EPC Corporation announces the EPC7004, a 100 V, 7 mΩ, 160 APulsed radiation-hardened GaN FET. Sizes as small as 6.56 mm2, its total dose rating is greater than 1 Mrad, and the linear energy transfer (LET) single event effect (SEE) immunity is 85 MeV/(mg/cm2). The EPC7004 and EPC7014, EPC7007, EPC7019 and EPC7018 devices are available in chip-scale packages, the same as other commercial gallium nitride field effect transistors (eGaN® FETs) and ICs. Packaged devices will be provided by EPC Space.
With the advantages of higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and ultra-low on-resistance, GaN power components are significantly better than silicon-based components. Demanding aerospace missions enable higher switching frequencies, power density, efficiency, and smaller and lighter circuits. Solutions based on GaN components can operate at higher total radiation, SEE and LET levels than silicon solutions.
Applications that benefit from the EPC7004's superior electrical and radiation tolerance include DC/DC power supplies, motor drives, lidar, deep detection, and ion thrusters for aerospace applications, satellites and avionics. Other radiation tolerant products include 40 V to 200 V GaN products available.
"The 100 V EPC7018 and EPC7004 offer different size/power tradeoffs with ultra-low on-resistance, allowing design engineers to implement a new generation of power conversion solutions in aerospace applications," said Alex Lidow, CEO and co-founder of EPC Corporation. Solutions and motor drives that operate at higher frequencies, efficiencies and power densities that were previously unattainable.”
