Page 15 - Produits Taiwan Semiconductor Corporation

Référence	Fabricant	Description	paquet	Stock
2M47Z B0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 47V, 2000MW, %, DO Voltage - Zener (Nom) (Vz): 47V Tolerance: ±5% Power - Max: 2W Impedance (Max) (Zzt): 40 Ohms Current - Reverse Leakage @ Vr: 500nA @ 35.8V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15)	paquet: DO-204AC, DO-15, Axial	Stock5 600
BZD27C18PHRFG	Taiwan Semiconductor Corporation	DIODE, ZENER, 18V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 17.95V Tolerance: ±6.4% Power - Max: 1W Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 13V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	paquet: DO-219AB	Stock3 008
1SMB5956HR5G	Taiwan Semiconductor Corporation	DIODE, ZENER, 200V, 3000MW, 5%, Voltage - Zener (Nom) (Vz): 200V Tolerance: ±5% Power - Max: 3W Impedance (Max) (Zzt): 1200 Ohms Current - Reverse Leakage @ Vr: 1µA @ 152V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB)	paquet: DO-214AA, SMB	Stock2 784
1N4758AHR0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 56V, 1000MW, 5%, A Voltage - Zener (Nom) (Vz): 56V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 110 Ohms Current - Reverse Leakage @ Vr: 5µA @ 42.6V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	paquet: DO-204AL, DO-41, Axial	Stock2 608
BZD17C68P MQG	Taiwan Semiconductor Corporation	DIODE, ZENER, 68V, 800MW, %, SUB Voltage - Zener (Nom) (Vz): 68V Tolerance: ±5.88% Power - Max: 800mW Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 1µA @ 51V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	paquet: DO-219AB	Stock3 344
BZT52C6V8K RKG	Taiwan Semiconductor Corporation	DIODE, ZENER, 6.8V, 200MW, 5%, S Voltage - Zener (Nom) (Vz): 6.8V Tolerance: ±5% Power - Max: 200mW Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 500nA @ 3.5V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523F	paquet: SC-79, SOD-523	Stock6 400
BZX55B22 A0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 22V, 500MW, 2%, DO Voltage - Zener (Nom) (Vz): 22V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 55 Ohms Current - Reverse Leakage @ Vr: 100nA @ 17V Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35	paquet: DO-204AH, DO-35, Axial	Stock6 112
BZV55B5V1 L0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 5.1V, 500MW, 2%, M Voltage - Zener (Nom) (Vz): 5.1V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 35 Ohms Current - Reverse Leakage @ Vr: 100nA @ 1V Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: Mini MELF	paquet: DO-213AC, MINI-MELF, SOD-80	Stock3 936
TS2937CZ33 C0G	Taiwan Semiconductor Corporation	IC REG LINEAR 3.3V 500MA Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 500mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: - Package / Case: - Supplier Device Package: -	paquet: -	Stock4 992
TS2951CS30 RLG	Taiwan Semiconductor Corporation	IC REG LINEAR 3V 150MA Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 150mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: - Package / Case: - Supplier Device Package: -	paquet: -	Stock4 816
TS431ACS RLG	Taiwan Semiconductor Corporation	VOLTAGE REFERENCE, PROGRAMMABLE, Reference Type: - Output Type: - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Current - Output: - Tolerance: - Temperature Coefficient: - Noise - 0.1Hz to 10Hz: - Noise - 10Hz to 10kHz: - Voltage - Input: - Current - Supply: - Current - Cathode: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	paquet: -	Stock4 880
BZY55B22	Taiwan Semiconductor Corporation	0805 (CERAMICS), 500MW, 2%, SMAL Voltage - Zener (Nom) (Vz): 22 V Tolerance: ±2% Power - Max: 500 mW Impedance (Max) (Zzt): 55 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 16 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805	paquet: -	Request a Quote
MBRF10150CTC0	Taiwan Semiconductor Corporation	DIODE ARR SCHOTT 150V ITO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io) (per Diode): 10A Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 150 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB	paquet: -	Request a Quote
1N4148WS-R9G	Taiwan Semiconductor Corporation	SOD-323F, 100V, 0.15A, SWITCHING Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 5 µA @ 75 V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F Operating Temperature - Junction: -65°C ~ 150°C	paquet: -	Stock30 000
TQM070NB04CR-RLG	Taiwan Semiconductor Corporation	MOSFET N-CH 40V 15A/75A 8PDFNU FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3125 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 8-PDFNU (5x6) Package / Case: 8-PowerTDFN	paquet: -	Stock22 500
T15JA05G-K	Taiwan Semiconductor Corporation	15A, 600V, STANDARD BRIDGE RECTI Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	paquet: -	Stock4 500
SK310BH	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 3A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock28 800
MBR15150CTH	Taiwan Semiconductor Corporation	DIODE ARR SCHOT 150V 15A TO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io) (per Diode): 15A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 150 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	paquet: -	Request a Quote
PU1DAH	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 2 µA @ 200 V Capacitance @ Vr, F: 19pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C	paquet: -	Stock32 004
PU3DFS	Taiwan Semiconductor Corporation	25NS, 3A, 200V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 2 µA @ 200 V Capacitance @ Vr, F: 47pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 175°C	paquet: -	Stock84 000
SS110LSH	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A SOD123HE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 100 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock80 454
DBLS206GH	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 800V 2A DBLS Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 800 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: DBLS	paquet: -	Stock9 000
MBRS16100H	Taiwan Semiconductor Corporation	16A, 100V, SCHOTTKY RECTIFIER Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 16 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Request a Quote
TUAU6GH-M3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 6A SMPC4.6U Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 64pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: SMPC4.6U Operating Temperature - Junction: -55°C ~ 175°C	paquet: -	Stock7 803
SS14FSH	Taiwan Semiconductor Corporation	1A, 40V, SCHOTTKY RECTIFIER Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: 69pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Request a Quote
HER154GH	Taiwan Semiconductor Corporation	50NS, 1.5A, 300V, HIGH EFFICIENT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 300 V Capacitance @ Vr, F: 35pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock10 500
TS25P06GH	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 800V 25A TS-6P Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	paquet: -	Stock3 600
ES15DLW-RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1.5A SOD123W Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 24pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Request a Quote