Page 11 - Produits Vishay Siliconix

Référence	Fabricant	Description	paquet	Stock
SI1472DH-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 5.6A SC70-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc) Rds On (Max) @ Id, Vgs: 57 mOhm @ 4.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363	paquet: 6-TSSOP, SC-88, SOT-363	Stock2 256
IRFZ34L	Vishay Siliconix	MOSFET N-CH 60V 30A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	paquet: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2 896
SI7104DN-T1-E3	Vishay Siliconix	MOSFET N-CH 12V 35A PPAK 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 6V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 26.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	paquet: PowerPAK? 1212-8	Stock4 480
SIHP065N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 40A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	paquet: TO-220-3	Stock6 224
SIA427ADJ-T1-GE3	Vishay Siliconix	MOSFET P-CH 8V 12A 6SC-70 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 4V Vgs (Max): ±5V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 8.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SC-70-6 Single Package / Case: PowerPAK? SC-70-6	paquet: PowerPAK? SC-70-6	Stock7 936
SQM50P03-07_GE3	Vishay Siliconix	MOSFET P-CH 30V 50A TO263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5380pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TA) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock18 180
SIHP24N65E-E3	Vishay Siliconix	MOSFET N-CH 650V 24A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 145 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	paquet: TO-220-3	Stock23 016
SI4850EY-T1-GE3	Vishay Siliconix	MOSFET N-CH 60V 6A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	paquet: 8-SOIC (0.154", 3.90mm Width)	Stock14 820
IRFL214TRPBF	Vishay Siliconix	MOSFET N-CH 250V 790MA SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 790mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 470mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	paquet: TO-261-4, TO-261AA	Stock1 481 892
SI1031R-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 0.14A SC-75A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 140mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±6V FET Feature: - Power Dissipation (Max): 250mW (Ta) Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75A Package / Case: SC-75A	paquet: SC-75A	Stock545 088
SIA913ADJ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 12V 4.5A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 61 mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 6V Power - Max: 6.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	paquet: PowerPAK? SC-70-6 Dual	Stock3 192 612
SI9113DY-E3	Vishay Siliconix	IC CONTROLLER PWM/LDO 14SOIC Applications: Controller, ISDN Power Supplies Voltage - Input: 23.5 V ~ 200 V Number of Outputs: 1 Voltage - Output: Adj to 1.3V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	paquet: 14-SOIC (0.154", 3.90mm Width)	Stock4 240
SIP21106DT-46-E3	Vishay Siliconix	IC REG LIN 4.6V 150MA TSOT23-5 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 6V Voltage - Output (Min/Fixed): 4.6V Voltage - Output (Max): - Voltage Dropout (Max): 0.22V @ 150mA Current - Output: 150mA Current - Quiescent (Iq): - Current - Supply (Max): 85µA PSRR: 75dB ~ 40dB (1kHz ~ 100kHz) Control Features: Enable Protection Features: Over Temperature, Short Circuit Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SOT-23-5 Thin, TSOT-23-5 Supplier Device Package: TSOT-23-5	paquet: SOT-23-5 Thin, TSOT-23-5	Stock3 168
SIC413CB-T1-E3	Vishay Siliconix	IC REG BUCK ADJ 4A SYNC 8SOIC Function: Step-Down Output Configuration: Positive Topology: Buck Output Type: Adjustable Number of Outputs: 1 Voltage - Input (Min): 4.75V Voltage - Input (Max): 26V Voltage - Output (Min/Fixed): 0.6V Voltage - Output (Max): 13.2V Current - Output: 4A Frequency - Switching: 500kHz Synchronous Rectifier: Yes Operating Temperature: -25°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	paquet: 8-SOIC (0.154", 3.90mm Width)	Stock240 720
DG9431DV-T1	Vishay Siliconix	IC ANALOG SWITCH SPDT LV 6TSOP Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Circuits: 1 On-State Resistance (Max): 30 Ohm Channel-to-Channel Matching (ΔRon): 400 mOhm Voltage - Supply, Single (V+): 2.7 V ~ 5 V Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): 75ns, 50ns -3db Bandwidth: - Charge Injection: 2pC Channel Capacitance (CS(off), CD(off)): 7pF Current - Leakage (IS(off)) (Max): 100pA Crosstalk: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	paquet: SOT-23-6 Thin, TSOT-23-6	Stock47 520
DG304BDJ	Vishay Siliconix	IC SWITCH CMOS 14DIP Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 2 On-State Resistance (Max): 50 Ohm Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): - Voltage - Supply, Dual (V±): ±15V Switch Time (Ton, Toff) (Max): 110ns, 70ns (Typ) -3db Bandwidth: - Charge Injection: 30pC Channel Capacitance (CS(off), CD(off)): 14pF, 14pF Current - Leakage (IS(off)) (Max): 5nA Crosstalk: -74dB @ 500kHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: 14-PDIP	paquet: 14-DIP (0.300", 7.62mm)	Stock4 288
DG9233DQ-T1-E3	Vishay Siliconix	IC SWITCH DUAL SPST 8MSOP Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 2 On-State Resistance (Max): 30 Ohm Channel-to-Channel Matching (ΔRon): 400 mOhm Voltage - Supply, Single (V+): 2.7 V ~ 12 V Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): 75ns, 50ns -3db Bandwidth: - Charge Injection: 2pC Channel Capacitance (CS(off), CD(off)): 7pF, 13pF Current - Leakage (IS(off)) (Max): 100pA Crosstalk: -90dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	paquet: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock59 988
DG2034DN-T1-E4	Vishay Siliconix	IC MULTIPLEXER 4X1 12QFN Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Number of Circuits: 1 On-State Resistance (Max): 5.5 Ohm Channel-to-Channel Matching (ΔRon): 160 mOhm Voltage - Supply, Single (V+): 1.8 V ~ 5.5 V Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): 30ns, 20ns -3db Bandwidth: - Charge Injection: -4.4pC Channel Capacitance (CS(off), CD(off)): 13pF, 43pF Current - Leakage (IS(off)) (Max): 1nA Crosstalk: -77dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 12-VFQFN Exposed Pad Supplier Device Package: 12-QFN (3x3)	paquet: 12-VFQFN Exposed Pad	Stock7 808
DG2001DV-T1-E3	Vishay Siliconix	IC ANLG SWITCH SPDT LV 6TSOP Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Circuits: 1 On-State Resistance (Max): 7 Ohm Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): 1.8 V ~ 5.5 V Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): 20ns, 10ns -3db Bandwidth: - Charge Injection: 7pC Channel Capacitance (CS(off), CD(off)): 17pF Current - Leakage (IS(off)) (Max): 900pA Crosstalk: -70dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	paquet: SOT-23-6 Thin, TSOT-23-6	Stock4 576
DG2737DN-T1-E4	Vishay Siliconix	IC SWITCH 2XSPST 8 OHM 8MINIQFN Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Circuits: 1 On-State Resistance (Max): 8 Ohm Channel-to-Channel Matching (ΔRon): 100 mOhm Voltage - Supply, Single (V+): 2.3 V ~ 4.3 V Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): 60ns, 50ns -3db Bandwidth: 720MHz Charge Injection: 10.4pC Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF Current - Leakage (IS(off)) (Max): 10nA Crosstalk: -109dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 8-UFQFN Supplier Device Package: 8-miniQFN (1.4x1.4)	paquet: 8-UFQFN	Stock3 248
DG411LEDQ-T1-GE3	Vishay Siliconix	IC SWITCH QUAD SPST 16-TSSOP Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 4 On-State Resistance (Max): 26 Ohm Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): 3 V ~ 16 V Voltage - Supply, Dual (V±): ±3 V ~ 8 V Switch Time (Ton, Toff) (Max): 50ns, 30ns -3db Bandwidth: - Charge Injection: 6.6pC Channel Capacitance (CS(off), CD(off)): 5pF, 6pF Current - Leakage (IS(off)) (Max): 1nA Crosstalk: -114dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-TSSOP	paquet: 16-TSSOP (0.173", 4.40mm Width)	Stock6 032
SISH617DN-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 13.9A/35A PPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 12.3mOhm @ 13.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8SH Package / Case: PowerPAK® 1212-8SH	paquet: -	Stock51 588
SQJ500AEP-T1_BE3	Vishay Siliconix	MOSFET N/P-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 27mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38.3nC @ 10V, 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1843pF @ 20V, 1628pF @ 20V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8	paquet: -	Stock17 814
SIA456DJ-T3-GE3	Vishay Siliconix	MOSFET N-CH 200V 1.1A/2.6A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 2.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs: 1.38Ohm @ 750mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-70-6 Package / Case: PowerPAK® SC-70-6	paquet: -	Request a Quote
SQS462EN-T1_BE3	Vishay Siliconix	N-CHANNEL 60-V (D-S) 175C MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 4.3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8	paquet: -	Stock45 180
SIHD14N60ET1-GE3	Vishay Siliconix	N-CHANNEL 600V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 147W (Tc) Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	paquet: -	Stock4 932
SIHP35N60EF-GE3	Vishay Siliconix	MOSFET N-CH 600V 32A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 97mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	paquet: -	Stock2 850
SQJ868EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 40V 58A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 7.35mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	paquet: -	Request a Quote

SI1472DH-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 5.6A SC70-6

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc)
Rds On (Max) @ Id, Vgs: 57 mOhm @ 4.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363

paquet: 6-TSSOP, SC-88, SOT-363

Stock2 256

IRFZ34L

Vishay Siliconix

MOSFET N-CH 60V 30A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 50 mOhm @ 18A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

paquet: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2 896

SI7104DN-T1-E3

Vishay Siliconix

MOSFET N-CH 12V 35A PPAK 1212-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 6V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 26.1A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? 1212-8
Package / Case: PowerPAK? 1212-8

paquet: PowerPAK? 1212-8

Stock4 480

SIHP065N60E-GE3

Vishay Siliconix

MOSFET N-CH 600V 40A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 100V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 65 mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

paquet: TO-220-3

Stock6 224

SIA427ADJ-T1-GE3

Vishay Siliconix

MOSFET P-CH 8V 12A 6SC-70

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 4V
Vgs (Max): ±5V
FET Feature: -
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs: 16 mOhm @ 8.2A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? SC-70-6 Single
Package / Case: PowerPAK? SC-70-6

paquet: PowerPAK? SC-70-6

Stock7 936

SQM50P03-07_GE3

Vishay Siliconix

MOSFET P-CH 30V 50A TO263

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5380pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 7 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TA)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock18 180

SIHP24N65E-E3

Vishay Siliconix

MOSFET N-CH 650V 24A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 100V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 145 mOhm @ 12A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

paquet: TO-220-3

Stock23 016

SI4850EY-T1-GE3

Vishay Siliconix

MOSFET N-CH 60V 6A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.7W (Ta)
Rds On (Max) @ Id, Vgs: 22 mOhm @ 6A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

paquet: 8-SOIC (0.154", 3.90mm Width)

Stock14 820

IRFL214TRPBF

Vishay Siliconix

MOSFET N-CH 250V 790MA SOT223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 790mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Rds On (Max) @ Id, Vgs: 2 Ohm @ 470mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA

paquet: TO-261-4, TO-261AA

Stock1 481 892

SI1031R-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 0.14A SC-75A

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±6V
FET Feature: -
Power Dissipation (Max): 250mW (Ta)
Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-75A
Package / Case: SC-75A

paquet: SC-75A

Stock545 088

SIA913ADJ-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 12V 4.5A SC70-6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 61 mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 6V
Power - Max: 6.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

paquet: PowerPAK? SC-70-6 Dual

Stock3 192 612

SI9113DY-E3

Vishay Siliconix

IC CONTROLLER PWM/LDO 14SOIC

Applications: Controller, ISDN Power Supplies
Voltage - Input: 23.5 V ~ 200 V
Number of Outputs: 1
Voltage - Output: Adj to 1.3V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SOIC

paquet: 14-SOIC (0.154", 3.90mm Width)

Stock4 240

SIP21106DT-46-E3

Vishay Siliconix

IC REG LIN 4.6V 150MA TSOT23-5

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 6V
Voltage - Output (Min/Fixed): 4.6V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.22V @ 150mA
Current - Output: 150mA
Current - Quiescent (Iq): -
Current - Supply (Max): 85µA
PSRR: 75dB ~ 40dB (1kHz ~ 100kHz)
Control Features: Enable
Protection Features: Over Temperature, Short Circuit
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Supplier Device Package: TSOT-23-5

paquet: SOT-23-5 Thin, TSOT-23-5

Stock3 168

SIC413CB-T1-E3

Vishay Siliconix

IC REG BUCK ADJ 4A SYNC 8SOIC

Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 4.75V
Voltage - Input (Max): 26V
Voltage - Output (Min/Fixed): 0.6V
Voltage - Output (Max): 13.2V
Current - Output: 4A
Frequency - Switching: 500kHz
Synchronous Rectifier: Yes
Operating Temperature: -25°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

paquet: 8-SOIC (0.154", 3.90mm Width)

Stock240 720

DG9431DV-T1

Vishay Siliconix

IC ANALOG SWITCH SPDT LV 6TSOP

Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 1
On-State Resistance (Max): 30 Ohm
Channel-to-Channel Matching (ΔRon): 400 mOhm
Voltage - Supply, Single (V+): 2.7 V ~ 5 V
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): 75ns, 50ns
-3db Bandwidth: -
Charge Injection: 2pC
Channel Capacitance (CS(off), CD(off)): 7pF
Current - Leakage (IS(off)) (Max): 100pA
Crosstalk: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

paquet: SOT-23-6 Thin, TSOT-23-6

Stock47 520

DG304BDJ

Vishay Siliconix

IC SWITCH CMOS 14DIP

Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 2
On-State Resistance (Max): 50 Ohm
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): -
Voltage - Supply, Dual (V±): ±15V
Switch Time (Ton, Toff) (Max): 110ns, 70ns (Typ)
-3db Bandwidth: -
Charge Injection: 30pC
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Current - Leakage (IS(off)) (Max): 5nA
Crosstalk: -74dB @ 500kHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: 14-PDIP

paquet: 14-DIP (0.300", 7.62mm)

Stock4 288

DG9233DQ-T1-E3

Vishay Siliconix

IC SWITCH DUAL SPST 8MSOP

Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 2
On-State Resistance (Max): 30 Ohm
Channel-to-Channel Matching (ΔRon): 400 mOhm
Voltage - Supply, Single (V+): 2.7 V ~ 12 V
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): 75ns, 50ns
-3db Bandwidth: -
Charge Injection: 2pC
Channel Capacitance (CS(off), CD(off)): 7pF, 13pF
Current - Leakage (IS(off)) (Max): 100pA
Crosstalk: -90dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

paquet: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Stock59 988

DG2034DN-T1-E4

Vishay Siliconix

IC MULTIPLEXER 4X1 12QFN

Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Number of Circuits: 1
On-State Resistance (Max): 5.5 Ohm
Channel-to-Channel Matching (ΔRon): 160 mOhm
Voltage - Supply, Single (V+): 1.8 V ~ 5.5 V
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): 30ns, 20ns
-3db Bandwidth: -
Charge Injection: -4.4pC
Channel Capacitance (CS(off), CD(off)): 13pF, 43pF
Current - Leakage (IS(off)) (Max): 1nA
Crosstalk: -77dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 12-VFQFN Exposed Pad
Supplier Device Package: 12-QFN (3x3)

paquet: 12-VFQFN Exposed Pad

Stock7 808

DG2001DV-T1-E3

Vishay Siliconix

IC ANLG SWITCH SPDT LV 6TSOP

Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 1
On-State Resistance (Max): 7 Ohm
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): 1.8 V ~ 5.5 V
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): 20ns, 10ns
-3db Bandwidth: -
Charge Injection: 7pC
Channel Capacitance (CS(off), CD(off)): 17pF
Current - Leakage (IS(off)) (Max): 900pA
Crosstalk: -70dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

paquet: SOT-23-6 Thin, TSOT-23-6

Stock4 576

DG2737DN-T1-E4

Vishay Siliconix

IC SWITCH 2XSPST 8 OHM 8MINIQFN

Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 1
On-State Resistance (Max): 8 Ohm
Channel-to-Channel Matching (ΔRon): 100 mOhm
Voltage - Supply, Single (V+): 2.3 V ~ 4.3 V
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): 60ns, 50ns
-3db Bandwidth: 720MHz
Charge Injection: 10.4pC
Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
Current - Leakage (IS(off)) (Max): 10nA
Crosstalk: -109dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 8-UFQFN
Supplier Device Package: 8-miniQFN (1.4x1.4)

paquet: 8-UFQFN

Stock3 248

DG411LEDQ-T1-GE3

Vishay Siliconix

IC SWITCH QUAD SPST 16-TSSOP

Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 26 Ohm
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): 3 V ~ 16 V
Voltage - Supply, Dual (V±): ±3 V ~ 8 V
Switch Time (Ton, Toff) (Max): 50ns, 30ns
-3db Bandwidth: -
Charge Injection: 6.6pC
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Crosstalk: -114dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOP

paquet: 16-TSSOP (0.173", 4.40mm Width)

Stock6 032

SISH617DN-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 13.9A/35A PPAK

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 13.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8SH
Package / Case: PowerPAK® 1212-8SH

paquet: -

Stock51 588

SQJ500AEP-T1_BE3

Vishay Siliconix

MOSFET N/P-CH 40V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 27mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38.3nC @ 10V, 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1843pF @ 20V, 1628pF @ 20V
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8

paquet: -

Stock17 814

SIA456DJ-T3-GE3

Vishay Siliconix

MOSFET N-CH 200V 1.1A/2.6A PPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 750mA, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6
Package / Case: PowerPAK® SC-70-6

paquet: -

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SQS462EN-T1_BE3

Vishay Siliconix

N-CHANNEL 60-V (D-S) 175C MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.3A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8

paquet: -

Stock45 180

SIHD14N60ET1-GE3

Vishay Siliconix

N-CHANNEL 600V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 147W (Tc)
Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

paquet: -

Stock4 932

SIHP35N60EF-GE3

Vishay Siliconix

MOSFET N-CH 600V 32A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 100 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 97mOhm @ 17A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

paquet: -

Stock2 850

SQJ868EP-T1_GE3

Vishay Siliconix

MOSFET N-CH 40V 58A PPAK SO-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 7.35mOhm @ 14A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8

paquet: -

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