Page 147 - Produits Taiwan Semiconductor Corporation

Référence	Fabricant	Description	paquet	Stock
BZD27C20PWHRVG	Taiwan Semiconductor Corporation	DIODE, ZENER, 20V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 20V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 15V Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD123W	paquet: SOD-123W	Stock6 336
BZD27C18PWHRVG	Taiwan Semiconductor Corporation	DIODE, ZENER, 18V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 18V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 13V Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD123W	paquet: SOD-123W	Stock4 768
BZD27C68P RFG	Taiwan Semiconductor Corporation	DIODE, ZENER, 68V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 68V Tolerance: ±5.88% Power - Max: 1W Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 1µA @ 51V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	paquet: DO-219AB	Stock7 312
BZD27C15P MTG	Taiwan Semiconductor Corporation	DIODE, ZENER, 15V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 14.7V Tolerance: ±6.12% Power - Max: 1W Impedance (Max) (Zzt): 10 Ohms Current - Reverse Leakage @ Vr: 1µA @ 11V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	paquet: DO-219AB	Stock5 760
BZD27C75PHMHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 75V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 74.5V Tolerance: ±6.04% Power - Max: 1W Impedance (Max) (Zzt): 100 Ohms Current - Reverse Leakage @ Vr: 1µA @ 56V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	paquet: DO-219AB	Stock2 448
BZD27C43P MQG	Taiwan Semiconductor Corporation	DIODE, ZENER, 43V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 43V Tolerance: ±6.97% Power - Max: 1W Impedance (Max) (Zzt): 45 Ohms Current - Reverse Leakage @ Vr: 1µA @ 33V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	paquet: DO-219AB	Stock7 696
1SMB5949HM4G	Taiwan Semiconductor Corporation	DIODE, ZENER, 100V, 3000MW, 5%, Voltage - Zener (Nom) (Vz): 100V Tolerance: ±5% Power - Max: 3W Impedance (Max) (Zzt): 250 Ohms Current - Reverse Leakage @ Vr: 1µA @ 76V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB)	paquet: DO-214AA, SMB	Stock2 032
BZT52C5V1 RHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 5.1V, 500MW, 5%, S Voltage - Zener (Nom) (Vz): 5.1V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 60 Ohms Current - Reverse Leakage @ Vr: 1.8µA @ 2V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F	paquet: SOD-123F	Stock2 608
MMSZ5230B RHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 4.7V, 500MW, 5%, S Voltage - Zener (Nom) (Vz): 4.7V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 19 Ohms Current - Reverse Leakage @ Vr: 5µA @ 2V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F	paquet: SOD-123F	Stock7 568
BZT55B3V3 L1G	Taiwan Semiconductor Corporation	DIODE, ZENER, 3.3V, 500MW, 2%, Q Voltage - Zener (Nom) (Vz): 3.3V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 85 Ohms Current - Reverse Leakage @ Vr: 2µA @ 1V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-80 Variant Supplier Device Package: Mini MELF	paquet: SOD-80 Variant	Stock3 248
BZV55C47 L1G	Taiwan Semiconductor Corporation	DIODE, ZENER, 47V, 500MW, 5%, MM Voltage - Zener (Nom) (Vz): 47V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 110 Ohms Current - Reverse Leakage @ Vr: 100nA @ 35V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: Mini MELF	paquet: DO-213AC, MINI-MELF, SOD-80	Stock7 184
GBPC40005 T0G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 40A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A Current - Reverse Leakage @ Vr: 10µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, GBPC40 Supplier Device Package: GBPC40	paquet: 4-Square, GBPC40	Stock7 472
TS8P01G D2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 8A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Current - Reverse Leakage @ Vr: 10µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	paquet: 4-SIP, TS-6P	Stock3 840
EABS1GHREG	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, SUPER FAST, 1A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Current - Reverse Leakage @ Vr: 1µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: ABS	paquet: 4-SMD, Gull Wing	Stock4 880
EABS1DHREG	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, SUPER FAST, 1A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1.5A Current - Reverse Leakage @ Vr: 1µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: ABS	paquet: 4-SMD, Gull Wing	Stock2 208
1M110ZH	Taiwan Semiconductor Corporation	DIODE ZENER 110V 1W DO204AL Voltage - Zener (Nom) (Vz): 110 V Tolerance: ±5% Power - Max: 1 W Impedance (Max) (Zzt): 450 Ohms Current - Reverse Leakage @ Vr: 5 µA @ 83.6 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	paquet: -	Request a Quote
UGS20JH	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 20A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 2 V @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 94.5pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock990
HS1JFL	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SOD123F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 6pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock31 938
S2QH	Taiwan Semiconductor Corporation	2A, 1200V, STANDARD RECOVERY REC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 1 µA @ 1200 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock18 000
SS33-V7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 125°C	paquet: -	Request a Quote
TSSW3U60	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A SOD123W Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Stock84 270
DBL107G	Taiwan Semiconductor Corporation	DIODE BRIDGE 1A 1000V DBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: DBL	paquet: -	Stock14 700
SS36-R7	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	paquet: -	Request a Quote
1PGSMA4747	Taiwan Semiconductor Corporation	DIODE ZENER 20V 1.25W DO214AC Voltage - Zener (Nom) (Vz): 20 V Tolerance: ±5% Power - Max: 1.25 W Impedance (Max) (Zzt): 22 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 15.2 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	paquet: -	Request a Quote
1SMA4742H	Taiwan Semiconductor Corporation	DIODE ZENER 12V 1.25W DO214AC Voltage - Zener (Nom) (Vz): 12 V Tolerance: ±5% Power - Max: 1.25 W Impedance (Max) (Zzt): 9 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	paquet: -	Request a Quote
UG54GSH	Taiwan Semiconductor Corporation	20NS, 5A, 200V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 175°C	paquet: -	Stock10 500
BC849BW	Taiwan Semiconductor Corporation	SOT-323, 30V, 0.1A, NPN BIPOLAR Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 200 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	paquet: -	Request a Quote
MUR310SB	Taiwan Semiconductor Corporation	25NS, 3A, 100V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C	paquet: -	Stock18 000