Alliance - New high-speed low-voltage 8Gb monolithic CMOS DDR3L SDRAM

Alliance Memory has introduced a new type of single-chip high-speed low-voltage CMOS dual-data-rate 3 synchronous DRAM (DDR3L SDRAM) with a density of 96 balls, 9mm x 14mm, and a lead-free (FB) package with a capacity of 8Gb. AS4C512M16D3L (512M x 16) adopts advanced silicon provided by Micron Technology, providing a double data rate architecture, which can achieve extremely high transmission rates up to 1600 Mbps / pin and 800MHz clock rate. With minimal die shrink, the single-die 8 Gb DDR3L SDRAM released today provides a reliable plug-in, pin-to-pin compatible alternative that can be used with many similar solutions, these solutions And for use in industrial, medical, medical, healthcare, healthcare, healthcare, healthcare, networking, telecommunications and aerospace applications – no need for costly redesigns and parts requalification. The company said that this 8 Gb DDR3 is a logical choice for users who need to add memory but face board space constraints. AS4C512M16D3L uses a single + 1.35-V power supply, with a commercial temperature range of 0C to + 95C (AS4C512M16D3L-12BCN) and an industrial temperature range of -40C to + 95C (AS4C512M16D3L-12BIN). The device is internally configured as eight 512M x 16-bit memory banks. DDR3L SDRAM provides fully synchronous operation and provides 4 or 8 programmable read or write burst lengths. The automatic precharge function provides a self-timed line precharge that starts at the end of the burst sequence. Easy-to-use refresh functions include auto-refresh or self-refresh, and the programmable mode register allows the system to select the most appropriate mode to maximize performance.