Produits Taiwan Semiconductor Corporation

BZD27C15P MHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 15V, 1000MW, %, SU

• Voltage - Zener (Nom) (Vz): 14.7V
• Tolerance: ±6.12%
• Power - Max: 1W
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 11V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

paquet: DO-219AB

BZD17C75P R3G

Taiwan Semiconductor Corporation

DIODE, ZENER, 75V, 800MW, %, SUB

• Voltage - Zener (Nom) (Vz): 75V
• Tolerance: ±6%
• Power - Max: 800mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 56V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

paquet: DO-219AB

1SMB5927HM4G

Taiwan Semiconductor Corporation

DIODE, ZENER, 12V, 3000MW, 5%, A

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±5%
• Power - Max: 3W
• Impedance (Max) (Zzt): 6.5 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 9.1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

paquet: DO-214AA, SMB

1N4755A A0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 43V, 1000MW, 5%, D

• Voltage - Zener (Nom) (Vz): 43V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 70 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 32.7V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

paquet: DO-204AL, DO-41, Axial

1N4750AHR0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 27V, 1000MW, 5%, A

• Voltage - Zener (Nom) (Vz): 27V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 35 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 20.6V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

paquet: DO-204AL, DO-41, Axial

1SMA4764HM2G

Taiwan Semiconductor Corporation

DIODE, ZENER, 100V, 1000MW, %, A

• Voltage - Zener (Nom) (Vz): 100V
• Tolerance: ±5%
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 350 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 76V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

paquet: DO-214AC, SMA

BZX585B51 RKG

Taiwan Semiconductor Corporation

DIODE, ZENER, 51V, 200MW, 2%, SO

• Voltage - Zener (Nom) (Vz): 51V
• Tolerance: ±2%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 180 Ohms
• Current - Reverse Leakage @ Vr: 45nA @ 35.7V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523F

paquet: SC-79, SOD-523

UDZS4V3B RRG

Taiwan Semiconductor Corporation

DIODE, ZENER, 4.3V, 200MW, 2%, S

• Voltage - Zener (Nom) (Vz): 4.3V
• Tolerance: ±2%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 2.7µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

paquet: SC-90, SOD-323F

BZY55B5V6 RYG

Taiwan Semiconductor Corporation

DIODE, ZENER, 5.6V, 500MW, 2%, 0

• Voltage - Zener (Nom) (Vz): 5.6V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805

paquet: 0805 (2012 Metric)

MTZJ39SE R0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 38.33V, 500MW, %,

• Voltage - Zener (Nom) (Vz): 38.33V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 85 Ohms
• Current - Reverse Leakage @ Vr: 200nA @ 30V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AG, DO-34, Axial
• Supplier Device Package: DO-34

paquet: DO-204AG, DO-34, Axial

MTZJ7V5A R0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 7.04V, 500MW, 2.7%

• Voltage - Zener (Nom) (Vz): 7.04V
• Tolerance: ±2.7%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 4V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AG, DO-34, Axial
• Supplier Device Package: DO-34

paquet: DO-204AG, DO-34, Axial

TS50P06G C2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 50A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800V
• Current - Average Rectified (Io): 50A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
• Current - Reverse Leakage @ Vr: 10µA @ 800V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS-6P
• Supplier Device Package: TS-6P

paquet: 4-SIP, TS-6P

TS50P05G C2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 50A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 50A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS-6P
• Supplier Device Package: TS-6P

paquet: 4-SIP, TS-6P

TS9015CX5 RFG

Taiwan Semiconductor Corporation

IC REG LINEAR 300MA

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

paquet: -

ES3J-R6

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 3A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Capacitance @ Vr, F: 30pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

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SK52C-V6G

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 20V 5A DO214AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 20 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

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S1DLW

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 1A SOD123W

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 µA @ 200 V
• Capacitance @ Vr, F: 8pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD-123W
• Operating Temperature - Junction: -55°C ~ 175°C

paquet: -

1SMA5949H

Taiwan Semiconductor Corporation

DIODE ZENER 100V 1.5W DO214AC

• Voltage - Zener (Nom) (Vz): 100 V
• Tolerance: ±5%
• Power - Max: 1.5 W
• Impedance (Max) (Zzt): 250 Ohms
• Current - Reverse Leakage @ Vr: 500 nA @ 76 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

paquet: -

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ZM4738A

Taiwan Semiconductor Corporation

MELF, 1000MW, 5%, SMALL SIGNAL Z

• Voltage - Zener (Nom) (Vz): 8.2 V
• Tolerance: ±5%
• Power - Max: 1 W
• Impedance (Max) (Zzt): 4.5 Ohms
• Current - Reverse Leakage @ Vr: 10 µA @ 6 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: MELF

paquet: -

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TUAS4DH

Taiwan Semiconductor Corporation

4A, 200V, STANDARD RECOVERY RECT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 200 V
• Capacitance @ Vr, F: 33pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: SMPC4.6U
• Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

GBU607

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 6A GBU

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1 kV
• Current - Average Rectified (Io): 6 A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
• Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBU
• Supplier Device Package: GBU

paquet: -

RS1DF-T

Taiwan Semiconductor Corporation

150NS, 1A, 200V, FAST RECOVERY R

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 200 V
• Capacitance @ Vr, F: 9pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: SMAF
• Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

BZT55C4V3

Taiwan Semiconductor Corporation

QMMELF, 500MW, 5%, SMALL SIGNAL

• Voltage - Zener (Nom) (Vz): 4.3 V
• Tolerance: ±5%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 75 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-80 Variant
• Supplier Device Package: QMMELF

paquet: -

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TSZU52C3V3

Taiwan Semiconductor Corporation

603, 150MW, 5%, SMALL SIGNAL ZEN

• Voltage - Zener (Nom) (Vz): 3.3 V
• Tolerance: ±5%
• Power - Max: 150 mW
• Impedance (Max) (Zzt): 95 Ohms
• Current - Reverse Leakage @ Vr: 25 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -55°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603

paquet: -

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TS358CS

Taiwan Semiconductor Corporation

DUAL OPERATING AMPLIFIER

• Amplifier Type: General Purpose
• Number of Circuits: 2
• Output Type: Single-Ended
• Slew Rate: 0.4V/µs
• Gain Bandwidth Product: 1 MHz
• -3db Bandwidth: -
• Current - Input Bias: 45 nA
• Voltage - Input Offset: 2 mV
• Current - Supply: 1.5mA
• Current - Output / Channel: 40 mA
• Voltage - Supply, Single/Dual (±): -
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

paquet: -

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S1GFSH

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1A SOD128

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 µA @ 400 V
• Capacitance @ Vr, F: 9pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: SOD-128
• Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

HER208G

Taiwan Semiconductor Corporation

DIODE GEN PURP 2A DO204AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)
• Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

S4B-R6

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 4A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 4 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.5 µs
• Current - Reverse Leakage @ Vr: 10 µA @ 100 V
• Capacitance @ Vr, F: 60pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

paquet: -

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