Page 364 - Produits Vishay Semiconductor Diodes Division - Diodes - Redresseurs - Simples

Référence	Fabricant	Description	paquet	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N4005GPE-M3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURPOSE DO-204AL Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	paquet: -	Stock3 296	-	-	-	-	-	-	-	-	-	-	-
1N4003GPE-M3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURPOSE DO-204AL Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	paquet: -	Stock5 552	-	-	-	-	-	-	-	-	-	-	-
1N4002GPE-M3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURPOSE DO-204AL Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	paquet: -	Stock3 152	-	-	-	-	-	-	-	-	-	-	-
1N4001GPE-M3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURPOSE DO-204AL Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	paquet: -	Stock5 872	-	-	-	-	-	-	-	-	-	-	-
1N3957GP-M3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURPOSE DO-204AL Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	paquet: -	Stock5 680	-	-	-	-	-	-	-	-	-	-	-
1N3614GP-M3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURPOSE DO-204AL Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	paquet: -	Stock6 320	-	-	-	-	-	-	-	-	-	-	-
1N3613GP-M3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURPOSE DO-204AL Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	paquet: -	Stock6 560	-	-	-	-	-	-	-	-	-	-	-
1N3612GP-M3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURPOSE DO-204AL Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	paquet: -	Stock7 936	-	-	-	-	-	-	-	-	-	-	-
SBLB10L25HE3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 25V 10A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 25V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 460mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 800µA @ 25V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 150°C	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3 392	25V	10A	460mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	800µA @ 25V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 150°C
MBRB16H45HE3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 16A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 660mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 175°C	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5 536	45V	16A	660mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 45V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 175°C
MBRB16H35HE3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 16A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 660mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 35V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 175°C	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6 480	35V	16A	660mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 35V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 175°C
MBRB10H90HE3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 90V 10A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 770mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4.5µA @ 90V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 175°C	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3 696	90V	10A	770mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	4.5µA @ 90V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 175°C
MBRB10H90CTHE3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 90V 5A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 760mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3.5µA @ 90V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 175°C	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5 040	90V	5A	760mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	3.5µA @ 90V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 175°C
MBRB10H90HE3/81	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 90V 10A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 770mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4.5µA @ 90V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 175°C	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6 576	90V	10A	770mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	4.5µA @ 90V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 175°C
MBRB10H90CTHE3/81	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 90V 5A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 760mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3.5µA @ 90V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 175°C	paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2 752	90V	5A	760mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	3.5µA @ 90V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 175°C
MBRB1045-001HE3/81	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 10A 45V TO263AB Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	paquet: -	Stock3 424	-	-	-	-	-	-	-	-	-	-	-
MB30H45C-61HE3J/81	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30A 45V TO263AB Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	paquet: -	Stock5 648	-	-	-	-	-	-	-	-	-	-	-
MB2045C-61HE3J/81	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20A 45V TO263AB Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	paquet: -	Stock3 200	-	-	-	-	-	-	-	-	-	-	-
VS-8EWS10STRRPBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 8A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: -55°C ~ 150°C	paquet: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6 976	1000V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 1000V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252	-55°C ~ 150°C
VS-8EWS10STRPBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 8A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: -55°C ~ 150°C	paquet: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2 400	1000V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 1000V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252	-55°C ~ 150°C
V12P12-5300M3/86A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 120V 12A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 800mV @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 120V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	paquet: TO-277, 3-PowerDFN	Stock6 368	120V	12A	800mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 120V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
V12P12-5001M3/87A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 120V 12A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 800mV @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 120V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	paquet: TO-277, 3-PowerDFN	Stock4 448	120V	12A	800mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 120V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
V12P12-5001M3/86A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 120V 12A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 800mV @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 120V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	paquet: TO-277, 3-PowerDFN	Stock2 960	120V	12A	800mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 120V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
SB050-E3/73	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V DO-201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 600mA Voltage - Forward (Vf) (Max) @ If: 700mV @ 600mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	paquet: DO-201AD, Axial	Stock4 720	50V	600mA	700mV @ 600mA	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 50V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
SB030-E3/73	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V DO-201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 480mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	paquet: DO-201AD, Axial	Stock4 112	30V	5A	480mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
MBR10H100-E3/4W	Vishay Semiconductor Diodes Division	DIODE SCHTKY SGL 100V 10A TO220 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 770mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4.5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C	paquet: TO-220-2	Stock7 552	100V	10A	770mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	4.5µA @ 100V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 175°C
BYV95-2-EBT1133TAP	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 700V SOD57 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	paquet: -	Stock2 544	-	-	-	-	-	-	-	-	-	-	-
BAV103-IR08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 250MA SOD80 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 200V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 175°C (Max)	paquet: DO-213AC, MINI-MELF, SOD-80	Stock7 120	200V	250mA (DC)	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 200V	1.5pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80 MiniMELF	175°C (Max)

1N4005GPE-M3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO-204AL

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

paquet: -

Stock3 296

-

1N4003GPE-M3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO-204AL

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

paquet: -

Stock5 552

-

1N4002GPE-M3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO-204AL

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

paquet: -

Stock3 152

-

1N4001GPE-M3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO-204AL

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

paquet: -

Stock5 872

-

1N3957GP-M3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO-204AL

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

paquet: -

Stock5 680

-

1N3614GP-M3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO-204AL

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

paquet: -

Stock6 320

-

1N3613GP-M3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO-204AL

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

paquet: -

Stock6 560

-

1N3612GP-M3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO-204AL

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

paquet: -

Stock7 936

-

SBLB10L25HE3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 25V 10A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 25V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 460mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 800µA @ 25V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3 392

25V

10A

460mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

800µA @ 25V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 150°C

MBRB16H45HE3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 16A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 660mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5 536

45V

16A

660mV @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 45V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 175°C

MBRB16H35HE3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 16A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 660mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6 480

35V

16A

660mV @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 35V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 175°C

MBRB10H90HE3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 10A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 770mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4.5µA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3 696

90V

10A

770mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

4.5µA @ 90V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 175°C

MBRB10H90CTHE3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 5A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 760mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3.5µA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5 040

90V

5A

760mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

3.5µA @ 90V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 175°C

MBRB10H90HE3/81

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 10A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 770mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4.5µA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6 576

90V

10A

770mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

4.5µA @ 90V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 175°C

MBRB10H90CTHE3/81

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 5A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 760mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3.5µA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C

paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2 752

90V

5A

760mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

3.5µA @ 90V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 175°C

MBRB1045-001HE3/81

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 10A 45V TO263AB

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

paquet: -

Stock3 424

-

MB30H45C-61HE3J/81

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30A 45V TO263AB

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

paquet: -

Stock5 648

-

MB2045C-61HE3J/81

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20A 45V TO263AB

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

paquet: -

Stock3 200

-

VS-8EWS10STRRPBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 8A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 150°C

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6 976

1000V

8A

1.1V @ 8A

Standard Recovery >500ns, > 200mA (Io)

-

50µA @ 1000V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252

-55°C ~ 150°C

VS-8EWS10STRPBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 8A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 150°C

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2 400

1000V

8A

1.1V @ 8A

Standard Recovery >500ns, > 200mA (Io)

-

50µA @ 1000V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252

-55°C ~ 150°C

V12P12-5300M3/86A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 12A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 120V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C

paquet: TO-277, 3-PowerDFN

Stock6 368

120V

12A

800mV @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 120V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 150°C

V12P12-5001M3/87A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 12A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 120V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C

paquet: TO-277, 3-PowerDFN

Stock4 448

120V

12A

800mV @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 120V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 150°C

V12P12-5001M3/86A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 12A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 120V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C

paquet: TO-277, 3-PowerDFN

Stock2 960

120V

12A

800mV @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 120V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 150°C

SB050-E3/73

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V DO-201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 600mA
Voltage - Forward (Vf) (Max) @ If: 700mV @ 600mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

paquet: DO-201AD, Axial

Stock4 720

50V

600mA

700mV @ 600mA

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 50V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

SB030-E3/73

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V DO-201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 480mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

paquet: DO-201AD, Axial

Stock4 112

30V

5A

480mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

MBR10H100-E3/4W

Vishay Semiconductor Diodes Division

DIODE SCHTKY SGL 100V 10A TO220

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 770mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4.5µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C

paquet: TO-220-2

Stock7 552

100V

10A

770mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

4.5µA @ 100V

-

Through Hole

TO-220-2

TO-220AC

-65°C ~ 175°C

BYV95-2-EBT1133TAP

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 700V SOD57

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

paquet: -

Stock2 544

-

BAV103-IR08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 250MA SOD80

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 200V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)

paquet: DO-213AC, MINI-MELF, SOD-80

Stock7 120

200V

250mA (DC)

1V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

50ns

100nA @ 200V

1.5pF @ 0V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

SOD-80 MiniMELF

175°C (Max)