Infineon Technologies Bipolar GmbH & Co. KG has introduced a new press-fit IGBT (PPI) with an internal freewheeling diode (FWD) in a ceramic flat-panel package, further expanding its lineup of high-power Prime Switch series. Designed for power transmission and distribution applications, this PPI is ideal for high current modular multilevel converters (MMC), medium voltage drives, DC grid circuit breakers, wind power converters and traction systems.
The blocking voltage of the Prime Switch IGBT is 4.5 kV, the current of the model without FWD is 3000 A, and the model with FWD is 2000 A. Infineon offers external freewheeling diodes for the 3000A PPI with 4 different package diameters: D1600U45X122, D2700U45X122, D3900U45X172 and D4600U45X172. Combined with highly reliable press-fit technology, this leading-edge high-voltage IGBT chip trench technology, which has been in use for over 40 years, provides customers with exceptional high-performance solutions for ultra-high power applications. In addition, these devices open up new opportunities to reduce losses and cost and improve reliability in high-power applications.
PPI's packages are hermetically sealed and designed to withstand system-induced failure events. Thus, in addition to having a "short-on-fail" function, the PPI also has an extremely rugged package. In order to cover a wider range of applications and power ranges, Infineon has created an ideal product portfolio with different current values and topologies thanks to the innovative design of internal chip subunits and packaging.
