Infineon Technologies and Panasonic Have signed an agreement to jointly develop and produce their second generation (Gen2) GaN technology, providing higher efficiency and power density levels. Gen2 will be developed as a 650V GaN HEMT based on market demand. The superior performance and reliability, as well as the 8-inch GAN-on-Si wafer production capacity, mark a strategic extension of Infineon to meet the growing demand for GaN power semiconductors. The equipment will provide ease of use and improved cost performance targeting high and low power SMPS applications, renewable energy, motor drive applications and more.
"In addition to the same high reliability standards as the Chuang 1, customers with the new generation will benefit from easier control of transistors as well as a significant increase in the cost of location due to the move to an 8" wafer manufacturing, "said Andreas Urschitz, president of Infineon's power and sensor systems. Like the first generation of jointly developed devices, infineon's CoolGaN and Panasonic's X-Gan, the second generation will be based on gan-on-Silicon transistor structures that are usually turned off. This, along with the unmatched robustness of the hybrid drain embedded Gate injection transistor (HD-Git) architecture, makes these components the product of choice and one of the most long-term reliable solutions on the market.
"We are pleased to expand our partnership with Infineon in gallium nitride components. Through this joint approach, we will be able to apply Gen1 and Gen2 devices on a high-quality basis based on the latest innovative developments."
