Produits Toshiba Semiconductor and Storage - Transistors - JFET | Heisener Electronics
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Produits Toshiba Semiconductor and Storage - Transistors - JFET

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Fabricant
Description
paquet
Stock
Quantité
Voltage - Breakdown (V(BR)GSS)
Drain to Source Voltage (Vdss)
Current - Drain (Idss) @ Vds (Vgs=0)
Current Drain (Id) - Max
Voltage - Cutoff (VGS off) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Resistance - RDS(On)
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2SK208-O(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET N-CH S-MINI FET

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 600µA @ 10V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
  • Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
paquet: TO-236-3, SC-59, SOT-23-3
Stock3 104
-
-
600µA @ 10V
-
400mV @ 100nA
8.2pF @ 10V
-
100mW
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SC-59
2SK3320-BL(TE85L,F
Toshiba Semiconductor and Storage

JFET DUAL N-CH USV

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 200mV @ 100nA
  • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 200mW
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: USV
paquet: 5-TSSOP, SC-70-5, SOT-353
Stock4 000
-
-
6mA @ 10V
-
200mV @ 100nA
13pF @ 10V
-
200mW
125°C (TJ)
Surface Mount
5-TSSOP, SC-70-5, SOT-353
USV
2SK208-R(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET N-CH 50V S-MINI

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 300µA @ 10V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
  • Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
paquet: TO-236-3, SC-59, SOT-23-3
Stock6 432
-
-
300µA @ 10V
-
400mV @ 100nA
8.2pF @ 10V
-
100mW
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
2SK879-GR(TE85L,F)
Toshiba Semiconductor and Storage

JFET N-CH 0.1W USM

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
  • Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
paquet: SC-70, SOT-323
Stock5 024
-
-
2.6mA @ 10V
-
400mV @ 100nA
8.2pF @ 10V
-
100mW
125°C (TJ)
Surface Mount
SC-70, SOT-323
USM
2SK2145-Y(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET 2N-CH JFET 50V SMV

  • FET Type: 2 N-Channel (Dual)
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 200mV @ 100nA
  • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 300mW
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
paquet: SC-74A, SOT-753
Stock26 616
-
-
1.2mA @ 10V
-
200mV @ 100nA
13pF @ 10V
-
300mW
125°C (TJ)
Surface Mount
SC-74A, SOT-753
SMV
2SK2145-GR(TE85L,F
Toshiba Semiconductor and Storage

MOSFET 2N-CH JFET 50V SMV

  • FET Type: 2 N-Channel (Dual)
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 200mV @ 100nA
  • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 300mW
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
paquet: SC-74A, SOT-753
Stock5 040
-
-
2.6mA @ 10V
-
200mV @ 100nA
13pF @ 10V
-
300mW
125°C (TJ)
Surface Mount
SC-74A, SOT-753
SMV
2SK2145-BL(TE85L,F
Toshiba Semiconductor and Storage

JFET N-CH 50V SMV

  • FET Type: 2 N-Channel (Dual)
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 200mV @ 100nA
  • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 300mW
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
paquet: SC-74A, SOT-753
Stock148 380
-
-
6mA @ 10V
-
200mV @ 100nA
13pF @ 10V
-
300mW
125°C (TJ)
Surface Mount
SC-74A, SOT-753
SMV
2SK880-BL(TE85L,F)
Toshiba Semiconductor and Storage

JFET N-CH 50V 0.1W USM

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 50V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1.5V @ 100nA
  • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
paquet: SC-70, SOT-323
Stock25 356
50V
-
6mA @ 10V
-
1.5V @ 100nA
13pF @ 10V
-
100mW
125°C (TJ)
Surface Mount
SC-70, SOT-323
SC-70
2SK880GRTE85LF
Toshiba Semiconductor and Storage

JFET N-CH 50V 0.1W USM

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 50V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1.5V @ 100nA
  • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
paquet: SC-70, SOT-323
Stock50 250
50V
-
2.6mA @ 10V
-
1.5V @ 100nA
13pF @ 10V
-
100mW
125°C (TJ)
Surface Mount
SC-70, SOT-323
SC-70
2SK880-Y(TE85L,F)
Toshiba Semiconductor and Storage

JFET N-CH 50V 0.1W USM

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 50V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1.5V @ 100nA
  • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
paquet: SC-70, SOT-323
Stock689 706
50V
-
1.2mA @ 10V
-
1.5V @ 100nA
13pF @ 10V
-
100mW
125°C (TJ)
Surface Mount
SC-70, SOT-323
USM
2SK879-Y(TE85L,F)
Toshiba Semiconductor and Storage

JFET N-CH 0.1W USM

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
  • Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
paquet: SC-70, SOT-323
Stock25 206
-
-
1.2mA @ 10V
-
400mV @ 100nA
8.2pF @ 10V
-
100mW
125°C (TJ)
Surface Mount
SC-70, SOT-323
USM
2SK208-Y(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET N-CH 50V S-MINI

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
  • Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
paquet: TO-236-3, SC-59, SOT-23-3
Stock22 500
-
-
1.2mA @ 10V
-
400mV @ 100nA
8.2pF @ 10V
-
100mW
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
2SK208-GR(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET N-CH S-MINI FET

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
  • Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
paquet: TO-236-3, SC-59, SOT-23-3
Stock22 878
-
-
2.6mA @ 10V
-
400mV @ 100nA
8.2pF @ 10V
-
100mW
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SC-59