Infineon Technologies has announced the industry's first high-density RadTol NOR flash product that conforms to the MIL-PRF-38535 QML-V process (QML-V equivalent). To meet the growing demand for highly reliable memory, space-level FPgas require reliable, high-density non-volatile memory, including their boot configuration. The QML-V process means certification of the highest quality and reliability standards for aerospace grade integrated circuits.
256Mb and 512Mb RadTol NOR Flash non-volatile memory provides superior low-pin number single-chip solutions for applications including FPGA configuration, image storage, microcontroller data, and boot code storage. When used at higher clock rates, the device supports data transfer that matches or exceeds traditional parallel asynchronous NOR flash, while significantly reducing the number of pins. These devices can withstand up to 30krad (Si) bias and 125krad (Si) unbiased radiation. At 125C, the device supports 1,000 programming/erasure cycles and 30 years of data retention; At 85C, 10K programming/erasure cycles and 250 years of data retention are supported.
Helmut Puchner, VP Fellow of Aerospace and Defense at Infineon Technologies said:"The latest space-class FPgas fully support our radiation-resistant dual QSPI non-volatile memory. They provide superior, low-pin count, single-chip selection solutions for configuring processors and FPGas,""For example, the entire image of the Xilinx Kintex UltraScale XQRKU060 can load in about 0.2 seconds in dual four-channel mode."
These devices can be programmed within the system via FPgas or standalone programmers in the same 36-pin ceramic flat package. The company's development suites and software further simplify design implementation.
