
2SC3775-3-TB-E
Sanyo

NPN EPITAXIAL PLANAR SILICON

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 900MHz
  • Gain: 14dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: 3-CP
paquet: -
Request a Quote
12V
5GHz
1.5dB @ 900MHz
14dB
250mW
60 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
3-CP
48042
Microsemi Corporation

RF POWER TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2SC4454Q-AC
onsemi

RF NPN 0.2A

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
BFP490E6327
Infineon Technologies

SMALL SIGNAL BIPOLAR TRANSISTOR

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.5V
  • Frequency - Transition: 17.5GHz
  • Noise Figure (dB Typ @ f): 3.3dB @ 1.8GHz
  • Gain: 8.5dB
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 200mA, 3V
  • Current - Collector (Ic) (Max): 600mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-80
  • Supplier Device Package: PG-SCD80-2
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4.5V
17.5GHz
3.3dB @ 1.8GHz
8.5dB
1W
50 @ 200mA, 3V
600mA
150°C (TJ)
Surface Mount
SC-80
PG-SCD80-2