Page 38 - Transistors - Bipolaires (BJT) - RF | Produits à semiconducteurs discrets | Heisener Electronics
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Transistors - Bipolaires (BJT) - RF

Dossiers 1 633
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Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFG 19S E6327
Infineon Technologies

TRANSISTOR RF NPN 15V SOT-223

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5.5GHz
  • Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 900MHz ~ 1.8GHz
  • Gain: 14dB ~ 8.5dB
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
  • Current - Collector (Ic) (Max): 210mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: PG-SOT223-4
paquet: TO-261-4, TO-261AA
Stock6 384
15V
5.5GHz
2dB ~ 3dB @ 900MHz ~ 1.8GHz
14dB ~ 8.5dB
1W
70 @ 70mA, 8V
210mA
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
PG-SOT223-4
BF 770A E6327
Infineon Technologies

TRANSISTOR RF NPN 12V SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
  • Gain: 9.5dB ~ 14.5dB
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
  • Current - Collector (Ic) (Max): 90mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
paquet: TO-236-3, SC-59, SOT-23-3
Stock5 072
12V
6GHz
1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
9.5dB ~ 14.5dB
300mW
70 @ 30mA, 8V
90mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
hot NE67739-T1-A
CEL

RF TRANSISTOR NPN SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 14.5GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
  • Gain: 12dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
paquet: TO-253-4, TO-253AA
Stock7 552
6V
14.5GHz
1.5dB @ 2GHz
12dB
200mW
75 @ 20mA, 3V
50mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
AT-64023
Broadcom Limited

TRANS NPN BIPO 20V 200MA 230-SMD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 110mA, 8V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD (230 mil BeO)
  • Supplier Device Package: 230 mil Be0
paquet: 4-SMD (230 mil BeO)
Stock7 472
20V
-
-
-
3W
20 @ 110mA, 8V
200mA
200°C (TJ)
Surface Mount
4-SMD (230 mil BeO)
230 mil Be0
NE68039-T1-A
CEL

RF TRANSISTOR NPN SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
  • Gain: 11dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
paquet: TO-253-4, TO-253AA
Stock2 384
10V
10GHz
1.8dB @ 2GHz
11dB
200mW
50 @ 10mA, 6V
35mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
KSC1674YTA
Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
  • Gain: -
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
paquet: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock5 328
20V
600MHz
3dB ~ 5dB @ 100MHz
-
250mW
120 @ 1mA, 6V
20mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot KSC2755YMTF
Fairchild/ON Semiconductor

TRANSISTOR NPN 30V 20MA SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 0.3dB @ 200MHz
  • Gain: 20dB ~ 23dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 3mA, 10V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
paquet: TO-236-3, SC-59, SOT-23-3
Stock2 052 000
30V
600MHz
0.3dB @ 200MHz
20dB ~ 23dB
150mW
120 @ 3mA, 10V
20mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
NESG2101M05-A
CEL

TRANS NPN 2GHZ M05

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 17GHz
  • Noise Figure (dB Typ @ f): 0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
  • Gain: 11dB ~ 19dB
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 15mA, 2V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: M05
paquet: SOT-343F
Stock2 880
5V
17GHz
0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
11dB ~ 19dB
500mW
130 @ 15mA, 2V
100mA
150°C (TJ)
Surface Mount
SOT-343F
M05
hot AT-41511-TR1
Broadcom Limited

IC TRANS NPN GP BIPOLAR SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1dB ~ 1.7dB @ 900MHz ~ 2.4GHz
  • Gain: 11dB ~ 15.5dB
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
paquet: TO-253-4, TO-253AA
Stock506 136
12V
-
1dB ~ 1.7dB @ 900MHz ~ 2.4GHz
11dB ~ 15.5dB
225mW
30 @ 5mA, 5V
50mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
hot 2SC4627J0L
Panasonic Electronic Components

TRANS NPN HF 20VCEO 15MA SS-MINI

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): 3.3dB @ 100MHz
  • Gain: 24dB
  • Power - Max: 125mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 15mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: SSMini3-F1
paquet: SC-89, SOT-490
Stock823 080
20V
650MHz
3.3dB @ 100MHz
24dB
125mW
65 @ 1mA, 6V
15mA
125°C (TJ)
Surface Mount
SC-89, SOT-490
SSMini3-F1
BFS520,135
NXP

TRANS NPN 15V 70MA 9GHZ SOT323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
paquet: SC-70, SOT-323
Stock6 608
15V
9GHz
1.1dB ~ 2.1dB @ 900MHz
-
300mW
60 @ 20mA, 6V
70mA
175°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323-3
BFG540,215
NXP

TRANS RF 15V 9GHZ SOT143B

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 900MHz
  • Gain: -
  • Power - Max: 400mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 8V
  • Current - Collector (Ic) (Max): 120mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
paquet: TO-253-4, TO-253AA
Stock5 600
15V
9GHz
1.3dB ~ 1.8dB @ 900MHz
-
400mW
60 @ 40mA, 8V
120mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143B
BFG67,235
NXP

TRANS RF NPN 8GHZ 10V SOT143B

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
  • Gain: -
  • Power - Max: 380mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
paquet: TO-253-4, TO-253AA
Stock3 104
10V
8GHz
1.3dB ~ 3dB @ 1GHz ~ 2GHz
-
380mW
60 @ 15mA, 5V
50mA
175°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143B
TPR1000
Microsemi Corporation

TRANS RF BIPO 2900W 80A 55KV1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.09GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 6dB
  • Power - Max: 2900W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 80A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55KV
  • Supplier Device Package: 55KV
paquet: 55KV
Stock5 152
65V
1.09GHz
-
6dB
2900W
10 @ 1A, 5V
80A
200°C (TJ)
Chassis Mount
55KV
55KV
hot 2001
Microsemi Corporation

TRANS HBT RF BIPOLAR 55BT

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Frequency - Transition: 2GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9.5dB
  • Power - Max: 5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 250mA
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: 55BT
  • Supplier Device Package: 55BT
paquet: 55BT
Stock3 904
50V
2GHz
-
9.5dB
5W
20 @ 100mA, 5V
250mA
-
Chassis Mount
55BT
55BT
hot 2N5179
Microsemi Corporation

TRANS RF NPN 12V 50MA TO72

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 200MHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 200MHz
  • Gain: 20dB
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72
paquet: TO-206AF, TO-72-4 Metal Can
Stock17 928
12V
200MHz
4.5dB @ 200MHz
20dB
300mW
25 @ 3mA, 1V
50mA
-
Through Hole
TO-206AF, TO-72-4 Metal Can
TO-72
MCH4021-TL-E
ON Semiconductor

TRANS NPN 8V 150MA MCPH4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 8V
  • Frequency - Transition: 16GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 17.5dB
  • Power - Max: 400mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-MCPH
paquet: 4-SMD, Flat Leads
Stock3 344
8V
16GHz
1.2dB @ 1GHz
17.5dB
400mW
60 @ 50mA, 5V
150mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-MCPH
MRF454
M/A-Com Technology Solutions

TRANS RF NPN 25V 20A 211-11

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 12dB
  • Power - Max: 80W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
  • Current - Collector (Ic) (Max): 20A
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: 211-11, Style 2
  • Supplier Device Package: 211-11, Style 2
paquet: 211-11, Style 2
Stock7 504
25V
-
-
12dB
80W
40 @ 5A, 5V
20A
-
Chassis Mount
211-11, Style 2
211-11, Style 2
BFP 193 E6327
Infineon Technologies

TRANSISTOR NPN RF 12V SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
  • Gain: 12dB ~ 18dB
  • Power - Max: 580mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: PG-SOT143-4
paquet: TO-253-4, TO-253AA
Stock3 408
12V
8GHz
1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
12dB ~ 18dB
580mW
70 @ 30mA, 8V
80mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
PG-SOT143-4
BFU530WX
NXP

TRANS RF NPN 12V 40MA SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 0.6dB @ 900MHz
  • Gain: 18.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
paquet: SC-70, SOT-323
Stock6 496
12V
11GHz
0.6dB @ 900MHz
18.5dB
450mW
60 @ 10mA, 8V
40mA
-40°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323-3
hot 2SC4915-O,LF
Toshiba Semiconductor and Storage

TRANS RF NPN 30V 550MHZ SSM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 550MHz
  • Noise Figure (dB Typ @ f): 2.3dB ~ 5dB @ 100MHz
  • Gain: 17dB ~ 23dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
paquet: SC-75, SOT-416
Stock72 000
30V
550MHz
2.3dB ~ 5dB @ 100MHz
17dB ~ 23dB
100mW
70 @ 1mA, 6V
20mA
125°C (TJ)
Surface Mount
SC-75, SOT-416
SSM
hot 2SC4215-Y(TE85L,F)
Toshiba Semiconductor and Storage

TRANS RF NPN 30V 550MHZ USM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 550MHz
  • Noise Figure (dB Typ @ f): 2dB ~ 5dB @ 100MHz
  • Gain: 17dB ~ 23dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
paquet: SC-70, SOT-323
Stock13 080
30V
550MHz
2dB ~ 5dB @ 100MHz
17dB ~ 23dB
100mW
100 @ 1mA, 6V
20mA
125°C (TJ)
Surface Mount
SC-70, SOT-323
USM
BFU550XAR
NXP

TRANS RF NPN 12V 50MA SOT-143B

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 0.75db @ 900MHz
  • Gain: 21.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount, Gull Wing
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
paquet: TO-253-4, TO-253AA
Stock25 962
12V
11GHz
0.75db @ 900MHz
21.5dB
450mW
60 @ 15mA, 8V
50mA
-40°C ~ 150°C (TJ)
Surface Mount, Gull Wing
TO-253-4, TO-253AA
SOT-143B
hot MMBT918LT1G
ON Semiconductor

TRANS SS VHF NPN 15V SOT23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 6dB @ 60MHz
  • Gain: 11dB
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
paquet: TO-236-3, SC-59, SOT-23-3
Stock1 699 752
15V
600MHz
6dB @ 60MHz
11dB
225mW
20 @ 3mA, 1V
50mA
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
MCH4021-TL-H
onsemi

RF TRANS NPN 8V 16GHZ 4MCPH

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 8V
  • Frequency - Transition: 16GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 17.5dB
  • Power - Max: 400mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-MCPH
paquet: -
Request a Quote
8V
16GHz
1.2dB @ 1GHz
17.5dB
400mW
60 @ 50mA, 5V
150mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-MCPH
MRF316
MACOM Technology Solutions

TRANS RF NPN 35V 9A 316-01

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 13dB
  • Power - Max: 80W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 4A, 5V
  • Current - Collector (Ic) (Max): 9A
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: 316-01
  • Supplier Device Package: 316-01, STYLE 1
paquet: -
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35V
-
-
13dB
80W
10 @ 4A, 5V
9A
-
Chassis Mount
316-01
316-01, STYLE 1
PH2729-110M
MACOM Technology Solutions

TRANSISTOR,110W,2.7-2.9GHZ,100US

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 63V
  • Frequency - Transition: 2.7GHz ~ 2.9GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 6.8dB
  • Power - Max: 330W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 8A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 2L-FLG
  • Supplier Device Package: 2L-FLG
paquet: -
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63V
2.7GHz ~ 2.9GHz
-
6.8dB
330W
-
8A
200°C (TJ)
Chassis Mount
2L-FLG
2L-FLG
2SC5080ZD-TL
Renesas Electronics Corporation

RF 0.05A, NPN

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
paquet: -
Request a Quote
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