Date de Parution: 2015-08-25
The GaN High Electron Mobility Transistor (HEMT) monolithic microwave integrated circuit (MMIC) from Cree is targeted at X-band and C-band high-frequency applications.
The transistor has a wide band gap material and is used in high-power and high-performance semiconductors. Its electrical characteristics are superior to traditional silicon devices and can be used in many applications including power conversion systems. High-speed GaN devices show clear performance advantages in sensitive radar equipment, satellite radio, and broadband amplifiers. GaN MMIC transistors provide a very wide signal bandwidth with a small footprint. The CMPA5585025F MMIC has a minimum power output of 25W and is used for 5.5 to 8.5GHz C-band communications. The CMPA801B025F MMIC provides 25W of power to the 8 to 11GHz X-band used by radar and communication systems. The high-end CMPA601C025F MMIC supports X-band operating frequencies from 6GHz to 12GHz at 35Ws. The device provides screw terminal installation.
These devices are aimed at high-precision, high-reliability high-frequency applications, such as marine and land-based radar systems, broadband radio amplifiers, point-to-point radio systems, including uplink satellite communication and test equipment amplifiers.
