The Wolfspeed SiC mosfet C3M in the TOLL package provides much lower resistance temperature dependence than standard silicon mosfets. The device is ideal for applications with higher switching frequencies (achieving high power density) and provides a minimum leakage of 3.5mm (to the source).
Superior switching speed and low conduction loss are crucial for the next generation power supply to provide high efficiency under high power. SiC mosfet is optimized for high-performance power electronics applications, including enterprise, server and telecom power supply, electric vehicle charging system, energy storage system and battery management system.
SiC mosfet achieves compact footprint, lower loss and high power loss TOLL package, allowing high power density design. They feature larger back metal labels to achieve lower device temperatures. It provides a smaller height and footprint than the standard to-263 - 7l package.
