A switching frequency of up to 3MHz allows us to achieve a much greater power density

The chip has two 600V 120mΩ GaNHETS (high electron mobility transistors) and two freewheeling diodes. The diode is integrated with the transistor via a Schottky contact with a GaN HEMT (High Electron Mobility Transistor) structure. The compact design minimizes 240V / ns line impedance on and off. "The folded chip layout allows the DC bus capacitors to be tightly connected between the supply voltage and ground," Fraunhofer said. This design creates an optimized power path and allows clean, stable switching at high frequencies. In a 400MHz to 200V downconverter, the operation of the circuit is demonstrated at a switching frequency of 3MHz. Electric vehicle charging is the expected market. "For long batteries, long-range emissions are essential, and for light electric vehicles that produce as little energy as possible," Fraunhofer said. For example, in contrast to silicon carbide, gallium nitride grows. An effective wide-area silicon substrate is used as an epitaxial layer. When used in the production of electronic components for electric vehicles, GaN can more effectively achieve higher power densities.