Recently, Vishay Intertechnology, Inc. represents a new type of IV power MOSFET transistor, Generation IV n-channel 25V, claiming that it has the lowest resistance industrial input of Vishay Siliconix SiRA20DP from 0.58 milliohms to 10V, which can provide a wide range of applications. Higher power density And the efficiency depends on the resistive device's utility index (FOM) strength is less than 0.6mΩ, which can provide the minimum load on the gate and shutter load.
The PowerPAK SO-8 with a case size of 6mmx5mm is considered to be one of the world's two 25V MOS transistors with a maximum fire resistance of less than 0.6 milliohms. In comparison, the SiRA20DP has a typical lower input load of 61 nK and a lower 32% FOM of 0.035 ohm * nC. The connection resistance of all other MOS transistors with a channel n 25 V is 11% or higher.
The low resistance of the SiRA20DP minimizes power consumption, improves system efficiency, and provides higher power density, making it ideal for use in redundant power architectures or functions. Low FOM MOSFETs can increase DC-DC conversion power and communication server, and the voltage of the memory battery switch system is increased from 5V to 12V. Switching load and input voltage rail switching characteristics
