Toshiba Electronics Europe Ltd. has released five new third-generation 650V SiC MOSFET devices for industrial equipment. Like earlier devices, the new third-generation mosfet contains a built-in SiC Schottky barrier with a low forward voltage (VF) -1.35V (typ) to suppress RDS(on) fluctuations for improved reliability sex. The new device can handle currents up to 100A with RDS(on) values as low as 15mOhm. All devices are packaged in industry standard TO-247 packages.
The TW015N65C, TW027N65C, TW048N65C, TW083N65C and TW107N65C are based on the company's advanced third-generation SiC process that optimizes the cell structure used in the second-generation devices. These efficient and versatile products will be used in a variety of demanding applications including SMPS and UPS for servers, data centers and communications equipment. They will also find applications in renewable energy, including photovoltaic inverters and bidirectional DC-DC converters, such as those used to charge electric vehicles.
As a result of this advancement, the critical FoM, which is the product of drain-source on-resistance (RDS(on)) and gate-on charge (Qg), used to represent static and dynamic losses, has improved by approximately 80%. This greatly reduces losses and allows the production of power solutions with higher power density and lower operating costs.
