New Yorker Electronics has released a new Vishay Siliconix 30V N-channel Groin FET, Gen V Power MOSFET, that provides the best pass-like resistance at 10V at 0.95mOhm, a 5% improvement over the previous generation. Provides higher power density and efficiency for isolated and unisolated topologies. The Vishay Siliconix SiSS52DN comes in a 3.3mm x 3.3mm thermal enhanced PowerPAK 1212-8s package.
The FOM of the device is 29% higher than the previous generation, reducing on-off and switching losses, resulting in energy savings in power conversion applications. It has a temperature range of -55℃ to +150℃. In addition, the device provides a 1.5mOhm on-resistance at 4.5V, while at 4.5V its 29.8mOhm*nC on-resistance times the gate charge -- the key FOM for mosFEts used in switching applications -- is one of the lowest devices available.
The new device is also 100% RG and UI tested, roHS compliant and halogen-free. Single-configuration devices are excellent for low-side switching of synchronous rectifier, synchronous step-down converters, switching slot topologies, OR-Ring FETs, DC-DC converters, and load switches for server, telecom, and RF equipment power supplies. By achieving high performance in both isolated and non-isolated topologies, MOSFET simplifies some of the choices designers have to work with both.
