Page 19 - Produits Taiwan Semiconductor Corporation

Référence	Fabricant	Description	paquet	Stock
BZD27C27PHM2G	Taiwan Semiconductor Corporation	DIODE, ZENER, 27V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 27V Tolerance: ±7.03% Power - Max: 1W Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 20V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	paquet: DO-219AB	Stock7 152
TSZL52C11 RWG	Taiwan Semiconductor Corporation	DIODE, ZENER, 11V, 200MW, 5%, 10 Voltage - Zener (Nom) (Vz): 11V Tolerance: ±5% Power - Max: 200mW Impedance (Max) (Zzt): 20 Ohms Current - Reverse Leakage @ Vr: 100nA @ 8.5V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 1005 (2512 Metric) Supplier Device Package: 1005	paquet: 1005 (2512 Metric)	Stock3 536
TSZU52C5V6 RGG	Taiwan Semiconductor Corporation	DIODE, ZENER, 5.6V, 150MW, 5%, 0 Voltage - Zener (Nom) (Vz): 5.6V Tolerance: ±5% Power - Max: 150mW Impedance (Max) (Zzt): 40 Ohms Current - Reverse Leakage @ Vr: 100nA @ 1V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Supplier Device Package: 0603	paquet: 0201 (0603 Metric)	Stock3 872
BZV55B8V2 L1G	Taiwan Semiconductor Corporation	DIODE, ZENER, 8.2V, 500MW, 2%, M Voltage - Zener (Nom) (Vz): 8.2V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 7 Ohms Current - Reverse Leakage @ Vr: 100nA @ 6.2V Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: Mini MELF	paquet: DO-213AC, MINI-MELF, SOD-80	Stock4 112
MTZJ5V6SC R0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 5.76V, 500MW, %, D Voltage - Zener (Nom) (Vz): 5.76V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 60 Ohms Current - Reverse Leakage @ Vr: 5µA @ 2.5V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AG, DO-34, Axial Supplier Device Package: DO-34	paquet: DO-204AG, DO-34, Axial	Stock4 080
BZV55C13 L1G	Taiwan Semiconductor Corporation	DIODE, ZENER, 13V, 500MW, 5%, MM Voltage - Zener (Nom) (Vz): 13V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 26 Ohms Current - Reverse Leakage @ Vr: 100nA @ 10V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: Mini MELF	paquet: DO-213AC, MINI-MELF, SOD-80	Stock4 752
TS25P01G D2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 25A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A Current - Reverse Leakage @ Vr: 10µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	paquet: 4-SIP, TS-6P	Stock3 232
DBL158GHC1G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 1.5A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A Current - Reverse Leakage @ Vr: 2µA @ 1200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: DBL	paquet: 4-DIP (0.300", 7.62mm)	Stock4 016
ABS15MHREG	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 1.5A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A Current - Reverse Leakage @ Vr: 5µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: ABS	paquet: 4-SMD, Gull Wing	Stock7 312
ABS15J REG	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 1.5A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: ABS	paquet: 4-SMD, Gull Wing	Stock3 728
TS4264CW50 RPG	Taiwan Semiconductor Corporation	IC REG LINEAR 5V 150MA Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 150mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: - Package / Case: - Supplier Device Package: -	paquet: -	Stock3 968
TS2938CS33 RLG	Taiwan Semiconductor Corporation	IC REG LINEAR 3.3V 500MA Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 500mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: - Package / Case: - Supplier Device Package: -	paquet: -	Stock7 312
SF2008PTH	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 20A TO247AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 175pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (TO-3P) Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock2 700
TSSD20L60SW	Taiwan Semiconductor Corporation	20A, 60V, TRENCH SCHOTTKY Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 60 V Capacitance @ Vr, F: 2500pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Request a Quote
BZS55C15-RAG	Taiwan Semiconductor Corporation	DIODE ZENER 15V 500MW 1206 Voltage - Zener (Nom) (Vz): 15 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 11 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 1206 (3216 Metric) Supplier Device Package: 1206	paquet: -	Request a Quote
BZD27C120P	Taiwan Semiconductor Corporation	SUB SMA, 1000MW, 6%, ZENER DIODE Voltage - Zener (Nom) (Vz): 120.5 V Tolerance: ±5.39% Power - Max: 1 W Impedance (Max) (Zzt): 300 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 91 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: Sub SMA	paquet: -	Request a Quote
ES1GFS	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SOD128 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 16pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock19 734
TSM680P06CI-C0G	Taiwan Semiconductor Corporation	MOSFET P-CH 60V 18A ITO220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 17W (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220 Package / Case: TO-220-3 Full Pack, Isolated Tab	paquet: -	Request a Quote
PU2BAH	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 2A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 2 µA @ 100 V Capacitance @ Vr, F: 33pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C	paquet: -	Stock29 328
BZT52C12K	Taiwan Semiconductor Corporation	SOD-523F, 200MW, 5%, SMALL SIGNA Voltage - Zener (Nom) (Vz): 12 V Tolerance: ±5% Power - Max: 200 mW Impedance (Max) (Zzt): 25 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 9 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523F	paquet: -	Request a Quote
KBP307G-C2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 3A KBP Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBP Supplier Device Package: KBP	paquet: -	Request a Quote
LL5818-L0	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A MELF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 30 V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF Operating Temperature - Junction: -65°C ~ 125°C	paquet: -	Request a Quote
D2SB60	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 600V 2A GBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBL Supplier Device Package: GBL	paquet: -	Stock2 967
1PGSMA4750HR3G	Taiwan Semiconductor Corporation	DIODE ZENER 27V 1.25W DO214AC Voltage - Zener (Nom) (Vz): 27 V Tolerance: ±5% Power - Max: 1.25 W Impedance (Max) (Zzt): 35 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 20.6 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	paquet: -	Stock1 920
SFS1608GH	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 16A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock4 740
SMLWH	Taiwan Semiconductor Corporation	0.8A, 1000V, STANDARD RECOVERY R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock60 000
SK14BH	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C	paquet: -	Request a Quote
TS4K80-A	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 800V 4A TS4K Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS4K Supplier Device Package: TS4K	paquet: -	Stock5 937