Date de Parution: 2015-07-07
Vishay SiHx28N60EF / SiHx33N60EF EF series power MOSFETs are 600V fast body diode N-channel power MOSFETs developed for ZVS / soft-switching PWM topologies such as phase shifting bridges and LLC converter half bridges.
SiHx28N60EF / SiHx33N60EF EF series power MOSFETs improve the reliability of these applications by providing a Qrr 10 times lower than standard MOSFETs. This enables the device to regain the ability to block the full breakdown voltage faster, helping to avoid failures due to breakdown and thermal overload.
In addition, reduced Qrr results in lower reverse recovery losses compared to standard MOSFETs. The device's ultra-low on-resistance and gate charge translate into extremely low on- and switching losses, which saves energy in high-power, high-performance switch-mode applications. This series is based on E-series super junction technology, is rated for avalanche energy efficiency (UIS), and is available in TO-220, TO-263, TO-220F and TO-247AC packages.
