Basic semiconductor once again appeared in the world's most powerful semiconductor exhibition - PCIM Europe 2023, in Nuremberg, Germany, the official release of the second generation of silicon carbide MOSFET products. The performance of the new generation of products has been greatly improved, and the product types have been further enriched, helping to achieve better energy efficiency and application reliability in the industries of new energy vehicles, DC fast charging, photovoltaic energy storage, industrial power supply, communication power supply and so on.
Silicon carbide MOSFET has excellent high frequency, high voltage and high temperature performance. It is the most popular wide band gap power semiconductor device in the field of power electronics. The application of silicon carbide MOSFET to replace traditional silicon IGBT devices in power electronic system can improve the switching frequency of power loop, improve the efficiency and power density of the system, and reduce the comprehensive cost of the system.
Basic Semiconductor's second generation silicon Carbide MOSFET family is developed on a 6-inch wafer platform that delivers superior specific on-resistance, switching loss, and reliability over its predecessor. On the basis of the original TO-247-3, TO-247-4 packaging products, Basic semiconductor also introduced the auxiliary source of TO-247-4-PLUS, To-263-7 and SOT-227 packaging of silicon carbide MOSFET devices, TO better meet customer needs.
The second generation of silicon carbide MOSFET through comprehensive optimization of chip design scheme, the on-resistance is reduced by about 40%, and the product performance is significantly improved. Qg is reduced by about 60% and switching loss is reduced by about 30%. The reverse transmission capacitance Crss is reduced, which improves the anti-interference ability of the device and reduces the risk of miscommunication under crosstalk behavior. And through higher standard HTGB, HTRB and H3TRB reliability assessment, the product reliability performance is excellent. The working junction temperature reaches 175°C, improving the high temperature working ability of the device.
